WO2009006147A3 - Integrated steerability array arrangement for minimizing non-uniformity - Google Patents
Integrated steerability array arrangement for minimizing non-uniformity Download PDFInfo
- Publication number
- WO2009006147A3 WO2009006147A3 PCT/US2008/068144 US2008068144W WO2009006147A3 WO 2009006147 A3 WO2009006147 A3 WO 2009006147A3 US 2008068144 W US2008068144 W US 2008068144W WO 2009006147 A3 WO2009006147 A3 WO 2009006147A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- array
- plasma
- arrangement
- uniformity
- pumps
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010515063A JP5589840B2 (en) | 2007-06-29 | 2008-06-25 | Integrated steerability array placement to minimize non-uniformity |
CN200880022243.8A CN101720498B (en) | 2007-06-29 | 2008-06-25 | Integrated steerability array arrangement for minimizing non-uniformity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94736307P | 2007-06-29 | 2007-06-29 | |
US60/947,363 | 2007-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009006147A2 WO2009006147A2 (en) | 2009-01-08 |
WO2009006147A3 true WO2009006147A3 (en) | 2009-02-19 |
Family
ID=40226764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/068144 WO2009006147A2 (en) | 2007-06-29 | 2008-06-25 | Integrated steerability array arrangement for minimizing non-uniformity |
Country Status (7)
Country | Link |
---|---|
US (2) | US8528498B2 (en) |
JP (1) | JP5589840B2 (en) |
KR (1) | KR101476479B1 (en) |
CN (1) | CN101720498B (en) |
SG (2) | SG182968A1 (en) |
TW (1) | TWI471928B (en) |
WO (1) | WO2009006147A2 (en) |
Families Citing this family (12)
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US8528498B2 (en) * | 2007-06-29 | 2013-09-10 | Lam Research Corporation | Integrated steerability array arrangement for minimizing non-uniformity |
US9105449B2 (en) * | 2007-06-29 | 2015-08-11 | Lam Research Corporation | Distributed power arrangements for localizing power delivery |
JP5648349B2 (en) * | 2009-09-17 | 2015-01-07 | 東京エレクトロン株式会社 | Deposition equipment |
JP5735232B2 (en) * | 2010-08-02 | 2015-06-17 | 株式会社イー・エム・ディー | Plasma processing equipment |
US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
US20120298226A1 (en) * | 2011-03-24 | 2012-11-29 | Jake Jared Struempler | Modular Heating and/or Cooling System with a Vertical Manifold and Method of Making Same |
US20130059092A1 (en) * | 2011-09-07 | 2013-03-07 | Applied Materials, Inc. | Method and apparatus for gas distribution and plasma application in a linear deposition chamber |
US9175389B2 (en) * | 2012-12-21 | 2015-11-03 | Intermolecular, Inc. | ALD process window combinatorial screening tool |
US20170133202A1 (en) * | 2015-11-09 | 2017-05-11 | Lam Research Corporation | Computer addressable plasma density modification for etch and deposition processes |
US10519545B2 (en) | 2016-05-31 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate |
US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
JP2021019201A (en) * | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | Showerhead device for semiconductor processing system |
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-
2008
- 2008-06-24 US US12/145,378 patent/US8528498B2/en active Active
- 2008-06-25 SG SG2012047999A patent/SG182968A1/en unknown
- 2008-06-25 JP JP2010515063A patent/JP5589840B2/en active Active
- 2008-06-25 WO PCT/US2008/068144 patent/WO2009006147A2/en active Application Filing
- 2008-06-25 SG SG10201510613QA patent/SG10201510613QA/en unknown
- 2008-06-25 CN CN200880022243.8A patent/CN101720498B/en active Active
- 2008-06-25 KR KR1020107001978A patent/KR101476479B1/en active IP Right Grant
- 2008-06-27 TW TW97124187A patent/TWI471928B/en active
-
2013
- 2013-08-16 US US13/969,411 patent/US8991331B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269146A (en) * | 1999-03-18 | 2000-09-29 | Nippon Asm Kk | Plasma cvd film forming device |
US20050014382A1 (en) * | 2003-07-16 | 2005-01-20 | Samsung Electronics Co., Ltd. | Etching apparatus and method |
JP2006203199A (en) * | 2005-01-20 | 2006-08-03 | Samsung Sdi Co Ltd | Device and method for deposition |
Also Published As
Publication number | Publication date |
---|---|
CN101720498B (en) | 2011-11-02 |
KR101476479B1 (en) | 2014-12-24 |
US8528498B2 (en) | 2013-09-10 |
WO2009006147A2 (en) | 2009-01-08 |
SG10201510613QA (en) | 2016-01-28 |
TW200919579A (en) | 2009-05-01 |
JP5589840B2 (en) | 2014-09-17 |
US20090078677A1 (en) | 2009-03-26 |
SG182968A1 (en) | 2012-08-30 |
TWI471928B (en) | 2015-02-01 |
US20130334171A1 (en) | 2013-12-19 |
JP2010532581A (en) | 2010-10-07 |
KR20100045981A (en) | 2010-05-04 |
CN101720498A (en) | 2010-06-02 |
US8991331B2 (en) | 2015-03-31 |
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