WO2009006147A3 - Integrated steerability array arrangement for minimizing non-uniformity - Google Patents

Integrated steerability array arrangement for minimizing non-uniformity Download PDF

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Publication number
WO2009006147A3
WO2009006147A3 PCT/US2008/068144 US2008068144W WO2009006147A3 WO 2009006147 A3 WO2009006147 A3 WO 2009006147A3 US 2008068144 W US2008068144 W US 2008068144W WO 2009006147 A3 WO2009006147 A3 WO 2009006147A3
Authority
WO
WIPO (PCT)
Prior art keywords
array
plasma
arrangement
uniformity
pumps
Prior art date
Application number
PCT/US2008/068144
Other languages
French (fr)
Other versions
WO2009006147A2 (en
Inventor
Neil Benjamin
Original Assignee
Lam Res Corp
Neil Benjamin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Neil Benjamin filed Critical Lam Res Corp
Priority to JP2010515063A priority Critical patent/JP5589840B2/en
Priority to CN200880022243.8A priority patent/CN101720498B/en
Publication of WO2009006147A2 publication Critical patent/WO2009006147A2/en
Publication of WO2009006147A3 publication Critical patent/WO2009006147A3/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366Localised processing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting

Abstract

An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.
PCT/US2008/068144 2007-06-29 2008-06-25 Integrated steerability array arrangement for minimizing non-uniformity WO2009006147A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010515063A JP5589840B2 (en) 2007-06-29 2008-06-25 Integrated steerability array placement to minimize non-uniformity
CN200880022243.8A CN101720498B (en) 2007-06-29 2008-06-25 Integrated steerability array arrangement for minimizing non-uniformity

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94736307P 2007-06-29 2007-06-29
US60/947,363 2007-06-29

Publications (2)

Publication Number Publication Date
WO2009006147A2 WO2009006147A2 (en) 2009-01-08
WO2009006147A3 true WO2009006147A3 (en) 2009-02-19

Family

ID=40226764

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/068144 WO2009006147A2 (en) 2007-06-29 2008-06-25 Integrated steerability array arrangement for minimizing non-uniformity

Country Status (7)

Country Link
US (2) US8528498B2 (en)
JP (1) JP5589840B2 (en)
KR (1) KR101476479B1 (en)
CN (1) CN101720498B (en)
SG (2) SG182968A1 (en)
TW (1) TWI471928B (en)
WO (1) WO2009006147A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
US9105449B2 (en) * 2007-06-29 2015-08-11 Lam Research Corporation Distributed power arrangements for localizing power delivery
JP5648349B2 (en) * 2009-09-17 2015-01-07 東京エレクトロン株式会社 Deposition equipment
JP5735232B2 (en) * 2010-08-02 2015-06-17 株式会社イー・エム・ディー Plasma processing equipment
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US20120298226A1 (en) * 2011-03-24 2012-11-29 Jake Jared Struempler Modular Heating and/or Cooling System with a Vertical Manifold and Method of Making Same
US20130059092A1 (en) * 2011-09-07 2013-03-07 Applied Materials, Inc. Method and apparatus for gas distribution and plasma application in a linear deposition chamber
US9175389B2 (en) * 2012-12-21 2015-11-03 Intermolecular, Inc. ALD process window combinatorial screening tool
US20170133202A1 (en) * 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
US10519545B2 (en) 2016-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
JP2021019201A (en) * 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー.ブイ. Showerhead device for semiconductor processing system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269146A (en) * 1999-03-18 2000-09-29 Nippon Asm Kk Plasma cvd film forming device
US20050014382A1 (en) * 2003-07-16 2005-01-20 Samsung Electronics Co., Ltd. Etching apparatus and method
JP2006203199A (en) * 2005-01-20 2006-08-03 Samsung Sdi Co Ltd Device and method for deposition

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61174388A (en) * 1985-01-30 1986-08-06 Hitachi Ltd Etching device
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPS63107025A (en) 1986-10-24 1988-05-12 Hitachi Ltd Treater
DE4011933C2 (en) * 1990-04-12 1996-11-21 Balzers Hochvakuum Process for the reactive surface treatment of a workpiece and treatment chamber therefor
JP3039583B2 (en) * 1991-05-30 2000-05-08 株式会社日立製作所 Valve and semiconductor manufacturing apparatus using the same
JPH05102045A (en) * 1991-10-11 1993-04-23 Furukawa Electric Co Ltd:The Vapor growing apparatus
US5397962A (en) 1992-06-29 1995-03-14 Texas Instruments Incorporated Source and method for generating high-density plasma with inductive power coupling
JPH0637052A (en) * 1992-07-14 1994-02-10 Ryoden Semiconductor Syst Eng Kk Semiconductor processing device
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
JPH0878191A (en) 1994-09-06 1996-03-22 Kobe Steel Ltd Plasma treatment method and device therefor
JPH08115906A (en) 1994-10-14 1996-05-07 Dainippon Screen Mfg Co Ltd Plasma ashing device
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
JPH08222399A (en) 1994-12-14 1996-08-30 Adtec:Kk High-frequency plasma generator
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
KR100290813B1 (en) * 1995-08-17 2001-06-01 히가시 데쓰로 Plasma processing equipment
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
JPH1084697A (en) 1996-09-09 1998-03-31 Nakajima Toshiyuki Magnet flux-vector closed loop control
US6137231A (en) * 1996-09-10 2000-10-24 The Regents Of The University Of California Constricted glow discharge plasma source
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6537418B1 (en) * 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters
JPH11149998A (en) 1997-11-14 1999-06-02 Foi:Kk Plasma treating device
US6391166B1 (en) * 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
JP4151862B2 (en) * 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 CVD equipment
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
EP1073779A4 (en) * 1998-04-13 2007-05-30 Tokyo Electron Ltd Reduced impedance chamber
US5980686A (en) * 1998-04-15 1999-11-09 Applied Komatsu Technology, Inc. System and method for gas distribution in a dry etch process
US6204607B1 (en) 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core
JP3844274B2 (en) * 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 Plasma CVD apparatus and plasma CVD method
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6222718B1 (en) 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
JP3965258B2 (en) * 1999-04-30 2007-08-29 日本碍子株式会社 Ceramic gas supply structure for semiconductor manufacturing equipment
JP4313470B2 (en) * 1999-07-07 2009-08-12 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US6469919B1 (en) 1999-07-22 2002-10-22 Eni Technology, Inc. Power supplies having protection circuits
DE60041341D1 (en) * 1999-08-17 2009-02-26 Tokyo Electron Ltd PULSE PLASMA TREATMENT METHOD AND DEVICE
DE10060002B4 (en) * 1999-12-07 2016-01-28 Komatsu Ltd. Device for surface treatment
US6156667A (en) 1999-12-31 2000-12-05 Litmas, Inc. Methods and apparatus for plasma processing
US6392210B1 (en) 1999-12-31 2002-05-21 Russell F. Jewett Methods and apparatus for RF power process operations with automatic input power control
JP3411539B2 (en) 2000-03-06 2003-06-03 株式会社日立製作所 Plasma processing apparatus and plasma processing method
WO2001073814A2 (en) 2000-03-28 2001-10-04 Tokyo Electron Limited Method and apparatus for controlling power delivered to a multiple segment electrode
TW527436B (en) * 2000-06-23 2003-04-11 Anelva Corp Chemical vapor deposition system
JP4371543B2 (en) 2000-06-29 2009-11-25 日本電気株式会社 Remote plasma CVD apparatus and film forming method
AU2001288225A1 (en) * 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
JP2002100623A (en) * 2000-09-20 2002-04-05 Fuji Daiichi Seisakusho:Kk Thin film semiconductor manufacturing apparatus
JP4791637B2 (en) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 CVD apparatus and processing method using the same
US8877000B2 (en) * 2001-03-02 2014-11-04 Tokyo Electron Limited Shower head gas injection apparatus with secondary high pressure pulsed gas injection
IL153154A (en) * 2001-03-28 2007-03-08 Tadahiro Ohmi Plasma processing device
US6890386B2 (en) * 2001-07-13 2005-05-10 Aviza Technology, Inc. Modular injector and exhaust assembly
WO2003018176A1 (en) * 2001-08-25 2003-03-06 Accentus Plc Non-thermal plasma reactor
US6642661B2 (en) 2001-08-28 2003-11-04 Tokyo Electron Limited Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
US6764658B2 (en) * 2002-01-08 2004-07-20 Wisconsin Alumni Research Foundation Plasma generator
JP3982402B2 (en) * 2002-02-28 2007-09-26 東京エレクトロン株式会社 Processing apparatus and processing method
JP4008728B2 (en) 2002-03-20 2007-11-14 株式会社 液晶先端技術開発センター Plasma processing equipment
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
WO2004032214A1 (en) * 2002-10-07 2004-04-15 Sekisui Chemical Co., Ltd. Plasma film forming system
JP3902113B2 (en) * 2002-10-31 2007-04-04 三菱重工業株式会社 Plasma chemical vapor deposition method
WO2004064460A1 (en) * 2003-01-16 2004-07-29 Japan Science And Technology Agency High frequency power supply device and plasma generator
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
DE112004000057B4 (en) * 2003-05-27 2008-09-25 Matsushita Electric Works, Ltd., Kadoma Plasma treatment apparatus and plasma treatment method
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
JP4550507B2 (en) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ Plasma processing equipment
IES20050301A2 (en) 2005-05-11 2006-11-15 Univ Dublin City Plasma source
DE502005003768D1 (en) 2005-10-17 2008-05-29 Huettinger Elektronik Gmbh RF plasma supply device
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
US20080173238A1 (en) * 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
US9105449B2 (en) 2007-06-29 2015-08-11 Lam Research Corporation Distributed power arrangements for localizing power delivery
US20090000738A1 (en) 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
US8528498B2 (en) * 2007-06-29 2013-09-10 Lam Research Corporation Integrated steerability array arrangement for minimizing non-uniformity
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
JP5179389B2 (en) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 Shower head and substrate processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269146A (en) * 1999-03-18 2000-09-29 Nippon Asm Kk Plasma cvd film forming device
US20050014382A1 (en) * 2003-07-16 2005-01-20 Samsung Electronics Co., Ltd. Etching apparatus and method
JP2006203199A (en) * 2005-01-20 2006-08-03 Samsung Sdi Co Ltd Device and method for deposition

Also Published As

Publication number Publication date
CN101720498B (en) 2011-11-02
KR101476479B1 (en) 2014-12-24
US8528498B2 (en) 2013-09-10
WO2009006147A2 (en) 2009-01-08
SG10201510613QA (en) 2016-01-28
TW200919579A (en) 2009-05-01
JP5589840B2 (en) 2014-09-17
US20090078677A1 (en) 2009-03-26
SG182968A1 (en) 2012-08-30
TWI471928B (en) 2015-02-01
US20130334171A1 (en) 2013-12-19
JP2010532581A (en) 2010-10-07
KR20100045981A (en) 2010-05-04
CN101720498A (en) 2010-06-02
US8991331B2 (en) 2015-03-31

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