WO2008086618A8 - Apparatus and method for cooling ions - Google Patents

Apparatus and method for cooling ions

Info

Publication number
WO2008086618A8
WO2008086618A8 PCT/CA2008/000094 CA2008000094W WO2008086618A8 WO 2008086618 A8 WO2008086618 A8 WO 2008086618A8 CA 2008000094 W CA2008000094 W CA 2008000094W WO 2008086618 A8 WO2008086618 A8 WO 2008086618A8
Authority
WO
WIPO (PCT)
Prior art keywords
sample
high pressure
ions
neutral particles
target surface
Prior art date
Application number
PCT/CA2008/000094
Other languages
French (fr)
Other versions
WO2008086618A1 (en
Inventor
Alexandre V Loboda
Original Assignee
Mds Analytical Tech Bu Mds Inc
Applera Corp
Alexandre V Loboda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mds Analytical Tech Bu Mds Inc, Applera Corp, Alexandre V Loboda filed Critical Mds Analytical Tech Bu Mds Inc
Priority to JP2009545773A priority Critical patent/JP5495373B2/en
Priority to EP08706242A priority patent/EP2126957A4/en
Priority to CA002673403A priority patent/CA2673403A1/en
Publication of WO2008086618A1 publication Critical patent/WO2008086618A1/en
Publication of WO2008086618A8 publication Critical patent/WO2008086618A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/04—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
    • H01J49/0468—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components with means for heating or cooling the sample
    • H01J49/0481—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components with means for heating or cooling the sample with means for collisional cooling

Abstract

An apparatus for secondary ion mass spectrometry is provided having a target surface for supporting a sample on the target surface and an ion source configured to direct a beam of primary ions toward the sample to sputter secondary ions and neutral particles from the sample, A first chamber having an inlet provides gas to maintain high pressure at the sample for cooling the secondary ions and neutral particles, the high pressure being in the range of about 10-3 to about 1000 Torr. A method of secondary ion mass spectrometry is provided having a target surface for supporting a sample, directing a beam of primary ions toward the sample to sputter secondary ions and neutral particles from the sample, and providing a high pressure at the sample for cooling the secondary ions and neutral particles, the high pressure being in the range of about 10-3 to about 1000 Torr.
PCT/CA2008/000094 2007-01-19 2008-01-18 Apparatus and method for cooling ions WO2008086618A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009545773A JP5495373B2 (en) 2007-01-19 2008-01-18 Apparatus and method for cooling ions
EP08706242A EP2126957A4 (en) 2007-01-19 2008-01-18 Apparatus and method for cooling ions
CA002673403A CA2673403A1 (en) 2007-01-19 2008-01-18 Apparatus and method for cooling ions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88578807P 2007-01-19 2007-01-19
US60/885,788 2007-01-19

Publications (2)

Publication Number Publication Date
WO2008086618A1 WO2008086618A1 (en) 2008-07-24
WO2008086618A8 true WO2008086618A8 (en) 2008-09-25

Family

ID=39635609

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2008/000094 WO2008086618A1 (en) 2007-01-19 2008-01-18 Apparatus and method for cooling ions

Country Status (5)

Country Link
US (1) US7910882B2 (en)
EP (1) EP2126957A4 (en)
JP (1) JP5495373B2 (en)
CA (1) CA2673403A1 (en)
WO (1) WO2008086618A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015085577A1 (en) * 2013-12-13 2015-06-18 中国科学院地质与地球物理研究所 System and method for analyzing gas sample using secondary ion mass spectrometer

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8384023B2 (en) * 2009-01-23 2013-02-26 Ionwerks, Inc. Post-ionization of neutrals for ion mobility oTOFMS identification of molecules and elements desorbed from surfaces
JP5854781B2 (en) * 2011-01-14 2016-02-09 キヤノン株式会社 Mass spectrometry method and apparatus
DE102012008259B4 (en) * 2012-04-25 2014-06-26 Bruker Daltonik Gmbh Ion generation in mass spectrometers by cluster bombardment
WO2014117271A1 (en) * 2013-01-31 2014-08-07 Smiths Detection Montreal Inc. Surface ionization source
GB201308505D0 (en) * 2013-05-13 2013-06-19 Ionoptika Ltd Use of a gas cluster ion beam containing hydrocarbon for sample analysis
GB201513167D0 (en) 2015-07-27 2015-09-09 Thermo Fisher Scient Bremen Elemental analysis of organic samples
JP7210536B2 (en) * 2017-04-03 2023-01-23 パーキンエルマー ヘルス サイエンス インコーポレイテッド Transfer of ions from an electron ionization source

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660655A (en) * 1969-09-08 1972-05-02 Ass Elect Ind Ion probe with means for mass analyzing neutral particles sputtered from a specimen
US3930155A (en) * 1973-01-19 1975-12-30 Hitachi Ltd Ion microprobe analyser
DE2950330C2 (en) * 1979-12-14 1983-06-01 Leybold-Heraeus GmbH, 5000 Köln Device for chemical analysis of samples
US4442354A (en) * 1982-01-22 1984-04-10 Atom Sciences, Inc. Sputter initiated resonance ionization spectrometry
JPS60135846A (en) * 1983-12-26 1985-07-19 Anelva Corp Secondary ion mass spectrometer
JPS6251144A (en) * 1985-08-29 1987-03-05 Hitachi Ltd Mass spectrometer
GB8626075D0 (en) * 1986-10-31 1986-12-03 Vg Instr Group Time-of-flight mass spectrometer
EP0304525A1 (en) * 1987-08-28 1989-03-01 FISONS plc Pulsed microfocused ion beams
DE3842825A1 (en) * 1988-01-08 1989-07-20 Krupp Gmbh METHOD AND DEVICE FOR PRODUCING FURFURAL
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
US5105082A (en) * 1990-04-09 1992-04-14 Nippon Telegraph & Telephone Corporation Laser ionization sputtered neutral mass spectrometer
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5763875A (en) * 1991-11-12 1998-06-09 Max Planck Gesellschaft Method and apparatus for quantitative, non-resonant photoionization of neutral particles
JP2642881B2 (en) * 1994-09-28 1997-08-20 東京大学長 Ultrasensitive hydrogen detection method using slow multiply charged ions
KR100217325B1 (en) * 1996-07-02 1999-10-01 윤종용 Fabricating process analyzing method for semiconductor device
US6008491A (en) * 1997-10-15 1999-12-28 The United States Of America As Represented By The United States Department Of Energy Time-of-flight SIMS/MSRI reflectron mass analyzer and method
US6331702B1 (en) * 1999-01-25 2001-12-18 University Of Manitoba Spectrometer provided with pulsed ion source and transmission device to damp ion motion and method of use
JP2000162164A (en) * 1998-11-26 2000-06-16 Hitachi Ltd Resonance laser ionized neutral particle mass spectrometer and spectrometry
JP2001057174A (en) * 1999-08-16 2001-02-27 Jeol Ltd Magnetic sector type mass spectometer
JP3725803B2 (en) * 2001-06-15 2005-12-14 株式会社東芝 Semiconductor wafer impurity measurement method and semiconductor wafer impurity measurement program
EP1430508A1 (en) * 2001-09-17 2004-06-23 MDS Inc., doing business as MDS Sciex Method and apparatus for cooling and focusing ions
US7635841B2 (en) * 2001-12-12 2009-12-22 Micromass Uk Limited Method of mass spectrometry
US6794641B2 (en) * 2002-05-30 2004-09-21 Micromass Uk Limited Mass spectrometer
US7071467B2 (en) * 2002-08-05 2006-07-04 Micromass Uk Limited Mass spectrometer
US7102126B2 (en) 2002-08-08 2006-09-05 Micromass Uk Limited Mass spectrometer
US6835928B2 (en) * 2002-09-04 2004-12-28 Micromass Uk Limited Mass spectrometer
US7459693B2 (en) * 2003-04-04 2008-12-02 Bruker Daltonics, Inc. Ion guide for mass spectrometers
WO2005001869A2 (en) * 2003-06-06 2005-01-06 Ionwerks Gold implantation/deposition of biological samples for laser desorption three dimensional depth profiling of tissues
JP4690641B2 (en) * 2003-07-28 2011-06-01 株式会社日立ハイテクノロジーズ Mass spectrometer
CA2542869A1 (en) * 2003-10-20 2005-05-12 Ionwerks, Inc. Ion mobility tof/maldi/ms using drift cell alternating high and low electrical field regions
US7482582B2 (en) * 2005-05-27 2009-01-27 Ionwerks, Inc. Multi-beam ion mobility time-of-flight mass spectrometry with multi-channel data recording
DE102005027937B3 (en) * 2005-06-16 2006-12-07 Ion-Tof Gmbh Method for analyzing a solid sample
EP1982349B1 (en) * 2006-02-07 2018-07-25 DH Technologies Development Pte. Ltd. Chemical noise reduction for mass spectrometry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015085577A1 (en) * 2013-12-13 2015-06-18 中国科学院地质与地球物理研究所 System and method for analyzing gas sample using secondary ion mass spectrometer

Also Published As

Publication number Publication date
JP2010517211A (en) 2010-05-20
CA2673403A1 (en) 2008-07-24
EP2126957A2 (en) 2009-12-02
WO2008086618A1 (en) 2008-07-24
EP2126957A4 (en) 2012-05-30
US7910882B2 (en) 2011-03-22
JP5495373B2 (en) 2014-05-21
US20080203286A1 (en) 2008-08-28

Similar Documents

Publication Publication Date Title
WO2008086618A8 (en) Apparatus and method for cooling ions
EP1577927A3 (en) Charged particle beam system
TW200602506A (en) Film forming apparatus and film forming method
WO2008089178A3 (en) Plasma source with liner for reducing metal contamination
MY151477A (en) Apparatus for an optimized plasma chamber grounded electrode assembly
WO2006115686A3 (en) Method for controlling space charge-driven ion instabilities in electron impact ion sources
WO2006019565A3 (en) Method and system for coating internal surfaces of prefabricated process piping in the field
TW200710960A (en) Tilted plasma doping
WO2011066508A3 (en) Chamber for processing hard disk drive substrates
EP1067578A3 (en) Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
CA2343735A1 (en) Means for removing unwanted ions from an ion transport system and mass spectrometer
TW200721299A (en) Plasma etching apparatus
WO2004001804A3 (en) Device for generation of reactive ions
WO2011119611A3 (en) Dielectric deposition using a remote plasma source
EP2261948A3 (en) Plasma discharge film-forming apparatus and method
WO2009089499A3 (en) Multibeam system
ATE539177T1 (en) DEVICE AND METHOD FOR SPUTTER COATING
WO2007059052A3 (en) Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
WO2008124407A3 (en) Method and apparatus for generation of reagent ions in a mass spectrometer
TW200641955A (en) High conductance ion source
GB0618110D0 (en) Mass spectrometer
WO2009028506A1 (en) Plasma processing apparatus, plasma processing method and end point detecting method
WO2007124879A3 (en) Homogeneous pvd coating device and method
WO2010144761A3 (en) Ionized physical vapor deposition for microstructure controlled thin film deposition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08706242

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2673403

Country of ref document: CA

ENP Entry into the national phase

Ref document number: 2009545773

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008706242

Country of ref document: EP