WO2009009380A3 - Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making - Google Patents

Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making Download PDF

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Publication number
WO2009009380A3
WO2009009380A3 PCT/US2008/069043 US2008069043W WO2009009380A3 WO 2009009380 A3 WO2009009380 A3 WO 2009009380A3 US 2008069043 W US2008069043 W US 2008069043W WO 2009009380 A3 WO2009009380 A3 WO 2009009380A3
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WO
WIPO (PCT)
Prior art keywords
wide bandgap
power switches
making
methods
normally
Prior art date
Application number
PCT/US2008/069043
Other languages
French (fr)
Other versions
WO2009009380A2 (en
Inventor
Igor Sankin
Joseph Neil Merrett
Original Assignee
Semisouth Lab Inc
Igor Sankin
Joseph Neil Merrett
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Lab Inc, Igor Sankin, Joseph Neil Merrett filed Critical Semisouth Lab Inc
Priority to EP08781291A priority Critical patent/EP2171757A2/en
Priority to JP2010515256A priority patent/JP2010532920A/en
Priority to CA2729299A priority patent/CA2729299A1/en
Publication of WO2009009380A2 publication Critical patent/WO2009009380A2/en
Publication of WO2009009380A3 publication Critical patent/WO2009009380A3/en

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
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    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Abstract

Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature -tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
PCT/US2008/069043 2007-07-06 2008-07-02 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making WO2009009380A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08781291A EP2171757A2 (en) 2007-07-06 2008-07-02 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making
JP2010515256A JP2010532920A (en) 2007-07-06 2008-07-02 Always-off integrated JFET power switch in wide band gap semiconductor and fabrication method
CA2729299A CA2729299A1 (en) 2007-07-06 2008-07-02 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/822,568 US7820511B2 (en) 2004-07-08 2007-07-06 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US11/822,568 2007-07-06

Publications (2)

Publication Number Publication Date
WO2009009380A2 WO2009009380A2 (en) 2009-01-15
WO2009009380A3 true WO2009009380A3 (en) 2009-03-05

Family

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PCT/US2008/069043 WO2009009380A2 (en) 2007-07-06 2008-07-02 Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making

Country Status (7)

Country Link
US (3) US7820511B2 (en)
EP (1) EP2171757A2 (en)
JP (1) JP2010532920A (en)
KR (1) KR20100054787A (en)
CA (1) CA2729299A1 (en)
TW (1) TWI371800B (en)
WO (1) WO2009009380A2 (en)

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