WO2008149741A1 - プラズマ処理装置のドライクリーニング方法 - Google Patents

プラズマ処理装置のドライクリーニング方法 Download PDF

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Publication number
WO2008149741A1
WO2008149741A1 PCT/JP2008/059794 JP2008059794W WO2008149741A1 WO 2008149741 A1 WO2008149741 A1 WO 2008149741A1 JP 2008059794 W JP2008059794 W JP 2008059794W WO 2008149741 A1 WO2008149741 A1 WO 2008149741A1
Authority
WO
WIPO (PCT)
Prior art keywords
high frequency
frequency power
processing apparatus
plasma processing
dielectric member
Prior art date
Application number
PCT/JP2008/059794
Other languages
English (en)
French (fr)
Inventor
Masahisa Ueda
Yutaka Kokaze
Mitsuhiro Endou
Koukou Suu
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to US12/598,081 priority Critical patent/US8133325B2/en
Priority to CN2008800099876A priority patent/CN101647099B/zh
Priority to EP08764810A priority patent/EP2157601A4/en
Priority to JP2009517814A priority patent/JPWO2008149741A1/ja
Publication of WO2008149741A1 publication Critical patent/WO2008149741A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/905—Odor releasing material

Abstract

　このプラズマ処理装置のドライクリーニング方法は、誘電体部材を備えた真空容器と；前記誘電体部材の外側に設けられた平面状電極及び高周波アンテナと；これら高周波アンテナ及び平面状電極のそれぞれに高周波電力を供給することにより、前記誘電体部材を介して前記真空容器内に高周波電力を導入して誘導結合プラズマを発生させる高周波電源と；を備えたプラズマ処理装置のドライクリーニング方法であって、前記真空容器内にフッ素を含むガスを導入すると共に、前記高周波電源により、前記真空容器内に高周波電力を導入して前記フッ素を含むガスに誘導結合プラズマを発生させる工程と；この誘導結合プラズマにより前記誘電体部材に付着した貴金属および強誘電体の少なくとも一方を含む生成物を除去する工程と；を含む。
PCT/JP2008/059794 2007-05-31 2008-05-28 プラズマ処理装置のドライクリーニング方法 WO2008149741A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/598,081 US8133325B2 (en) 2007-05-31 2008-05-28 Dry cleaning method for plasma processing apparatus
CN2008800099876A CN101647099B (zh) 2007-05-31 2008-05-28 等离子体处理装置的干式清洁方法
EP08764810A EP2157601A4 (en) 2007-05-31 2008-05-28 DRY CLEANING METHOD OF PLASMA PROCESSING APPARATUS
JP2009517814A JPWO2008149741A1 (ja) 2007-05-31 2008-05-28 プラズマ処理装置のドライクリーニング方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-145018 2007-05-31
JP2007145018 2007-05-31

Publications (1)

Publication Number Publication Date
WO2008149741A1 true WO2008149741A1 (ja) 2008-12-11

Family

ID=40093560

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059794 WO2008149741A1 (ja) 2007-05-31 2008-05-28 プラズマ処理装置のドライクリーニング方法

Country Status (7)

Country Link
US (1) US8133325B2 (ja)
EP (1) EP2157601A4 (ja)
JP (1) JPWO2008149741A1 (ja)
KR (1) KR20090130032A (ja)
CN (1) CN101647099B (ja)
TW (1) TWI453816B (ja)
WO (1) WO2008149741A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040777A (ja) * 2008-08-05 2010-02-18 Nec Corp 半導体装置の製造方法およびプラズマエッチング装置
JP2013030696A (ja) * 2011-07-29 2013-02-07 Ulvac Japan Ltd プラズマエッチング装置、及びプラズマクリーニング方法
WO2013092777A1 (en) * 2011-12-22 2013-06-27 Solvay Sa Plasma chamber apparatus and a method for cleaning a chamber
JP7430264B2 (ja) 2019-12-26 2024-02-09 ベイジン・ナウラ・マイクロエレクトロニクス・イクイップメント・カンパニー・リミテッド 半導体処理装置及び半導体処理装置の誘電体窓洗浄方法

Families Citing this family (3)

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US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
KR102245729B1 (ko) 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
US10912182B2 (en) * 2018-04-30 2021-02-02 GM Global Technology Operations LLC Sensor cleaning apparatus

Citations (4)

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JPH08316210A (ja) * 1995-05-22 1996-11-29 Ulvac Japan Ltd プラズマ処理方法及び装置
JP2003273077A (ja) * 2002-03-19 2003-09-26 Fujitsu Ltd ドライクリーニング方法及びドライクリーニング用基板
JP2006344785A (ja) 2005-06-09 2006-12-21 Fujitsu Ltd 半導体装置とその製造方法
JP2007145018A (ja) 1996-01-29 2007-06-14 W L Gore & Assoc Inc 多孔質ポリテトラフルオロエチレンチューブの製造方法

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EP0647163B1 (en) * 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
JP2000114245A (ja) * 1998-10-05 2000-04-21 Hitachi Ltd 半導体集積回路装置およびその製造方法
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Publication number Priority date Publication date Assignee Title
JPH08316210A (ja) * 1995-05-22 1996-11-29 Ulvac Japan Ltd プラズマ処理方法及び装置
JP3429391B2 (ja) 1995-05-22 2003-07-22 株式会社アルバック プラズマ処理方法及び装置
JP2007145018A (ja) 1996-01-29 2007-06-14 W L Gore & Assoc Inc 多孔質ポリテトラフルオロエチレンチューブの製造方法
JP2003273077A (ja) * 2002-03-19 2003-09-26 Fujitsu Ltd ドライクリーニング方法及びドライクリーニング用基板
JP2006344785A (ja) 2005-06-09 2006-12-21 Fujitsu Ltd 半導体装置とその製造方法

Non-Patent Citations (1)

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Title
See also references of EP2157601A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040777A (ja) * 2008-08-05 2010-02-18 Nec Corp 半導体装置の製造方法およびプラズマエッチング装置
JP2013030696A (ja) * 2011-07-29 2013-02-07 Ulvac Japan Ltd プラズマエッチング装置、及びプラズマクリーニング方法
WO2013092777A1 (en) * 2011-12-22 2013-06-27 Solvay Sa Plasma chamber apparatus and a method for cleaning a chamber
JP7430264B2 (ja) 2019-12-26 2024-02-09 ベイジン・ナウラ・マイクロエレクトロニクス・イクイップメント・カンパニー・リミテッド 半導体処理装置及び半導体処理装置の誘電体窓洗浄方法

Also Published As

Publication number Publication date
CN101647099B (zh) 2011-08-10
CN101647099A (zh) 2010-02-10
EP2157601A4 (en) 2011-05-18
TW200915417A (en) 2009-04-01
EP2157601A1 (en) 2010-02-24
US20100083981A1 (en) 2010-04-08
TWI453816B (zh) 2014-09-21
KR20090130032A (ko) 2009-12-17
JPWO2008149741A1 (ja) 2010-08-26
US8133325B2 (en) 2012-03-13

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