WO2008016650A3 - Methods of forming carbon-containing silicon epitaxial layers - Google Patents

Methods of forming carbon-containing silicon epitaxial layers Download PDF

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Publication number
WO2008016650A3
WO2008016650A3 PCT/US2007/017193 US2007017193W WO2008016650A3 WO 2008016650 A3 WO2008016650 A3 WO 2008016650A3 US 2007017193 W US2007017193 W US 2007017193W WO 2008016650 A3 WO2008016650 A3 WO 2008016650A3
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WO
WIPO (PCT)
Prior art keywords
containing silicon
carbon
methods
epitaxial layers
silicon epitaxial
Prior art date
Application number
PCT/US2007/017193
Other languages
French (fr)
Other versions
WO2008016650A2 (en
Inventor
Yihwan Kim
Zhiyuan Ye
Ali Zojaji
Original Assignee
Applied Materials Inc
Yihwan Kim
Zhiyuan Ye
Ali Zojaji
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Yihwan Kim, Zhiyuan Ye, Ali Zojaji filed Critical Applied Materials Inc
Priority to KR1020097002917A priority Critical patent/KR101160930B1/en
Priority to DE112007001814T priority patent/DE112007001814T5/en
Priority to JP2009522864A priority patent/JP5090451B2/en
Publication of WO2008016650A2 publication Critical patent/WO2008016650A2/en
Publication of WO2008016650A3 publication Critical patent/WO2008016650A3/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type

Abstract

In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon- containing silicon layer prior to etching. Numerous other aspects are provided.
PCT/US2007/017193 2006-07-31 2007-07-31 Methods of forming carbon-containing silicon epitaxial layers WO2008016650A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097002917A KR101160930B1 (en) 2006-07-31 2007-07-31 Methods of forming carbon-containing silicon epitaxial layers
DE112007001814T DE112007001814T5 (en) 2006-07-31 2007-07-31 A method of forming carbonaceous silicon epitaxial layers
JP2009522864A JP5090451B2 (en) 2006-07-31 2007-07-31 Method for forming carbon-containing silicon epitaxial layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83477306P 2006-07-31 2006-07-31
US60/834,773 2006-07-31

Publications (2)

Publication Number Publication Date
WO2008016650A2 WO2008016650A2 (en) 2008-02-07
WO2008016650A3 true WO2008016650A3 (en) 2008-04-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/017193 WO2008016650A2 (en) 2006-07-31 2007-07-31 Methods of forming carbon-containing silicon epitaxial layers

Country Status (7)

Country Link
US (1) US8029620B2 (en)
JP (1) JP5090451B2 (en)
KR (1) KR101160930B1 (en)
CN (2) CN101496153A (en)
DE (1) DE112007001814T5 (en)
TW (1) TWI379347B (en)
WO (1) WO2008016650A2 (en)

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