WO2008005944A3 - Systems and methods for alignment of laser beam (s) for semiconductor link processing - Google Patents

Systems and methods for alignment of laser beam (s) for semiconductor link processing Download PDF

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Publication number
WO2008005944A3
WO2008005944A3 PCT/US2007/072683 US2007072683W WO2008005944A3 WO 2008005944 A3 WO2008005944 A3 WO 2008005944A3 US 2007072683 W US2007072683 W US 2007072683W WO 2008005944 A3 WO2008005944 A3 WO 2008005944A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
alignment
systems
methods
optical element
Prior art date
Application number
PCT/US2007/072683
Other languages
French (fr)
Other versions
WO2008005944A2 (en
Inventor
Kelly J Bruland
Steven N Swaringen
Original Assignee
Electro Scient Ind Inc
Kelly J Bruland
Steven N Swaringen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scient Ind Inc, Kelly J Bruland, Steven N Swaringen filed Critical Electro Scient Ind Inc
Priority to KR1020097000025A priority Critical patent/KR101346118B1/en
Publication of WO2008005944A2 publication Critical patent/WO2008005944A2/en
Publication of WO2008005944A3 publication Critical patent/WO2008005944A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B23K26/043—Automatically aligning the laser beam along the beam path, i.e. alignment of laser beam axis relative to laser beam apparatus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method (400) makes a discrete adjustment to static alignment of a laser beam in a machine (500, 700A, 700B, 700C, 800, 1000) for selectively irradiating conductive links on or within a semiconductor substrate (240) using the laser beam. The laser beam propagates along a beam path (510, 640, 710) having an axis (650) extending from a laser to a laser beam spot (110, 610) at a location on or within the semiconductor substrate (240). The method (400) generates (420), based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element (555, 560, 720, 730, 744, 746, 836, 838, 840, 854, 860, 225) of the machine (500, 700A, 700B, 700C, 800, 1000) effecting the laser beam path (510, 640, 710). The method (400) also sends (430) said at least one signal to the adjustable optical element (555, 560, 720, 730, 744, 746, 836, 838, 840, 854, 860, 225). The method (400) then adjusts (440) the adjustable optical element (555, 560, 720, 730, 744, 746, 836, 838, 840, 854, 860, 225) in response to said at least one signal so as to improve static alignment of the laser beam path axis (650).
PCT/US2007/072683 2006-07-05 2007-07-02 Systems and methods for alignment of laser beam (s) for semiconductor link processing WO2008005944A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020097000025A KR101346118B1 (en) 2006-07-05 2007-07-02 Systems and methods for alignment of laser beam(s) for semiconductor link processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/481,562 2006-07-05
US11/481,562 US8049135B2 (en) 2004-06-18 2006-07-05 Systems and methods for alignment of laser beam(s) for semiconductor link processing

Publications (2)

Publication Number Publication Date
WO2008005944A2 WO2008005944A2 (en) 2008-01-10
WO2008005944A3 true WO2008005944A3 (en) 2008-02-21

Family

ID=38895423

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/072683 WO2008005944A2 (en) 2006-07-05 2007-07-02 Systems and methods for alignment of laser beam (s) for semiconductor link processing

Country Status (4)

Country Link
US (1) US8049135B2 (en)
KR (1) KR101346118B1 (en)
TW (1) TWI414382B (en)
WO (1) WO2008005944A2 (en)

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US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
US8026158B2 (en) * 2007-06-01 2011-09-27 Electro Scientific Industries, Inc. Systems and methods for processing semiconductor structures using laser pulses laterally distributed in a scanning window
US8076605B2 (en) * 2007-06-25 2011-12-13 Electro Scientific Industries, Inc. Systems and methods for adapting parameters to increase throughput during laser-based wafer processing
US8379204B1 (en) 2007-08-17 2013-02-19 Gsi Group Corporation System and method for automatic laser beam alignment
US8461479B2 (en) * 2009-12-23 2013-06-11 Electro Scientific Industries, Inc. Adaptive processing constraints for memory repair
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US8739574B2 (en) * 2011-09-21 2014-06-03 Polaronyx, Inc. Method and apparatus for three dimensional large area welding and sealing of optically transparent materials
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US9049754B2 (en) * 2011-10-28 2015-06-02 X-Laser, Llc System and method for the control of a plurality of lasers
JP6030299B2 (en) * 2011-12-20 2016-11-24 株式会社ディスコ Laser processing equipment
CN107107266B (en) * 2015-01-30 2019-09-20 株式会社牧野铣床制作所 Laser machine
CN113834567A (en) * 2015-08-21 2021-12-24 阿尔特勒法斯特系统公司 Automated delay line alignment
US10707107B2 (en) 2015-12-16 2020-07-07 Kla-Tencor Corporation Adaptive alignment methods and systems
US10215531B2 (en) * 2016-04-20 2019-02-26 The United States Of America, As Represented By The Secretary Of The Navy Testing system for optical aiming systems with light emitter systems including testing system for thermal drift and related methods
CN108681093A (en) * 2018-08-13 2018-10-19 广州光智科技有限公司 Double light beam laser colimated light system
JP2022503883A (en) 2018-09-28 2022-01-12 コーニング インコーポレイテッド Rotary light source used to modify the board
KR102302140B1 (en) * 2019-10-21 2021-09-14 한국기계연구원 Apparatus and method for selective laser transfer using multi-beam generation and switch
WO2021080327A1 (en) * 2019-10-21 2021-04-29 한국기계연구원 Selective laser transfer device and transfer method
CN114069374A (en) * 2020-07-29 2022-02-18 刘建圣 Laser stable source system and laser source module
TWI732636B (en) * 2020-07-29 2021-07-01 國立成功大學 Laser stabilizing system and laser source module
CN113458627A (en) * 2021-08-05 2021-10-01 瑟福迪恩半导体设备技术(苏州)有限公司 Light path dimming method of laser cutting equipment
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Also Published As

Publication number Publication date
TWI414382B (en) 2013-11-11
KR20090033211A (en) 2009-04-01
US8049135B2 (en) 2011-11-01
WO2008005944A2 (en) 2008-01-10
KR101346118B1 (en) 2013-12-31
TW200817123A (en) 2008-04-16
US20070020785A1 (en) 2007-01-25

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