WO2008020368A3 - Rf transmitter with controlable rf power amplifier - Google Patents

Rf transmitter with controlable rf power amplifier Download PDF

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Publication number
WO2008020368A3
WO2008020368A3 PCT/IB2007/053140 IB2007053140W WO2008020368A3 WO 2008020368 A3 WO2008020368 A3 WO 2008020368A3 IB 2007053140 W IB2007053140 W IB 2007053140W WO 2008020368 A3 WO2008020368 A3 WO 2008020368A3
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
mode
class
transmitter
control circuit
Prior art date
Application number
PCT/IB2007/053140
Other languages
French (fr)
Other versions
WO2008020368A2 (en
Inventor
Mihai A T Sanduleanu
Ram P Aditham
Original Assignee
Koninkl Philips Electronics Nv
Mihai A T Sanduleanu
Ram P Aditham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Mihai A T Sanduleanu, Ram P Aditham filed Critical Koninkl Philips Electronics Nv
Publication of WO2008020368A2 publication Critical patent/WO2008020368A2/en
Publication of WO2008020368A3 publication Critical patent/WO2008020368A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H03F3/45089—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/331—Sigma delta modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45638—Indexing scheme relating to differential amplifiers the LC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors

Abstract

The invention provides a mult i- standard RF transmitter including a power amplifier (6) for amplifying an RF signal prior to generating an output RF signal (7). A mode of operation of the power amplifier can be controlled, e.g. between class AB and class D operation, by a control circuit (4) operationally connected (5) to the power amplifier (6). Preferably, the control circuit (4) operates as a common-mode control. The mode of operation of the power amplifier (6) is controlled in response to a control parameter, e.g. a level of the input signal (1), a required power, a required efficiency, a desired type of modulation, or a desired degree of linearity. Thus, with this capability to adjust a mode of operation of the power amplifier, the RF transmitter can comply with many communication standards with different requirements, e.g. class AB mode for high linearity and class D mode for high efficiency. The RF transmitter is suited for on-chip implementation. In preferred embodiments, the control circuit (4) generates an amplitude modulated signal (5) to the power amplifier (6) to control its mode of operation. Preferably, the power amplifier (6) includes separated paths for amplitude modulation signals and phase modulation signals, e.g. implemented as a differential cascode coupling with a mixer stage. Preferred embodiments are based on NPWM modulation of phase and amplitude signals, either in analog or digital domain.
PCT/IB2007/053140 2006-08-15 2007-08-08 Rf transmitter with controlable rf power amplifier WO2008020368A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06118946.0 2006-08-15
EP06118946 2006-08-15

Publications (2)

Publication Number Publication Date
WO2008020368A2 WO2008020368A2 (en) 2008-02-21
WO2008020368A3 true WO2008020368A3 (en) 2008-10-16

Family

ID=39082427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/053140 WO2008020368A2 (en) 2006-08-15 2007-08-08 Rf transmitter with controlable rf power amplifier

Country Status (1)

Country Link
WO (1) WO2008020368A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984783A (en) * 1975-03-27 1976-10-05 Motorola, Inc. Amplifier
US5059921A (en) * 1990-07-27 1991-10-22 Motorola Inc. Amplifier having two operating modes
EP0481524A2 (en) * 1990-10-19 1992-04-22 Nec Corporation Output level control circuit for use in RF power amplifier
WO1992011702A1 (en) * 1990-12-17 1992-07-09 Motorola, Inc. Dynamically biased amplifier
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984783A (en) * 1975-03-27 1976-10-05 Motorola, Inc. Amplifier
US5059921A (en) * 1990-07-27 1991-10-22 Motorola Inc. Amplifier having two operating modes
EP0481524A2 (en) * 1990-10-19 1992-04-22 Nec Corporation Output level control circuit for use in RF power amplifier
WO1992011702A1 (en) * 1990-12-17 1992-07-09 Motorola, Inc. Dynamically biased amplifier
US5281925A (en) * 1992-11-17 1994-01-25 Acrodyne Industries, Inc. RF amplifier providing reduced drive response rise times and fall times
US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier

Also Published As

Publication number Publication date
WO2008020368A2 (en) 2008-02-21

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