WO2008100279A3 - Selective etching of mems using gaseous halides and reactive co-etchants - Google Patents

Selective etching of mems using gaseous halides and reactive co-etchants Download PDF

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Publication number
WO2008100279A3
WO2008100279A3 PCT/US2007/016353 US2007016353W WO2008100279A3 WO 2008100279 A3 WO2008100279 A3 WO 2008100279A3 US 2007016353 W US2007016353 W US 2007016353W WO 2008100279 A3 WO2008100279 A3 WO 2008100279A3
Authority
WO
WIPO (PCT)
Prior art keywords
etchant
mems
etchants
reactive
vapor phase
Prior art date
Application number
PCT/US2007/016353
Other languages
French (fr)
Other versions
WO2008100279A2 (en
Inventor
Xiaoming Yan
Brian Arbuckle
Evgeni Gousev
Ming-Hau Tung
Original Assignee
Qualcomm Mems Technologies Inc
Xiaoming Yan
Brian Arbuckle
Evgeni Gousev
Ming-Hau Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies Inc, Xiaoming Yan, Brian Arbuckle, Evgeni Gousev, Ming-Hau Tung filed Critical Qualcomm Mems Technologies Inc
Publication of WO2008100279A2 publication Critical patent/WO2008100279A2/en
Publication of WO2008100279A3 publication Critical patent/WO2008100279A3/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Abstract

A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100- times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
PCT/US2007/016353 2006-08-02 2007-07-18 Selective etching of mems using gaseous halides and reactive co-etchants WO2008100279A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/497,726 2006-08-02
US11/497,726 US7566664B2 (en) 2006-08-02 2006-08-02 Selective etching of MEMS using gaseous halides and reactive co-etchants

Publications (2)

Publication Number Publication Date
WO2008100279A2 WO2008100279A2 (en) 2008-08-21
WO2008100279A3 true WO2008100279A3 (en) 2009-01-22

Family

ID=39029691

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/016353 WO2008100279A2 (en) 2006-08-02 2007-07-18 Selective etching of mems using gaseous halides and reactive co-etchants

Country Status (3)

Country Link
US (1) US7566664B2 (en)
TW (1) TW200821259A (en)
WO (1) WO2008100279A2 (en)

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