WO2009042967A1 - Column structure thin film material for solar cell devices - Google Patents

Column structure thin film material for solar cell devices Download PDF

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Publication number
WO2009042967A1
WO2009042967A1 PCT/US2008/078019 US2008078019W WO2009042967A1 WO 2009042967 A1 WO2009042967 A1 WO 2009042967A1 US 2008078019 W US2008078019 W US 2008078019W WO 2009042967 A1 WO2009042967 A1 WO 2009042967A1
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Prior art keywords
solar cell
cell device
thin film
thickness
device structure
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PCT/US2008/078019
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French (fr)
Inventor
Howard W.H. Lee
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Stion Corporation
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Application filed by Stion Corporation filed Critical Stion Corporation
Priority to CN2008800016233A priority Critical patent/CN101578708B/en
Publication of WO2009042967A1 publication Critical patent/WO2009042967A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates generally to photovoltaic materials. More particularly, the present invention provides a method and structure for manufacture of photov oltaic materials using a thin film process including metal oxide bearing materials such as copper 0 oxide and the like. Merely by way of example, the present method and structure have been implemented using a nanostructure configuration, but it would be recognized that the other configurations such as bulk materials may be used.
  • hydroelectric power is derived from electric generators driven b> the force of water that has been held back by large dams such as the Hoover Dam in Nevada, line electric power generated is used to power up a large portion of Los Angeles. California.
  • Other types of clean energy include solar energy. Specific details of solar energy can be found throughout the present background and more particularly below.
  • Solar energy generally converts electromagnetic radiation from our sun to other useful forms of energy. These other forms of energy include thermal energy and electrical power. For electrical power applications, solar cells are often used. Although solar energy is clean and has been successful to a point, there are still many limitations before it becomes w idely used throughout the world.
  • one type of solar cell uses crystalline materials, which form from semiconductor material ingots. These crystalline materials include photo-diode devices that convert electromagnetic radiation into electrical current. Crystalline materials are often costly and difficult to make on a w ide scale. Additionally, devices made from such crystalline materials have low energy conversion efficiencies. Other types of solar cells use "thin film” technology to f orm a thin film of photosensitive material to be used to convert electromagnetic radiation into electrical current. Similar limitations exist with the use of thin film technology in making solar cells. That is, efficiencies are often poor. Additionally, film reliability is often poor and cannot be used for extensive periods of time in conventional environmental applications. These and other limitations of these conventional technologies can be found throughout the present specification and more particularly below.
  • embodiments according to the present invention provide a method and a structure for a thin Him semiconductor material using a metal oxide bearing species. But it would be recognize that embodiments according to the present invention have a much broader range of applicability.
  • a thin film material structure for solar cell devices includes a thickness of material.
  • the thickness of material includes a plurality of single crystal structures.
  • each of the single crystal structure is configured in a column liked shape.
  • Each of the column liked shape has a first end and a second end. and a lateral region connecting the first end and the second end.
  • the first end and the second end has a dimension ranging from about 0.01 micron to about 10 microns, but can be others.
  • ⁇ n optical absorption coefficient of greater than 104 cm- 1 for light in a wavelength range comprising about 400 cm- 1 to about 700 cm- 1 characterizes the thickness of material.
  • a method for forming thin film material structure for solar cell dev ices includes providing a substrate having a surface region. 1 he method forms a first electrode structure overlying the surface region. In a specific embodiment, the method includes forming a thickness of material overly ing the first electrode structure.
  • the thickness of material includes a plurality of single crystal structures. Hach of the single crystal structure is configured in a column like shape in a preferred embodiment. The column like shape has a first end and a second end each having a dimension of ranging from about 0.01 micron to about 10 microns but can be others.
  • the thickness of material is characterized by an optical absorption of greater than 104 cm- 1 for light in a wavelength range comprising about 400 cm- 1 to about 700 cm- 1 .
  • the present invention provides an easy to use process that relies upon conventional technology that can be nanotechnology based. Such nanotechnology based materials and process lead to higher conversion efficiencies and improved processing according to a specific embodiment.
  • the method may provide higher efficiencies in converting sunlight into electrical pow er. Depending upon the embodiment, the efficiency can be about 10 percent or 20 percent or greater for the resulting solar cell according to the present invention.
  • the method provides a process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes.
  • the present method and structure can also be provided using large scale manufacturing techniques, w hich reduce costs associated w ith the manufacture of the photovoltaic devices.
  • the present method and structure can also be provided using solution based processing.
  • the present method uses processes and provides material that are safe to the environment. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits w ill be described in more throughout the present specification and more particularly below.
  • Figure 1 is a simplified diagram illustrating a solar cell device according to embodiments of the present invention.
  • FIG. 2-3 are simplified diagrams illustrating a structure for a thin film metal oxide semiconductor material for the solar cell device according to an embodiments of the present invention.
  • Figure 4-9 are simplified diagrams illustrating a method for fabricating the solar cell device using the thin film metal oxide semiconductor material according to an embodiment of the present invention.
  • embodiments according to the present invention provide a method and structures for thin film metal oxide semiconductor material for solar cell application. But it would be recognized that embodiments according to the present invention have a much broader range of applicability .
  • FIG. 1 is a simplified diagram illustrating a solar cell device structure using a thin metal oxide semiconductor film structure for solar cell application according to an embodiment of the present invention.
  • the diagram is merely an illustration and should not unduly limit the claims herein.
  • a substrate 101 is prov ided, [ he substrate includes a surface region 103 and a thickness 105.
  • the substrate can be a semiconductor such as silicon, silicon germanium, germanium, a combination of these, and the like.
  • the substrate can also be a metal or metal alloy such as nickel, stainless steel, aluminum, and the like.
  • the substrate can be a transparent material such as glass, quartz, or a polymeric material.
  • the substrate may also be a multilay er structured material or a graded material. Of course there can be other variations, modifications, and alternatives.
  • a first electrode structure 107 is provided overly ing the surface region of the substrate.
  • the first electrode structure can be made of a suitable material or a combination of materials.
  • the first electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment, hxamples of the optically transparent material can include indium tin oxide (ITO), aluminum doped zinc oxide, fluorine doped tin oxide and others.
  • the first electrode may be made from a metal material.
  • the metal material can include gold, silver, nickel, platinum, aluminum, tungsten, moly bdenum, a combination of these, or an alloy , among others.
  • the metal material may be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others.
  • the first electrode structure may be made of a carbon based material such as carbon or graphite.
  • the first electrode structure may be made of a conductive polymer material, depending on the application. Of course there can be other variations, modifications, and alternatives.
  • a thin film metal oxide semiconductor material 109 is allowed to form overlvirm the first electrode structure. As shown, the thin film metal oxide semiconductor material is substantially in physical and electrical contact with the first electrode structure, further details of the thin film metal oxide semiconductor material arc provided throughout the present specification and particularly below .
  • the thin film metal oxide semiconductor material comprises a plurality of single crystal structures 200 according to a specific embodiment.
  • Each of the plurality of single crystal structure can have a certain spatial configuration.
  • each of the plurality of single crystal structure is configured in a column like shape. As shown, the column like shape includes a first end 202 and a second end 204. A lateral region 206 connects the first end and the second end. The first end and the second end are irregularly shaped and substantially circular.
  • each of the single crystal structures are prov ided in a closely packed configuration, ⁇ hat is, each of the plurality of the single crj stal structures are arranged substantial! ⁇ parallel l ⁇ each other in a lateral direction 208. as shown in Figure 2.
  • ⁇ top view 300 of the thin Him metal oxide semiconductor material is show n in Figure 3.
  • each ofthe plurality of single crystal structures can have a spatial characteristic, that is each of the single crystal structures can be nano based in a specific embodiment.
  • each of the single crystal structures is characterized b ⁇ a diameter ranging from about 0.01 micron to about 10 microns but can be others.
  • b ⁇ a diameter ranging from about 0.01 micron to about 10 microns but can be others.
  • the thin film metal oxide semiconductor material can be oxides of copper, for example, cupric oxide or cuprous oxide.
  • the thin film metal oxide semiconductor material can be made of oxides of iron such as ferrous oxide FeO. ferric oxide Fe2O3, and the like.
  • ferrous oxide FeO ferrous oxide
  • ferric oxide Fe2O3 ferric oxide
  • copper oxide as the thin film metal oxide semiconductor material as an example, copper oxide ma ⁇ be deposited using a suitable techniques or a combination of techniques.
  • the suitable technique can include sputtering, electrochemical deposition, electropheritic reaction, a combination, and others.
  • the copper oxide can be deposited b ⁇ an electrochemical deposition method using copper sulfate, or copper chloride, and the like, as a precursor.
  • copper sulfate or copper chloride, and the like
  • the thin film metal oxide semiconductor material is characteri/cd by a first band gap.
  • the first band gap can range from about 1.0 eV to about 2.0 eV and preferably range from about 1 .2 eV to about 1 .8 eV.
  • the first band gap can range from about 1.0 eV to about 2.0 eV and preferably range from about 1 .2 eV to about 1 .8 eV.
  • the column like shape of each of the plurality of single cr ⁇ stal structures provides for a grain boundary region for each of the single cry stal structures.
  • Such grain boundary region allows for a diode dev ice structure w ithin each of the plurality of single cry stal structures for the thin film oxide semiconductor material according to a specific embodiment.
  • the thin film metal oxide semiconductor material is characterized bv an optical absorption coefficient. The optical absorption coefficient is at least 104 cm- 1 for light in a wavelength range comprising about 400 nm to about 800 nm.
  • the thin film metal oxide semiconductor material can have an optical absorption coefficient of at least 104 cm- 1 for light in a wavelength range comprising about 450 cm- 1 to about 750 cm- 1 .
  • the thin film metal oxide semiconductor material can have an optical absorption coefficient of at least 104 cm- 1 for light in a wavelength range comprising about 450 cm- 1 to about 750 cm- 1 .
  • the thin film metal oxide semiconductor material can have an optical absorption coefficient of at least 104 cm
  • the solar cell device structure includes a semiconductor material 1 13 ovcrlv ing the thin film metal oxide semiconductor material
  • the semiconductor material has an impuritv characteristic opposite to that of the thin film metal oxide semiconductor material.
  • the thin film metal oxide semiconductor material can have a p tvpe impuritv characteristics
  • the semiconductor material can have a n t> pe impuritv characteristics.
  • the thin film metal oxide semiconductor material can hav e a p- tvpe impuritv characteristics
  • the semiconductor material has a n+ tvpe impuritv characteristics. Additional! ⁇
  • the semiconductor material is characterized bv a second ba ⁇ dgap.
  • the second bandgap is greater than the first bandgap.
  • a high resistivity buffer laver 1 1 1 is prov ided ov erlv ing the semiconductor material.
  • a second electrode structure I 13 is prov ided overlv ing a surface region of the buffer laver.
  • the second electrode structure can be made of a suitable material or a combination of materials.
  • Hie second electrode structure can be made from a transparent conductive electrode or materials that aic light reflecting or light blocking depending on the embodiment. Examples of the ⁇ pticallv transparent material can include indium tin oxide (ITO), aluminum doped zinc oxide, fluorine doped tin oxide and others.
  • the second electrode mav be made from a metal material.
  • the metal material can include gold, silv er, nickel, platinum, aluminum, tungsten, moh bdenum, a combination of these, or an allov , among others.
  • the metal material mav be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others.
  • the second electrode structure mav be made of a carbon based material such as carbon or graphite Yet alternativelv .
  • the second electrode structure mav be made of a conductive polv mer material. depending on the application. Of course there can be other variations, modifications, and Var es.
  • FIGS. 4-9 are simplified diagrams illustrating a method of fabricating a solar cell device using a thin film metal o ⁇ ide semiconductor material according to an embodiment of the present inv ention.
  • I hese diagrams are merel ⁇ examples and should not undulv limit the claims herein.
  • a substrate member 402 including a surface region 404 is pi ⁇ v ided.
  • I he substrate member can be made of an insulator material, a conductor material, or a semiconductor material, depending on the application.
  • the conductor material can be nickel. molvbdenum, aluminum, or a metal allo> such as stainless steel and the likes.
  • the semiconductor material mav include silicon, germanium, silicon germanium, compound semiconductor material such as IH-V materials, H-V I materials, and others.
  • the insulator material can be a transparent material such as glass, quartz, fused silica.
  • the insulator material can be a polvmer material, a ceramic material, or a laver or a composite material depending on the application.
  • the polvmer material mav include acrv lic material , polv carbonate material, and others, depending on the embodiment.
  • the method includes forming a first conductor structure 502 overl ing the surface region of the substrate member.
  • the first electrode structure can be made of a suitable material or a combination ol materials.
  • I he list electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment.
  • Fxamples of the opticallv transparent conductive material can include indium tin oxide (I I O), aluminum doped /inc oxide, fluorine doped tin oxide and others
  • I he transparent conductive material mav be deposited using techniques such as sputtering, or chemical vapor deposition.
  • the first electrode mav be made from a metal material.
  • I he metal material can include gold, silver, nickel, platinum, aluminum, tungsten, molv bdenum, a combination of these, or an allo> . among others.
  • the metal material mav be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others.
  • the first electrode structure mav be made of a carbon based material such as carbon or graphite.
  • the first electrode structure mav be made of a conductiv e polv mer material, depending on the application.
  • the metal material mav be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others.
  • the first electrode structure mav be made of a carbon based material such as carbon or graphite.
  • the first electrode structure mav be made of a conductiv e polv mer material, depending on the application.
  • the method includes forming a thin film metal o ⁇ idc semiconductor material 602 overly ing the first electrode structure.
  • the thin film metal o ⁇ ide semiconductor material has a P- t ⁇ pe impurity characteristics in a specific embodiment.
  • the thin film metal oxide semiconductor material is characterized by an optical absorption coefficient greater than about 104 cm-1 in the wavelength ranging from about 400 run to about 750 mil in a specific embodiment.
  • the thin film metal oxide semiconductor material has a bandgap ranging from about 1 .0 eV to about 2,0 cV.
  • the thin film metal oxide semiconductor material can be oxides of copper (that is cupric o.xide or cuprous oxide, or a combination) deposited by an electrochemical method or by chemical vapor deposition technique.
  • oxides of copper that is cupric o.xide or cuprous oxide, or a combination
  • the method includes forming a semiconductor material 702 hav ing a N+ impurity characteristics 602 overly ing the absorber layer as shown in f igure 7.
  • the semiconductor material can comprise a second metal oxide semiconductor material in a specific embodiment
  • the NT layer can comprise a metal sulfide material.
  • Lxamples of the semiconductor material can include one or more oxides of copper, zinc oxide, and the like.
  • Hxamples of metal sulfide material can include zinc sulfide, iron sulfides and others.
  • the semiconductor material ma ⁇ be provided in various spatial morphologies of different shapes and sizes.
  • the semiconductor material may comprise of suitable materials that are nanostructured.
  • the method for fabricating a solar cell dev ice using thin metal oxide semiconductor material includes providing a buffer lav er 801 overly ing a surface region of the semiconductor material.
  • the buffer lav er comprises of a suitable high resistiv ity material.
  • the buffer lav er comprises of a suitable high resistiv ity material.
  • the method includes forming a second conductor lav er to form a second electrode structure 902 overlying the buffer layer.
  • the second electrode structure can be made of a suitable material or a combination of materials.
  • the second electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment.
  • F.xamples of the optically transparent conductive material can include indium tin oxide (IT O), aluminum doped /inc oxide, fluorine doped tin oxide and others.
  • the transparent 5 conductive material may be deposited using techniques such as sputtering, or chemical vapor deposition.
  • the first electrode may be made from a metal material.
  • I he metal material can include gold, silver, nickel, platinum, aluminum, tungsten, molybdenum, a combination of these, or an alloy, among others.
  • the metal material may be deposited using techniques such as sputtering, electroplating, I O electrochemical deposition and others.
  • the second electrode structure mav be made of a carbon based material such as carbon or graphite.
  • the second electrode structure ma ⁇ be made of a conductive polymer material, depending on the application. Of course there can be other variations, modifications, and alternatives.

Abstract

A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 m icron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 104 Cm-1 for light in a wavelength range comprising about 400 cm-1 to about 700 cm-1 characterizes the thickness of material.

Description

Column Structure Thin Film Material For Solar Cell Devices
CROSS-RITCRHNCES TO RIiLATBD APPLICATIONS 5 [ 0001 ] I'll is application claims priority to U. S Provisional Patent Application No.
60/976,392; Hied on September 28, 2007; and U.S. Nonprovisional Patent Application No. 12/237.371 , filed on September 24. 2008. both applications commonly assigned, and of which is hereby incorporated by reference for all purposes.
STATEMENT AS TO RIGHTS TO IN VHNTIONS MADE 1..NDHR I O FHDERAI. LY SPONSORED RESEARCH OR DEVELOPM F N I
[ 0002 | NO F APPLICABLE
RhF HRI-NCE TO A "SEQUENCE LIS TING," A TABLE. OR A COMPUTER
PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACI DISK. 15 [0003] NO F APPLICABLE
BACKGROUND OF THE INVENTION
[0004] The present invention relates generally to photovoltaic materials. More particularly, the present invention provides a method and structure for manufacture of photov oltaic materials using a thin film process including metal oxide bearing materials such as copper 0 oxide and the like. Merely by way of example, the present method and structure have been implemented using a nanostructure configuration, but it would be recognized that the other configurations such as bulk materials may be used.
[0005] From the beginning of time, human beings have been challenged to find way of harnessing energy. Energy comes in the forms such as petrochemical, hydroelectric, nuclear, 5 w ind, biomass, solar, and more primitive forms such as wood and coal. Over the past century, modern civilization has relied upon petrochemical energy as an important source of energy. Petrochemical energy includes gas and oil. Gas includes lighter forms such as butane and propane, commonly used to heat homes and serve as fuel for cooking. Gas also includes gasoline, diesel, and jet fuel, commonly used for transportation purposes. 1 Icavier0 forms of petrochemicals can also be used to heat homes in some places. Unfortunately, petrochemical energy is limited and essentially fixed based upon the amount available on the planet Earth. Additionally, as more human beings begin to drive and use petrochemicals, it is becoming a rather scarce resource, which will eventually run out over time.
[0006] More recently, clean sources of energy have been desired. An example of a clean source of energy is hydroelectric power. Hydroelectric power is derived from electric generators driven b> the force of water that has been held back by large dams such as the Hoover Dam in Nevada, line electric power generated is used to power up a large portion of Los Angeles. California. Other types of clean energy include solar energy. Specific details of solar energy can be found throughout the present background and more particularly below. [0007J Solar energy generally converts electromagnetic radiation from our sun to other useful forms of energy. These other forms of energy include thermal energy and electrical power. For electrical power applications, solar cells are often used. Although solar energy is clean and has been successful to a point, there are still many limitations before it becomes w idely used throughout the world. As an example, one type of solar cell uses crystalline materials, which form from semiconductor material ingots. These crystalline materials include photo-diode devices that convert electromagnetic radiation into electrical current. Crystalline materials are often costly and difficult to make on a w ide scale. Additionally, devices made from such crystalline materials have low energy conversion efficiencies. Other types of solar cells use "thin film" technology to f orm a thin film of photosensitive material to be used to convert electromagnetic radiation into electrical current. Similar limitations exist with the use of thin film technology in making solar cells. That is, efficiencies are often poor. Additionally, film reliability is often poor and cannot be used for extensive periods of time in conventional environmental applications. These and other limitations of these conventional technologies can be found throughout the present specification and more particularly below.
[0008] From the above, it is seen that improved techniques for manufacturing photovoltaic materials and resulting devices are desired.
BRIEF SUMMARY OF THE INVEN I ION
10009] According to embodiments of the present invention, techniques directed to fabrication of photovoltaic cell is provided. More particularly, embodiments according to the present invention provide a method and a structure for a thin Him semiconductor material using a metal oxide bearing species. But it would be recognize that embodiments according to the present invention have a much broader range of applicability.
[ 0010] In a specific embodiment, a thin film material structure for solar cell devices is provided. The thin Him material structure includes a thickness of material. The thickness of material includes a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column liked shape. Each of the column liked shape has a first end and a second end. and a lateral region connecting the first end and the second end. In a speci fic embodiment, the first end and the second end has a dimension ranging from about 0.01 micron to about 10 microns, but can be others. Λn optical absorption coefficient of greater than 104 cm- 1 for light in a wavelength range comprising about 400 cm- 1 to about 700 cm- 1 characterizes the thickness of material.
[001 I j In a specific embodiment, a method for forming thin film material structure for solar cell dev ices is provided. The method includes providing a substrate having a surface region. 1 he method forms a first electrode structure overlying the surface region. In a specific embodiment, the method includes forming a thickness of material overly ing the first electrode structure. The thickness of material includes a plurality of single crystal structures. Hach of the single crystal structure is configured in a column like shape in a preferred embodiment. The column like shape has a first end and a second end each having a dimension of ranging from about 0.01 micron to about 10 microns but can be others. The thickness of material is characterized by an optical absorption of greater than 104 cm- 1 for light in a wavelength range comprising about 400 cm- 1 to about 700 cm- 1 .
[0012] Depending upon the embodiment, the present invention provides an easy to use process that relies upon conventional technology that can be nanotechnology based. Such nanotechnology based materials and process lead to higher conversion efficiencies and improved processing according to a specific embodiment. In some embodiments, the method may provide higher efficiencies in converting sunlight into electrical pow er. Depending upon the embodiment, the efficiency can be about 10 percent or 20 percent or greater for the resulting solar cell according to the present invention. Additionally, the method provides a process that is compatible with conventional process technology without substantial modifications to conventional equipment and processes. In a specific embodiment, the present method and structure can also be provided using large scale manufacturing techniques, w hich reduce costs associated w ith the manufacture of the photovoltaic devices. In another specific embodiment, the present method and structure can also be provided using solution based processing. In a specific embodiment, the present method uses processes and provides material that are safe to the environment. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits w ill be described in more throughout the present specification and more particularly below.
[0013] Various additional objects, features and advantages of the present invention can be more full) appreciated w ith reference to the detailed description and accompanying drawings that follow .
BRIEF DESCRIPTION OF THE DRAWINGS |0014 ] Figure 1 is a simplified diagram illustrating a solar cell device according to embodiments of the present invention.
[ 00151 Figure 2-3 are simplified diagrams illustrating a structure for a thin film metal oxide semiconductor material for the solar cell device according to an embodiments of the present invention. [0016] Figure 4-9 are simplified diagrams illustrating a method for fabricating the solar cell device using the thin film metal oxide semiconductor material according to an embodiment of the present invention.
DETAILED DESCRIP TION OF THE INVENTION
[0017] According to embodiments of the present invention, techniques for forming a thin film metal oxide semiconductor material are provided. More particularly, embodiments according to the present invention provide a method and structures for thin film metal oxide semiconductor material for solar cell application. But it would be recognized that embodiments according to the present invention have a much broader range of applicability .
[0018J Figure 1 is a simplified diagram illustrating a solar cell device structure using a thin metal oxide semiconductor film structure for solar cell application according to an embodiment of the present invention. The diagram is merely an illustration and should not unduly limit the claims herein. One skilled in the art would recognize other modifications, variations, and alternatives. As shown in Figure 1 . a substrate 101 is prov ided, [ he substrate includes a surface region 103 and a thickness 105. The substrate can be a semiconductor such as silicon, silicon germanium, germanium, a combination of these, and the like. The substrate can also be a metal or metal alloy such as nickel, stainless steel, aluminum, and the like. Alternatively, the substrate can be a transparent material such as glass, quartz, or a polymeric material. The substrate may also be a multilay er structured material or a graded material. Of course there can be other variations, modifications, and alternatives.
[0019] Λs shown in Figure 1 , a first electrode structure 107 is provided overly ing the surface region of the substrate. In a specific embodiment, the first electrode structure can be made of a suitable material or a combination of materials. The first electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment, hxamples of the optically transparent material can include indium tin oxide (ITO), aluminum doped zinc oxide, fluorine doped tin oxide and others. In a specific embodiment, the first electrode may be made from a metal material. The metal material can include gold, silver, nickel, platinum, aluminum, tungsten, moly bdenum, a combination of these, or an alloy , among others. In a specific embodiment, the metal material may be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others. Alternatively, the first electrode structure may be made of a carbon based material such as carbon or graphite. Yet alternatively , the first electrode structure may be made of a conductive polymer material, depending on the application. Of course there can be other variations, modifications, and alternatives.
[0020] In a specific embodiment, a thin film metal oxide semiconductor material 109 is allowed to form overlvirm the first electrode structure. As shown, the thin film metal oxide semiconductor material is substantially in physical and electrical contact with the first electrode structure, further details of the thin film metal oxide semiconductor material arc provided throughout the present specification and particularly below .
[0021 ] Referring to Figure 2, the thin film metal oxide semiconductor material comprises a plurality of single crystal structures 200 according to a specific embodiment. Each of the plurality of single crystal structure can have a certain spatial configuration. In a specific embodiment, each of the plurality of single crystal structure is configured in a column like shape. As shown, the column like shape includes a first end 202 and a second end 204. A lateral region 206 connects the first end and the second end. The first end and the second end are irregularly shaped and substantially circular. In a specific embodiment, each of the single crystal structures are prov ided in a closely packed configuration, ϊ hat is, each of the plurality of the single crj stal structures are arranged substantial!} parallel lυ each other in a lateral direction 208. as shown in Figure 2. Λ top view 300 of the thin Him metal oxide semiconductor material is show n in Figure 3. Of course there can be other variations. modif ications, and alternatives.
10022] In a specific embodiment, each ofthe plurality of single crystal structures can have a spatial characteristic, that is each of the single crystal structures can be nano based in a specific embodiment. In a specific embodiment, each of the single crystal structures is characterized b\ a diameter ranging from about 0.01 micron to about 10 microns but can be others. Of course there can be other variations, modifications, and alternatives.
[0023] In a specific embodiment, the thin film metal oxide semiconductor material can be oxides of copper, for example, cupric oxide or cuprous oxide. In an alternative embodiment, the thin film metal oxide semiconductor material can be made of oxides of iron such as ferrous oxide FeO. ferric oxide Fe2O3, and the like. Of course there can be other variations, modifications, and alternatives.
[0024] I aking copper oxide as the thin film metal oxide semiconductor material as an example, copper oxide ma\ be deposited using a suitable techniques or a combination of techniques. The suitable technique can include sputtering, electrochemical deposition, electropheritic reaction, a combination, and others. In a specific embodiment, the copper oxide can be deposited b\ an electrochemical deposition method using copper sulfate, or copper chloride, and the like, as a precursor. Of course there can be other variations, modifications, and alternatives.
[0025] In a speci fic embodiment, the thin film metal oxide semiconductor material is characteri/cd by a first band gap. The first band gap can range from about 1.0 eV to about 2.0 eV and preferably range from about 1 .2 eV to about 1 .8 eV. Of course there can be other variations, modifications, and alternativ es.
100261 In a specific embodiment, the column like shape of each of the plurality of single cr\ stal structures provides for a grain boundary region for each of the single cry stal structures. Such grain boundary region allows for a diode dev ice structure w ithin each of the plurality of single cry stal structures for the thin film oxide semiconductor material according to a specific embodiment. Of course there can be other variations, modifications, and alternatives. [0027] In a specific embodiment, the thin film metal oxide semiconductor material is characterized bv an optical absorption coefficient. The optical absorption coefficient is at least 104 cm- 1 for light in a wavelength range comprising about 400 nm to about 800 nm. In an alternative embodiment, the thin film metal oxide semiconductor material can have an optical absorption coefficient of at least 104 cm- 1 for light in a wavelength range comprising about 450 cm- 1 to about 750 cm- 1 . Of course there can be other variations, modifications, and alternatives
[0028] Referring back to Figure 1. the solar cell device structure includes a semiconductor material 1 13 ovcrlv ing the thin film metal oxide semiconductor material In a specific embodiment, the semiconductor material has an impuritv characteristic opposite to that of the thin film metal oxide semiconductor material. As merelv an example, the thin film metal oxide semiconductor material can have a p tvpe impuritv characteristics, the semiconductor material can have a n t> pe impuritv characteristics. In a specific embodiment, the thin film metal oxide semiconductor material can hav e a p- tvpe impuritv characteristics, the semiconductor material has a n+ tvpe impuritv characteristics. Additional!}, the semiconductor material is characterized bv a second baπdgap. In a specific embodiment, the second bandgap is greater than the first bandgap. Of course one skilled in the art would recognize other variations, modifications, and alternatives.
[00291 Again referring to Figure I , a high resistivity buffer laver 1 1 1 is prov ided ov erlv ing the semiconductor material. As shown in f igure 1 , a second electrode structure I 13 is prov ided overlv ing a surface region of the buffer laver. In a specific embodiment, the second electrode structure can be made of a suitable material or a combination of materials. Hie second electrode structure can be made from a transparent conductive electrode or materials that aic light reflecting or light blocking depending on the embodiment. Examples of the υpticallv transparent material can include indium tin oxide (ITO), aluminum doped zinc oxide, fluorine doped tin oxide and others. In a specific embodiment, the second electrode mav be made from a metal material. The metal material can include gold, silv er, nickel, platinum, aluminum, tungsten, moh bdenum, a combination of these, or an allov , among others. In a specific embodiment, the metal material mav be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others. Alternative!} , the second electrode structure mav be made of a carbon based material such as carbon or graphite Yet alternativelv . the second electrode structure mav be made of a conductive polv mer material. depending on the application. Of course there can be other variations, modifications, and alternativ es.
[0030J Figure 4-9 are simplified diagrams illustrating a method of fabricating a solar cell device using a thin film metal o\ide semiconductor material according to an embodiment of the present inv ention. I hese diagrams are merel} examples and should not undulv limit the claims herein. One skilled in the art w ould recognize other variations, modifications, and alternatives. As show n in Figure 4. a substrate member 402 including a surface region 404 is pi υv ided. I he substrate member can be made of an insulator material, a conductor material, or a semiconductor material, depending on the application. In a specific embodiment, the conductor material can be nickel. molvbdenum, aluminum, or a metal allo> such as stainless steel and the likes. In a embodiment, the semiconductor material mav include silicon, germanium, silicon germanium, compound semiconductor material such as IH-V materials, H-V I materials, and others. In a specific embodiment, the insulator material can be a transparent material such as glass, quartz, fused silica. Alternative!}, the insulator material can be a polvmer material, a ceramic material, or a laver or a composite material depending on the application. The polvmer material mav include acrv lic material , polv carbonate material, and others, depending on the embodiment.
[003 1 1 Referring to Figure 5, the method includes forming a first conductor structure 502 overl ing the surface region of the substrate member. In a specific embodiment, the first electrode structure can be made of a suitable material or a combination ol materials. I he (list electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment. Fxamples of the opticallv transparent conductive material can include indium tin oxide (I I O), aluminum doped /inc oxide, fluorine doped tin oxide and others I he transparent conductive material mav be deposited using techniques such as sputtering, or chemical vapor deposition. In a specific embodiment, the first electrode mav be made from a metal material. I he metal material can include gold, silver, nickel, platinum, aluminum, tungsten, molv bdenum, a combination of these, or an allo> . among others. In a specific embodiment, the metal material mav be deposited using techniques such as sputtering, electroplating, electrochemical deposition and others. Alternativclv, the first electrode structure mav be made of a carbon based material such as carbon or graphite. Yet alternativ elv , the first electrode structure mav be made of a conductiv e polv mer material, depending on the application. Of course there can be other variations, modifications, and alternatives. [0032] Referring to Figure 6, the method includes forming a thin film metal o\idc semiconductor material 602 overly ing the first electrode structure. The thin film metal o\ide semiconductor material has a P- t} pe impurity characteristics in a specific embodiment. Prefcrabl) , the thin film metal oxide semiconductor material is characterized by an optical absorption coefficient greater than about 104 cm-1 in the wavelength ranging from about 400 run to about 750 mil in a specific embodiment. In a specific embodiment, the thin film metal oxide semiconductor material has a bandgap ranging from about 1 .0 eV to about 2,0 cV. As merel} an example, the thin film metal oxide semiconductor material can be oxides of copper (that is cupric o.xide or cuprous oxide, or a combination) deposited by an electrochemical method or by chemical vapor deposition technique. Of course there can be other variations, modifications, and alternatives.
[0033 ] In a specific embodiment, the method includes forming a semiconductor material 702 hav ing a N+ impurity characteristics 602 overly ing the absorber layer as shown in f igure 7. 1 he semiconductor material can comprise a second metal oxide semiconductor material in a specific embodiment Alternatively, the NT layer can comprise a metal sulfide material. Lxamples of the semiconductor material can include one or more oxides of copper, zinc oxide, and the like. Hxamples of metal sulfide material can include zinc sulfide, iron sulfides and others. The semiconductor material ma} be provided in various spatial morphologies of different shapes and sizes. In a specific embodiment, the semiconductor material may comprise of suitable materials that are nanostructured. such as nanocolumn. nanotubes, nanυrυds, nanocrystals. and others. In an alternative embodiment, the semiconductor material may also be prov ided as other morphologies, such as bulk materials depending on the application. Of course there can be other variations, modifications, and alternatives. Of course there can be other modifications, variations, and alternatives. [0034] Referring to f igure 8. the method for fabricating a solar cell dev ice using thin metal oxide semiconductor material includes providing a buffer lav er 801 overly ing a surface region of the semiconductor material. In a specific embodiment, the buffer lav er comprises of a suitable high resistiv ity material. Of course there can be other modifications, v ariations, and alternatives. [0035 ] As shown in Figure 9, the method includes forming a second conductor lav er to form a second electrode structure 902 overlying the buffer layer. In a specific embodiment, the second electrode structure can be made of a suitable material or a combination of materials. The second electrode structure can be made from a transparent conductive electrode or materials that are light reflecting or light blocking depending on the embodiment. F.xamples of the optically transparent conductive material can include indium tin oxide (IT O), aluminum doped /inc oxide, fluorine doped tin oxide and others. The transparent 5 conductive material may be deposited using techniques such as sputtering, or chemical vapor deposition. In a specific embodiment, the first electrode may be made from a metal material. I he metal material can include gold, silver, nickel, platinum, aluminum, tungsten, molybdenum, a combination of these, or an alloy, among others. In a specific embodiment, the metal material may be deposited using techniques such as sputtering, electroplating, I O electrochemical deposition and others. Alternativelv, the second electrode structure mav be made of a carbon based material such as carbon or graphite. Yet alternatively, the second electrode structure ma} be made of a conductive polymer material, depending on the application. Of course there can be other variations, modifications, and alternatives.
[0036] It is also understood that the examples and embodiments described herein arc for 1 5 illustrative purposes only and that various modifications or changes in light thereof w ill be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.

Claims

WHAT IS CLAIMED IS:
1. A thin film material structure for solar cell devices, the thin film material structure comprising: a thickness of material comprises a plurality of single crystal structures, each of the single crystal structure being configured in a column like shape; the column like shape having a dimension ranging from about 0.01 micron to about 10 microns characterizes a first end and a second end, an optical absorption coefficient of greater than 104 cm- 1 for light in a wavelength range comprising about 400 nm to about 750 nm characterizes the thickness of material.
2. The thin film material structure of claim 1 wherein the thickness of material comprises a metal oxide.
3. The thin film material of claim 2 wherein the metal oxide comprises oxides of copper, zinc oxide, iron oxide, and others.
4. The thin film material structure of claim 1 wherein the thickness of material comprises a metal sulfide.
5. The thin film material structure of claim 4 wherein the metal sulfide can be Cu2S, FeS, FeS, or SnS..
6. The thin film material structure of claim 4 wherein the thickness of material has a first band gap ranging from about 0.8 eV to about 1.3 eV.
7. The thin film material structure of claim 1 wherein the first end and the second end are irregularly in shape and substantially circular.
8. The thin film material structure of claim 1 wherein the plurality of single crystal structures are substantially parallel to each other.
9. The thin film material structure of claim 1 wherein the thickness of material is crystalline.
10. The thin film material structure of claim 1 wherein each of the single crystal structures allows for a diode device region.
1 1. The thin film material of claim 1 wherein the column like shape provides for a grain boundary region for each of the plurality of single crystal structures.
12. The thin film material structure of claim 1 wherein the thickness of material is spatially disposed between a first electrode and a second electrode.
13. A solar cell device structure for a solar cell, the solar cell device structure comprises: a substrate member having a surface region; a first electrode structure overlying the surface region of the substrate member; a thickness of material having a P- type impurity characteristics overlying the first electrode structure, the thickness of material comprises a plurality of single crystal structures, each of the single crystal structure being configured in a column like shape; the column like shape having a dimension of about 0.01 micron to about 10 micron characterizes a first end and a second end, an optical absorption coefficient of greater than 104 cm-1 for light in a wavelength range comprising about 400 nm to about 750 nm characterizes the thickness of material; a semiconductor material having a N+ type impurity characteristics overlying the thickness of material; a high resistivity buffer layer overlying the semiconductor material; a second electrode structure overlying the buffer layer.
14. The solar cell device structure of claim 13 wherein the substrate member is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a IH-V gallium arsenide, germanium, silicon germanium, and others.
15. The solar cell device structure of claim 13 wherein the substrate member is a transparent substrate such as glass, fused silica, quartz, and others.
16. The solar cell device structure of claim 13 wherein the substrate member comprises a metal such as nickel, aluminum, stainless steel, and others.
17. The solar cell device structure of claim 13 wherein the substrate member comprises an organic material, for example, polycarbonate, acrylic material, and others..
18. The solar cell device structure of claim 13 wherein the first electrode structure comprises a transparent conductive material such as indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, and others.
19. The solar cell device structure of claim 13 wherein the first electrode comprises a metal material such as gold, silver, platinum, nickel, aluminum, a composite such as metal alloys, and the like.
20. The solar cell device structure of claim 13 wherein the first electrode comprises an organic material, for example, conductive polymer material.
21. The solar cell device structure of claim 13 wherein the first electrode comprises a carbon based material, for example, graphite.
22. The solar cell device structure of claim 13 wherein the second electrode comprises a transparent conductive material such as indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, and others.
23. The solar cell device structure of claim 13 wherein the second electrode comprises a metal material such as gold, silver, platinum, nickel, aluminum, a composite such as metal alloys, and the like.
24. The solar cell device structure of claim 13 wherein the second electrode comprises an organic material, such as a conductive polymer and others.
25. The solar cell device structure of claim 13 wherein the second electrode comprises a carbon based material such as graphite.
26. The solar cell device structure of claim 13 wherein the thickness of material has a first band gap ranging from about 0.8 eV to about 1.3 eV.
27. The solar cell device structure of claim 13 wherein the thickness of material comprises a metal oxide material, for example, copper oxide, and the like.
28. The solar cell device structure of claim 13 wherein the thickness of material comprises a metal sulfide material, for example, iron sulfide, zinc sulfide, and the like.
29. The solar cell device structure of claim 13 wherein the thickness of material has a P- impurity characteristics.
30. The solar cell device structure of claim 13 wherein the semiconductor material has a N+ impurity characteristics.
31. The solar cell device structure of claim 13 wherein the first end and the second end of the column structure are irregular in shape and substantially circular.
32. The solar cell device structure of claim 13 wherein the each of the single crystal structure allows for a diode device region..
33. The solar cell device structure of claim 13 wherein the column like structure provides a grain boundary region for each of the plurality of the single crystal structures.
34. The solar cell device structure of claim 13 wherein the solar cell device has a conversion efficiency ranging from about 10 % to 20 %.
35. A method for forming thin film material structure for solar cell devices, the method comprising: providing a substrate having a surface region; forming a first electrode structure overlying the surface region; forming a thickness of material comprising a plurality of single crystal structures overlying the first electrode structure, each of the single crystal structure being configured in a column like shape, the column like shape having a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end, a optical absorption of greater than 104 cm-1 for light in a wavelength range comprising about 400 cm-1 to about 700 cm-1 characterizes the thickness of material; forming a second electrode structure overlying the thickness of material.
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