WO2008021482A3 - Diamond-like carbon electronic devices and methods of manufacture - Google Patents

Diamond-like carbon electronic devices and methods of manufacture Download PDF

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Publication number
WO2008021482A3
WO2008021482A3 PCT/US2007/018232 US2007018232W WO2008021482A3 WO 2008021482 A3 WO2008021482 A3 WO 2008021482A3 US 2007018232 W US2007018232 W US 2007018232W WO 2008021482 A3 WO2008021482 A3 WO 2008021482A3
Authority
WO
WIPO (PCT)
Prior art keywords
carbon
diamond
electronic devices
conductive
manufacture
Prior art date
Application number
PCT/US2007/018232
Other languages
French (fr)
Other versions
WO2008021482A2 (en
Inventor
Chien-Min Sung
Original Assignee
Chien-Min Sung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chien-Min Sung filed Critical Chien-Min Sung
Publication of WO2008021482A2 publication Critical patent/WO2008021482A2/en
Publication of WO2008021482A3 publication Critical patent/WO2008021482A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, fuels cells, LEDs, thermoelectric conversion devices, and other electronic devices are disclosed and described. A diamond-like carbon electronic (26) device can include a conductive diamond-like carbon cathode (34) having specified carbon, hydrogen and sp2 bonded carbon contents. In some cases, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70. A charge carrier separation layer (28) can be coupled adjacent and between the diamond-like carbon cathode (34) and an anode (36). The conductive diamond-like carbon material of the present invention can be useful for any other application which can benefit from the use of conductive and transparent electrodes which are also chemically inert, radiation damage resistance, and are simple to manufacture.
PCT/US2007/018232 2006-08-14 2007-08-14 Diamond-like carbon electronic devices and methods of manufacture WO2008021482A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83788506P 2006-08-14 2006-08-14
US60/837,885 2006-08-14

Publications (2)

Publication Number Publication Date
WO2008021482A2 WO2008021482A2 (en) 2008-02-21
WO2008021482A3 true WO2008021482A3 (en) 2008-04-10

Family

ID=39082763

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/018232 WO2008021482A2 (en) 2006-08-14 2007-08-14 Diamond-like carbon electronic devices and methods of manufacture

Country Status (3)

Country Link
US (4) US7745831B2 (en)
TW (1) TWI411146B (en)
WO (1) WO2008021482A2 (en)

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NL1024250C2 (en) * 2003-09-09 2005-03-10 Fluxxion B V Manufacture of a microsieve, and microsieve and device with a microsieve.
CN101278428B (en) * 2005-09-29 2010-06-09 米克罗西利特龙公司 Fuel battery unit cell, fuel battery unit cell array, fuel battery module, and fuel battery system
TWI411146B (en) * 2006-08-14 2013-10-01 Diamond-like carbon electronic devices and methods of manufacture
US8309967B2 (en) * 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US20090020153A1 (en) * 2007-07-20 2009-01-22 Chien-Min Sung Diamond-Like Carbon Electronic Devices and Methods of Manufacture
KR20120023715A (en) 2009-04-30 2012-03-13 유니버시티 오브 플로리다 리서치 파운데이션, 인크. Single wall carbon nanotube based air cathodes
KR20110034931A (en) * 2009-09-29 2011-04-06 삼성전자주식회사 Solar cell and method for manufacturing the same
WO2011143327A2 (en) * 2010-05-11 2011-11-17 Molecular Imprints, Inc. Nanostructured solar cell
US9991407B1 (en) * 2010-06-22 2018-06-05 Banpil Photonics Inc. Process for creating high efficiency photovoltaic cells
US20120180868A1 (en) * 2010-10-21 2012-07-19 The Regents Of The University Of California Iii-nitride flip-chip solar cells
EP2652822A4 (en) * 2010-12-17 2014-07-30 Univ Florida Hydrogen oxidation and generation over carbon films
AU2012240367A1 (en) 2011-04-04 2013-11-07 University Of Florida Research Foundation, Inc. Nanotube dispersants and dispersant free nanotube films therefrom
US20130026492A1 (en) * 2011-07-30 2013-01-31 Akhan Technologies Inc. Diamond Semiconductor System and Method
US9818953B2 (en) 2011-11-25 2017-11-14 Idemitsu Kosan Co., Ltd. Aromatic amine derivative, material for organic electroluminescent element, and organic electroluminescent element
TWI478405B (en) * 2012-12-13 2015-03-21 Ind Tech Res Inst Structure of thermoelectric film
DE102013210092A1 (en) * 2013-05-29 2014-12-04 Robert Bosch Gmbh Process for producing a solar cell
US10224867B2 (en) 2013-09-23 2019-03-05 Arkema Inc. Nanodiamond coatings for solar cells
US20150179987A1 (en) * 2013-09-30 2015-06-25 Universal Display Corporation Novel substrate and process for high efficiency oled devices
US9853323B2 (en) * 2013-10-31 2017-12-26 Samsung Electronics Co., Ltd. Positive electrode for lithium-ion secondary battery, and lithium-ion secondary battery
JP6242659B2 (en) * 2013-10-31 2017-12-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． Positive electrode of all solid lithium ion secondary battery and all solid lithium ion secondary battery
KR20160088346A (en) 2013-11-20 2016-07-25 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. Carbon dioxide reduction over carbon-containing materials
US9408301B2 (en) * 2014-11-06 2016-08-02 Semiconductor Components Industries, Llc Substrate structures and methods of manufacture
KR102354019B1 (en) * 2015-03-06 2022-01-21 유니버셜 디스플레이 코포레이션 Novel substrate and process for high efficiency oled devices
SG10201503260YA (en) * 2015-04-24 2016-11-29 Wangi Ind Co Pte Ltd A Substantially Transparent Coating
EA034296B1 (en) * 2016-09-09 2020-01-27 Гор Варданян Photoelectric device for solar energy conversion
US11063162B2 (en) * 2018-10-14 2021-07-13 Arizona Board Of Regents On Behalf Of Arizona State University Current generation from radiation with diamond diode-based devices for detection or power generation
CN113224200B (en) * 2021-05-08 2022-11-04 西北核技术研究所 Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment
US11729909B2 (en) 2021-07-20 2023-08-15 Honeywell Federal Manufacturing & Technologies, Llc Multi-layered diamond-like carbon coating for electronic components
US11961896B2 (en) 2021-09-14 2024-04-16 Honeywell Federal Manufacturing & Technologies, Llc Diamond-like carbon coating for passive and active electronics

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Also Published As

Publication number Publication date
TWI411146B (en) 2013-10-01
US20080210950A1 (en) 2008-09-04
US7745831B2 (en) 2010-06-29
US20100330739A1 (en) 2010-12-30
US8227812B2 (en) 2012-07-24
TW200828639A (en) 2008-07-01
WO2008021482A2 (en) 2008-02-21
US20120012169A1 (en) 2012-01-19
US20130180576A1 (en) 2013-07-18
US7951642B2 (en) 2011-05-31

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