WO2008042351B1 - Led system and method - Google Patents
Led system and methodInfo
- Publication number
- WO2008042351B1 WO2008042351B1 PCT/US2007/021117 US2007021117W WO2008042351B1 WO 2008042351 B1 WO2008042351 B1 WO 2008042351B1 US 2007021117 W US2007021117 W US 2007021117W WO 2008042351 B1 WO2008042351 B1 WO 2008042351B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- exit face
- led
- shaped
- interface
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07839119A EP2070123A2 (en) | 2006-10-02 | 2007-10-01 | Led system and method |
JP2009531411A JP2010506402A (en) | 2006-10-02 | 2007-10-01 | LED system and method |
CN2007800428883A CN101553928B (en) | 2006-10-02 | 2007-10-01 | Led system and method |
HK10103404.2A HK1138431A1 (en) | 2006-10-02 | 2010-04-07 | Led system and method led |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82781806P | 2006-10-02 | 2006-10-02 | |
US60/827,818 | 2006-10-02 | ||
US88178507P | 2007-01-22 | 2007-01-22 | |
US60/881,785 | 2007-01-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2008042351A2 WO2008042351A2 (en) | 2008-04-10 |
WO2008042351A3 WO2008042351A3 (en) | 2008-06-19 |
WO2008042351B1 true WO2008042351B1 (en) | 2008-08-07 |
Family
ID=39269018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/021117 WO2008042351A2 (en) | 2006-10-02 | 2007-10-01 | Led system and method |
Country Status (8)
Country | Link |
---|---|
US (2) | US7789531B2 (en) |
EP (1) | EP2070123A2 (en) |
JP (1) | JP2010506402A (en) |
KR (1) | KR20090064474A (en) |
CN (1) | CN101553928B (en) |
HK (1) | HK1138431A1 (en) |
TW (1) | TW200824161A (en) |
WO (1) | WO2008042351A2 (en) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
KR100653070B1 (en) * | 2005-09-05 | 2006-12-01 | 삼성전자주식회사 | Liquid crystal display |
EP1974389A4 (en) | 2006-01-05 | 2010-12-29 | Illumitex Inc | Separate optical device for directing light from an led |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US7789531B2 (en) * | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
US8791631B2 (en) | 2007-07-19 | 2014-07-29 | Quarkstar Llc | Light emitting device |
CN101118178B (en) * | 2007-09-06 | 2010-09-29 | 复旦大学 | LED light flux testing method |
WO2009100358A1 (en) | 2008-02-08 | 2009-08-13 | Illumitex, Inc. | System and method for emitter layer shaping |
TW201007993A (en) * | 2008-06-26 | 2010-02-16 | Illumitex Inc | Optical device shaping |
US20100066941A1 (en) * | 2008-09-16 | 2010-03-18 | Illumitex, Inc. | Hybrid lighting panel and lcd system |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US20100201611A1 (en) * | 2008-12-23 | 2010-08-12 | Illumitex, Inc. | Led displays |
TW201113476A (en) * | 2009-07-29 | 2011-04-16 | Illumitex Inc | Orthogonally separable light bar |
TW201126114A (en) * | 2009-08-20 | 2011-08-01 | Illumitex Inc | System and method for a phosphor coated lens |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8414151B2 (en) | 2009-10-02 | 2013-04-09 | GE Lighting Solutions, LLC | Light emitting diode (LED) based lamp |
US9103507B2 (en) * | 2009-10-02 | 2015-08-11 | GE Lighting Solutions, LLC | LED lamp with uniform omnidirectional light intensity output |
US8593040B2 (en) * | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
EP2587113B1 (en) * | 2010-06-25 | 2016-12-14 | Opto Design, Inc. | Illumination device |
DE102011080247B4 (en) | 2011-08-02 | 2019-06-27 | Osram Gmbh | Luminaire with a reflector device |
EP2742540B1 (en) | 2011-08-08 | 2016-04-20 | Quarkstar, LLC | Illumination devices including multiple light emitting elements |
US9081125B2 (en) | 2011-08-08 | 2015-07-14 | Quarkstar Llc | Illumination devices including multiple light emitting elements |
US20130099263A1 (en) * | 2011-10-20 | 2013-04-25 | Gregory Lee Heacock | Full spectrum led light source |
US20130120986A1 (en) | 2011-11-12 | 2013-05-16 | Raydex Technology, Inc. | High efficiency directional light source with concentrated light output |
CN106931333B (en) | 2011-11-23 | 2020-11-27 | 夸克星有限责任公司 | Light emitting device |
US9052414B2 (en) | 2012-02-07 | 2015-06-09 | Microsoft Technology Licensing, Llc | Virtual image device |
TW201334218A (en) * | 2012-02-14 | 2013-08-16 | Lextar Electronics Corp | Light emitting semiconductor patterned substrate and manufacturing thereof |
US9870066B2 (en) | 2012-03-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Method of manufacturing an input device |
US9158383B2 (en) | 2012-03-02 | 2015-10-13 | Microsoft Technology Licensing, Llc | Force concentrator |
US9064654B2 (en) | 2012-03-02 | 2015-06-23 | Microsoft Technology Licensing, Llc | Method of manufacturing an input device |
US9426905B2 (en) | 2012-03-02 | 2016-08-23 | Microsoft Technology Licensing, Llc | Connection device for computing devices |
US9075566B2 (en) | 2012-03-02 | 2015-07-07 | Microsoft Technoogy Licensing, LLC | Flexible hinge spine |
US9360893B2 (en) | 2012-03-02 | 2016-06-07 | Microsoft Technology Licensing, Llc | Input device writing surface |
USRE48963E1 (en) | 2012-03-02 | 2022-03-08 | Microsoft Technology Licensing, Llc | Connection device for computing devices |
EP2827048B1 (en) * | 2012-03-15 | 2020-04-22 | Koito Manufacturing Co., Ltd. | Automotive lamp |
JP5900131B2 (en) * | 2012-04-24 | 2016-04-06 | 豊田合成株式会社 | Light emitting device |
US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
US20130300590A1 (en) | 2012-05-14 | 2013-11-14 | Paul Henry Dietz | Audio Feedback |
US10031556B2 (en) | 2012-06-08 | 2018-07-24 | Microsoft Technology Licensing, Llc | User experience adaptation |
US9019615B2 (en) | 2012-06-12 | 2015-04-28 | Microsoft Technology Licensing, Llc | Wide field-of-view virtual image projector |
US9355345B2 (en) | 2012-07-23 | 2016-05-31 | Microsoft Technology Licensing, Llc | Transparent tags with encoded data |
WO2014043384A1 (en) * | 2012-09-13 | 2014-03-20 | Quarkstar Llc | Light-emitting device with remote scattering element and total internal reflection extractor element |
US9915410B2 (en) | 2012-09-13 | 2018-03-13 | Quarkstar Llc | Light-emitting devices with reflective elements |
US9746173B2 (en) | 2012-09-13 | 2017-08-29 | Quarkstar Llc | Illumination devices including enclosure panels with luminaire modules |
US10151446B2 (en) | 2012-09-13 | 2018-12-11 | Quarkstar Llc | Light-emitting device with total internal reflection (TIR) extractor |
US9846272B2 (en) | 2012-09-13 | 2017-12-19 | Quarkstar Llc | Illumination systems providing direct and indirect illumination |
CN103672576B (en) * | 2012-09-13 | 2015-12-09 | 大连工业大学 | A kind of optical system of Modular LED street lamp |
EP2898260A4 (en) * | 2012-09-18 | 2016-04-27 | Wavien Inc | Lamp system having parabolic reflector with two reflections for recycling light |
US9152173B2 (en) | 2012-10-09 | 2015-10-06 | Microsoft Technology Licensing, Llc | Transparent display device |
US9513748B2 (en) | 2012-12-13 | 2016-12-06 | Microsoft Technology Licensing, Llc | Combined display panel circuit |
EP2864694B1 (en) | 2013-02-08 | 2016-01-20 | Quarkstar LLC | Illumination device providing direct and indirect illumination |
US20140233237A1 (en) * | 2013-02-21 | 2014-08-21 | Microsoft Corporation | Light concentrator assembly |
US9638835B2 (en) | 2013-03-05 | 2017-05-02 | Microsoft Technology Licensing, Llc | Asymmetric aberration correcting lens |
US9683710B2 (en) | 2013-03-07 | 2017-06-20 | Quarkstar Llc | Illumination device with multi-color light-emitting elements |
US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
WO2014144706A2 (en) | 2013-03-15 | 2014-09-18 | Quarkstar Llc | Color tuning of light-emitting devices |
CN105378950A (en) * | 2013-04-11 | 2016-03-02 | 皇家飞利浦有限公司 | Top emitting semiconductor light emitting device |
US9410680B2 (en) | 2013-04-19 | 2016-08-09 | Quarkstar Llc | Illumination devices with adjustable optical elements |
EP3273145B1 (en) | 2013-07-18 | 2019-09-04 | Quarkstar LLC | Luminaire module with multiple light guide elements |
WO2015038971A1 (en) * | 2013-09-12 | 2015-03-19 | Quarkstar Llc | Light-emitting device with total internal reflection (tir) extractor |
EP3063466B1 (en) | 2013-09-17 | 2022-01-05 | Quarkstar LLC | Illumination device for direct-indirect illumination |
TWI497040B (en) * | 2014-04-11 | 2015-08-21 | Ind Tech Res Inst | Detecting device |
US20160013363A1 (en) | 2014-07-08 | 2016-01-14 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
US9424048B2 (en) | 2014-09-15 | 2016-08-23 | Microsoft Technology Licensing, Llc | Inductive peripheral retention device |
JP6489831B2 (en) * | 2015-01-07 | 2019-03-27 | スタンレー電気株式会社 | Wavelength converter, method for manufacturing the same, and illumination device using the wavelength converter |
US10646142B2 (en) * | 2015-06-29 | 2020-05-12 | Eccrine Systems, Inc. | Smart sweat stimulation and sensing devices |
JP2019519803A (en) | 2016-04-26 | 2019-07-11 | ルミレッズ リミテッド ライアビリティ カンパニー | LED flash ring surrounding the camera lens |
US10288983B2 (en) * | 2016-04-26 | 2019-05-14 | Lumileds Llc | LED flash ring surrounding camera lens |
US10168516B2 (en) * | 2016-07-28 | 2019-01-01 | LumenFlow Corp. | Tractrix-based optical device for use with illumination sources in optical systems |
US10303211B2 (en) * | 2017-02-01 | 2019-05-28 | Facebook Technologies, Llc | Two part cone display using flexible substrates |
US10409080B2 (en) * | 2017-02-01 | 2019-09-10 | Facebook Technologies, Llc | Spherical display using flexible substrates |
US11184967B2 (en) | 2018-05-07 | 2021-11-23 | Zane Coleman | Angularly varying light emitting device with an imager |
US10816939B1 (en) | 2018-05-07 | 2020-10-27 | Zane Coleman | Method of illuminating an environment using an angularly varying light emitting device and an imager |
US10754075B1 (en) * | 2019-04-09 | 2020-08-25 | Signify Holding B.V. | Light assembly having a ring-shaped lightguide with a plurality of light incident portions |
EP3786518A1 (en) * | 2019-08-27 | 2021-03-03 | Seoul Semiconductor Europe GmbH | Illumination device |
Family Cites Families (493)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1670837A (en) | 1924-01-31 | 1928-05-22 | Gen Motors Corp | Head-lamp reflector |
US3981023A (en) | 1974-09-16 | 1976-09-14 | Northern Electric Company Limited | Integral lens light emitting diode |
US3988633A (en) | 1975-01-30 | 1976-10-26 | Duro-Test Corporation | Fluorescent lamp with envelope grooves |
US4125890A (en) | 1976-12-10 | 1978-11-14 | Corning Glass Works | Parabolic reflector including filament locating means |
US4180755A (en) | 1976-12-10 | 1979-12-25 | Corning Glass Works | Sealed beam lamp including filament locating means |
US4239369A (en) | 1978-11-20 | 1980-12-16 | Gte Products Corporation | Camera and reflector having offset optical and mechanical axes |
US4728999A (en) * | 1980-06-25 | 1988-03-01 | Pitney Bowes Inc. | Light emitting diode assembly |
US4304479A (en) | 1980-07-28 | 1981-12-08 | Polaroid Corporation | Photographic lighting apparatus |
US4388633A (en) * | 1980-09-29 | 1983-06-14 | Hughes Aircraft Company | Monolithic transistor coupled electroluminescent diode |
US4439910A (en) * | 1980-09-29 | 1984-04-03 | Hughes Aircraft Company | Process for fabrication of monolithic transistor coupled electroluminescent diode |
US4501637A (en) * | 1981-06-12 | 1985-02-26 | Motorola, Inc. | LED having self-aligned lens |
JPS5896785A (en) | 1981-12-04 | 1983-06-08 | Stanley Electric Co Ltd | Formation of synthetic resin lens for light-emitting diode |
DE3532821A1 (en) | 1985-09-13 | 1987-03-26 | Siemens Ag | LIGHT-EMITTING DIODE (LED) WITH SPHERICAL LENS |
US4716507A (en) | 1986-05-12 | 1987-12-29 | The United States Of America As Represented By The Secretary Of The Army | Optical collimator target illumination |
US5218216A (en) | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
US4799136A (en) * | 1987-05-29 | 1989-01-17 | Guth Lighting Systems, Inc. | Lighting fixture having concave shaped reflector and improved asymmetric light reflection system |
US5114513A (en) * | 1988-10-27 | 1992-05-19 | Omron Tateisi Electronics Co. | Optical device and manufacturing method thereof |
US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5036339A (en) | 1989-09-05 | 1991-07-30 | Eastman Kodak Company | LED array into floating focusing structure for differential expansion |
GB8923122D0 (en) * | 1989-10-13 | 1989-11-29 | Bastable Rodney C | Light fittings |
US5278433A (en) | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
US5281830A (en) | 1990-10-27 | 1994-01-25 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US5151718A (en) | 1990-12-31 | 1992-09-29 | Texas Instruments Incorporated | System and method for solid state illumination for dmd devices |
US5126929A (en) | 1991-01-09 | 1992-06-30 | R & D Molded Products, Inc. | LED holder with lens |
JP2655452B2 (en) | 1991-02-21 | 1997-09-17 | 日本電気株式会社 | Diffusion lens for light emitting diode |
JP2786952B2 (en) | 1991-02-27 | 1998-08-13 | 株式会社豊田中央研究所 | Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same |
US5174649B1 (en) | 1991-07-17 | 1998-04-14 | Precision Solar Controls Inc | Led lamp including refractive lens element |
JP2666228B2 (en) | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
US5233204A (en) | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
US6002829A (en) * | 1992-03-23 | 1999-12-14 | Minnesota Mining And Manufacturing Company | Luminaire device |
US5528720A (en) * | 1992-03-23 | 1996-06-18 | Minnesota Mining And Manufacturing Co. | Tapered multilayer luminaire devices |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
KR100286699B1 (en) | 1993-01-28 | 2001-04-16 | 오가와 에이지 | Gallium Nitride Group 3-5 Compound Semiconductor Light-Emitting Device and Manufacturing Method Thereof |
US6093941A (en) * | 1993-09-09 | 2000-07-25 | The United States Of America As Represented By The Secretary Of The Navy | Photonic silicon on a transparent substrate |
US5846844A (en) | 1993-11-29 | 1998-12-08 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor substrates using ZnO release layers |
JPH07202265A (en) | 1993-12-27 | 1995-08-04 | Toyoda Gosei Co Ltd | Manufacture of group iii nitride semiconductor |
JP3412224B2 (en) | 1994-01-07 | 2003-06-03 | 住友電気工業株式会社 | Lens mounting method and device |
JPH07263748A (en) | 1994-03-22 | 1995-10-13 | Toyoda Gosei Co Ltd | Iii group nitride semiconductor light emitting element and manufacture of it |
JP2698796B2 (en) | 1994-04-20 | 1998-01-19 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
JP3717196B2 (en) | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | Light emitting element |
JPH0832112A (en) | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
WO1996007051A1 (en) | 1994-08-29 | 1996-03-07 | Philips Electronics N.V. | Electric reflector lamp |
US5544268A (en) | 1994-09-09 | 1996-08-06 | Deacon Research | Display panel with electrically-controlled waveguide-routing |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5654831A (en) | 1995-01-04 | 1997-08-05 | Hughes Electronics | Refractive ellipsoid optical surface without spherical aberration |
US5523591A (en) * | 1995-01-25 | 1996-06-04 | Eastman Kodak Company | Assembly of led array and lens with engineered light output profile and method for making the assembly |
DE69637304T2 (en) | 1995-03-17 | 2008-08-07 | Toyoda Gosei Co., Ltd. | A semiconductor light-emitting device consisting of a III-V nitride compound |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5790583A (en) * | 1995-05-25 | 1998-08-04 | Northwestern University | Photonic-well Microcavity light emitting devices |
JP3620926B2 (en) | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | P-conducting group III nitride semiconductor electrode, electrode forming method and device |
US5780867A (en) | 1996-03-07 | 1998-07-14 | Sandia Corporation | Broadband light-emitting diode |
CH691045A5 (en) | 1996-04-16 | 2001-04-12 | Hct Shaping Systems Sa | A method for the orientation of several crystalline parts placed side by side on a cutting support for a simultaneous cutting in a cutting machine and device for |
JP3209096B2 (en) | 1996-05-21 | 2001-09-17 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
DE59711671D1 (en) | 1996-06-26 | 2004-07-01 | Osram Opto Semiconductors Gmbh | LIGHT EMITTING SEMICONDUCTOR COMPONENT WITH LUMINESCENT CONVERSION ELEMENT |
US6177761B1 (en) * | 1996-07-17 | 2001-01-23 | Teledyne Lighting And Display Products, Inc. | LED with light extractor |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JPH1065215A (en) | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | Iii nitride semiconductor light-emitting device |
WO1998019201A1 (en) | 1996-10-29 | 1998-05-07 | Xeotron Corporation | Optical device utilizing optical waveguides and mechanical light-switches |
CA2280739C (en) | 1997-02-13 | 2005-12-06 | Alliedsignal Inc. | Illumination system with light recycling to enhance brightness |
CN1292458C (en) | 1997-04-11 | 2006-12-27 | 日亚化学工业株式会社 | Nitride semiconductor growth method, nitride semiconductor substrate and device |
CA2283804C (en) | 1997-04-28 | 2007-01-09 | Osram Sylvania Inc. | Vehicle lamps with glare control |
EP0985235B1 (en) | 1997-05-27 | 2003-10-08 | Osram Opto Semiconductors GmbH | Method for producing a light-emitting component |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
DE69835216T2 (en) | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | SEMICONDUCTOR DEVICE OF A NITRIDE CONNECTION |
EP1004145B1 (en) | 1997-07-29 | 2005-06-01 | Osram Opto Semiconductors GmbH | Optoelectronic component |
CN1129192C (en) | 1997-08-29 | 2003-11-26 | 克里公司 | Robust group III nitride light emitting diode for high reliability in standard applications |
US6825501B2 (en) | 1997-08-29 | 2004-11-30 | Cree, Inc. | Robust Group III light emitting diode for high reliability in standard packaging applications |
US7075610B2 (en) | 1997-09-16 | 2006-07-11 | Michael Scalora | Liquid crystal display device and light emitting structure with photonic band gap transparent electrode structures |
US20030077654A1 (en) | 1997-09-17 | 2003-04-24 | Genentech, Inc. | Secreted and transmembrane polypeptides and nucleic acids encoding the same |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
EP0926744B8 (en) | 1997-12-15 | 2008-05-21 | Philips Lumileds Lighting Company, LLC. | Light emitting device |
US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
US6078064A (en) | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
US6936859B1 (en) | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
US6657300B2 (en) | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
US6194742B1 (en) | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
EP1029198A4 (en) | 1998-06-08 | 2000-12-27 | Karlheinz Strobl | Efficient light engine systems, components and methods of manufacture |
DE19829197C2 (en) | 1998-06-30 | 2002-06-20 | Siemens Ag | Component emitting and / or receiving radiation |
US6377535B1 (en) | 1998-07-06 | 2002-04-23 | Read-Rite Corporation | High numerical aperture optical focusing device having a conical incident facet and a parabolic reflector for use in data storage systems |
US6229782B1 (en) * | 1998-07-06 | 2001-05-08 | Read-Rite Corporation | High numerical aperture optical focusing device for use in data storage systems |
JP3785820B2 (en) | 1998-08-03 | 2006-06-14 | 豊田合成株式会社 | Light emitting device |
US6005722A (en) | 1998-09-04 | 1999-12-21 | Hewlett-Packard Company | Optical display system including a light valve |
US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
US6291839B1 (en) | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
US6608330B1 (en) | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
KR100305572B1 (en) | 1998-12-02 | 2001-11-22 | 이형도 | Light emitting diodes and manufacturing method |
JP4154780B2 (en) * | 1998-12-18 | 2008-09-24 | ソニー株式会社 | Projection lighting device |
US6331450B1 (en) | 1998-12-22 | 2001-12-18 | Toyoda Gosei Co., Ltd. | Method of manufacturing semiconductor device using group III nitride compound |
US6273589B1 (en) | 1999-01-29 | 2001-08-14 | Agilent Technologies, Inc. | Solid state illumination source utilizing dichroic reflectors |
JP4296644B2 (en) | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | Light emitting diode |
US6364487B1 (en) * | 1999-01-29 | 2002-04-02 | Agilent Technologies, Inc. | Solid state based illumination source for a projection display |
US20010042866A1 (en) | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US6351069B1 (en) | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6680569B2 (en) | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
US6502956B1 (en) * | 1999-03-25 | 2003-01-07 | Leotek Electronics Corporation | Light emitting diode lamp with individual LED lenses |
US6838705B1 (en) | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
JP3567790B2 (en) | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
JP3656456B2 (en) | 1999-04-21 | 2005-06-08 | 日亜化学工業株式会社 | Nitride semiconductor device |
DE19918370B4 (en) | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED white light source with lens |
US6257737B1 (en) * | 1999-05-20 | 2001-07-10 | Philips Electronics Na | Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs |
US6222207B1 (en) | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6287947B1 (en) | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
US6185051B1 (en) | 1999-06-23 | 2001-02-06 | Read-Rite Corporation | High numerical aperture optical focusing device for use in data storage systems |
HU228953B1 (en) | 1999-07-23 | 2013-07-29 | Osram Opto Semiconductors Gmbh | Luminous substance for a light source and light source associated therewith |
CN100334746C (en) | 1999-07-23 | 2007-08-29 | 奥斯兰姆奥普托半导体股份有限两合公司 | Luminescent array, wavelength-converting sealing material and light source |
DE19936605A1 (en) | 1999-08-04 | 2001-02-15 | Osram Opto Semiconductors Gmbh | Transparent cast resin compound for SMT-compatible LED applications with high temperature and high brightness or luminosity |
JP2001053336A (en) | 1999-08-05 | 2001-02-23 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light emitting element |
US6711200B1 (en) * | 1999-09-07 | 2004-03-23 | California Institute Of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
US6696703B2 (en) | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
EP1142033A1 (en) | 1999-09-27 | 2001-10-10 | LumiLeds Lighting U.S., LLC | A light emitting diode device that produces white light by performing complete phosphor conversion |
US6686691B1 (en) | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
US6630691B1 (en) | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
US6812053B1 (en) | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
US6361192B1 (en) | 1999-10-25 | 2002-03-26 | Global Research & Development Corp | Lens system for enhancing LED light output |
US6420266B1 (en) | 1999-11-02 | 2002-07-16 | Alien Technology Corporation | Methods for creating elements of predetermined shape and apparatuses using these elements |
DE19952932C1 (en) | 1999-11-03 | 2001-05-03 | Osram Opto Semiconductors Gmbh | LED white light source with broadband excitation |
DE19955747A1 (en) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices |
EP1104799A1 (en) | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
US6614056B1 (en) | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
US6515313B1 (en) | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
US6350041B1 (en) | 1999-12-03 | 2002-02-26 | Cree Lighting Company | High output radial dispersing lamp using a solid state light source |
WO2001041225A2 (en) | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
US6410942B1 (en) | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
JP4032636B2 (en) | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | Light emitting element |
US6992334B1 (en) | 1999-12-22 | 2006-01-31 | Lumileds Lighting U.S., Llc | Multi-layer highly reflective ohmic contacts for semiconductor devices |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
US6573537B1 (en) | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
US6903376B2 (en) | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
US6646292B2 (en) | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
USD453745S1 (en) | 1999-12-27 | 2002-02-19 | Nichia Corporation | Light emitting diode |
USD490782S1 (en) | 1999-12-27 | 2004-06-01 | Nichia Corporation | Light emitting diode |
DE19963806C2 (en) | 1999-12-30 | 2002-02-07 | Osram Opto Semiconductors Gmbh | Process for producing a light-emitting diode white light source, use of a plastic molding compound for producing a light-emitting diode white light source and surface-mountable light-emitting diode white light source |
TW512214B (en) | 2000-01-07 | 2002-12-01 | Koninkl Philips Electronics Nv | Luminaire |
TW457689B (en) * | 2000-01-11 | 2001-10-01 | Winbond Electronics Corp | High current ESD protection circuit |
US6504171B1 (en) | 2000-01-24 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Chirped multi-well active region LED |
DE10006738C2 (en) | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Light-emitting component with improved light decoupling and method for its production |
DE10008584A1 (en) | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Semiconductor component for the emission of electromagnetic radiation and method for its production |
ATE350739T1 (en) * | 2000-03-06 | 2007-01-15 | Teledyne Lighting & Display | LED LIGHT SOURCE WITH OPTICAL FIELD OF VIEW CONTROL SYSTEM |
EP1266255B1 (en) | 2000-03-16 | 2008-11-12 | Lee Products, Inc. | Method of designing and manufacturing high efficiency non-imaging optics |
JP3846150B2 (en) | 2000-03-27 | 2006-11-15 | 豊田合成株式会社 | Group III nitride compound semiconductor device and electrode forming method |
US6443594B1 (en) | 2000-03-31 | 2002-09-03 | Koninklijke Philips Electronics N.V. | One-piece lens arrays for collimating and focusing light and led light generators using same |
US6777871B2 (en) * | 2000-03-31 | 2004-08-17 | General Electric Company | Organic electroluminescent devices with enhanced light extraction |
DE10019665A1 (en) | 2000-04-19 | 2001-10-31 | Osram Opto Semiconductors Gmbh | Luminescent diode chip and method for its production |
US6603258B1 (en) | 2000-04-24 | 2003-08-05 | Lumileds Lighting, U.S. Llc | Light emitting diode device that emits white light |
DE10020465A1 (en) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with luminescence conversion element |
CN1252837C (en) | 2000-04-26 | 2006-04-19 | 奥斯兰姆奥普托半导体股份有限两合公司 | Gav-based light-emitting-diode chip and a method for producing a luminescent diode component therewith |
US6814470B2 (en) | 2000-05-08 | 2004-11-09 | Farlight Llc | Highly efficient LED lamp |
TWI289944B (en) | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
DE10026435A1 (en) | 2000-05-29 | 2002-04-18 | Osram Opto Semiconductors Gmbh | Calcium-magnesium-chlorosilicate phosphor and its application in luminescence conversion LEDs |
DE50113755D1 (en) | 2000-05-29 | 2008-04-30 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | WHITE-EMITTING LIGHTING UNIT ON LED BASE |
DE10027206A1 (en) | 2000-05-31 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Age-stable epoxy resin systems, molded materials and components made from them and their use |
US6526082B1 (en) | 2000-06-02 | 2003-02-25 | Lumileds Lighting U.S., Llc | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
DE10032246A1 (en) | 2000-07-03 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Luminescence diode chip based on InGaN and method for its production |
JP2004505172A (en) | 2000-07-28 | 2004-02-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Luminescence conversion based light emitting diodes and phosphors for wavelength conversion |
JP3890860B2 (en) * | 2000-07-28 | 2007-03-07 | 豊田合成株式会社 | Lighting device |
DE10036940A1 (en) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescence conversion LED |
US6527411B1 (en) | 2000-08-01 | 2003-03-04 | Visteon Corporation | Collimating lamp |
DE10039433B4 (en) | 2000-08-11 | 2017-10-26 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
WO2002017371A1 (en) | 2000-08-24 | 2002-02-28 | Toyoda Gosei Co., Ltd. | Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element |
JP2002076434A (en) | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | Light emitting device |
US6946685B1 (en) | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
KR100344103B1 (en) | 2000-09-04 | 2002-07-24 | 에피밸리 주식회사 | The semiconductor device with In(x)Ga(1-x)N passivation layer and the producing method |
US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
US7064355B2 (en) | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
KR20010000545A (en) | 2000-10-05 | 2001-01-05 | 유태경 | The multiple wavelength AlGaInN LED device with pumping layer |
US6526201B1 (en) | 2000-10-12 | 2003-02-25 | Delphi Technologies, Inc. | Light transport coupler assembly |
US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
DE10054966A1 (en) | 2000-11-06 | 2002-05-16 | Osram Opto Semiconductors Gmbh | Component for optoelectronics |
AU2002235132A1 (en) * | 2000-11-16 | 2002-05-27 | Emcore Corporation | Led packages having improved light extraction |
US6768525B2 (en) * | 2000-12-01 | 2004-07-27 | Lumileds Lighting U.S. Llc | Color isolated backlight for an LCD |
US6888997B2 (en) * | 2000-12-05 | 2005-05-03 | Eastman Kodak Company | Waveguide device and optical transfer system for directing light to an image plane |
JP5110744B2 (en) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Light emitting device and manufacturing method thereof |
US6547416B2 (en) * | 2000-12-21 | 2003-04-15 | Koninklijke Philips Electronics N.V. | Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs |
US6547423B2 (en) * | 2000-12-22 | 2003-04-15 | Koninklijke Phillips Electronics N.V. | LED collimation optics with improved performance and reduced size |
AT410266B (en) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT |
US6906352B2 (en) | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
US6800876B2 (en) | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
US7255451B2 (en) | 2002-09-20 | 2007-08-14 | Donnelly Corporation | Electro-optic mirror cell |
MY131962A (en) | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
US6746124B2 (en) * | 2001-02-06 | 2004-06-08 | Robert E. Fischer | Flashlight producing uniform high brightness |
US6541800B2 (en) * | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
US6576932B2 (en) | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
JP2002261333A (en) | 2001-03-05 | 2002-09-13 | Toyoda Gosei Co Ltd | Light-emitting device |
US6833566B2 (en) | 2001-03-28 | 2004-12-21 | Toyoda Gosei Co., Ltd. | Light emitting diode with heat sink |
US6489636B1 (en) | 2001-03-29 | 2002-12-03 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6635904B2 (en) | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6987613B2 (en) | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
US6417019B1 (en) | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6844903B2 (en) | 2001-04-04 | 2005-01-18 | Lumileds Lighting U.S., Llc | Blue backlight and phosphor layer for a color LCD |
US6841931B2 (en) | 2001-04-12 | 2005-01-11 | Toyoda Gosei Co., Ltd. | LED lamp |
WO2002089219A1 (en) | 2001-04-17 | 2002-11-07 | Nichia Corporation | Light-emitting apparatus |
MY134305A (en) | 2001-04-20 | 2007-12-31 | Nichia Corp | Light emitting device |
US7091656B2 (en) | 2001-04-20 | 2006-08-15 | Nichia Corporation | Light emitting device |
JP4050482B2 (en) | 2001-04-23 | 2008-02-20 | 豊田合成株式会社 | Semiconductor light emitting device |
US6598998B2 (en) | 2001-05-04 | 2003-07-29 | Lumileds Lighting, U.S., Llc | Side emitting light emitting device |
US6607286B2 (en) | 2001-05-04 | 2003-08-19 | Lumileds Lighting, U.S., Llc | Lens and lens cap with sawtooth portion for light emitting diode |
US6630689B2 (en) | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
US7001058B2 (en) * | 2001-05-16 | 2006-02-21 | Ben-Zion Inditsky | Ultra-thin backlight |
US6630692B2 (en) | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
TW493287B (en) | 2001-05-30 | 2002-07-01 | Epistar Corp | Light emitting diode structure with non-conductive substrate |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP3912044B2 (en) | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Method for manufacturing group III nitride compound semiconductor light emitting device |
JP2002368263A (en) | 2001-06-06 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light-emitting device |
JP3763754B2 (en) | 2001-06-07 | 2006-04-05 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
JP3791765B2 (en) | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
US6576488B2 (en) | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
JP2004531894A (en) | 2001-06-15 | 2004-10-14 | クリー インコーポレイテッド | UV light emitting diode |
JP2002374007A (en) | 2001-06-15 | 2002-12-26 | Toyoda Gosei Co Ltd | Light-emitting apparatus |
US7029939B2 (en) | 2001-06-18 | 2006-04-18 | Toyoda Gosei Co., Ltd. | P-type semiconductor manufacturing method and semiconductor device |
DE10129785B4 (en) | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for its production |
JP2003017751A (en) | 2001-06-28 | 2003-01-17 | Toyoda Gosei Co Ltd | Light emitting diode |
DE10131698A1 (en) | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Surface-mountable radiation-emitting component and method for its production |
EP1403932B1 (en) | 2001-07-04 | 2012-09-05 | Nichia Corporation | Light emitting nitride semiconductor device |
US6563142B2 (en) | 2001-07-11 | 2003-05-13 | Lumileds Lighting, U.S., Llc | Reducing the variation of far-field radiation patterns of flipchip light emitting diodes |
US6747298B2 (en) | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US7211833B2 (en) | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6955933B2 (en) | 2001-07-24 | 2005-10-18 | Lumileds Lighting U.S., Llc | Light emitting diodes with graded composition active regions |
JP4055503B2 (en) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
DE10139723A1 (en) | 2001-08-13 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Radiation-emitting chip and radiation-emitting component |
DE10139798B9 (en) | 2001-08-14 | 2006-12-28 | Osram Opto Semiconductors Gmbh | Radiation-emitting component with geometrically optimized coupling-out structure |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
JP4388806B2 (en) | 2001-08-21 | 2009-12-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Casing and conductor frame for radiation emitting component, radiation emitting component, display device and / or illumination device with radiation emitting component |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
US6878973B2 (en) | 2001-08-23 | 2005-04-12 | Lumileds Lighting U.S., Llc | Reduction of contamination of light emitting devices |
TWI262606B (en) | 2001-08-30 | 2006-09-21 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor-element and its production method |
JP2003168823A (en) | 2001-09-18 | 2003-06-13 | Toyoda Gosei Co Ltd | Iii nitride based compound semiconductor light emitting element |
US6637921B2 (en) | 2001-09-28 | 2003-10-28 | Osram Sylvania Inc. | Replaceable LED bulb with interchangeable lens optic |
DE10148227B4 (en) | 2001-09-28 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip, method for its production and radiation-emitting component |
JP3948650B2 (en) * | 2001-10-09 | 2007-07-25 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | Light emitting diode and manufacturing method thereof |
ATE525755T1 (en) | 2001-10-12 | 2011-10-15 | Nichia Corp | LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
US6688389B2 (en) | 2001-10-12 | 2004-02-10 | Halliburton Energy Services, Inc. | Apparatus and method for locating joints in coiled tubing operations |
DE10152922B4 (en) | 2001-10-26 | 2010-05-12 | Osram Opto Semiconductors Gmbh | Nitride-based semiconductor device |
US6924596B2 (en) | 2001-11-01 | 2005-08-02 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
USD491538S1 (en) | 2001-11-02 | 2004-06-15 | Nichia Corporation | Light emitting diode |
US6833564B2 (en) | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
CN1236535C (en) | 2001-11-05 | 2006-01-11 | 日亚化学工业株式会社 | Semiconductor element |
US6683327B2 (en) | 2001-11-13 | 2004-01-27 | Lumileds Lighting U.S., Llc | Nucleation layer for improved light extraction from light emitting devices |
US6610598B2 (en) | 2001-11-14 | 2003-08-26 | Solidlite Corporation | Surface-mounted devices of light-emitting diodes with small lens |
USD478877S1 (en) | 2001-11-21 | 2003-08-26 | Nichia Corporation | Light emitting diode |
USD497349S1 (en) | 2001-11-21 | 2004-10-19 | Nichia Corporation | Light emitting diode |
USD490387S1 (en) | 2001-11-22 | 2004-05-25 | Nichia Corporation | Light emitting diode |
USD482666S1 (en) | 2001-11-30 | 2003-11-25 | Nichia Corporation | Light emitting diode (LED) |
DE10158754A1 (en) | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor component, uses conductive adhesive material for joining semiconductor body electrically and thermally to carrier |
US6974234B2 (en) | 2001-12-10 | 2005-12-13 | Galli Robert D | LED lighting assembly |
US6819505B1 (en) | 2003-09-08 | 2004-11-16 | William James Cassarly | Internally reflective ellipsoidal collector with projection lens |
JP2006504116A (en) | 2001-12-14 | 2006-02-02 | ディジタル・オプティクス・インターナショナル・コーポレイション | Uniform lighting system |
USD482337S1 (en) | 2001-12-28 | 2003-11-18 | Nichia Corporation | Light emitting diode (LED) |
USD557224S1 (en) | 2001-12-28 | 2007-12-11 | Nichia Corporation | Light emitting diode |
USD499384S1 (en) | 2001-12-28 | 2004-12-07 | Nichia Corporation | Light emitting diode |
USD534505S1 (en) | 2001-12-28 | 2007-01-02 | Nichia Corporation | Light emitting diode |
USD547736S1 (en) | 2001-12-28 | 2007-07-31 | Nichia Corporation | Light emitting diode |
USD565516S1 (en) | 2001-12-28 | 2008-04-01 | Nichia Corporation | Light emitting diode |
US7153015B2 (en) | 2001-12-31 | 2006-12-26 | Innovations In Optics, Inc. | Led white light optical system |
TW530423B (en) * | 2001-12-31 | 2003-05-01 | Nanya Technology Corp | Manufacturing method of emitter tips |
JP2003209280A (en) * | 2002-01-11 | 2003-07-25 | Hitachi Cable Ltd | Light emitting diode array |
WO2003063570A2 (en) * | 2002-01-24 | 2003-07-31 | Massachusetts Institute Of Technology | A method and system for magnetically assisted statistical assembly of wafers |
US6635503B2 (en) | 2002-01-28 | 2003-10-21 | Cree, Inc. | Cluster packaging of light emitting diodes |
CA2754097C (en) | 2002-01-28 | 2013-12-10 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
USD477580S1 (en) | 2002-01-30 | 2003-07-22 | Nichia Corporation | Light emitting diode |
JP2003243700A (en) | 2002-02-12 | 2003-08-29 | Toyoda Gosei Co Ltd | Iii nitride based compound semiconductor light emitting element |
US6623142B1 (en) | 2002-02-15 | 2003-09-23 | Delphi Technologies, Inc. | Method and apparatus for correcting optical non-uniformities in a light emitting diode |
US6924514B2 (en) | 2002-02-19 | 2005-08-02 | Nichia Corporation | Light-emitting device and process for producing thereof |
US6641284B2 (en) | 2002-02-21 | 2003-11-04 | Whelen Engineering Company, Inc. | LED light assembly |
JP4211359B2 (en) | 2002-03-06 | 2009-01-21 | 日亜化学工業株式会社 | Manufacturing method of semiconductor device |
US20040016718A1 (en) * | 2002-03-20 | 2004-01-29 | Ruey-Jen Hwu | Micro-optic elements and method for making the same |
SG173925A1 (en) | 2002-03-22 | 2011-09-29 | Nichia Corp | Nitride phosphor and production process thereof, and light emitting device |
DE10216394B3 (en) | 2002-04-12 | 2004-01-08 | Osram Opto Semiconductors Gmbh | LED module |
AU2002251550A1 (en) | 2002-04-25 | 2003-11-10 | Nichia Corporation | Light-emitting device using fluorescent substance |
US6791116B2 (en) | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
USD503388S1 (en) | 2002-05-01 | 2005-03-29 | Nichia Corporation | Light emitting diode |
TWI226357B (en) | 2002-05-06 | 2005-01-11 | Osram Opto Semiconductors Gmbh | Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body |
USD491899S1 (en) | 2002-05-22 | 2004-06-22 | Nichia Corporation | Light emitting diode |
JP4123828B2 (en) | 2002-05-27 | 2008-07-23 | 豊田合成株式会社 | Semiconductor light emitting device |
JP2004056088A (en) | 2002-05-31 | 2004-02-19 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor light-emitting element |
US6870311B2 (en) | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US6679621B2 (en) | 2002-06-24 | 2004-01-20 | Lumileds Lighting U.S., Llc | Side emitting LED and lens |
DE10229067B4 (en) | 2002-06-28 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for its production |
KR101030068B1 (en) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | Method of Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device |
DE10231325A1 (en) | 2002-07-11 | 2004-02-12 | Hella Kg Hueck & Co. | Lighting device for vehicles |
TW567618B (en) | 2002-07-15 | 2003-12-21 | Epistar Corp | Light emitting diode with adhesive reflection layer and manufacturing method thereof |
KR100497121B1 (en) | 2002-07-18 | 2005-06-28 | 삼성전기주식회사 | Semiconductor LED Device |
JP2004055855A (en) | 2002-07-19 | 2004-02-19 | Toyoda Gosei Co Ltd | Communication apparatus |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
JP4289027B2 (en) | 2002-07-25 | 2009-07-01 | 豊田合成株式会社 | Light emitting device |
US6835957B2 (en) | 2002-07-30 | 2004-12-28 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with p-type active layer |
JP4507532B2 (en) | 2002-08-27 | 2010-07-21 | 日亜化学工業株式会社 | Nitride semiconductor device |
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
USD537047S1 (en) | 2002-09-05 | 2007-02-20 | Nichia Corporation | Light emitting diode |
USD536672S1 (en) | 2002-09-05 | 2007-02-13 | Nichia Corporation | Light emitting diode |
TWI292961B (en) | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
US6827475B2 (en) | 2002-09-09 | 2004-12-07 | Steven Robert Vetorino | LED light collection and uniform transmission system |
JP2004111623A (en) | 2002-09-18 | 2004-04-08 | Toyoda Gosei Co Ltd | Light emitting device |
CA2495149A1 (en) * | 2002-09-19 | 2004-04-01 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US6682331B1 (en) | 2002-09-20 | 2004-01-27 | Agilent Technologies, Inc. | Molding apparatus for molding light emitting diode lamps |
EP1413618A1 (en) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
US6744077B2 (en) | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
JP2004127988A (en) | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | White light emitting device |
DE10245628A1 (en) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor chip includes mirror layer with planar reflection surfaces inclined at acute angle with respect to main plane of beam production region |
US6896381B2 (en) * | 2002-10-11 | 2005-05-24 | Light Prescriptions Innovators, Llc | Compact folded-optics illumination lens |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
TW561637B (en) | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
JP2004153089A (en) | 2002-10-31 | 2004-05-27 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor light emitting element and its manufacturing method |
JP2004153090A (en) | 2002-10-31 | 2004-05-27 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor light emitting element and its manufacturing method |
TW578280B (en) | 2002-11-21 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
US7692206B2 (en) | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
USD502449S1 (en) | 2002-12-06 | 2005-03-01 | Nichia Corporation | Light emitting diode (LED) |
US6897486B2 (en) | 2002-12-06 | 2005-05-24 | Ban P. Loh | LED package die having a small footprint |
JP4288940B2 (en) | 2002-12-06 | 2009-07-01 | 日亜化学工業株式会社 | Epoxy resin composition |
US6876009B2 (en) | 2002-12-09 | 2005-04-05 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
US7071494B2 (en) | 2002-12-11 | 2006-07-04 | Lumileds Lighting U.S. Llc | Light emitting device with enhanced optical scattering |
US7387677B2 (en) | 2002-12-11 | 2008-06-17 | Ammono Sp. Z O.O. | Substrate for epitaxy and method of preparing the same |
US6900474B2 (en) | 2002-12-20 | 2005-05-31 | Lumileds Lighting U.S., Llc | Light emitting devices with compact active regions |
DE10259945A1 (en) | 2002-12-20 | 2004-07-01 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Phosphors with an extended fluorescence lifetime |
US6986591B2 (en) | 2002-12-20 | 2006-01-17 | Hewlett-Packard Development Company, L.P. | Non-imaging photon concentrator |
TW571449B (en) | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
TW577184B (en) | 2002-12-26 | 2004-02-21 | Epistar Corp | Light emitting layer having voltage/resistance interdependent layer |
US6871982B2 (en) | 2003-01-24 | 2005-03-29 | Digital Optics International Corporation | High-density illumination system |
TW579610B (en) | 2003-01-30 | 2004-03-11 | Epistar Corp | Nitride light-emitting device having adhered reflective layer |
JP2004235648A (en) | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | Manufacturing method of semiconductor substrate for optoelectronic device |
US20040155565A1 (en) | 2003-02-06 | 2004-08-12 | Holder Ronald G. | Method and apparatus for the efficient collection and distribution of light for illumination |
JP2004266246A (en) | 2003-02-12 | 2004-09-24 | Toyoda Gosei Co Ltd | Light emitting device |
US6952024B2 (en) | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
US6987281B2 (en) | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
US7042020B2 (en) | 2003-02-14 | 2006-05-09 | Cree, Inc. | Light emitting device incorporating a luminescent material |
US7170097B2 (en) | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
CA2458134C (en) | 2003-02-19 | 2015-01-27 | Nichia Corporation | Nitride semiconductor device |
US6977396B2 (en) | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
DE102004003135A1 (en) | 2003-02-20 | 2004-09-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Coated luminescent material, useful in a heavy-duty environment comprises a luminescent material powder formed by coated grains, and having specific layer thickness |
WO2004077558A1 (en) | 2003-02-28 | 2004-09-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component comprising a housing body which is metallised in a structured manner, method for producing one such component, and method for the structured metallisation of a body containing plastic |
US6885033B2 (en) | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
JP2004273798A (en) | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | Light emitting device |
JP4182783B2 (en) | 2003-03-14 | 2008-11-19 | 豊田合成株式会社 | LED package |
US7038370B2 (en) | 2003-03-17 | 2006-05-02 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting device |
TW594950B (en) | 2003-03-18 | 2004-06-21 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
US20050018248A1 (en) | 2003-03-20 | 2005-01-27 | Kia Silverbrook | Display device having gravity-fed sheet feeder |
TWI249864B (en) | 2003-03-20 | 2006-02-21 | Toyoda Gosei Kk | LED lamp |
TW587346B (en) | 2003-03-28 | 2004-05-11 | United Epitaxy Co Ltd | Optoelectronic device made by semiconductor compound |
JP4504662B2 (en) | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | LED lamp |
US7105861B2 (en) * | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
US7083993B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US6831302B2 (en) | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
US20040207774A1 (en) | 2003-04-17 | 2004-10-21 | Gothard David L. | Illumination apparatus for LCD/organic displays |
DE10319274A1 (en) | 2003-04-29 | 2004-12-02 | Osram Opto Semiconductors Gmbh | light source |
US7087936B2 (en) | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US20040222426A1 (en) | 2003-05-07 | 2004-11-11 | Bear Hsiung | Light emitting diode module structure |
WO2004102686A1 (en) | 2003-05-09 | 2004-11-25 | Cree, Inc. | Led fabrication via ion implant isolation |
WO2004102153A2 (en) | 2003-05-09 | 2004-11-25 | Cree, Inc. | III-NITRIDE ELECTRONIC DEVICE STRUCTURE WITH HIGH-A1 A1GaN DIFFUSION BARRIER |
US7108386B2 (en) | 2003-05-12 | 2006-09-19 | Illumitech Inc. | High-brightness LED-phosphor coupling |
US7021797B2 (en) * | 2003-05-13 | 2006-04-04 | Light Prescriptions Innovators, Llc | Optical device for repositioning and redistributing an LED's light |
USD495822S1 (en) | 2003-05-16 | 2004-09-07 | Ccs, Inc. | Attachment lens for LED |
US6974229B2 (en) | 2003-05-21 | 2005-12-13 | Lumileds Lighting U.S., Llc | Devices for creating brightness profiles |
US7040774B2 (en) * | 2003-05-23 | 2006-05-09 | Goldeneye, Inc. | Illumination systems utilizing multiple wavelength light recycling |
DE10324909B4 (en) | 2003-05-30 | 2017-09-07 | Osram Opto Semiconductors Gmbh | Housing for a radiation-emitting component, method for its production and radiation-emitting component |
KR100542720B1 (en) | 2003-06-03 | 2006-01-11 | 삼성전기주식회사 | GaN-based Semiconductor junction structure |
USD489690S1 (en) | 2003-06-05 | 2004-05-11 | Nichia Corporation | Light emitting diode (LED) |
TWI240434B (en) | 2003-06-24 | 2005-09-21 | Osram Opto Semiconductors Gmbh | Method to produce semiconductor-chips |
US6921929B2 (en) | 2003-06-27 | 2005-07-26 | Lockheed Martin Corporation | Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens |
CA2634475C (en) | 2003-07-07 | 2014-05-20 | Brasscorp Limited | Led-based inspection lamp with improved collimation optics |
EP1496551B1 (en) | 2003-07-09 | 2013-08-21 | Nichia Corporation | Light emitting diode, method of manufacturing the same and lighting equipment incorporating the same |
US7484871B2 (en) | 2003-07-29 | 2009-02-03 | Valeo Sylvania Llc | Single lens for LED signal light |
US6876008B2 (en) | 2003-07-31 | 2005-04-05 | Lumileds Lighting U.S., Llc | Mount for semiconductor light emitting device |
TWI223900B (en) | 2003-07-31 | 2004-11-11 | United Epitaxy Co Ltd | ESD protection configuration and method for light emitting diodes |
US7009213B2 (en) | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
US6847057B1 (en) | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
US20050047729A1 (en) | 2003-08-29 | 2005-03-03 | Vilgiate Anthony W. | Optical transmission system and surface mount LED module for use therewith |
US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
USD510913S1 (en) | 2003-09-09 | 2005-10-25 | Nichia Corporation | Light emitting diode |
JP4232585B2 (en) | 2003-09-17 | 2009-03-04 | 豊田合成株式会社 | Light emitting device |
JP2005093900A (en) | 2003-09-19 | 2005-04-07 | Yazaki Corp | Led lamp module, and manufacturing method thereof |
US6819506B1 (en) | 2003-09-30 | 2004-11-16 | Infinity Trading Co. Ltd. | Optical lens system for projecting light in a lambertion pattern from a high power led light source |
US6972438B2 (en) | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
US6942360B2 (en) | 2003-10-01 | 2005-09-13 | Enertron, Inc. | Methods and apparatus for an LED light engine |
US6986593B2 (en) | 2003-10-06 | 2006-01-17 | Illumination Management Solutions, Inc. | Method and apparatus for light collection, distribution and zoom |
US7427805B2 (en) | 2003-10-14 | 2008-09-23 | Shen Ming-Tung | Light-emitting diode chip package body and packaging method thereof |
US7348600B2 (en) | 2003-10-20 | 2008-03-25 | Nichia Corporation | Nitride semiconductor device, and its fabrication process |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7012281B2 (en) | 2003-10-30 | 2006-03-14 | Epistar Corporation | Light emitting diode device and manufacturing method |
JP4590905B2 (en) | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | Light emitting element and light emitting device |
JP2007511105A (en) | 2003-11-12 | 2007-04-26 | クリー インコーポレイテッド | Method for processing the back side of a semiconductor wafer having a light emitting device (LED) thereon, and an LED formed by the method |
EP1683206A1 (en) | 2003-11-12 | 2006-07-26 | Cree, Inc. | Light emitting devices with self aligned ohmic contact and methods of fabricating same |
CN100459189C (en) | 2003-11-19 | 2009-02-04 | 日亚化学工业株式会社 | Semiconductor element and manufacturing method for the same |
JP2005203448A (en) | 2004-01-13 | 2005-07-28 | Toyoda Gosei Co Ltd | Light emitter |
TWI270991B (en) | 2004-01-16 | 2007-01-11 | Epistar Corp | Organic adhesive light-emitting device with ohmic metal contact |
WO2005069388A1 (en) | 2004-01-20 | 2005-07-28 | Nichia Corporation | Semiconductor light-emitting device |
US7080932B2 (en) * | 2004-01-26 | 2006-07-25 | Philips Lumileds Lighting Company, Llc | LED with an optical system to increase luminance by recycling emitted light |
US7026653B2 (en) | 2004-01-27 | 2006-04-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting devices including current spreading layers |
US6943381B2 (en) | 2004-01-30 | 2005-09-13 | Lumileds Lighting U.S., Llc | III-nitride light-emitting devices with improved high-current efficiency |
US7345297B2 (en) | 2004-02-09 | 2008-03-18 | Nichia Corporation | Nitride semiconductor device |
JP2005227339A (en) * | 2004-02-10 | 2005-08-25 | Seiko Epson Corp | Light source device, method for manufacturing light source device, and projector |
TWI244220B (en) | 2004-02-20 | 2005-11-21 | Epistar Corp | Organic binding light-emitting device with vertical structure |
US7250715B2 (en) | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
US7279724B2 (en) | 2004-02-25 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
TWI244221B (en) | 2004-03-01 | 2005-11-21 | Epistar Corp | Micro-reflector containing flip-chip light emitting device |
KR100486614B1 (en) | 2004-03-05 | 2005-05-03 | 에피밸리 주식회사 | Ⅲ-Nitride compound semiconductor light emitting device with low contact resistance |
US7109521B2 (en) | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
JP2006066868A (en) | 2004-03-23 | 2006-03-09 | Toyoda Gosei Co Ltd | Solid-state component and solid-state component device |
TWI237402B (en) | 2004-03-24 | 2005-08-01 | Epistar Corp | High luminant device |
US7385226B2 (en) | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
US7202181B2 (en) * | 2004-03-26 | 2007-04-10 | Cres, Inc. | Etching of substrates of light emitting devices |
US7439609B2 (en) | 2004-03-29 | 2008-10-21 | Cree, Inc. | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures |
US7355284B2 (en) | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US7326583B2 (en) | 2004-03-31 | 2008-02-05 | Cree, Inc. | Methods for packaging of a semiconductor light emitting device |
US7279346B2 (en) | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
US7419912B2 (en) | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
TWI230474B (en) | 2004-04-13 | 2005-04-01 | United Epitaxy Co Ltd | High luminance indium gallium aluminum nitride light emitting, device and manufacture method thereof |
US6989555B2 (en) | 2004-04-21 | 2006-01-24 | Lumileds Lighting U.S., Llc | Strain-controlled III-nitride light emitting device |
US7462861B2 (en) | 2004-04-28 | 2008-12-09 | Cree, Inc. | LED bonding structures and methods of fabricating LED bonding structures |
DE102004025610A1 (en) | 2004-04-30 | 2005-11-17 | Osram Opto Semiconductors Gmbh | Optoelectronic component with several current spreading layers and method for its production |
WO2005107420A2 (en) | 2004-05-05 | 2005-11-17 | Rensselaer Polytechnic Institute | High efficiency light source using solid-state emitter and down-conversion material |
US7315119B2 (en) | 2004-05-07 | 2008-01-01 | Avago Technologies Ip (Singapore) Pte Ltd | Light-emitting device having a phosphor particle layer with specific thickness |
US7332365B2 (en) | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
US7393213B2 (en) | 2004-05-19 | 2008-07-01 | Epivalley Co., Ltd. | Method for material growth of GaN-based nitride layer |
US6956247B1 (en) | 2004-05-26 | 2005-10-18 | Lumileds Lighting U.S., Llc | Semiconductor light emitting device including photonic band gap material and luminescent material |
US7064353B2 (en) | 2004-05-26 | 2006-06-20 | Philips Lumileds Lighting Company, Llc | LED chip with integrated fast switching diode for ESD protection |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US7070300B2 (en) | 2004-06-04 | 2006-07-04 | Philips Lumileds Lighting Company, Llc | Remote wavelength conversion in an illumination device |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
US7280288B2 (en) | 2004-06-04 | 2007-10-09 | Cree, Inc. | Composite optical lens with an integrated reflector |
KR101193740B1 (en) | 2004-06-30 | 2012-10-22 | 크리 인코포레이티드 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
JP4511885B2 (en) | 2004-07-09 | 2010-07-28 | Dowaエレクトロニクス株式会社 | Phosphor, LED and light source |
TWI299914B (en) | 2004-07-12 | 2008-08-11 | Epistar Corp | Light emitting diode with transparent electrically conductive layer and omni directional reflector |
US7442644B2 (en) | 2004-07-21 | 2008-10-28 | Nichia Corporation | Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same |
US7201495B2 (en) | 2004-08-03 | 2007-04-10 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device package with cover with flexible portion |
US7405093B2 (en) | 2004-08-18 | 2008-07-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
US8075372B2 (en) | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US7259402B2 (en) | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US7372198B2 (en) | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
US7291865B2 (en) | 2004-09-29 | 2007-11-06 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device |
JP2006108333A (en) | 2004-10-04 | 2006-04-20 | Toyoda Gosei Co Ltd | Lamp |
US7274040B2 (en) | 2004-10-06 | 2007-09-25 | Philips Lumileds Lighting Company, Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
EP1804301B1 (en) | 2004-10-19 | 2017-01-11 | Nichia Corporation | Semiconductor element |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US7473933B2 (en) | 2004-10-29 | 2009-01-06 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US7404756B2 (en) * | 2004-10-29 | 2008-07-29 | 3M Innovative Properties Company | Process for manufacturing optical and semiconductor elements |
US7122839B2 (en) | 2004-10-29 | 2006-10-17 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting devices with graded composition light emitting layers |
US7432536B2 (en) | 2004-11-04 | 2008-10-07 | Cree, Inc. | LED with self aligned bond pad |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7344902B2 (en) | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
US7452737B2 (en) | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
US7352011B2 (en) | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
JP4525309B2 (en) | 2004-11-19 | 2010-08-18 | 日立電線株式会社 | Method for evaluating group III-V nitride semiconductor substrate |
US7253451B2 (en) | 2004-11-29 | 2007-08-07 | Epivalley Co., Ltd. | III-nitride semiconductor light emitting device |
US7335920B2 (en) | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
TWI244228B (en) | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
TWI292631B (en) | 2005-02-05 | 2008-01-11 | Epistar Corp | Light emitting diode and method of the same |
KR100631905B1 (en) * | 2005-02-22 | 2006-10-11 | 삼성전기주식회사 | Nitride single crystal substrate manufacturing method and nitride semiconductor light emitting device manufacturing method using the same |
US7341878B2 (en) | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
CA2620144A1 (en) | 2005-04-06 | 2006-10-12 | Tir Technology Lp | Lighting module with compact colour mixing and collimating optics |
US20070108459A1 (en) | 2005-04-15 | 2007-05-17 | Enfocus Engineering Corp | Methods of Manufacturing Light Emitting Devices |
US7446345B2 (en) | 2005-04-29 | 2008-11-04 | Cree, Inc. | Light emitting devices with active layers that extend into opened pits |
US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
JP4715422B2 (en) | 2005-09-27 | 2011-07-06 | 日亜化学工業株式会社 | Light emitting device |
US20070116423A1 (en) | 2005-11-22 | 2007-05-24 | 3M Innovative Properties Company | Arrays of optical elements and method of manufacturing same |
EP1974389A4 (en) | 2006-01-05 | 2010-12-29 | Illumitex Inc | Separate optical device for directing light from an led |
WO2007080541A1 (en) | 2006-01-16 | 2007-07-19 | Philips Intellectual Property & Standards Gmbh | Light emitting device with a eu-comprising phosphor material |
SA07280006B1 (en) * | 2006-02-01 | 2011-05-14 | سيبا سبشيالتي كيميكالز هولدينج انك | Use of Secondary Sterically Hindered Amines as Processing Additives in Rotomolding Processes |
TWI299917B (en) | 2006-03-17 | 2008-08-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
JP4952233B2 (en) | 2006-04-19 | 2012-06-13 | 日亜化学工業株式会社 | Semiconductor device |
USD578226S1 (en) | 2006-07-20 | 2008-10-07 | Philips Lumileds Lighting Company, Llc | LED package |
US20080030974A1 (en) | 2006-08-02 | 2008-02-07 | Abu-Ageel Nayef M | LED-Based Illumination System |
USD572209S1 (en) | 2006-08-04 | 2008-07-01 | Nichia Corporation | Light emitting diode |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
USD582865S1 (en) | 2007-06-11 | 2008-12-16 | Cree, Inc. | LED chip |
USD571738S1 (en) | 2007-06-14 | 2008-06-24 | Philips Lumileds Lighting Company, Llc | LED package |
USD582866S1 (en) | 2007-09-07 | 2008-12-16 | Cree, Inc. | LED chip |
KR20090032207A (en) | 2007-09-27 | 2009-04-01 | 삼성전기주식회사 | Gan type light emitting diode device and method of manufacturing the same |
KR100882112B1 (en) * | 2007-09-28 | 2009-02-06 | 삼성전기주식회사 | Semiconductor light emitting device and manufacturing method thereof |
JP2009088519A (en) | 2007-09-28 | 2009-04-23 | Samsung Electro-Mechanics Co Ltd | Method of forming fine pattern, and method of manufacturing semiconductor light emitting element using the same |
WO2009100358A1 (en) | 2008-02-08 | 2009-08-13 | Illumitex, Inc. | System and method for emitter layer shaping |
-
2007
- 2007-10-01 US US11/906,194 patent/US7789531B2/en not_active Expired - Fee Related
- 2007-10-01 EP EP07839119A patent/EP2070123A2/en not_active Withdrawn
- 2007-10-01 CN CN2007800428883A patent/CN101553928B/en not_active Expired - Fee Related
- 2007-10-01 WO PCT/US2007/021117 patent/WO2008042351A2/en active Application Filing
- 2007-10-01 KR KR1020097008919A patent/KR20090064474A/en not_active Application Discontinuation
- 2007-10-01 US US11/906,219 patent/US8087960B2/en not_active Expired - Fee Related
- 2007-10-01 JP JP2009531411A patent/JP2010506402A/en active Pending
- 2007-10-02 TW TW096136911A patent/TW200824161A/en unknown
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Also Published As
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WO2008042351A3 (en) | 2008-06-19 |
US8087960B2 (en) | 2012-01-03 |
EP2070123A2 (en) | 2009-06-17 |
WO2008042351A2 (en) | 2008-04-10 |
JP2010506402A (en) | 2010-02-25 |
TW200824161A (en) | 2008-06-01 |
HK1138431A1 (en) | 2010-08-20 |
US20080081531A1 (en) | 2008-04-03 |
CN101553928A (en) | 2009-10-07 |
KR20090064474A (en) | 2009-06-18 |
US7789531B2 (en) | 2010-09-07 |
US20080080166A1 (en) | 2008-04-03 |
CN101553928B (en) | 2011-06-01 |
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