WO2009032539A3 - Semiconductor assemblies and methods of manufacturing such assemblies - Google Patents

Semiconductor assemblies and methods of manufacturing such assemblies Download PDF

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Publication number
WO2009032539A3
WO2009032539A3 PCT/US2008/073878 US2008073878W WO2009032539A3 WO 2009032539 A3 WO2009032539 A3 WO 2009032539A3 US 2008073878 W US2008073878 W US 2008073878W WO 2009032539 A3 WO2009032539 A3 WO 2009032539A3
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WIPO (PCT)
Prior art keywords
assemblies
molded portion
manufacturing
methods
semiconductor
Prior art date
Application number
PCT/US2008/073878
Other languages
French (fr)
Other versions
WO2009032539A2 (en
Inventor
Swee Kwang Chua
Suan Jeung Boon
Yong Poo Chia
Original Assignee
Micron Technology Inc
Swee Kwang Chua
Suan Jeung Boon
Yong Poo Chia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Swee Kwang Chua, Suan Jeung Boon, Yong Poo Chia filed Critical Micron Technology Inc
Priority to CN2008801044103A priority Critical patent/CN101785093B/en
Priority to JP2010523046A priority patent/JP5136866B2/en
Priority to EP08798380.5A priority patent/EP2195831B1/en
Priority to KR1020107005114A priority patent/KR101192084B1/en
Publication of WO2009032539A2 publication Critical patent/WO2009032539A2/en
Publication of WO2009032539A3 publication Critical patent/WO2009032539A3/en

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Semiconductor devices and assemblies including interconnects and methods for forming such interconnects are disclosed herein. One embodiment of a method of manufacturing a semiconductor device includes forming a plurality of first side trenches (210) to an intermediate depth in a molded portion of a molded wafer (110) having a plurality of dies (106) arranged in rows and columns. The method also includes removing material from a second side (220) of the molded portion at areas aligned with the first side trenches, wherein removing the material forms openings (224) through the molded portion. The method further includes forming a plurality of electrical contacts at the second side of the molded portion at the openings and electrically connecting the second side contacts to corresponding bond-sites (109) on the dies.
PCT/US2008/073878 2007-08-28 2008-08-21 Semiconductor assemblies and methods of manufacturing such assemblies WO2009032539A2 (en)

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CN2008801044103A CN101785093B (en) 2007-08-28 2008-08-21 Semiconductor assemblies and methods of manufacturing such assemblies
JP2010523046A JP5136866B2 (en) 2007-08-28 2008-08-21 Semiconductor assembly and method of manufacturing the assembly
EP08798380.5A EP2195831B1 (en) 2007-08-28 2008-08-21 A method of manufacturing a semiconductor device and the corresponding intermediate product
KR1020107005114A KR101192084B1 (en) 2007-08-28 2008-08-21 Semiconductor assemblies and methods of manufacturing such assemblies

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SG200706296-1 2007-08-28
SG200706296-1A SG150404A1 (en) 2007-08-28 2007-08-28 Semiconductor assemblies and methods of manufacturing such assemblies

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WO2009032539A3 true WO2009032539A3 (en) 2009-06-04

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EP (1) EP2195831B1 (en)
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CN101785093B (en) 2013-03-13
CN101785093A (en) 2010-07-21
KR20100041874A (en) 2010-04-22
US20090057843A1 (en) 2009-03-05
US8362594B2 (en) 2013-01-29
EP2195831B1 (en) 2021-01-20
JP5136866B2 (en) 2013-02-06
US7915711B2 (en) 2011-03-29
SG150404A1 (en) 2009-03-30
KR101192084B1 (en) 2012-10-17
WO2009032539A2 (en) 2009-03-12
US20100133662A1 (en) 2010-06-03
EP2195831A2 (en) 2010-06-16
TW200917396A (en) 2009-04-16
US20110175206A1 (en) 2011-07-21
JP2010538469A (en) 2010-12-09
TWI387021B (en) 2013-02-21
US7674655B2 (en) 2010-03-09

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