WO2008063761A3 - Method of packaging a device using a dielectric layer - Google Patents
Method of packaging a device using a dielectric layer Download PDFInfo
- Publication number
- WO2008063761A3 WO2008063761A3 PCT/US2007/080523 US2007080523W WO2008063761A3 WO 2008063761 A3 WO2008063761 A3 WO 2008063761A3 US 2007080523 W US2007080523 W US 2007080523W WO 2008063761 A3 WO2008063761 A3 WO 2008063761A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dielectric layer
- major surface
- packaging
- encapsulant
- sides
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09145—Edge details
- H05K2201/0919—Exposing inner circuit layers or metal planes at the side edge of the PCB or at the walls of large holes
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800395574A CN101530012B (en) | 2006-11-17 | 2007-10-05 | Method of packaging a device using a dielectric layer |
JP2009537256A JP2010510665A (en) | 2006-11-17 | 2007-10-05 | Method for packaging a device using a dielectric layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/561,241 US7476563B2 (en) | 2006-11-17 | 2006-11-17 | Method of packaging a device using a dielectric layer |
US11/561,241 | 2006-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008063761A2 WO2008063761A2 (en) | 2008-05-29 |
WO2008063761A3 true WO2008063761A3 (en) | 2008-08-14 |
Family
ID=39417421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/080523 WO2008063761A2 (en) | 2006-11-17 | 2007-10-05 | Method of packaging a device using a dielectric layer |
Country Status (5)
Country | Link |
---|---|
US (1) | US7476563B2 (en) |
JP (1) | JP2010510665A (en) |
CN (1) | CN101530012B (en) |
TW (1) | TWI415240B (en) |
WO (1) | WO2008063761A2 (en) |
Families Citing this family (45)
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US20100148357A1 (en) * | 2008-12-16 | 2010-06-17 | Freescale Semiconductor, Inc. | Method of packaging integrated circuit dies with thermal dissipation capability |
JP2010219489A (en) * | 2009-02-20 | 2010-09-30 | Toshiba Corp | Semiconductor device and manufacturing method thereof |
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TWI466259B (en) * | 2009-07-21 | 2014-12-21 | Advanced Semiconductor Eng | Semiconductor package, manufacturing method thereof and manufacturing method for chip-redistribution encapsulant |
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US8618652B2 (en) | 2010-04-16 | 2013-12-31 | Intel Corporation | Forming functionalized carrier structures with coreless packages |
US8939347B2 (en) | 2010-04-28 | 2015-01-27 | Intel Corporation | Magnetic intermetallic compound interconnect |
US9847308B2 (en) | 2010-04-28 | 2017-12-19 | Intel Corporation | Magnetic intermetallic compound interconnect |
US8313958B2 (en) | 2010-05-12 | 2012-11-20 | Intel Corporation | Magnetic microelectronic device attachment |
US8434668B2 (en) | 2010-05-12 | 2013-05-07 | Intel Corporation | Magnetic attachment structure |
US8609532B2 (en) | 2010-05-26 | 2013-12-17 | Intel Corporation | Magnetically sintered conductive via |
US20120001339A1 (en) | 2010-06-30 | 2012-01-05 | Pramod Malatkar | Bumpless build-up layer package design with an interposer |
US8372666B2 (en) | 2010-07-06 | 2013-02-12 | Intel Corporation | Misalignment correction for embedded microelectronic die applications |
US8754516B2 (en) | 2010-08-26 | 2014-06-17 | Intel Corporation | Bumpless build-up layer package with pre-stacked microelectronic devices |
US8304913B2 (en) | 2010-09-24 | 2012-11-06 | Intel Corporation | Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby |
US8941222B2 (en) | 2010-11-11 | 2015-01-27 | Advanced Semiconductor Engineering Inc. | Wafer level semiconductor package and manufacturing methods thereof |
US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
US8937382B2 (en) | 2011-06-27 | 2015-01-20 | Intel Corporation | Secondary device integration into coreless microelectronic device packages |
US8848380B2 (en) | 2011-06-30 | 2014-09-30 | Intel Corporation | Bumpless build-up layer package warpage reduction |
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Also Published As
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JP2010510665A (en) | 2010-04-02 |
CN101530012B (en) | 2012-07-04 |
US7476563B2 (en) | 2009-01-13 |
WO2008063761A2 (en) | 2008-05-29 |
TW200832665A (en) | 2008-08-01 |
US20080119013A1 (en) | 2008-05-22 |
CN101530012A (en) | 2009-09-09 |
TWI415240B (en) | 2013-11-11 |
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