WO2010008508A1 - Inner cavity system for nano-imprint lithography - Google Patents

Inner cavity system for nano-imprint lithography Download PDF

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Publication number
WO2010008508A1
WO2010008508A1 PCT/US2009/004020 US2009004020W WO2010008508A1 WO 2010008508 A1 WO2010008508 A1 WO 2010008508A1 US 2009004020 W US2009004020 W US 2009004020W WO 2010008508 A1 WO2010008508 A1 WO 2010008508A1
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WIPO (PCT)
Prior art keywords
template
cavity
template system
pressure
port
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Application number
PCT/US2009/004020
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French (fr)
Inventor
Byung-Jin Choi
Kosta Selinidis
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Molecular Imprints, Inc.
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Publication date
Application filed by Molecular Imprints, Inc. filed Critical Molecular Imprints, Inc.
Priority to JP2011518711A priority Critical patent/JP2011528506A/en
Priority to KR1020117000125A priority patent/KR20110046438A/en
Publication of WO2010008508A1 publication Critical patent/WO2010008508A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A nano-imprint lithography template system having a support layer with at least one port, and a patterned surface layer coupled to the support layer. Coupling of the patterned surface layer to the support layer forms a cavity. Pressure within the cavity is controlled through the port of the support layer.

Description

INNER CAVITY SYSTEM FOR NANO-IMPRINT LITHOGRAPHY
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit under 35 U. S. C. § 119(e)(1 ) of
U.S. Provisional No. 61/080,890 filed on July 15, 2008, and U.S. Application No. 12/498,748 filed on July 7, 2009, both of which are hereby incorporated by reference herein.
STATEMENT REGARDING FEDERALLY SPONSORED
RESEARCH OR DEVELOPMENT
[0002] The United States government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided by the terms of SPAWAR N66001-06-C-2003 Nanoimprint Lithography Manufacturing Scale (NIMS) Award and NIST ATP AWARD 70NANB4H3012.
BACKGROUND INFORMATION
[0003] Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important. Nano- fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
[0004] An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Patent No. 6,936,194, all of which are hereby incorporated by reference herein.
[0005] An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer. BRIEF DESCRIPTION OF DRAWINGS
[0006] So that the present invention may be understood in more detail, a description of embodiments of the invention is provided with reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore not to be considered limiting of the scope.
[0007] FIG. 1 illustrates a simplified side view of a lithographic system in accordance with an embodiment of the present invention. [0008] FIG. 2 illustrates a simplified side view of the substrate shown in
FIG. 1 having a patterned layer positioned thereon.
[0009] FIG. 3A illustrates a simplified side view of an embodiment of a template system.
[0010] FIG. 3B illustrates a simplified side view of another embodiment of a template system.
[0011] FIGS. 4A and 4B illustrate top down views of exemplary template systems.
[0012] FIG. 5A illustrates a simplified side view of Portion A and Portion B forming a template system. [0013] FIG. 5B illustrates a simplified side view of Portion C and Portion D forming another template system.
DETAILED DESCRIPTION [0014] Referring to the figures, and particularly to FIG. 1 , illustrated therein is a lithographic system 10 used to form a relief pattern on substrate 12. Substrate 12 may be coupled to substrate chuck 14. As illustrated, substrate chuck 14 is a vacuum chuck. Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference herein. [0015] Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide translation and/or rotational motion with respect to the x, y, and z axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
[0016] Spaced-apart from substrate 12 is template 18. Template 18 may include mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Alternatively, template 18 may be formed without mesa 20.
[0017] Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12. [0018] Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference herein. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
[0019] System 10 may further comprise fluid dispense system 32. Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12. Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. For example, polymerizable material 34 may be positioned upon substrate 12 using techniques such as those described in U.S. Patent Publication No. 2005/0270312 and U.S. Patent Publication No. 2005/0106321 , both of which are hereby incorporated by reference herein. Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations. Polymerizable material 34 may comprise a monomer mixture as described in U.S. Patent No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, both of which are hereby incorporated by reference herein. [0020] Referring to FIGS. 1 and 2, system 10 may further comprise energy source 38 coupled to direct energy 40 along path 42. Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42. System 10 may be regulated by processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.
[0021] Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34. After the desired volume is filled with polymerizable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22, defining patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having a thickness ti and residual layer having a thickness t2.
[0022] The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Patent No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381 , and U.S. Patent Publication No. 2004/0211754, all of which are hereby incorporated by reference herein.
[0023] A standard template 18, as illustrated in FIG. 1 , may be nominally
0.25" in thickness. This magnitude of thickness may provide minimal bending at the surface of template 18 (e.g., surface of mold 20). As the rigid surface comes into contact with polymerizable material 34, pockets of gas may become entrapped. These pockets generally must be displaced prior to solidification of polymerizable material 34, thus, slowing the imprinting process. [0024] A template design for correcting such deficiencies is proposed in related U.S. Patent Publication No. 2008/0160129, which is hereby incorporated by reference herein in its entirety. This template design may improve filling speed by flexing of a thin patterned layer. For example, the design includes a hollow center that may allow for a flexible surface. The hollow center may reduce the stiffness of the design, yet may be susceptible to alignment and overlay issues resulting from out-of-plane bending and/or actuator compression errors. These issues may result in a non-uniform thickness t2 of residual layer 48 (shown in FIG. 2), with such variations in thickness t2 adding to non-correctible distortion and/or compromising overlay capability. [0025] Referring to FIGS. 3A and 3B, a template system 300 having an inner cavity 302 and flexibility may increase filling speed of polymerizable material 34 while still providing stiffness for overlay and/or alignment during imprinting as described above with respect to FIGS. 1 and 2. Such flexibility combined with stiffness with the design of template system 300 may increase throughput and/or improve alignment/overlay in nano-imprint applications. Additionally, such a design may be implemented into form factors including, but not limited to, stand 65 mm square template form factor, 6025 photomask form factor, and/or the like. [0026] Referring to FIG. 3A, template system 300 may generally comprise an inner cavity 302, a support layer 304, and a patterned surface layer 306. Template system 300 may also include one or more cavity ports 303. For example, template system 300 of FIG. 3A includes cavity port 303. Template system 300 of FIG. 3B includes cavity ports 303a-d.
[0027] Patterned surface layer 306 may comprise a thin flexible base 308, a mesa region 310 (corresponding to mesa 20 of FIG. 1 ), and a relief image 312. Flexible base 308 may have a thickness t.3, and may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. For example, flexible base 308 may be formed from fused silica and have a magnitude of thickness t3 of approximately 0.2 mm to 3 mm. [0028] Mesa region 310 may have a thickness U, and may be formed of materials similar to flexible base 308. For example, mesa region 310 may be formed of fused silica having a magnitude of thickness of approximately 5 to 200 μm. Relief image 312 may extend from the surface of mesa region 310 and/or relief image 312, or portions of relief image 312, may be recessed into the surface of mesa region 310. Relief image 312, or portions of relief image 312, may be used to form the corresponding pattern in patterned layer 46, such as illustrated and described with respect to FIG. 2.
[0029] Inner cavity 302 may include a volume between support layer 304 and patterned surface layer 306. The volume may include a distance di between support layer 304 and patterned surface layer 306. For example, distance di may be approximately 0.010 mm to 5 mm depending on design considerations. Additionally, the volume of space forming cavity 302 may include a length L1. For example, length Li may be substantially similar to or larger than the length of patterned mesa region 310, the length of support layer 304, and/or other range depending on design considerations.
[0030] Referring to FIGS. 4A and 4B, inner cavity 302 may have a variety of shapes including, but not limited to, circular, oval, rectangular, square, or any other fanciful shape. For example, FIG. 4A illustrates inner cavity 302a having a circular shape, and FIG. 4B illustrates inner cavity 302b having a square shape. [0031] Referring again to FIGS. 3A and 3B, pressure within inner cavity
302 may be controlled through cavity access port 303. For example, pressure within inner cavity may be controlled through cavity access port 303 by pressure system 314. Pressure system 314 may include, but is not limited to, a pressurized chamber, vacuum pump, or other similar means that may be coupled to port 303 to control pressure within cavity 302.
[0032] Applied pressure in cavity 302 provided by pressure system 314 may be used to flex and/or bow patterned surface 306. For example, pressure applied by pressure system 314 into cavity 302 may be in the ragne of -10OkPa to 100 Kpa. Additionally, pressure within the cavity 302 may be controlled by a precision pressure regulator. Pressure may be increased or decreased depending on use (e.g., flexing and/or bowing) of template system 300. During application of pressure within cavity 302, support layer 304 may provide stiffness within template system 300 through material and/or thickness design. Such stiffness, during application of pressure within cavity 302, may provide control of overlay and/or alignment of template system 300. For example, stiffness of support layer 304 may provide control of overlay and/or alignment of template system 300 during flexing and/or bowing of patterned surface 306 resulting from application of pressure within cavity 302.
[0033] Pressure may be controlled using multiple pressure systems 314a and 314b as illustrated in FIG. 3B. Although two pressure systems 314a and 314b are illustrated, it should be noted that any number of pressure systems 314a may be coupled to one or more ports 303a-d. For example, each port 303a-d may be coupled to a separate pressure system 314. Alternatively, multiple ports 303a-d may be coupled to shared pressure systems 314. The number and coupling of pressure systems 314 to ports 303 may be based on design considerations. For example, as illustrated in FIG. 3B, port 303b may be coupled to pressure system 314b and port 303d may be coupled to pressure system 314a. With use of two pressure systems 314a and 314b, a particle 316 within cavity 302 may be extracted by application of positive pressure and vacuum pressure supplied by pressure systems 314a and 314b. For example, pressure system 314a may apply a positive pressure while pressure system 314b applies vacuum pressure to extract particle 316 from cavity 302.
[0034] FIGS. 5A and 5B illustrate formation of template systems 300a and
300b through coupling of multiple portions 320 to fabricate template system 300a and/or 300b. [0035] Referring to FIG. 5A, Portion A 320a may include support layer 306 and a recess 322a that when coupled to Portion B 320b forms inner cavity 302 (shown in FIG. 3A). Portion B 320b may include patterned surface layer 306a and Portion A 320a may include support layer 304a. Portion A 320a and/or recess 322a may be formed by a variety of methods including, but not limited to, machining, lithographic patterning, etching, and/or the like. Similarly, Portion B 320b may be fabricated by a variety of methods including, but not limited to, machining, lithographic patterning, standard wafer processes, and the like. Coupling of Portion A 320a to Portion B 320b may be through a variety of methods including, but not limited to, anionic bonding, adhesives (e.g., thin adhesives), thermal welding, and the like.
[0036] FIG. 5B illustrates another embodiment of formation of template
300 through coupling of Portion C 320c and Portion D 32Od. In this embodiment, Portion C 320c may include a first portion of support layer 304b. Portion D 32Od may include a second portion of support layer 304c in addition to recess 322b and patterned surface layer 306b. Coupling of Portion C 320c to Portion D 32Od having a recess forms inner cavity 302 (shown in FIG. 3A). In addition, Portion C 320c may be formed of two sub-portions 324a and 324b as illustrated in FIG. 5B. Sub-portions 324a and 324b may be formed separately such that when sub- portions 324a and 324b are coupled, together sub-portions 324a and 324b form port 303. It should be noted, port 303 may be formed through a variety of processes including, but not limited to machining, lithographic patterning, etching, and the like, without coupling of sub-portions 324a and 324b.

Claims

WHAT IS CLAIMED IS:
1. A nano-imprint lithography template system, comprising: a support layer having a first port; a patterned surface layer coupled to the support layer such that a cavity is formed between the support layer and the patterned surface layer, wherein pressure within the cavity is controlled through the first port of the support layer.
2. The template system of claim 1 , wherein the support layer has multiple ports, within each port controlling the pressure within the cavity.
3. The template system of claim 2, wherein the multiple ports distribute pressure within the cavity.
4. The template system of any one of claims 2 and 3, wherein at least one port provides vacuum pressure and at least one port provides positive pressure.
5. The template system of claim 4, wherein the vacuum pressure and the positive pressure control bowing of at least a portion of the patterned surface layer.
6. The template system of any of the above claims, wherein the cavity is rectangular.
7. The template system of any of the above claims, wherein the first port of the support layer provides pressure to the cavity such that patterned surface layer is flexed.
8. The template system of claim 7, wherein the magnitude of thickness of the support layer and materiality of the support layer provides stiffness to the template system to minimizes alignment error.
9. The template system of any of the above claims, wherein the patterned surface layer includes a flexible base, a mesa region and a relief image, the flexible base being coupled to the support layer.
10. The template system of claim 9, wherein the relief image extends from a surface of the mesa region.
11. The template system of any one of claims 9 and 10, wherein a length of cavity is larger than a length of mesa region.
12. The template system of any of the above claims, wherein the patterned surface layer is bonded to the support layer.
13. The template system of claim 12, wherein the patterned surface layer includes a recess forming the cavity.
14. The template system of any of the above claims, wherein the cavity and the first port are formed through hollowing the support layer and the patterned surface layer.
15. A nano-imprint lithography template system, comprising: a first portion having at least one port and at least one recess; a second portion coupled to the first portion such that the recess of the first portion forms a cavity between the first portion and the second portion, wherein pressure within the cavity is controlled by the port of the first portion.
16. The template system of claim 15, wherein the first portion of the template is bonded to the second portion of the template.
17. The template system of any one of claims 15 and 16, wherein the port is formed within the first portion of the template by lithographic patterning.
18. The template system of any one of claims 15-17, wherein pressure within the cavity provides the second portion of the template in a flexed position.
19. The template system of claim 18, wherein the first portion of the template has a magnitude of thickness and a materiality minimizing alignment error due to flexing of the second portion of the template.
20. A nanoimprint lithography template system, comprising: a first portion of the template having a patterned surface layer and a recess; a second portion of the template having a support layer coupled to the patterned surface layer such that the recess of the first portion forms a cavity between the first portion of the template and the second portion of the template, the support layer forming a port; and, a pressure system coupled to the port to control pressure within the cavity.
PCT/US2009/004020 2008-07-15 2009-07-09 Inner cavity system for nano-imprint lithography WO2010008508A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011518711A JP2011528506A (en) 2008-07-15 2009-07-09 Internal cavity system for nano-imprint lithography
KR1020117000125A KR20110046438A (en) 2008-07-15 2009-07-09 Internal Cavity System for Nanoimprint Lithography

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8089008P 2008-07-15 2008-07-15
US61/080,890 2008-07-15
US12/498,748 2009-07-07
US12/498,748 US20100015270A1 (en) 2008-07-15 2009-07-07 Inner cavity system for nano-imprint lithography

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WO2010008508A1 true WO2010008508A1 (en) 2010-01-21

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JP (1) JP2011528506A (en)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022031404A1 (en) * 2020-08-03 2022-02-10 Applied Materials, Inc. Apparatus and method for making seamless soft stamps

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US20100095862A1 (en) * 2008-10-22 2010-04-22 Molecular Imprints, Inc. Double Sidewall Angle Nano-Imprint Template
US8142704B2 (en) * 2008-10-22 2012-03-27 Molecular Imprints, Inc. Imprint lithography system and method
US8877073B2 (en) * 2008-10-27 2014-11-04 Canon Nanotechnologies, Inc. Imprint lithography template
US8529778B2 (en) * 2008-11-13 2013-09-10 Molecular Imprints, Inc. Large area patterning of nano-sized shapes
FR2955522B1 (en) * 2010-01-28 2012-02-24 Commissariat Energie Atomique MOLD FOR UV ASSISTED NANO-PRINTING LITHOGRAPHY AND METHODS OF MAKING SUCH A MOLD
WO2012061816A2 (en) 2010-11-05 2012-05-10 Molecular Imprints, Inc. Patterning of non-convex shaped nanostructures
JP6061524B2 (en) * 2011-08-11 2017-01-18 キヤノン株式会社 Imprint apparatus and article manufacturing method
KR20130123760A (en) 2012-05-03 2013-11-13 삼성전자주식회사 Active template system and the nano-imprint method using the same
JP2014069339A (en) * 2012-09-27 2014-04-21 Hitachi High-Technologies Corp Stamper, stamper production apparatus and production method of the same, and fine structure transfer method
JP6495283B2 (en) * 2013-08-19 2019-04-03 ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム User-defined profile programmable thin film deposition with nanometer scale accuracy
US10409156B2 (en) 2015-02-13 2019-09-10 Canon Kabushiki Kaisha Mold, imprint apparatus, and method of manufacturing article
US11454883B2 (en) * 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060077374A1 (en) * 2002-07-11 2006-04-13 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US20070275114A1 (en) * 2006-04-03 2007-11-29 Molecular Imprints, Inc. Partial Vacuum Environment Imprinting
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2975476A (en) * 1959-03-02 1961-03-21 John E Burke Press
US3130412A (en) * 1959-07-31 1964-04-21 Scott Paper Co Process of and apparatus for treating sheet materials and product
FR2209967B1 (en) * 1972-12-08 1979-03-30 Thomson Csf
US3946367A (en) * 1972-12-20 1976-03-23 Videonics Of Hawaii, Inc. Three dimensional electro-optical retrieval system
FR2339741A1 (en) * 1976-01-30 1977-08-26 Snecma ABRADABLE STATOR GASKET FOR AXIAL TURBOMACHINE AND ITS EXECUTION PROCESS
NL7710555A (en) * 1977-09-28 1979-03-30 Philips Nv METHOD AND DEVICE FOR MANUFACTURING INFORMATION CONTAINING PLATES.
US4601861A (en) * 1982-09-30 1986-07-22 Amerace Corporation Methods and apparatus for embossing a precision optical pattern in a resinous sheet or laminate
JPS613339A (en) * 1984-06-18 1986-01-09 Hitachi Ltd Stamper for reproduction of high-density information recording disk and its production
US4514249A (en) * 1984-07-19 1985-04-30 Brown & Williamson Tobacco Corporation Device for making grooves in cigarette filters
KR960025390A (en) * 1994-12-03 1996-07-20 안시환 Manufacturing method of optical disk stamper
US5708652A (en) * 1995-02-28 1998-01-13 Sony Corporation Multi-layer recording medium and method for producing same
US5804017A (en) * 1995-07-27 1998-09-08 Imation Corp. Method and apparatus for making an optical information record
JP3298607B2 (en) * 1995-09-29 2002-07-02 ソニー株式会社 Liquid crystal element and manufacturing method thereof
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
IT1294942B1 (en) * 1997-08-01 1999-04-23 Sacmi PROCESS OF PRESSING CERAMIC POWDERS AND EQUIPMENT FOR IMPLEMENTING THE SAME.
US20020159918A1 (en) * 2000-06-25 2002-10-31 Fan-Gang Tseng Micro-fabricated stamp array for depositing biologic diagnostic testing samples on bio-bindable surface
EP2264522A3 (en) * 2000-07-16 2011-12-14 The Board of Regents of The University of Texas System Method of forming a pattern on a substrate
WO2002067055A2 (en) * 2000-10-12 2002-08-29 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
JP3580280B2 (en) * 2001-10-25 2004-10-20 株式会社日立製作所 Recording medium and manufacturing method thereof
CA2380114C (en) * 2002-04-04 2010-01-19 Obducat Aktiebolag Imprint method and device
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
TW570290U (en) * 2003-05-02 2004-01-01 Ind Tech Res Inst Uniform pressing device for nanometer transfer-print
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
JP4455093B2 (en) * 2004-02-20 2010-04-21 キヤノン株式会社 Mold, processing apparatus using mold, and processing method using mold
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
US20050230882A1 (en) * 2004-04-19 2005-10-20 Molecular Imprints, Inc. Method of forming a deep-featured template employed in imprint lithography
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
WO2006060757A2 (en) * 2004-12-01 2006-06-08 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US7798801B2 (en) * 2005-01-31 2010-09-21 Molecular Imprints, Inc. Chucking system for nano-manufacturing
US20060177532A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography method to control extrusion of a liquid from a desired region on a substrate
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US8001924B2 (en) * 2006-03-31 2011-08-23 Asml Netherlands B.V. Imprint lithography
JP4819577B2 (en) * 2006-05-31 2011-11-24 キヤノン株式会社 Pattern transfer method and pattern transfer apparatus
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
SG185929A1 (en) * 2007-11-21 2012-12-28 Molecular Imprints Inc Porous template and imprinting stack for nano-imprint lithography
WO2009085286A1 (en) * 2007-12-28 2009-07-09 Molecular Imprints, Inc. Template pattern density doubling
US9323143B2 (en) * 2008-02-05 2016-04-26 Canon Nanotechnologies, Inc. Controlling template surface composition in nano-imprint lithography
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060077374A1 (en) * 2002-07-11 2006-04-13 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US20070275114A1 (en) * 2006-04-03 2007-11-29 Molecular Imprints, Inc. Partial Vacuum Environment Imprinting
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022031404A1 (en) * 2020-08-03 2022-02-10 Applied Materials, Inc. Apparatus and method for making seamless soft stamps

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