WO2008010941A2 - Improved methods for atomic layer deposition - Google Patents
Improved methods for atomic layer deposition Download PDFInfo
- Publication number
- WO2008010941A2 WO2008010941A2 PCT/US2007/015917 US2007015917W WO2008010941A2 WO 2008010941 A2 WO2008010941 A2 WO 2008010941A2 US 2007015917 W US2007015917 W US 2007015917W WO 2008010941 A2 WO2008010941 A2 WO 2008010941A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- deposition chamber
- precursor
- pressure
- deposition
- time
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07810399.1A EP2049705A4 (en) | 2006-07-20 | 2007-07-12 | Improved methods for atomic layer deposition |
US12/373,913 US20100036144A1 (en) | 2006-07-20 | 2007-07-12 | Methods for atomic layer deposition |
JP2009520769A JP2009545135A (en) | 2006-07-20 | 2007-07-12 | Improved atomic layer deposition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83220906P | 2006-07-20 | 2006-07-20 | |
US60/832,209 | 2006-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008010941A2 true WO2008010941A2 (en) | 2008-01-24 |
WO2008010941A3 WO2008010941A3 (en) | 2008-07-31 |
Family
ID=38957280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/015917 WO2008010941A2 (en) | 2006-07-20 | 2007-07-12 | Improved methods for atomic layer deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100036144A1 (en) |
EP (1) | EP2049705A4 (en) |
JP (1) | JP2009545135A (en) |
KR (1) | KR20090037473A (en) |
TW (1) | TW200818273A (en) |
WO (1) | WO2008010941A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6691009B2 (en) * | 2016-07-05 | 2020-04-28 | 株式会社Adeka | Raw material for forming metal carbide-containing thin film and method for producing metal carbide-containing thin film |
JP6704808B2 (en) * | 2016-07-05 | 2020-06-03 | 株式会社Adeka | Raw material for forming thin film and method for producing thin film |
JP6954776B2 (en) | 2017-06-29 | 2021-10-27 | 株式会社Adeka | Raw material for thin film formation and manufacturing method of thin film |
KR102333599B1 (en) * | 2019-11-15 | 2021-11-30 | 주식회사 이지티엠 | Method of depositing thin films using protective material |
WO2023191360A1 (en) * | 2022-03-28 | 2023-10-05 | 솔브레인 주식회사 | Step rate improver, method for forming thin film using same, and semiconductor substrate and semiconductor device manufactured therefrom |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4236707B2 (en) * | 1995-09-14 | 2009-03-11 | 日産自動車株式会社 | Chemical vapor deposition method and chemical vapor deposition apparatus |
KR100814980B1 (en) * | 2000-09-28 | 2008-03-18 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | Vapor deposition of oxides, silicates, and phosphates |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US6528430B2 (en) * | 2001-05-01 | 2003-03-04 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3 |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
KR100442414B1 (en) * | 2002-04-25 | 2004-07-30 | 학교법인 포항공과대학교 | Organometal complex and method of depositing a metal silicate thin layer using same |
US7067439B2 (en) * | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
KR100723399B1 (en) * | 2002-08-06 | 2007-05-30 | 삼성전자주식회사 | Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film and preparing method thereof |
US7927658B2 (en) * | 2002-10-31 | 2011-04-19 | Praxair Technology, Inc. | Deposition processes using group 8 (VIII) metallocene precursors |
US20040086643A1 (en) * | 2002-11-05 | 2004-05-06 | Asahi Denka Co., Ltd. | Precursor for chemical vapor deposition and thin film formation process using the same |
WO2005063685A1 (en) * | 2003-12-25 | 2005-07-14 | Asahi Denka Co., Ltd. | Metal compound, material for forming thin film and method for preparing thin film |
JP4716737B2 (en) * | 2005-01-05 | 2011-07-06 | 株式会社日立国際電気 | Substrate processing equipment |
US7514119B2 (en) * | 2005-04-29 | 2009-04-07 | Linde, Inc. | Method and apparatus for using solution based precursors for atomic layer deposition |
US20070160756A1 (en) * | 2006-01-07 | 2007-07-12 | Helmuth Treichel | Apparatus and method for the deposition of ruthenium containing films |
KR20150139628A (en) * | 2007-09-14 | 2015-12-11 | 시그마 알드리치 컴퍼니 엘엘씨 | Methods of preparing thin films by atomic layer deposition using hafnium and zirconium-based precursors |
US8168811B2 (en) * | 2008-07-22 | 2012-05-01 | Advanced Technology Materials, Inc. | Precursors for CVD/ALD of metal-containing films |
-
2007
- 2007-07-12 WO PCT/US2007/015917 patent/WO2008010941A2/en active Application Filing
- 2007-07-12 US US12/373,913 patent/US20100036144A1/en not_active Abandoned
- 2007-07-12 EP EP07810399.1A patent/EP2049705A4/en not_active Withdrawn
- 2007-07-12 JP JP2009520769A patent/JP2009545135A/en active Pending
- 2007-07-12 KR KR1020097003372A patent/KR20090037473A/en not_active Application Discontinuation
- 2007-07-20 TW TW096126681A patent/TW200818273A/en unknown
Non-Patent Citations (1)
Title |
---|
See references of EP2049705A4 * |
Also Published As
Publication number | Publication date |
---|---|
US20100036144A1 (en) | 2010-02-11 |
JP2009545135A (en) | 2009-12-17 |
WO2008010941A3 (en) | 2008-07-31 |
EP2049705A4 (en) | 2014-10-29 |
EP2049705A2 (en) | 2009-04-22 |
KR20090037473A (en) | 2009-04-15 |
TW200818273A (en) | 2008-04-16 |
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