WO2009137578A3 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making - Google Patents

Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making Download PDF

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Publication number
WO2009137578A3
WO2009137578A3 PCT/US2009/042983 US2009042983W WO2009137578A3 WO 2009137578 A3 WO2009137578 A3 WO 2009137578A3 US 2009042983 W US2009042983 W US 2009042983W WO 2009137578 A3 WO2009137578 A3 WO 2009137578A3
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WO
WIPO (PCT)
Prior art keywords
devices
semiconductor
punch
making
methods
Prior art date
Application number
PCT/US2009/042983
Other languages
French (fr)
Other versions
WO2009137578A2 (en
Inventor
Igor Sankin
David C. Sheridan
Joseph Neil Merrett
Original Assignee
Semisouth Laboratories, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Laboratories, Inc. filed Critical Semisouth Laboratories, Inc.
Priority to JP2011508627A priority Critical patent/JP5593308B2/en
Priority to EP09743564.8A priority patent/EP2289103A4/en
Priority to CN2009801262403A priority patent/CN102084484B/en
Priority to AU2009244273A priority patent/AU2009244273A1/en
Priority to CA2722942A priority patent/CA2722942A1/en
Publication of WO2009137578A2 publication Critical patent/WO2009137578A2/en
Publication of WO2009137578A3 publication Critical patent/WO2009137578A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Abstract

Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides non-punch-through behavior and enhanced current conduction capability. The devices can be power semiconductor devices as such as Junction Field-Effect Transistors (VJFETs), Static Induction Transistors (SITs), Junction Field Effect Thyristors, or JFET current limiters. The devices can be made in wide bandgap semiconductors such as silicon carbide (SiC). According to some embodiments, the device can be a normally-off SiC vertical junction field effect transistor. Methods of making the devices and circuits comprising the devices are also described.
PCT/US2009/042983 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making WO2009137578A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011508627A JP5593308B2 (en) 2008-05-08 2009-05-06 Semiconductor device with non-punch-through semiconductor channel with enhanced conductivity and process
EP09743564.8A EP2289103A4 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
CN2009801262403A CN102084484B (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
AU2009244273A AU2009244273A1 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
CA2722942A CA2722942A1 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Publications (2)

Publication Number Publication Date
WO2009137578A2 WO2009137578A2 (en) 2009-11-12
WO2009137578A3 true WO2009137578A3 (en) 2010-03-04

Family

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Family Applications (1)

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PCT/US2009/042983 WO2009137578A2 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Country Status (9)

Country Link
US (2) US7977713B2 (en)
EP (1) EP2289103A4 (en)
JP (1) JP5593308B2 (en)
KR (1) KR20110018891A (en)
CN (1) CN102084484B (en)
AU (1) AU2009244273A1 (en)
CA (1) CA2722942A1 (en)
TW (1) TWI415258B (en)
WO (1) WO2009137578A2 (en)

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US8445631B2 (en) 2009-10-13 2013-05-21 Kraton Polymers U.S. Llc Metal-neutralized sulfonated block copolymers, process for making them and their use
US8263713B2 (en) 2009-10-13 2012-09-11 Kraton Polymers U.S. Llc Amine neutralized sulfonated block copolymers and method for making same
US8211784B2 (en) * 2009-10-26 2012-07-03 Advanced Ion Beam Technology, Inc. Method for manufacturing a semiconductor device with less leakage current induced by carbon implant
CN102648514A (en) * 2009-12-08 2012-08-22 Ssscip有限公司 Methods of making semiconductor devices having implanted sidewalls and devices made thereby
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US9429366B2 (en) 2010-09-29 2016-08-30 Kraton Polymers U.S. Llc Energy recovery ventilation sulfonated block copolymer laminate membrane
US9394414B2 (en) 2010-09-29 2016-07-19 Kraton Polymers U.S. Llc Elastic, moisture-vapor permeable films, their preparation and their use
BR112013007705A2 (en) 2010-10-18 2016-08-09 Kraton Polymers Us Llc solution having a sulfonated block copolymer composition, film or membrane, aqueous dispersion, composite, sulfonated block copolymer composition, process, method for forming a sulfonated block copolymer composition, and, an electrodialysis cell
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US9861941B2 (en) 2011-07-12 2018-01-09 Kraton Polymers U.S. Llc Modified sulfonated block copolymers and the preparation thereof
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Also Published As

Publication number Publication date
TW200952175A (en) 2009-12-16
TWI415258B (en) 2013-11-11
US20090278177A1 (en) 2009-11-12
US20110217829A1 (en) 2011-09-08
US8507335B2 (en) 2013-08-13
JP5593308B2 (en) 2014-09-17
CA2722942A1 (en) 2009-11-12
EP2289103A2 (en) 2011-03-02
KR20110018891A (en) 2011-02-24
CN102084484A (en) 2011-06-01
EP2289103A4 (en) 2013-07-31
US7977713B2 (en) 2011-07-12
WO2009137578A2 (en) 2009-11-12
AU2009244273A1 (en) 2009-11-12
CN102084484B (en) 2013-06-05
JP2011521446A (en) 2011-07-21

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