WO2008021952A3 - Patterning compositions, masks, and methods - Google Patents

Patterning compositions, masks, and methods Download PDF

Info

Publication number
WO2008021952A3
WO2008021952A3 PCT/US2007/075573 US2007075573W WO2008021952A3 WO 2008021952 A3 WO2008021952 A3 WO 2008021952A3 US 2007075573 W US2007075573 W US 2007075573W WO 2008021952 A3 WO2008021952 A3 WO 2008021952A3
Authority
WO
WIPO (PCT)
Prior art keywords
electromagnetic radiation
methods
wavelength
masks
mask
Prior art date
Application number
PCT/US2007/075573
Other languages
French (fr)
Other versions
WO2008021952A2 (en
Inventor
Stephen J Krak
Joel D Elhard
Eric L Hogue
Timothy J Stanfield
Richard P Heggs
Original Assignee
Battelle Memorial Institute
Stephen J Krak
Joel D Elhard
Eric L Hogue
Timothy J Stanfield
Richard P Heggs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Memorial Institute, Stephen J Krak, Joel D Elhard, Eric L Hogue, Timothy J Stanfield, Richard P Heggs filed Critical Battelle Memorial Institute
Publication of WO2008021952A2 publication Critical patent/WO2008021952A2/en
Publication of WO2008021952A3 publication Critical patent/WO2008021952A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Filters (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Electromagnetic radiation sensitive mask materials are provided. The mask materials are chosen such a first percentage of electromagnetic radiation at a first wavelength is transmitted through the mask material prior to the exposure of the mask material to electromagnetic radiation at a second wavelength and a second percentage of electromagnetic radiation at the first wavelength is transmitted through at least a portion of the mask material after the at least a portion of the mask material is exposed to electromagnetic radiation at the second wavelength. Methods of patterning substrates using electromagnetic radiation sensitive mask materials are also provided. Compositions for producing masks are provided, and systems are provided.
PCT/US2007/075573 2006-08-11 2007-08-09 Patterning compositions, masks, and methods WO2008021952A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82213406P 2006-08-11 2006-08-11
US60/822,134 2006-08-11

Publications (2)

Publication Number Publication Date
WO2008021952A2 WO2008021952A2 (en) 2008-02-21
WO2008021952A3 true WO2008021952A3 (en) 2008-08-21

Family

ID=39082957

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/075573 WO2008021952A2 (en) 2006-08-11 2007-08-09 Patterning compositions, masks, and methods

Country Status (1)

Country Link
WO (1) WO2008021952A2 (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867150A (en) * 1973-06-08 1975-02-18 Grace W R & Co Printing plate process and apparatus using a laser scanned silver negative
DE3342579A1 (en) * 1982-11-27 1984-05-30 Basf Ag, 6700 Ludwigshafen Image-recording materials and image-recording process feasible therewith
DE3541559A1 (en) * 1985-11-25 1987-05-27 Bosch Gmbh Robert Hard mask for photolithographic processes
EP0280197A2 (en) * 1987-02-23 1988-08-31 Oki Electric Industry Company, Limited Process for forming photoresist pattern
JPS6413544A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Pattern forming method
DE9420174U1 (en) * 1994-12-16 1995-02-16 Ver Kunststoffwerke Gmbh Foil for the production of a mask for printed circuit boards
EP0738930A2 (en) * 1995-04-20 1996-10-23 Minnesota Mining And Manufacturing Company UV-absorbable media bleachable IR-radiation
US5994026A (en) * 1998-03-30 1999-11-30 Eastman Kodak Company Flexographic printing plate with mask layer and methods of imaging and printing
DE10028790A1 (en) * 2000-06-15 2001-12-20 Heidelberg Instruments Mikrotechnik Gmbh Laser lithographic manufacture of circuit board by direct marking by exposing photoresist at different wavelength than that used to expose latent mask
US6383690B1 (en) * 1999-12-09 2002-05-07 Autologic Information International, Inc. Platemaking system and method using an imaging mask made from photochromic film

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3867150A (en) * 1973-06-08 1975-02-18 Grace W R & Co Printing plate process and apparatus using a laser scanned silver negative
DE3342579A1 (en) * 1982-11-27 1984-05-30 Basf Ag, 6700 Ludwigshafen Image-recording materials and image-recording process feasible therewith
DE3541559A1 (en) * 1985-11-25 1987-05-27 Bosch Gmbh Robert Hard mask for photolithographic processes
EP0280197A2 (en) * 1987-02-23 1988-08-31 Oki Electric Industry Company, Limited Process for forming photoresist pattern
JPS6413544A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Pattern forming method
DE9420174U1 (en) * 1994-12-16 1995-02-16 Ver Kunststoffwerke Gmbh Foil for the production of a mask for printed circuit boards
EP0738930A2 (en) * 1995-04-20 1996-10-23 Minnesota Mining And Manufacturing Company UV-absorbable media bleachable IR-radiation
US5994026A (en) * 1998-03-30 1999-11-30 Eastman Kodak Company Flexographic printing plate with mask layer and methods of imaging and printing
US6383690B1 (en) * 1999-12-09 2002-05-07 Autologic Information International, Inc. Platemaking system and method using an imaging mask made from photochromic film
DE10028790A1 (en) * 2000-06-15 2001-12-20 Heidelberg Instruments Mikrotechnik Gmbh Laser lithographic manufacture of circuit board by direct marking by exposing photoresist at different wavelength than that used to expose latent mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MENDOZA E A ET AL: "Continuous-tone gray-scale photomasks based on photosensitive spin-on-glass technology for deep-UV lithography applications", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 5256, no. 1, 2003, pages 889 - 896, XP002484979, ISSN: 0277-786X *

Also Published As

Publication number Publication date
WO2008021952A2 (en) 2008-02-21

Similar Documents

Publication Publication Date Title
TW200707083A (en) Method for forming a lithograohy pattern
TW200705111A (en) Leaky absorber for extreme ultraviolet mask
WO2008024537A3 (en) Marking multilayered structures using electromagnetic radiation
EP1845416A3 (en) Coating compositions for photolithography
WO2007137058A3 (en) Methods to reduce the minimum pitch in a pattern
TWI265381B (en) Method for coating a substrate for EUV lithography and substrate with photoresist layer
WO2011050336A3 (en) Semiconductor devices having an enhanced absorption region and associated methods
WO2006060758A3 (en) Methods of exposure for the purpose of thermal management for imprint lithography processes
TW200739248A (en) Photomask, method for manufacturing such photomask, pattern forming method using such photomask and mask data creating method
TW200613327A (en) Melts
TWI346253B (en) Antireflection film composition, patterning process and substrate using the same
WO2011006634A3 (en) Method for the production of a multilayer element, and multilayer element
WO2007015264A3 (en) Self adhesive material with a water soluble protective layer
EP2666057A4 (en) Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound
WO2008105531A1 (en) Pellicle frame apparatus, mask, exposure method, exposure apparatus and device manufacturing method
WO2008076390A3 (en) Dry adhesives and methods for making dry adhesives
TW200702767A (en) Photochromic ophthalmic devices made with dual initiator system
WO2007081835A3 (en) Modulators of hypoxia inducible factor-1 and related uses
TW200739137A (en) Method for forming surface unevenness
TW200709276A (en) A system and method for lithography in semiconductor manufacturing
WO2008087597A3 (en) Device manufacturing method and lithographic apparatus
TW200732831A (en) Protection, mask and exposure apparatus
TW200734812A (en) Multiple resist layer phase shift mask (PSM) blank and PSM formation method
EP2067074A4 (en) Composition for forming a laser-markable coating and a laser-markable material containing organic absorption enhancement additives
WO2005078525A3 (en) Immersion lithography technique and product using a protection layer covering the resist

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07840810

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 07840810

Country of ref document: EP

Kind code of ref document: A2