WO2009053832A3 - Bottom antireflective coating compositions - Google Patents

Bottom antireflective coating compositions Download PDF

Info

Publication number
WO2009053832A3
WO2009053832A3 PCT/IB2008/002847 IB2008002847W WO2009053832A3 WO 2009053832 A3 WO2009053832 A3 WO 2009053832A3 IB 2008002847 W IB2008002847 W IB 2008002847W WO 2009053832 A3 WO2009053832 A3 WO 2009053832A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
coating compositions
antireflective coating
bottom antireflective
positive
Prior art date
Application number
PCT/IB2008/002847
Other languages
French (fr)
Other versions
WO2009053832A2 (en
Inventor
Francis M. Houlihan
Shinji Miyazaki
Mark O. Neisser
Alberto D. Dioses
Joseph E. Oberlander
Original Assignee
Az Electronic Materials Usa Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa Corp. filed Critical Az Electronic Materials Usa Corp.
Priority to EP08843074A priority Critical patent/EP2212273A2/en
Priority to JP2010530582A priority patent/JP5499386B2/en
Priority to CN200880113002A priority patent/CN101835735A/en
Publication of WO2009053832A2 publication Critical patent/WO2009053832A2/en
Publication of WO2009053832A3 publication Critical patent/WO2009053832A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/01—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
    • C07C211/02—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C211/03—Monoamines
    • C07C211/05—Mono-, di- or tri-ethylamine
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C55/00—Saturated compounds having more than one carboxyl group bound to acyclic carbon atoms
    • C07C55/02—Dicarboxylic acids
    • C07C55/08—Malonic acid
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Abstract

Multilayer systemcomprising at least a first layer containing a photoacid generator substantially in soluble in a solvent of a second layer and in an optional third layer present in the system. Positive and negative developable bottom antiref lective coating compositions and coated substrate comprising a substrate, a layer of said antiref lective coating composition and a positive or negative photoresist composition. A process for forming an image. A compound of formula (I) HA+ (I).
PCT/IB2008/002847 2007-10-23 2008-10-21 Bottom antireflective coating compositions WO2009053832A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08843074A EP2212273A2 (en) 2007-10-23 2008-10-21 Bottom antireflective coating compositions
JP2010530582A JP5499386B2 (en) 2007-10-23 2008-10-21 Coating composition for bottom antireflection film
CN200880113002A CN101835735A (en) 2007-10-23 2008-10-21 Bottom antireflective coating composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/876,793 US8088548B2 (en) 2007-10-23 2007-10-23 Bottom antireflective coating compositions
US11/876,793 2007-10-23

Publications (2)

Publication Number Publication Date
WO2009053832A2 WO2009053832A2 (en) 2009-04-30
WO2009053832A3 true WO2009053832A3 (en) 2009-11-26

Family

ID=40474943

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/002847 WO2009053832A2 (en) 2007-10-23 2008-10-21 Bottom antireflective coating compositions

Country Status (8)

Country Link
US (1) US8088548B2 (en)
EP (1) EP2212273A2 (en)
JP (1) JP5499386B2 (en)
KR (1) KR101537833B1 (en)
CN (1) CN101835735A (en)
MY (1) MY148382A (en)
TW (1) TWI464537B (en)
WO (1) WO2009053832A2 (en)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US9763668B2 (en) 2004-10-08 2017-09-19 Covidien Lp Endoscopic surgical clip applier
EP2774552B1 (en) 2004-10-08 2019-01-02 Covidien LP Endoscopic surgical clip applier
CA2809110A1 (en) 2004-10-08 2006-04-20 Tyco Healthcare Group Lp Apparatus for applying surgical clips
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
EP1913881B1 (en) 2006-10-17 2014-06-11 Covidien LP Apparatus for applying surgical clips
EP3189796B1 (en) 2007-03-26 2019-09-25 Covidien LP Endoscopic surgical clip applier
JP5329526B2 (en) 2007-04-11 2013-10-30 コヴィディエン リミテッド パートナーシップ Surgical clip applier
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
KR101585992B1 (en) * 2007-12-20 2016-01-19 삼성전자주식회사 Polymer for an anti-reflective coating composition for an anti-reflective coating and method of forming a pattern in a semiconductor device using the composition
US8465502B2 (en) 2008-08-25 2013-06-18 Covidien Lp Surgical clip applier and method of assembly
US8409223B2 (en) 2008-08-29 2013-04-02 Covidien Lp Endoscopic surgical clip applier with clip retention
US9358015B2 (en) 2008-08-29 2016-06-07 Covidien Lp Endoscopic surgical clip applier with wedge plate
US8267944B2 (en) 2008-08-29 2012-09-18 Tyco Healthcare Group Lp Endoscopic surgical clip applier with lock out
JP4813537B2 (en) * 2008-11-07 2011-11-09 信越化学工業株式会社 Resist underlayer material containing thermal acid generator, resist underlayer film forming substrate, and pattern forming method
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
KR101668505B1 (en) * 2009-02-19 2016-10-28 브레우어 사이언스 인코포레이션 Acid-sensitive, developer-soluble bottom anti-reflective coatings
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) * 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating
JP5504824B2 (en) * 2009-10-28 2014-05-28 Ｊｓｒ株式会社 Positive radiation-sensitive resin composition, interlayer insulating film and method for forming the same
US8545486B2 (en) 2009-12-15 2013-10-01 Covidien Lp Surgical clip applier
JP5691585B2 (en) * 2010-02-16 2015-04-01 住友化学株式会社 Resist composition
US8403945B2 (en) 2010-02-25 2013-03-26 Covidien Lp Articulating endoscopic surgical clip applier
US8403946B2 (en) 2010-07-28 2013-03-26 Covidien Lp Articulating clip applier cartridge
US8968337B2 (en) 2010-07-28 2015-03-03 Covidien Lp Articulating clip applier
JP5737526B2 (en) * 2010-08-02 2015-06-17 日産化学工業株式会社 Resist underlayer film forming composition and resist pattern forming method using the same
JP5688146B2 (en) * 2010-08-25 2015-03-25 ダウ グローバル テクノロジーズ エルエルシー Copolymer
JP6035017B2 (en) * 2010-10-04 2016-11-30 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Lower layer composition and method for imaging lower layer
JP5820676B2 (en) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Lower layer composition and method for imaging lower layer
US20120122029A1 (en) 2010-11-11 2012-05-17 Takanori Kudo Underlayer Developable Coating Compositions and Processes Thereof
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
JP5981196B2 (en) * 2011-04-07 2016-08-31 住友化学株式会社 Resist composition and method for producing resist pattern
US9775623B2 (en) 2011-04-29 2017-10-03 Covidien Lp Surgical clip applier including clip relief feature
EP2527377A1 (en) * 2011-05-27 2012-11-28 Rohm and Haas Electronic Materials LLC Surface active additive and photoresist composition comprising same
US8623589B2 (en) * 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
CN105061454B (en) * 2011-06-14 2019-09-27 三菱化学株式会社 The manufacturing method of the manufacturing method of alcoholic compound, (methyl) acrylate
CN102890402B (en) * 2011-07-19 2014-07-16 中芯国际集成电路制造(上海)有限公司 Method for removing defects of photosensitive developable bottom anti-reflective coatings (PS-DBARC)
US8715907B2 (en) 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
JP5621755B2 (en) * 2011-11-17 2014-11-12 信越化学工業株式会社 Chemically amplified positive resist material and pattern forming method
US8697336B2 (en) 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
US9364239B2 (en) 2011-12-19 2016-06-14 Covidien Lp Jaw closure mechanism for a surgical clip applier
US9408610B2 (en) 2012-05-04 2016-08-09 Covidien Lp Surgical clip applier with dissector
JP6246494B2 (en) * 2012-05-18 2017-12-13 住友化学株式会社 Resist composition and method for producing resist pattern
US9532787B2 (en) 2012-05-31 2017-01-03 Covidien Lp Endoscopic clip applier
US8999624B2 (en) * 2012-06-29 2015-04-07 International Business Machines Corporation Developable bottom antireflective coating composition and pattern forming method using thereof
US8900797B2 (en) 2012-09-26 2014-12-02 Az Electronic Materials (Luxembourg) S.A.R.L. Developable bottom anti-reflective coating
US9750500B2 (en) 2013-01-18 2017-09-05 Covidien Lp Surgical clip applier
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US9775624B2 (en) 2013-08-27 2017-10-03 Covidien Lp Surgical clip applier
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
KR102142648B1 (en) * 2013-12-16 2020-08-10 삼성디스플레이 주식회사 Photo-sensitive resin composition, method for manufacturing organic layer using the composition, and display device comprising the organic layer
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
WO2015127459A1 (en) 2014-02-24 2015-08-27 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
KR102402422B1 (en) * 2014-02-25 2022-05-25 도쿄엘렉트론가부시키가이샤 Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9572753B2 (en) * 2014-03-17 2017-02-21 Ada Foundation Enzymatically and hydrolytically stable resins, resin monomers, and resin composites for use in dental preventive and restorative applications
US9362120B2 (en) 2014-03-31 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process and composition with de-crosslinkable crosslink material
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US9810990B2 (en) * 2015-03-16 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical treatment for lithography improvement in a negative tone development process
CN104914672B (en) * 2015-06-11 2020-08-21 中国科学院化学研究所 Bottom anti-reflection composition based on molecular glass containing polyhydroxy structure and application thereof
US10007177B2 (en) 2015-08-21 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method to define multiple layer patterns using double exposures
CN105334697B (en) * 2015-12-08 2019-10-11 深圳市华星光电技术有限公司 The production method of photoetching compositions and colored filter
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI662360B (en) 2016-05-13 2019-06-11 東京威力科創股份有限公司 Critical dimension control by use of a photo agent
JP6909374B2 (en) 2016-05-13 2021-07-28 東京エレクトロン株式会社 Limit dimensional control using photosensitizing chemistry or photosensitive chemically amplified resist
JP6789024B2 (en) * 2016-07-22 2020-11-25 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
KR102482878B1 (en) 2017-09-26 2022-12-29 삼성전자 주식회사 method of manufacturing integrated circuit device
JP7200267B2 (en) * 2019-01-28 2023-01-06 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
US11345772B2 (en) 2019-09-06 2022-05-31 Canon Kabushiki Kaisha Curable composition
TWI777426B (en) * 2020-02-27 2022-09-11 台灣積體電路製造股份有限公司 Photoresist underlayer composition and method of manufacturing a semiconductor device
US20210271164A1 (en) * 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device
US20220137509A1 (en) * 2020-10-31 2022-05-05 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods
JP2022125971A (en) * 2021-02-17 2022-08-29 信越化学工業株式会社 Negative resist material and pattern forming process
JP2022125970A (en) * 2021-02-17 2022-08-29 信越化学工業株式会社 Positive resist material and pattern forming process
JPWO2023008354A1 (en) * 2021-07-30 2023-02-02
CN113913075B (en) * 2021-10-25 2022-09-20 嘉庚创新实验室 Anti-reflective coating composition and crosslinkable polymer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523795A (en) * 1964-12-25 1970-08-11 Fuji Photo Film Co Ltd Heat developable photographic copying materials
US4061465A (en) * 1976-04-02 1977-12-06 The United States Of America As Represented By The Secretary Of Agriculture Creasable durable press textiles from methylol reagents and half amides or half salts of dicarboxylic acids
JPS5647440A (en) * 1979-09-28 1981-04-30 Japan Synthetic Rubber Co Ltd Rubber composition having high elastic modulus
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
EP1262831A2 (en) * 2001-05-11 2002-12-04 Shipley Co. L.L.C. Antireflective coating compositions
US20030129531A1 (en) * 2002-01-09 2003-07-10 Oberlander Joseph E. Positive-working photoimageable bottom antireflective coating
WO2005093513A2 (en) * 2004-03-25 2005-10-06 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20050287816A1 (en) * 2004-06-28 2005-12-29 Blalock Guy T Methods of forming patterned photoresist layers over semiconductor substrates

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL169879C (en) * 1971-01-08 1982-09-01 Polak Frutal Works METHOD FOR PREPARING TASTING OR TASTE-IMPROVING SULFUR COMPOUNDS, METHOD FOR PREPARING AN AROMACOMPOSITION AND METHOD FOR AROMATIZING A FOOD
US4229274A (en) 1979-02-26 1980-10-21 Ppg Industries, Inc. Ultraviolet light curable compositions for producing coatings of low gloss
US4197174A (en) * 1979-03-14 1980-04-08 American Can Company Method for producing bis-[4-(diphenylsulfonio) phenyl] sulfide bis-MX6
US4388450A (en) 1981-03-13 1983-06-14 General Electric Company Aromatic polyvinyl ethers and heat curable molding compositions obtained therefrom
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4863827A (en) 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
US4845265A (en) 1988-02-29 1989-07-04 Allied-Signal Inc. Polyfunctional vinyl ether terminated ester oligomers
DE3817012A1 (en) 1988-05-19 1989-11-30 Basf Ag POSITIVE AND NEGATIVE WORKING RADIATION-SENSITIVE MIXTURES AND METHOD FOR THE PRODUCTION OF RELIEF PATTERNS
DE3930087A1 (en) 1989-09-09 1991-03-14 Hoechst Ag POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREOF
DE3930086A1 (en) 1989-09-09 1991-03-21 Hoechst Ag POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREOF
US5650261A (en) 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
US5114826A (en) 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JPH03267941A (en) * 1990-03-19 1991-11-28 Sanyo Chem Ind Ltd Electricaly conductive resist material
KR100189642B1 (en) * 1991-02-18 1999-06-01 디어터 크리스트 Method of coating or sealing of electronic components or component groups
JPH04269756A (en) * 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> Resist film suitable for lift-off working
DE4112967A1 (en) 1991-04-20 1992-10-22 Hoechst Ag SUBSTITUTED 1-SULFONYLOXY-2-PYRIDONE, METHOD FOR THE PRODUCTION AND USE THEREOF
DE4125260A1 (en) 1991-07-31 1993-02-04 Hoechst Ag OLIGOMER COMPOUNDS WITH SAEURELABLE PROTECTION GROUPS AND THE POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE THEREFORE
JP3000745B2 (en) 1991-09-19 2000-01-17 富士通株式会社 Resist composition and method of forming resist pattern
JP2694097B2 (en) 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション Antireflection coating composition
US5362608A (en) 1992-08-24 1994-11-08 Brewer Science, Inc. Microlithographic substrate cleaning and compositions therefor
DE4302681A1 (en) 1993-02-01 1994-08-04 Hoechst Ag Sulfonic acid esters, radiation-sensitive mixtures produced therewith and their use
JPH06230574A (en) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd Positive type photosensitive composition
DE4446511A1 (en) * 1994-12-24 1996-06-27 Sel Alcatel Ag Synchronous digital message transmission system with hierarchical synchronization network
US5635333A (en) 1994-12-28 1997-06-03 Shipley Company, L.L.C. Antireflective coating process
US5731386A (en) 1995-05-09 1998-03-24 Shipley Company, L.L.C. Polymer for positive acid catalyzed resists
JPH0954437A (en) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd Chemical amplification type positive resist composition
TW477913B (en) 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
KR100536824B1 (en) 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
JP3587325B2 (en) 1996-03-08 2004-11-10 富士写真フイルム株式会社 Positive photosensitive composition
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3198915B2 (en) 1996-04-02 2001-08-13 信越化学工業株式会社 Chemically amplified positive resist material
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652297A (en) 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
US5997993A (en) 1996-11-20 1999-12-07 Polaroid Corporation Protective overcoat useful for enhancing an article resistance to ambient humidity
KR100265597B1 (en) 1996-12-30 2000-09-15 김영환 Arf photosensitive resin and manufacturing method thereof
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
TW432257B (en) 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
US6103445A (en) 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
US5981145A (en) 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
JPH1172925A (en) * 1997-07-03 1999-03-16 Toshiba Corp Undercoat layer composition and pattern forming method using the same
US6054254A (en) 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
TW468091B (en) 1997-09-05 2001-12-11 Kansai Paint Co Ltd Visible light-sensitive compositions and pattern formation process
DE19742013A1 (en) 1997-09-24 1999-03-25 Basf Ag Open-cell rigid foams based on isocyanate
JP3676918B2 (en) 1997-10-09 2005-07-27 富士通株式会社 Resist material and resist pattern forming method
US5882996A (en) 1997-10-14 1999-03-16 Industrial Technology Research Institute Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer
US5935760A (en) 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
KR100279497B1 (en) 1998-07-16 2001-02-01 박찬구 Process for preparing sulfonium salt
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6630285B2 (en) 1998-10-15 2003-10-07 Mitsui Chemicals, Inc. Positive sensitive resin composition and a process for forming a resist pattern therewith
US6114085A (en) 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
KR100320773B1 (en) 1999-05-31 2002-01-17 윤종용 photoresist compositions
US6455230B1 (en) 1999-06-04 2002-09-24 Agfa-Gevaert Method for preparing a lithographic printing plate by ablation of a heat sensitive ablatable imaging element
US6110653A (en) 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
US6187506B1 (en) 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6338934B1 (en) 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
JP3948646B2 (en) 2000-08-31 2007-07-25 東京応化工業株式会社 Positive resist composition and resist pattern forming method using the same
US7192931B2 (en) * 2000-10-12 2007-03-20 Neuren Pharmaceuticals Ltd. Treatment of demyelinating diseases
EP1262832A1 (en) 2001-05-31 2002-12-04 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20030093513A1 (en) * 2001-09-11 2003-05-15 Hicks Jeffrey Todd Methods, systems and computer program products for packetized voice network evaluation
KR100465866B1 (en) 2001-10-26 2005-01-13 주식회사 하이닉스반도체 Organic anti-reflective coating material and preparation thereof
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US6846612B2 (en) 2002-02-01 2005-01-25 Brewer Science Inc. Organic anti-reflective coating compositions for advanced microlithography
KR20030068729A (en) 2002-02-16 2003-08-25 삼성전자주식회사 Compositions for forming anti-reflective light absorbing layer and method for formimg patterns of semiconductor device using the same
US7265431B2 (en) 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
KR20040009384A (en) 2002-07-23 2004-01-31 삼성전자주식회사 Photoresist developer soluble organic bottom anti-reflective composition and photolithography and etching process using the same
CN100371826C (en) 2002-08-26 2008-02-27 住友化学工业株式会社 Sulfonate and photoresist composition
US7358408B2 (en) 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
US7223518B2 (en) 2003-06-06 2007-05-29 Georgia Tech Research Corporation Compositions and methods of use thereof
US7186486B2 (en) 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
TWI366067B (en) * 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP4474246B2 (en) * 2003-09-19 2010-06-02 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
DE102004014292A1 (en) 2004-03-22 2005-10-20 Lurgi Ag Co-production of methanol and ammonia from natural gas
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
KR101168249B1 (en) * 2004-05-14 2012-07-30 닛산 가가쿠 고교 가부시키 가이샤 Antireflective film-forming composition containing vinyl ether compound
US20050271974A1 (en) 2004-06-08 2005-12-08 Rahman M D Photoactive compounds
JP4491283B2 (en) 2004-06-10 2010-06-30 信越化学工業株式会社 Pattern formation method using antireflection film-forming composition
CN101040221B (en) * 2004-10-14 2010-06-16 日产化学工业株式会社 Composition for forming bottom anti-reflective coating containing aromatic sulfonic acid ester compound and light photoacid-generating agent
US7816071B2 (en) 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
US7521170B2 (en) 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7678528B2 (en) 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
KR100703007B1 (en) 2005-11-17 2007-04-06 삼성전자주식회사 Composition for forming an organic anti-reflective coating layer of photo sensitivity and method of forming a pattern using the same
JP5100115B2 (en) 2006-03-16 2012-12-19 東洋合成工業株式会社 Sulfonium salt and acid generator
JP4548616B2 (en) * 2006-05-15 2010-09-22 信越化学工業株式会社 Thermal acid generator, resist underlayer film material containing the same, and pattern formation method using this resist underlayer film material
US7816069B2 (en) 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US20090098490A1 (en) 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
US8455176B2 (en) 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523795A (en) * 1964-12-25 1970-08-11 Fuji Photo Film Co Ltd Heat developable photographic copying materials
US4061465A (en) * 1976-04-02 1977-12-06 The United States Of America As Represented By The Secretary Of Agriculture Creasable durable press textiles from methylol reagents and half amides or half salts of dicarboxylic acids
JPS5647440A (en) * 1979-09-28 1981-04-30 Japan Synthetic Rubber Co Ltd Rubber composition having high elastic modulus
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
EP1262831A2 (en) * 2001-05-11 2002-12-04 Shipley Co. L.L.C. Antireflective coating compositions
US20030129531A1 (en) * 2002-01-09 2003-07-10 Oberlander Joseph E. Positive-working photoimageable bottom antireflective coating
WO2005093513A2 (en) * 2004-03-25 2005-10-06 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20050287816A1 (en) * 2004-06-28 2005-12-29 Blalock Guy T Methods of forming patterned photoresist layers over semiconductor substrates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 198125, Derwent World Patents Index; AN 1981-44838D, XP002546976 *

Also Published As

Publication number Publication date
CN101835735A (en) 2010-09-15
JP2011502276A (en) 2011-01-20
WO2009053832A2 (en) 2009-04-30
EP2212273A2 (en) 2010-08-04
JP5499386B2 (en) 2014-05-21
US8088548B2 (en) 2012-01-03
US20090104559A1 (en) 2009-04-23
KR20100090270A (en) 2010-08-13
TWI464537B (en) 2014-12-11
MY148382A (en) 2013-04-15
KR101537833B1 (en) 2015-07-20
TW200928590A (en) 2009-07-01

Similar Documents

Publication Publication Date Title
WO2009053832A3 (en) Bottom antireflective coating compositions
WO2011022221A3 (en) Near-infrared absorbing film compositions
TW200801788A (en) Resist underlayer coating forming composition for mask blank, mask blank and mask
EP1845416A3 (en) Coating compositions for photolithography
TW200626685A (en) Antireflective compositions for photoresists
WO2012048108A3 (en) Radiation patternable cvd film
WO2008070060A3 (en) Device manufacturing process utilizing a double pattering process
WO2010064135A3 (en) A photosensitive composition
TW200942998A (en) Resist processing method
WO2008056437A8 (en) Copolymer for immersion lithography and compositions
WO2011031396A3 (en) Near-infrared absorbing film compositions
DE602006002256D1 (en) METHOD FOR APPLYING A COATING TO A SURFACE OF A LINSENSUBSTRATS
TW200628524A (en) Process for forming a patterned fluoropolymer film on a substrate
WO2007121456A3 (en) Wet developable bottom antireflective coating composition and method for use thereof
EP1705519A3 (en) Coating compositions for use with an overcoated photoresist
GB2467278A (en) Methods for making tapecast barrier coatings, components comprising the same and tapes made according to the same
EP2637063A3 (en) Pattern forming method
WO2008117693A1 (en) Positive-working radiation-sensitive composition and method for resist pattern formation using the composition
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
WO2007130417A3 (en) Barrier coatings for films and structures
WO2008017954A3 (en) Antireflective composition for photoresists
ATE496977T1 (en) TOPCOAT COMPOSITION, ALKALINE DEVELOPER SOLUBLE TOPCOAT FILM COMPRISING THE COMPOSITION AND PATTERN FORMING METHOD USING THERETO
WO2008064055A3 (en) Printing, depositing, or coating on flowable substrates
WO2007106885A3 (en) Photographic printing paper and method of making same
WO2009038126A1 (en) Resist underlayer film forming composition containing branched polyhydroxystyrene

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880113002.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08843074

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010530582

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008843074

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107011146

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: PI 2010001800

Country of ref document: MY