WO2009008982A3 - Single phase proximity head having a controlled meniscus for treating a substrate - Google Patents

Single phase proximity head having a controlled meniscus for treating a substrate Download PDF

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Publication number
WO2009008982A3
WO2009008982A3 PCT/US2008/008199 US2008008199W WO2009008982A3 WO 2009008982 A3 WO2009008982 A3 WO 2009008982A3 US 2008008199 W US2008008199 W US 2008008199W WO 2009008982 A3 WO2009008982 A3 WO 2009008982A3
Authority
WO
WIPO (PCT)
Prior art keywords
meniscus
liquid
substrate
proximity head
treating
Prior art date
Application number
PCT/US2008/008199
Other languages
French (fr)
Other versions
WO2009008982A2 (en
Inventor
Michael Ravkin
Alex Kabansky
John M Delarios
Original Assignee
Lam Res Corp
Michael Ravkin
Alex Kabansky
John M Delarios
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Michael Ravkin, Alex Kabansky, John M Delarios filed Critical Lam Res Corp
Priority to KR20107001766A priority Critical patent/KR101493738B1/en
Publication of WO2009008982A2 publication Critical patent/WO2009008982A2/en
Publication of WO2009008982A3 publication Critical patent/WO2009008982A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Abstract

A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus. The liquid supply is in fluid communication with the dispensing nozzles, and is configured to balance an amount of the liquid delivered to the meniscus with an amount of liquid removed from the meniscus, the amount of liquid removed from the meniscus including at least the thin layer of the liquid remaining on the surface of the substrate.
PCT/US2008/008199 2007-07-06 2008-06-30 Single phase proximity head having a controlled meniscus for treating a substrate WO2009008982A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR20107001766A KR101493738B1 (en) 2007-07-06 2008-06-30 Single phase proximity head having a controlled meniscus for treating a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/774,542 US7997288B2 (en) 2002-09-30 2007-07-06 Single phase proximity head having a controlled meniscus for treating a substrate
US11/774,542 2007-07-06

Publications (2)

Publication Number Publication Date
WO2009008982A2 WO2009008982A2 (en) 2009-01-15
WO2009008982A3 true WO2009008982A3 (en) 2009-04-09

Family

ID=40229332

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/008199 WO2009008982A2 (en) 2007-07-06 2008-06-30 Single phase proximity head having a controlled meniscus for treating a substrate

Country Status (4)

Country Link
US (2) US7997288B2 (en)
KR (1) KR101493738B1 (en)
TW (1) TWI417950B (en)
WO (1) WO2009008982A2 (en)

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US8695639B2 (en) * 2009-05-07 2014-04-15 International Business Machines Corporation Multilayer microfluidic probe head and method of fabrication thereof
US8997684B2 (en) * 2011-04-18 2015-04-07 Lam Research Corporation Prevention of particle adders when contacting a liquid meniscus over a substrate
WO2014152910A1 (en) 2013-03-14 2014-09-25 Tokyo Electron Limited Method and apparatus for substrate rinsing and drying
US9744642B2 (en) * 2013-10-29 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry feed system and method of providing slurry to chemical mechanical planarization station
FI126894B (en) * 2014-12-22 2017-07-31 Beneq Oy Nozzle head, apparatus and method for coating substrate surface
US11747742B2 (en) * 2017-04-11 2023-09-05 Visera Technologies Company Limited Apparatus and method for removing photoresist layer from alignment mark
CN109572223B (en) * 2018-12-25 2020-06-09 北海绩迅电子科技有限公司 Multi-station ink box cleaning control method and system
JP2022068575A (en) * 2020-10-22 2022-05-10 株式会社ディスコ Cleaning device
JP2022136767A (en) * 2021-03-08 2022-09-21 キオクシア株式会社 Substrate treatment apparatus and substrate treatment method
US20240050993A1 (en) * 2022-08-09 2024-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method

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Also Published As

Publication number Publication date
US8313580B2 (en) 2012-11-20
KR20100053518A (en) 2010-05-20
TW200926273A (en) 2009-06-16
US20080266367A1 (en) 2008-10-30
US20110265823A1 (en) 2011-11-03
US7997288B2 (en) 2011-08-16
TWI417950B (en) 2013-12-01
KR101493738B1 (en) 2015-02-16
WO2009008982A2 (en) 2009-01-15

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