WO2009148912A3 - Methods of providing electrical isolation and semiconductor structures including same - Google Patents
Methods of providing electrical isolation and semiconductor structures including same Download PDFInfo
- Publication number
- WO2009148912A3 WO2009148912A3 PCT/US2009/045417 US2009045417W WO2009148912A3 WO 2009148912 A3 WO2009148912 A3 WO 2009148912A3 US 2009045417 W US2009045417 W US 2009045417W WO 2009148912 A3 WO2009148912 A3 WO 2009148912A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- methods
- semiconductor structures
- electrical isolation
- providing electrical
- structures including
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 238000002955 isolation Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107029629A KR101273007B1 (en) | 2008-06-02 | 2009-05-28 | Methods of providing electrical isolation and semiconductor structures including same |
CN2009801205167A CN102047409A (en) | 2008-06-02 | 2009-05-28 | Methods of providing electrical isolation and semiconductor structures including same |
EP09759073.1A EP2294610A4 (en) | 2008-06-02 | 2009-05-28 | Methods of providing electrical isolation and semiconductor structures including same |
KR1020127024400A KR101316959B1 (en) | 2008-06-02 | 2009-05-28 | Methods of providing electrical isolation and semiconductor structures including same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/131,608 | 2008-06-02 | ||
US12/131,608 US7824983B2 (en) | 2008-06-02 | 2008-06-02 | Methods of providing electrical isolation in semiconductor structures |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009148912A2 WO2009148912A2 (en) | 2009-12-10 |
WO2009148912A3 true WO2009148912A3 (en) | 2010-03-04 |
Family
ID=41378697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/045417 WO2009148912A2 (en) | 2008-06-02 | 2009-05-28 | Methods of providing electrical isolation and semiconductor structures including same |
Country Status (6)
Country | Link |
---|---|
US (4) | US7824983B2 (en) |
EP (2) | EP2294610A4 (en) |
KR (2) | KR101316959B1 (en) |
CN (1) | CN102047409A (en) |
TW (1) | TWI396252B (en) |
WO (1) | WO2009148912A2 (en) |
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KR100881818B1 (en) * | 2006-09-04 | 2009-02-03 | 주식회사 하이닉스반도체 | Method for forming semiconductor device |
US7700427B2 (en) * | 2007-06-13 | 2010-04-20 | Qimonda Ag | Integrated circuit having a Fin structure |
US7824983B2 (en) | 2008-06-02 | 2010-11-02 | Micron Technology, Inc. | Methods of providing electrical isolation in semiconductor structures |
-
2008
- 2008-06-02 US US12/131,608 patent/US7824983B2/en active Active
-
2009
- 2009-05-28 EP EP09759073.1A patent/EP2294610A4/en not_active Withdrawn
- 2009-05-28 CN CN2009801205167A patent/CN102047409A/en active Pending
- 2009-05-28 WO PCT/US2009/045417 patent/WO2009148912A2/en active Application Filing
- 2009-05-28 EP EP16166494.1A patent/EP3082156A1/en not_active Withdrawn
- 2009-05-28 KR KR1020127024400A patent/KR101316959B1/en active IP Right Grant
- 2009-05-28 KR KR1020107029629A patent/KR101273007B1/en active IP Right Grant
- 2009-06-02 TW TW098118236A patent/TWI396252B/en active
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2010
- 2010-02-04 US US12/700,491 patent/US8148775B2/en active Active
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2012
- 2012-03-27 US US13/431,623 patent/US8987834B2/en active Active
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2015
- 2015-03-16 US US14/659,009 patent/US20150187767A1/en not_active Abandoned
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US5972776A (en) * | 1995-12-22 | 1999-10-26 | Stmicroelectronics, Inc. | Method of forming a planar isolation structure in an integrated circuit |
US20060216894A1 (en) * | 2005-03-25 | 2006-09-28 | Parekh Kunal R | Methods of forming recessed access devices associated with semiconductor constructions |
US20070134884A1 (en) * | 2005-12-14 | 2007-06-14 | Samsung Electronics Co., Ltd. | Isolation method of defining active fins, method of fabricating semiconductor device using the same and semiconductor device fabricated thereby |
US20080121970A1 (en) * | 2006-08-31 | 2008-05-29 | Micron Technology, Inc. | Finned memory cells and the fabrication thereof |
Also Published As
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US8987834B2 (en) | 2015-03-24 |
US8148775B2 (en) | 2012-04-03 |
KR101316959B1 (en) | 2013-10-11 |
CN102047409A (en) | 2011-05-04 |
US20120181605A1 (en) | 2012-07-19 |
US20090294840A1 (en) | 2009-12-03 |
EP2294610A4 (en) | 2014-04-30 |
TWI396252B (en) | 2013-05-11 |
US20100133609A1 (en) | 2010-06-03 |
KR101273007B1 (en) | 2013-06-10 |
EP2294610A2 (en) | 2011-03-16 |
US20150187767A1 (en) | 2015-07-02 |
EP3082156A1 (en) | 2016-10-19 |
TW201005875A (en) | 2010-02-01 |
WO2009148912A2 (en) | 2009-12-10 |
US7824983B2 (en) | 2010-11-02 |
KR20110027719A (en) | 2011-03-16 |
KR20120108066A (en) | 2012-10-04 |
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