WO2008030960A3 - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents
Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics Download PDFInfo
- Publication number
- WO2008030960A3 WO2008030960A3 PCT/US2007/077759 US2007077759W WO2008030960A3 WO 2008030960 A3 WO2008030960 A3 WO 2008030960A3 US 2007077759 W US2007077759 W US 2007077759W WO 2008030960 A3 WO2008030960 A3 WO 2008030960A3
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- WIPO (PCT)
- Prior art keywords
- stretchable
- nanomembranes
- semiconductors
- electronic circuits
- stretchable electronics
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000005452 bending Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0133—Elastomeric or compliant polymer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177037238A KR102087337B1 (en) | 2006-09-06 | 2007-09-06 | A method of making a stretchable and flexible device |
KR1020147031584A KR101689747B1 (en) | 2006-09-06 | 2007-09-06 | A two-dimensional stretchable and bendable device |
JP2009527564A JP5578509B2 (en) | 2006-09-06 | 2007-09-06 | Method for bonding stretchable components to an elastomeric substrate |
KR20097007081A KR101453419B1 (en) | 2006-09-06 | 2007-09-06 | A two-dimensional stretchable and bendable device |
EP07841968A EP2064710A4 (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
KR1020167032797A KR101814683B1 (en) | 2006-09-06 | 2007-09-06 | A two-dimensional stretchable and bendable device |
CN2007800411276A CN101681695B (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
KR1020147006478A KR101612749B1 (en) | 2006-09-06 | 2007-09-06 | A two-dimensional stretchable and bendable device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82468306P | 2006-09-06 | 2006-09-06 | |
US60/824,683 | 2006-09-06 | ||
US94462607P | 2007-06-18 | 2007-06-18 | |
US60/944,626 | 2007-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008030960A2 WO2008030960A2 (en) | 2008-03-13 |
WO2008030960A3 true WO2008030960A3 (en) | 2008-07-24 |
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ID=39158048
Family Applications (1)
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PCT/US2007/077759 WO2008030960A2 (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2064710A4 (en) |
JP (3) | JP5578509B2 (en) |
KR (5) | KR101814683B1 (en) |
CN (2) | CN101681695B (en) |
MY (2) | MY172115A (en) |
TW (3) | TWI485863B (en) |
WO (1) | WO2008030960A2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
MY149475A (en) | 2013-08-30 |
CN103213935A (en) | 2013-07-24 |
KR101814683B1 (en) | 2018-01-05 |
CN101681695A (en) | 2010-03-24 |
KR20090086199A (en) | 2009-08-11 |
EP2064710A4 (en) | 2011-05-04 |
MY172115A (en) | 2019-11-14 |
KR20140043244A (en) | 2014-04-08 |
KR20160140962A (en) | 2016-12-07 |
JP2013239716A (en) | 2013-11-28 |
KR102087337B1 (en) | 2020-03-11 |
CN103213935B (en) | 2017-03-01 |
JP5578509B2 (en) | 2014-08-27 |
JP2010503238A (en) | 2010-01-28 |
TW200836353A (en) | 2008-09-01 |
KR101453419B1 (en) | 2014-10-23 |
EP2064710A2 (en) | 2009-06-03 |
TWI587527B (en) | 2017-06-11 |
KR20150003308A (en) | 2015-01-08 |
KR20180002083A (en) | 2018-01-05 |
KR101612749B1 (en) | 2016-04-27 |
JP2015216365A (en) | 2015-12-03 |
TW201735380A (en) | 2017-10-01 |
KR101689747B1 (en) | 2016-12-27 |
JP5735585B2 (en) | 2015-06-17 |
TWI485863B (en) | 2015-05-21 |
WO2008030960A2 (en) | 2008-03-13 |
TW201434163A (en) | 2014-09-01 |
TWI654770B (en) | 2019-03-21 |
CN101681695B (en) | 2013-04-10 |
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