WO2009111340A3 - Flash lamp annealing crystallization for large area thin films - Google Patents

Flash lamp annealing crystallization for large area thin films Download PDF

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Publication number
WO2009111340A3
WO2009111340A3 PCT/US2009/035566 US2009035566W WO2009111340A3 WO 2009111340 A3 WO2009111340 A3 WO 2009111340A3 US 2009035566 W US2009035566 W US 2009035566W WO 2009111340 A3 WO2009111340 A3 WO 2009111340A3
Authority
WO
WIPO (PCT)
Prior art keywords
flash lamp
lamp annealing
large area
area thin
thin films
Prior art date
Application number
PCT/US2009/035566
Other languages
French (fr)
Other versions
WO2009111340A2 (en
Inventor
James S. Im
Original Assignee
The Trustees Of Columbia University In The City Of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Trustees Of Columbia University In The City Of New York filed Critical The Trustees Of Columbia University In The City Of New York
Priority to US12/919,681 priority Critical patent/US8569155B2/en
Publication of WO2009111340A2 publication Critical patent/WO2009111340A2/en
Publication of WO2009111340A3 publication Critical patent/WO2009111340A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

The disclosed subject matter generally relates a method of irradiating a large area thin film with a pulsed light source. In some embodiments, the disclosed subject matter particularly relates to utilizing flash lamp annealing in combination with patterning techniques for making thin film devices. The flash lamp annealing can trigger lateral growth crystallization or explosive crystallization in large area thin films. In some embodiments, capping layers or proximity masks can be used in conjunction with the flash lamp annealing.
PCT/US2009/035566 2008-02-29 2009-02-27 Flash lamp annealing crystallization for large area thin films WO2009111340A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/919,681 US8569155B2 (en) 2008-02-29 2009-02-27 Flash lamp annealing crystallization for large area thin films

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US3278408P 2008-02-29 2008-02-29
US3273708P 2008-02-29 2008-02-29
US61/032,784 2008-02-29
US61/032,737 2008-02-29

Publications (2)

Publication Number Publication Date
WO2009111340A2 WO2009111340A2 (en) 2009-09-11
WO2009111340A3 true WO2009111340A3 (en) 2010-01-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/035566 WO2009111340A2 (en) 2008-02-29 2009-02-27 Flash lamp annealing crystallization for large area thin films

Country Status (3)

Country Link
US (1) US8569155B2 (en)
TW (1) TWI462181B (en)
WO (1) WO2009111340A2 (en)

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DE102011007544A1 (en) * 2011-04-15 2012-10-18 Von Ardenne Anlagentechnik Gmbh Method and device for thermal treatment of substrates
DE102013100520B4 (en) 2012-12-28 2017-06-01 Von Ardenne Gmbh Flash lamp assembly and method for igniting same
DE102013206486B4 (en) 2013-04-11 2014-11-06 Von Ardenne Gmbh Flash lamp assembly and method for igniting same
WO2015127036A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Methods and systems for controlled lateral solidification
DE102014105300A1 (en) * 2014-03-12 2015-09-17 Von Ardenne Gmbh Processing arrangement and method for operating a processing arrangement
FR3025936B1 (en) * 2014-09-11 2016-12-02 Saint Gobain METHOD FOR RECLAIMING FLASH LAMPS
CN106898540B (en) * 2015-12-17 2020-01-31 宸鸿光电科技股份有限公司 Semiconductor manufacturing method
US10526242B2 (en) * 2016-07-11 2020-01-07 Guardian Glass, LLC Coated article supporting titanium-based coating, and method of making the same
GB2566477A (en) * 2017-09-14 2019-03-20 Nat Univ Ireland Galway Method of processing a target material
CN111092124A (en) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 Semiconductor device and method for manufacturing the same
CN111092017A (en) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 Method for manufacturing thin film element

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