WO2008146442A1 - Epitaxial wafer manufacturing method and epitaxial wafer - Google Patents
Epitaxial wafer manufacturing method and epitaxial wafer Download PDFInfo
- Publication number
- WO2008146442A1 WO2008146442A1 PCT/JP2008/001027 JP2008001027W WO2008146442A1 WO 2008146442 A1 WO2008146442 A1 WO 2008146442A1 JP 2008001027 W JP2008001027 W JP 2008001027W WO 2008146442 A1 WO2008146442 A1 WO 2008146442A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- epitaxial
- epitaxial wafer
- layer
- carbon
- heat treatment
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 4
- -1 carbon ions Chemical class 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Provided is an epitaxial wafer manufacturing method wherein a carbon implanted layer is formed by implanting carbon ions, then, heat treatment is performed in an atmosphere containing ammonia or nitrogen by using a rapid heating/cooling (RTA) apparatus, and an epitaxial layer is formed on the heat-treated silicon wafer. By surely performing recovery heat treatment prior to the step of implanting carbon ions to form the carbon ion implanted layer and forming the silicon epitaxial layer on the implanted surface, an epitaxial wafer having high gettering performance can be manufactured at low cost without forming an epitaxial defect on the epitaxial layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-138548 | 2007-05-25 | ||
JP2007138548A JP2008294245A (en) | 2007-05-25 | 2007-05-25 | Method of manufacturing epitaxial wafer, and epitaxial wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008146442A1 true WO2008146442A1 (en) | 2008-12-04 |
Family
ID=40074720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/001027 WO2008146442A1 (en) | 2007-05-25 | 2008-04-18 | Epitaxial wafer manufacturing method and epitaxial wafer |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008294245A (en) |
TW (1) | TW200903646A (en) |
WO (1) | WO2008146442A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011079033A1 (en) * | 2009-12-21 | 2011-06-30 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
WO2013184715A1 (en) * | 2012-06-04 | 2013-12-12 | Nusola Inc. | Photovoltaic cell and methods for manufacture |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
WO2018164759A1 (en) * | 2017-03-06 | 2018-09-13 | Qualcomm Incorporated | Gettering layer formation in a substrate and integrated circuit comprising the substrate |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5276863B2 (en) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer |
JP2012059849A (en) * | 2010-09-08 | 2012-03-22 | Shin Etsu Handotai Co Ltd | Silicon epitaxial wafer and manufacturing method thereof |
DE112012002072B4 (en) | 2011-05-13 | 2023-11-16 | Sumco Corp. | Method for producing an epitaxial silicon wafer, epitaxial silicon wafer and method for producing a solid-state image pickup device |
JP6278591B2 (en) | 2012-11-13 | 2018-02-14 | 株式会社Sumco | Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device |
JP6289805B2 (en) * | 2012-11-13 | 2018-03-07 | 株式会社Sumco | Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device |
JP5776670B2 (en) | 2012-11-13 | 2015-09-09 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method |
JP6280301B2 (en) * | 2012-11-13 | 2018-02-14 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method |
JP5799935B2 (en) | 2012-11-13 | 2015-10-28 | 株式会社Sumco | Manufacturing method of semiconductor epitaxial wafer, semiconductor epitaxial wafer, and manufacturing method of solid-state imaging device |
JP5776669B2 (en) | 2012-11-13 | 2015-09-09 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method, epitaxial silicon wafer, and solid-state imaging device manufacturing method |
JP6065279B2 (en) * | 2013-05-01 | 2017-01-25 | 信越半導体株式会社 | Manufacturing method of semiconductor device |
JP6056772B2 (en) | 2014-01-07 | 2017-01-11 | 株式会社Sumco | Epitaxial wafer manufacturing method and epitaxial wafer |
JP6427894B2 (en) * | 2014-02-21 | 2018-11-28 | 株式会社Sumco | Epitaxial wafer manufacturing method |
JP2017123477A (en) * | 2017-02-28 | 2017-07-13 | 株式会社Sumco | Method for manufacturing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method for manufacturing solid-state imaging device |
JP2017175145A (en) * | 2017-05-01 | 2017-09-28 | 株式会社Sumco | Semiconductor epitaxial wafer manufacturing method, semiconductor epitaxial wafer, and solid-state imaging element manufacturing method |
JP7282019B2 (en) | 2019-12-05 | 2023-05-26 | グローバルウェーハズ・ジャパン株式会社 | Silicon wafer and its heat treatment method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04130731A (en) * | 1990-09-21 | 1992-05-01 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPH06338507A (en) * | 1993-03-30 | 1994-12-06 | Sony Corp | Semiconductor substrate and solid-state image-pickup device and manufacture thereof |
JP2003031582A (en) * | 2000-11-28 | 2003-01-31 | Sumitomo Mitsubishi Silicon Corp | Manufacturing method for silicon wafer and silicon wafer |
-
2007
- 2007-05-25 JP JP2007138548A patent/JP2008294245A/en active Pending
-
2008
- 2008-04-18 WO PCT/JP2008/001027 patent/WO2008146442A1/en active Application Filing
- 2008-04-22 TW TW097114673A patent/TW200903646A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04130731A (en) * | 1990-09-21 | 1992-05-01 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
JPH06338507A (en) * | 1993-03-30 | 1994-12-06 | Sony Corp | Semiconductor substrate and solid-state image-pickup device and manufacture thereof |
JP2003031582A (en) * | 2000-11-28 | 2003-01-31 | Sumitomo Mitsubishi Silicon Corp | Manufacturing method for silicon wafer and silicon wafer |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011079033A1 (en) * | 2009-12-21 | 2011-06-30 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
US8173535B2 (en) | 2009-12-21 | 2012-05-08 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
WO2013184715A1 (en) * | 2012-06-04 | 2013-12-12 | Nusola Inc. | Photovoltaic cell and methods for manufacture |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
WO2018164759A1 (en) * | 2017-03-06 | 2018-09-13 | Qualcomm Incorporated | Gettering layer formation in a substrate and integrated circuit comprising the substrate |
CN110383433A (en) * | 2017-03-06 | 2019-10-25 | 高通股份有限公司 | Symmicton in substrate is formed and the integrated circuit including substrate |
US10522367B2 (en) | 2017-03-06 | 2019-12-31 | Qualcomm Incorporated | Gettering layer formation and substrate |
Also Published As
Publication number | Publication date |
---|---|
JP2008294245A (en) | 2008-12-04 |
TW200903646A (en) | 2009-01-16 |
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