WO2008112000A3 - Large area integration of quartz resonators with electronics - Google Patents

Large area integration of quartz resonators with electronics Download PDF

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Publication number
WO2008112000A3
WO2008112000A3 PCT/US2007/074793 US2007074793W WO2008112000A3 WO 2008112000 A3 WO2008112000 A3 WO 2008112000A3 US 2007074793 W US2007074793 W US 2007074793W WO 2008112000 A3 WO2008112000 A3 WO 2008112000A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronics
quartz
large area
wafer
area integration
Prior art date
Application number
PCT/US2007/074793
Other languages
French (fr)
Other versions
WO2008112000A2 (en
Inventor
David T Chang
Randall L Kubena
Original Assignee
Hrl Lab Llc
David T Chang
Randall L Kubena
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hrl Lab Llc, David T Chang, Randall L Kubena filed Critical Hrl Lab Llc
Publication of WO2008112000A2 publication Critical patent/WO2008112000A2/en
Publication of WO2008112000A3 publication Critical patent/WO2008112000A3/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
    • Y10T29/53178—Chip component

Abstract

Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.
PCT/US2007/074793 2006-08-09 2007-07-31 Large area integration of quartz resonators with electronics WO2008112000A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/502,336 2006-08-09
US11/502,336 US7555824B2 (en) 2006-08-09 2006-08-09 Method for large scale integration of quartz-based devices

Publications (2)

Publication Number Publication Date
WO2008112000A2 WO2008112000A2 (en) 2008-09-18
WO2008112000A3 true WO2008112000A3 (en) 2008-12-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/074793 WO2008112000A2 (en) 2006-08-09 2007-07-31 Large area integration of quartz resonators with electronics

Country Status (3)

Country Link
US (2) US7555824B2 (en)
TW (1) TW200826722A (en)
WO (1) WO2008112000A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004001849A2 (en) * 2002-04-30 2003-12-31 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
US7994877B1 (en) * 2008-11-10 2011-08-09 Hrl Laboratories, Llc MEMS-based quartz hybrid filters and a method of making the same
US8766745B1 (en) 2007-07-25 2014-07-01 Hrl Laboratories, Llc Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same
US7185695B1 (en) * 2005-09-01 2007-03-06 United Technologies Corporation Investment casting pattern manufacture
US7555824B2 (en) * 2006-08-09 2009-07-07 Hrl Laboratories, Llc Method for large scale integration of quartz-based devices
US7884930B2 (en) * 2007-06-14 2011-02-08 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
US7830227B1 (en) * 2008-09-18 2010-11-09 Hrl Laboratories, Llc Device having integrated MEMS switches and filters
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
US20110300669A1 (en) * 2010-06-07 2011-12-08 Chi-Chih Shen Method for Making Die Assemblies
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
US8567041B1 (en) 2011-06-15 2013-10-29 Hrl Laboratories, Llc Method of fabricating a heated quartz crystal resonator
US8910355B2 (en) * 2011-12-12 2014-12-16 International Business Machines Corporation Method of manufacturing a film bulk acoustic resonator with a loading element
US9250074B1 (en) 2013-04-12 2016-02-02 Hrl Laboratories, Llc Resonator assembly comprising a silicon resonator and a quartz resonator
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
US10110198B1 (en) 2015-12-17 2018-10-23 Hrl Laboratories, Llc Integrated quartz MEMS tuning fork resonator/oscillator
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
US10325791B1 (en) 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990028493A (en) * 1995-06-30 1999-04-15 니시무로 타이죠 Electronic component and method of production thereof
KR20030077004A (en) * 2001-01-18 2003-09-29 인피네온 테크놀로지스 아게 Filter devices and method for fabricating filter devices

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US392650A (en) 1888-11-13 watrous
US3766616A (en) 1972-03-22 1973-10-23 Statek Corp Microresonator packaging and tuning
US4364016A (en) * 1980-11-03 1982-12-14 Sperry Corporation Method for post fabrication frequency trimming of surface acoustic wave devices
US4426769A (en) 1981-08-14 1984-01-24 Amp Incorporated Moisture getter for integrated circuit packages
US4442574A (en) * 1982-07-26 1984-04-17 General Electric Company Frequency trimming of saw resonators
US4618262A (en) 1984-04-13 1986-10-21 Applied Materials, Inc. Laser interferometer system and method for monitoring and controlling IC processing
DE3650562T2 (en) 1985-04-11 1997-03-20 Toyo Communication Equip PIEZOELECTRIC RESONATOR FOR GENERATING HARMONICS
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
GB2208318B (en) 1987-07-24 1991-11-06 Yazaki Corp Vibrational angular velocity sensor
ES2056580T3 (en) 1990-05-18 1994-10-01 British Aerospace INERTIAL SENSORS.
US5421312A (en) 1990-11-03 1995-06-06 Dawson Royalties Limited Electrical circuit
US6155115A (en) 1991-01-02 2000-12-05 Ljung; Per Vibratory angular rate sensor
US5668057A (en) 1991-03-13 1997-09-16 Matsushita Electric Industrial Co., Ltd. Methods of manufacture for electronic components having high-frequency elements
US5260596A (en) 1991-04-08 1993-11-09 Motorola, Inc. Monolithic circuit with integrated bulk structure resonator
JP2973560B2 (en) * 1991-04-22 1999-11-08 松下電器産業株式会社 Processing method of crystal unit
US5203208A (en) 1991-04-29 1993-04-20 The Charles Stark Draper Laboratory Symmetrical micromechanical gyroscope
EP0531985B1 (en) 1991-09-12 1999-02-24 Matsushita Electric Industrial Co., Ltd. Electro-acoustic hybrid integrated circuit and manufacturing method thereof
US5665915A (en) 1992-03-25 1997-09-09 Fuji Electric Co., Ltd. Semiconductor capacitive acceleration sensor
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
JPH06350376A (en) 1993-01-25 1994-12-22 Matsushita Electric Ind Co Ltd Piezoelectric device air-tightly sealed and air-tight sealing package
US5646346A (en) 1994-11-10 1997-07-08 Okada; Kazuhiro Multi-axial angular velocity sensor
WO1994025977A1 (en) 1993-04-28 1994-11-10 Applied Materials, Inc. Method and apparatus for etchback endpoint detection
JPH06350371A (en) * 1993-06-10 1994-12-22 Matsushita Electric Ind Co Ltd Manufacture of piezoelectric device
US6044705A (en) 1993-10-18 2000-04-04 Xros, Inc. Micromachined members coupled for relative rotation by torsion bars
FR2718231B1 (en) 1994-04-05 1996-06-21 Sofie Method and device for in situ quantification of the morphology and thickness in a localized area of a surface layer being treated on a thin layer structure.
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5480747A (en) 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
DE4442033C2 (en) 1994-11-25 1997-12-18 Bosch Gmbh Robert Yaw rate sensor
US5578813A (en) 1995-03-02 1996-11-26 Allen; Ross R. Freehand image scanning device which compensates for non-linear movement
DE69510032T2 (en) 1995-03-31 2000-01-27 Ibm Method and apparatus for monitoring dry etching of a dielectric film to a given thickness
US6323550B1 (en) 1995-06-06 2001-11-27 Analog Devices, Inc. Package for sealing an integrated circuit die
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US5578976A (en) 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
DE19530007C2 (en) 1995-08-16 1998-11-26 Bosch Gmbh Robert Yaw rate sensor
US5756895A (en) 1995-09-01 1998-05-26 Hughes Aircraft Company Tunneling-based rate gyros with simple drive and sense axis coupling
KR0171009B1 (en) 1995-12-07 1999-05-01 양승택 Vibrating disk type micro-gyroscope and its manufacturing method
JP3344888B2 (en) 1995-12-28 2002-11-18 日本碍子株式会社 Piezoelectric / electrostrictive film element and method of manufacturing the same
JP3620554B2 (en) 1996-03-25 2005-02-16 信越半導体株式会社 Semiconductor wafer manufacturing method
JP3252702B2 (en) 1996-03-28 2002-02-04 信越半導体株式会社 Method for manufacturing semiconductor single crystal mirror-finished wafer including vapor phase etching step and semiconductor single crystal mirror wafer manufactured by this method
US5894090A (en) 1996-05-31 1999-04-13 California Institute Of Technology Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same
US6367326B1 (en) 1996-07-10 2002-04-09 Wacoh Corporation Angular velocity sensor
DE19641284C1 (en) 1996-10-07 1998-05-20 Inst Mikro Und Informationstec Rotation rate sensor with decoupled orthogonal primary and secondary vibrations
US5928532A (en) 1996-11-11 1999-07-27 Tokyo Electron Limited Method of detecting end point of plasma processing and apparatus for the same
DE19648425C1 (en) 1996-11-22 1998-01-02 Siemens Ag Micro-mechanical rotation rate sensor esp. for measuring angular speed
DE19719601A1 (en) 1997-05-09 1998-11-12 Bosch Gmbh Robert Acceleration sensor with spring-mounted seismic mass
US6067016A (en) 1997-06-02 2000-05-23 Avery Dennison Corporation EAS marker and method of manufacturing same
US6196059B1 (en) 1997-08-11 2001-03-06 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Piezoelectric resonator, process for the fabrication thereof including its use as a sensor element for the determination of the concentration of a substance contained in a liquid and/or for the determination of the physical properties of the liquid
US6122961A (en) 1997-09-02 2000-09-26 Analog Devices, Inc. Micromachined gyros
JPH11176815A (en) 1997-12-15 1999-07-02 Ricoh Co Ltd End point judging method of dry etching and dry etching equipment
US6145380A (en) 1997-12-18 2000-11-14 Alliedsignal Silicon micro-machined accelerometer using integrated electrical and mechanical packaging
KR100411318B1 (en) 1998-02-03 2003-12-18 가가쿠 기쥬츠 신코 지교단 End point detecting method for semiconductor plasma processing
US6081334A (en) 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6151964A (en) 1998-05-25 2000-11-28 Citizen Watch Co., Ltd. Angular velocity sensing device
JP3647267B2 (en) 1998-05-29 2005-05-11 キヤノン株式会社 Surface plasmon resonance sensor device using surface emitting laser
US5920012A (en) 1998-06-16 1999-07-06 Boeing North American Micromechanical inertial sensor
JP3882973B2 (en) 1998-06-22 2007-02-21 アイシン精機株式会社 Angular velocity sensor
JP3106395B2 (en) 1998-07-10 2000-11-06 株式会社村田製作所 Angular velocity sensor
GB9817347D0 (en) 1998-08-11 1998-10-07 British Aerospace An angular rate sensor
US6009751A (en) 1998-10-27 2000-01-04 Ljung; Bo Hans Gunnar Coriolis gyro sensor
US6164134A (en) 1999-01-29 2000-12-26 Hughes Electronics Corporation Balanced vibratory gyroscope and amplitude control for same
US6584845B1 (en) 1999-02-10 2003-07-01 California Institute Of Technology Inertial sensor and method of use
JP4151164B2 (en) * 1999-03-19 2008-09-17 株式会社デンソー Manufacturing method of semiconductor device
WO2000068640A2 (en) 1999-04-21 2000-11-16 The Regents Of The University Of California Micro-machined angle-measuring gyroscope
US6289733B1 (en) 1999-05-12 2001-09-18 Hughes Electronics Corporation Planar vibratory gyroscopes
JP3627907B2 (en) 1999-05-21 2005-03-09 信越化学工業株式会社 Method for producing synthetic quartz glass substrate for photomask
US6305222B1 (en) 1999-05-27 2001-10-23 Delphi Technologies, Inc. Road vibration compensated angular rate sensor
US6367786B1 (en) 1999-06-07 2002-04-09 California Institute Of Technology Micromachined double resonator
EP2383776B1 (en) 1999-06-22 2015-02-25 President and Fellows of Harvard College Solid state nanopore device for evaluating biopolymers
US7118657B2 (en) 1999-06-22 2006-10-10 President And Fellows Of Harvard College Pulsed ion beam control of solid state features
FR2797140B1 (en) 1999-07-30 2001-11-02 Thomson Csf Sextant METHOD FOR MANUFACTURING THROUGH CONNECTIONS IN A SUBSTRATE AND SUBSTRATE PROVIDED WITH SUCH CONNECTIONS
US6245590B1 (en) 1999-08-05 2001-06-12 Microvision Inc. Frequency tunable resonant scanner and method of making
JP2001066248A (en) 1999-08-26 2001-03-16 Fuji Photo Film Co Ltd Surface plasmon sensor
US6473713B1 (en) 1999-09-20 2002-10-29 American Gnc Corporation Processing method for motion measurement
EP1226422B1 (en) 1999-10-06 2007-11-28 Oxonica Inc. Surface enhanced spectroscopy-active composite nanoparticles
JP2001185519A (en) * 1999-12-24 2001-07-06 Hitachi Ltd Semiconductor device and method of manufacturing the same
GB0000619D0 (en) 2000-01-13 2000-03-01 British Aerospace Accelerometer
JP2001244240A (en) 2000-02-25 2001-09-07 Speedfam Co Ltd Method of manufacturing semiconductor wafer
TW492106B (en) 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
EP1326293A1 (en) 2000-07-17 2003-07-09 Nagaura, Kumiko Piezoelectric device and acousto-electric transducer and method for manufacturing the same
US6628177B2 (en) 2000-08-24 2003-09-30 The Regents Of The University Of Michigan Micromechanical resonator device and micromechanical device utilizing same
JP3639809B2 (en) 2000-09-01 2005-04-20 キヤノン株式会社 ELECTRON EMITTING ELEMENT, ELECTRON EMITTING DEVICE, LIGHT EMITTING DEVICE, AND IMAGE DISPLAY DEVICE
US6426296B1 (en) 2000-09-08 2002-07-30 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for obtaining a precision thickness in semiconductor and other wafers
US20020066317A1 (en) 2000-12-06 2002-06-06 Gang Lin Micro yaw rate sensors
US7307775B2 (en) * 2000-12-07 2007-12-11 Texas Instruments Incorporated Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
KR100354442B1 (en) 2000-12-11 2002-09-28 삼성전자 주식회사 Method of forming spin on glass type insulation layer
DE10063491A1 (en) 2000-12-20 2002-06-27 Bayer Ag Sour polishing slurry for chemical mechanical polishing of SiO¶2¶ insulation layers
JP4071476B2 (en) 2001-03-21 2008-04-02 株式会社東芝 Semiconductor wafer and method for manufacturing semiconductor wafer
US6920765B2 (en) 2001-06-04 2005-07-26 The Regents Of The University Of California Combined advanced finishing and UV laser conditioning process for producing damage resistant optics
US6513380B2 (en) 2001-06-19 2003-02-04 Microsensors, Inc. MEMS sensor with single central anchor and motion-limiting connection geometry
US6715352B2 (en) 2001-06-26 2004-04-06 Microsensors, Inc. Method of designing a flexure system for tuning the modal response of a decoupled micromachined gyroscope and a gyroscoped designed according to the method
US6629460B2 (en) 2001-08-10 2003-10-07 The Boeing Company Isolated resonator gyroscope
TWI220423B (en) 2001-08-30 2004-08-21 Hrl Lab Llc A method of fabrication of a sensor
GB0122254D0 (en) 2001-09-14 2001-11-07 Bae Systems Plc Vibratory gyroscopic rate sensor
JP3991894B2 (en) 2002-03-18 2007-10-17 セイコーエプソン株式会社 Piezoelectric actuator manufacturing method, liquid jet head manufacturing method, and actuator base member
JP2005180921A (en) 2002-04-03 2005-07-07 Japan Science & Technology Agency Surface of biosensor chip for carrying polyethylene glycol modified nanoparticles
WO2004001849A2 (en) 2002-04-30 2003-12-31 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
US6796179B2 (en) 2002-05-17 2004-09-28 California Institute Of Technology Split-resonator integrated-post MEMS gyroscope
US7168318B2 (en) 2002-08-12 2007-01-30 California Institute Of Technology Isolated planar mesogyroscope
US7040163B2 (en) 2002-08-12 2006-05-09 The Boeing Company Isolated planar gyroscope with internal radial sensing and actuation
US6806557B2 (en) 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
US6985051B2 (en) 2002-12-17 2006-01-10 The Regents Of The University Of Michigan Micromechanical resonator device and method of making a micromechanical device
CN102620959B (en) 2002-12-26 2015-12-16 梅索磅秤技术有限公司 Assay cartridges and using method thereof
WO2004073824A2 (en) 2003-02-20 2004-09-02 Dow Global Technologies Inc. Method of synthesis of polyarylenes and the polyarylenes made by such method
US7581443B2 (en) 2005-07-20 2009-09-01 The Boeing Company Disc resonator gyroscopes
KR100558439B1 (en) * 2003-09-15 2006-03-10 삼성전기주식회사 FBAR of Wafer Level Pakage and manufacturing method thereof
SE526221C2 (en) * 2003-12-22 2005-08-02 Volvo Constr Equip Holding Se Transmission comprising first, second and third parallel shafts and gears supported by the shafts
JP2008502911A (en) 2004-06-12 2008-01-31 アクバイオ・リミテッド Analytical instrument with an array of sensors and calibration elements
EP1771724A1 (en) 2004-07-29 2007-04-11 MNT Innovations Pty Ltd Biological saw sensor
US7231824B2 (en) 2005-03-22 2007-06-19 Honeywell International Inc. Use of electrodes to cancel lift effects in inertial sensors
GB0506710D0 (en) 2005-04-01 2005-05-11 Akubio Ltd Cartridge for a fluid sample analyser
US7543496B2 (en) 2006-03-27 2009-06-09 Georgia Tech Research Corporation Capacitive bulk acoustic wave disk gyroscopes
US7555824B2 (en) 2006-08-09 2009-07-07 Hrl Laboratories, Llc Method for large scale integration of quartz-based devices
US7605916B2 (en) 2006-09-21 2009-10-20 Intel Corporation Online analyte detection by surface enhanced Raman scattering (SERS)
US7493814B2 (en) 2006-12-22 2009-02-24 The Boeing Company Vibratory gyroscope with parasitic mode damping
US7884930B2 (en) * 2007-06-14 2011-02-08 Hrl Laboratories, Llc Integrated quartz biological sensor and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990028493A (en) * 1995-06-30 1999-04-15 니시무로 타이죠 Electronic component and method of production thereof
KR20030077004A (en) * 2001-01-18 2003-09-29 인피네온 테크놀로지스 아게 Filter devices and method for fabricating filter devices

Also Published As

Publication number Publication date
TW200826722A (en) 2008-06-16
US7555824B2 (en) 2009-07-07
US20080034575A1 (en) 2008-02-14
WO2008112000A2 (en) 2008-09-18
US8138016B2 (en) 2012-03-20
US20090189294A1 (en) 2009-07-30

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