WO2008042351B1 - Led system and method - Google Patents

Led system and method

Info

Publication number
WO2008042351B1
WO2008042351B1 PCT/US2007/021117 US2007021117W WO2008042351B1 WO 2008042351 B1 WO2008042351 B1 WO 2008042351B1 US 2007021117 W US2007021117 W US 2007021117W WO 2008042351 B1 WO2008042351 B1 WO 2008042351B1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
exit face
led
shaped
interface
Prior art date
Application number
PCT/US2007/021117
Other languages
French (fr)
Other versions
WO2008042351A3 (en
WO2008042351A2 (en
Inventor
Dung T Duong
Paul N Winberg
Matthew R Thomas
Elliot M Pickering
Original Assignee
Illumitex Inc
Dung T Duong
Paul N Winberg
Matthew R Thomas
Elliot M Pickering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Illumitex Inc, Dung T Duong, Paul N Winberg, Matthew R Thomas, Elliot M Pickering filed Critical Illumitex Inc
Priority to EP07839119A priority Critical patent/EP2070123A2/en
Priority to JP2009531411A priority patent/JP2010506402A/en
Priority to CN2007800428883A priority patent/CN101553928B/en
Publication of WO2008042351A2 publication Critical patent/WO2008042351A2/en
Publication of WO2008042351A3 publication Critical patent/WO2008042351A3/en
Publication of WO2008042351B1 publication Critical patent/WO2008042351B1/en
Priority to HK10103404.2A priority patent/HK1138431A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Embodiments provide an LED comprising a quantum well region operable to generate light and a substrate having an interface with the quantum well region, wherein light generated by the quantum well region traverses the interface to enter the substrate and exit the LED through an exit face of the substrate. The exit face may be opposite from and a distance from the interface, with some portion or all of this LED being shaped to optimize the light extraction efficiency of the device. The exit face can have at least 70% of a minimum area necessary to conserve brightness for a desired half-angle of light. Sidewalls of the LED may be positioned and shaped so that rays incident on a sidewall reflect to the exit face with an angle of incidence at the exit face at less than or equal to a critical angle at the exit face.

Claims

69
AMENDED CLAIMS received bythe International Bureau on 23 May 2008 (23.05.08)
1. An LED comprising: a quantum well region operable to generate light; and a shaped substrate having an interface with the quantum well region, wherein light generated by the quantum well region traverses the interface, the shaped substrate comprising: an exit face opposite from and a distance from the interface, wherein the substrate is shaped so that a portion of the light entering the shaped substrate through the interface will exit the shaped substrate through the exit face and wherein the exit face has at least 70% of a minimum area necessary to conserve radiance for a desired half-angle of light projected from the shaped substrate; and a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to the exit face with an angle of incidence at the exit face a-fe that is less than or equal to a critical angle at the exit face to enable at least 70% of light entering the substrate to be extracted through the exit face.
2. The LED of Claim 1, wherein the quantum well region is shaped in conformance with the substrate.
3. The LED of Claim 1, wherein the exit face has at least the minimum area necessary to conserve radiance.
4. The LED of Claim 1, wherein the interface is rectangular in shape and wherein the minimum area necessary to conserve radiance is determined using an effective solid angle that accounts for the shape of the interface. 70
an exit face opposite from and a distance from the interface, wherein the substrate is shaped so that a portion of the light entering the shaped substrate through the interface will exit the shaped substrate through the exit face and wherein the exit face has at least 70% of a minimum area necessary to conserve radiance for a desired solid angle of light projected from^ the shaped substrate; a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to the exit face with an angle of incidence at the exit face that is less than or equal to a critical angle at the exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted through the exit face; wherein the area of the exit face, distance and sidewall shapes are selected to project light with a half angle of between 10 to 60 degrees.
11. The LED of Claim 10, wherein the interface is rectangular in shape and wherein the minimum area necessary to conserve radiance is determined using an effective solid angle that accounts for the shape of the interface.
12. The LED of Claim 10, wherein the distance is within 50% of a minimum distance so that all rays with a straight transmission path from the interface to the exit face have an angle of incidence that is less than or equal to the critical angle at the exit face.
13. The LED of Claim 10, wherein each sidewall is positioned and shaped so that at least 80% of rays with a straight transmission path from the interface to the sidewall 71
the substrate is shaped so that a portion of the light entering the shaped substrate through the interface will exit the shaped substrate through the exit face; the exit face has an area that is within 30% of a
minimum area defined by wherein Φi is the light flux
Figure imgf000005_0001
traversing the interface; Φ2 is the light flux exiting the exit face and is equal to Φx; Ωi is the effective solid angle whereby light traverses the interface and Ω2 is the effective solid angle whereby light leaves the exit face; Ai is the area of the interface; rii is the refractive index of the shaped substrate and n2 is the refractive index of the medium external to the shaped substrate; the distance is at least a minimum distance so that all rays with a straight transmission path from the interface to the exit face have an angle of incidence that is less than or equal to a critical angle at the exit face; and a set of sidewalls, wherein each sidewall is positioned and shaped so that at least a portion—of rays having a straight transmission path from the interface to that sidewall reflect to the exit face with an angle of incidence at the exit face that is less than or equal to the critical angle at the exit face.
20. The LED of Claim 19, wherein the area of the exit face, distance and sidewall shapes are selected to project light with a half angle of between 10 to 60 degrees with at least efficiency and a desired light output profile. 72
21. The LED of Claim 19, wherein the quantum well region is shaped in conformance with the substrate.
22. The LED of Claim 19, wherein the interface has a rectangular shape and wherein the effective solid angle whereby light leaves the exit surface is determined to account for the square shape of the interface.
23. The LED of Claim 19, further comprising a layer of photo-luminescent material capable of emitting desired wavelengths to create white light.
24. The LED of Claim 19, wherein the shapes of the sidewall are selected to create a desired light output profile.
25. An LED comprising: a quantum well region operable to generate light; and a shaped substrate having an interface with the quantum well region, wherein light generated by the quantum well region traverses the interface, the shaped substrate comprising: at least two exit faces, wherein the substrate is shaped so that a portion of the light entering the shaped substrate through the interface will exit the shaped substrate through the at least two exit faces and wherein the at least two exit faces have a combined area that is at least 70% of a minimum area necessary to conserve radiance; and a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to an exit face of the two or more exit faces 73
with an angle of incidence at that exit face -at that is less than or equal to a critical angle at that exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted through the at least two exit faces.
26. A method of manufacturing an LED comprising: determining a size of an exit face of a shaped substrate portion of the LED that has at least 70% of a minimum area necessary to conserve radiance for a desired half-angle of light projected from the LED; determining a distance between the exit face and an interface between the shaped substrate portion and a quantum well region of the LED; determining shapes and positions of a set of sidewalls of the shaped substrate portion of the LED so that each sidewall is positioned and shaped to cause a sufficient percentage of rays having a straight transmission path from the interface to that sidewall to reflect to the exit face with an angle of incidence at the exit face a% that is less than or equal to a critical angle at the exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted through the exit face; and forming the substrate portion of the LED in accordance with the determined size of the exit face, shapes and positions of the set of sidewalls and distance between the exit face and the interface .
27. The method of Claim 26, depositing one or more layers on the shaped substrate portion to form the quantum well region of the LED after the shaped substrate portion has been formed.
28. The method of Claim 26, further comprising: providing a substrate and one or more layers for a quantum well region of the LED; 74
36. A method of shaping an LED comprising: providing a wafer comprising a substrate and one or more layers for a quantum well region of the LED; grinding the substrate to form a shaped substrate portion of the LED; wherein the shaped substrate portion is shaped to comprise: an exit face opposite from and a distance from an interface with the quantum well region of the LED, the exit face having at least 70% of a minimum area necessary to conserve radiance for a desired half-angle of light projected from the shaped substrate; and a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to the exit face with an angle of incidence at the exit face of less than or equal to a critical angle at the exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted at the exit face.
37. The method of Claim 36, wherein grinding the substrate comprises grinding the substrate with a shaped diamond grinding wheel .
38. The method of Claim 36, wherein grinding the substrate comprises : making multiple cuts in the substrate along a first axis at least part way through the substrate; and making multiple cuts in the substrate along a second axis at an angle to the first axis at least part way through the substrate to create shaped substrate portions for multiple LEDs .
39. The method of Claim 36, further comprising shaping the quantum well region of the LED in conjunction with shaping the substrate.
40. The method of Claim 36, wherein the LED is shaped to achieve a desired light output profile.
41. The method of Claim 36, wherein the exit face has the minimum area necessary to conserve radiance.
42. A method of shaping an LED comprising: providing a wafer comprising a substrate and one or more layers for a quantum well region of the LED; etching the substrate to form a shaped substrate portion of the LED; wherein the shaped substrate portion is shaped to comprise: an exit face opposite from and a distance from and interface with the quantum well region of the LED, the exit face having at least 70% of a minimum area necessary to conserve radiance for a desired half-angle of light projected from the shaped substrate; and a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to the exit face with an angle of incidence at the exit face of less than or equal to a critical angle at the exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted through the exit face.
43. The method of Claim 42, wherein etching the substrate further comprises dry etching the substrate. 76
44. The method of Claim 42, wherein etching the substrate further comprises wet etching the substrate.
45. The method of Claim 42, wherein etching the substrate further comprises etching the substrate using a multiple etch resist etching process.
46. The method of Claim 42, further comprising shaping the quantum well region of the LED in conjunction with shaping the substrate .
47. The method of Claim 42, wherein the LED is shaped to achieve a desired light output profile.
48. The method of Claim 42, wherein the exit face is shaped to have at least the minimum area necessary to conserve radiance.
49. A method of manufacturing an LED comprising: providing a substrate and one or more layers for a quantum well region of the LED; removing material from the substrate to form a shaped substrate portion of the LED, the shaped substrate portion comprising: two or more exit faces having a combined area that is at least 70% of a minimum area necessary to conserve radiance for a desired half-angle of light projected from the LED; and a set of sidewalls, wherein each sidewall is positioned and shaped so that a sufficient percentage of rays having a straight transmission path from the interface to that sidewall reflect to an exit face of the two or more exit faces with an angle of incidence at that exit face that is less than 77
than or equal to a critical angle at that exit face to enable at least 70% of the light entering the substrate from the quantum well region to be extracted through the two or more exit faces.
50. The method of Claim 49, wherein the two or more exit faces have an area that is at least the minimum area necessary to conserve radiance.
PCT/US2007/021117 2006-10-02 2007-10-01 Led system and method WO2008042351A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07839119A EP2070123A2 (en) 2006-10-02 2007-10-01 Led system and method
JP2009531411A JP2010506402A (en) 2006-10-02 2007-10-01 LED system and method
CN2007800428883A CN101553928B (en) 2006-10-02 2007-10-01 Led system and method
HK10103404.2A HK1138431A1 (en) 2006-10-02 2010-04-07 Led system and method led

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US82781806P 2006-10-02 2006-10-02
US60/827,818 2006-10-02
US88178507P 2007-01-22 2007-01-22
US60/881,785 2007-01-22

Publications (3)

Publication Number Publication Date
WO2008042351A2 WO2008042351A2 (en) 2008-04-10
WO2008042351A3 WO2008042351A3 (en) 2008-06-19
WO2008042351B1 true WO2008042351B1 (en) 2008-08-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (8)

Country Link
US (2) US7789531B2 (en)
EP (1) EP2070123A2 (en)
JP (1) JP2010506402A (en)
KR (1) KR20090064474A (en)
CN (1) CN101553928B (en)
HK (1) HK1138431A1 (en)
TW (1) TW200824161A (en)
WO (1) WO2008042351A2 (en)

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US20080080166A1 (en) 2008-04-03
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