WO2008103948A8 - Amorphous carbon-containing photovoltaic devices - Google Patents

Amorphous carbon-containing photovoltaic devices Download PDF

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Publication number
WO2008103948A8
WO2008103948A8 PCT/US2008/054787 US2008054787W WO2008103948A8 WO 2008103948 A8 WO2008103948 A8 WO 2008103948A8 US 2008054787 W US2008054787 W US 2008054787W WO 2008103948 A8 WO2008103948 A8 WO 2008103948A8
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WO
WIPO (PCT)
Prior art keywords
devices
semiconducting layer
amorphous carbon
photovoltaic devices
type semiconducting
Prior art date
Application number
PCT/US2008/054787
Other languages
French (fr)
Other versions
WO2008103948A1 (en
Inventor
Amane Mochizuki
Toshitaka Nakamura
Masakatsu Urairi
Guang Pan
Original Assignee
Nitto Denko Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corporation filed Critical Nitto Denko Corporation
Publication of WO2008103948A1 publication Critical patent/WO2008103948A1/en
Publication of WO2008103948A8 publication Critical patent/WO2008103948A8/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
PCT/US2008/054787 2007-02-22 2008-02-22 Carbon-containing semiconducting devices and methods of making thereof WO2008103948A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90297907P 2007-02-22 2007-02-22
US60/902,979 2007-02-22

Publications (2)

Publication Number Publication Date
WO2008103948A1 WO2008103948A1 (en) 2008-08-28
WO2008103948A8 true WO2008103948A8 (en) 2009-12-03

Family

ID=39467260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/054787 WO2008103948A1 (en) 2007-02-22 2008-02-22 Carbon-containing semiconducting devices and methods of making thereof

Country Status (2)

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US (2) US20080277652A1 (en)
WO (1) WO2008103948A1 (en)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
TW200832725A (en) * 2007-01-18 2008-08-01 Univ Nat Central Method of improving current distribution by non-uniform conductive layer
WO2008103948A1 (en) * 2007-02-22 2008-08-28 Nitto Denko Corporation Carbon-containing semiconducting devices and methods of making thereof
US7666327B1 (en) * 2007-05-22 2010-02-23 Oceanit Laboratories, Inc. Multifunctional cementitious nanocomposite material and methods of making the same
US7713448B1 (en) * 2007-08-21 2010-05-11 Oceanit Laboratories, Inc. Carbon nanomaterial dispersion and stabilization
CN101577272B (en) * 2008-05-06 2013-04-10 鸿富锦精密工业（深圳）有限公司 Luminescence module
WO2010115007A1 (en) * 2009-04-03 2010-10-07 Board Of Trustees Of The University Of Arkansas Photovoltaic device using single wall carbon nanotubes and method of fabricating the same
US9051216B1 (en) 2010-04-20 2015-06-09 Oceanit Laboratories, Inc. Highly durable composite and manufacturing thereof
WO2011137508A1 (en) 2010-05-05 2011-11-10 National Research Council Of Canada Asphaltene components as organic electronic materials
EP2836238B1 (en) 2012-04-12 2018-05-02 Nitto Denko Corporation Co-polymer conjugates
US9078926B2 (en) 2012-05-07 2015-07-14 Nitto Denko Corporation Polymer conjugates with a linker
US10224258B2 (en) * 2013-03-22 2019-03-05 Applied Materials, Inc. Method of curing thermoplastics with microwave energy
TW201622196A (en) * 2014-10-14 2016-06-16 Sekisui Chemical Co Ltd Solar cell

Family Cites Families (12)

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US5145759A (en) 1989-04-21 1992-09-08 Agfa-Gevaert, N.V. Electrophotographic recording material
JPH0826456B2 (en) 1990-05-24 1996-03-13 ナノテック株式会社 Ion source and diamond-like carbon thin film manufacturing apparatus equipped with this ion source
RU2152106C1 (en) * 1996-06-19 2000-06-27 Матсусита Электрик Индастриал Ко., Лтд. Optoelectronic material, device which uses said material, and method for manufacturing of said material
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
JP2001026873A (en) 1999-07-13 2001-01-30 Nanotec Corp Film forming device of hard carbon film
JP2002033497A (en) 2000-07-14 2002-01-31 Nihon University Solar cell and panel thereof
JP2002094097A (en) 2000-09-18 2002-03-29 Ube Ind Ltd Carbon material for solar cell and solar cell
US20020121915A1 (en) * 2001-03-05 2002-09-05 Agere Systems Guardian Corp. Automated pattern clustering detection for wafer probe maps
JP2003209270A (en) 2002-01-15 2003-07-25 Toyota Central Res & Dev Lab Inc Carbon photoelectric element and its manufacturing method
US7235912B2 (en) * 2002-03-08 2007-06-26 Chien-Min Sung Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof
US7169691B2 (en) * 2004-01-29 2007-01-30 Micron Technology, Inc. Method of fabricating wafer-level packaging with sidewall passivation and related apparatus
WO2008103948A1 (en) * 2007-02-22 2008-08-28 Nitto Denko Corporation Carbon-containing semiconducting devices and methods of making thereof

Also Published As

Publication number Publication date
US20100221850A1 (en) 2010-09-02
US20080277652A1 (en) 2008-11-13
US8030127B2 (en) 2011-10-04
WO2008103948A1 (en) 2008-08-28

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