WO2007149113A3 - Friction reducing aid for cmp - Google Patents

Friction reducing aid for cmp Download PDF

Info

Publication number
WO2007149113A3
WO2007149113A3 PCT/US2006/041420 US2006041420W WO2007149113A3 WO 2007149113 A3 WO2007149113 A3 WO 2007149113A3 US 2006041420 W US2006041420 W US 2006041420W WO 2007149113 A3 WO2007149113 A3 WO 2007149113A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
cmp
friction reducing
provides
reducing aid
Prior art date
Application number
PCT/US2006/041420
Other languages
French (fr)
Other versions
WO2007149113A2 (en
WO2007149113A9 (en
Inventor
Kevin J Moeggenborg
Phillip W Carter
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to JP2008542318A priority Critical patent/JP2009516928A/en
Publication of WO2007149113A2 publication Critical patent/WO2007149113A2/en
Publication of WO2007149113A9 publication Critical patent/WO2007149113A9/en
Publication of WO2007149113A3 publication Critical patent/WO2007149113A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/0056Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Abstract

The invention provides a chemical-mechanical polishing System for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing System is 8 to 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing System. The polishing System provides for reduced friction during polishing of substrates.
PCT/US2006/041420 2005-11-22 2006-10-24 Friction reducing aid for cmp WO2007149113A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008542318A JP2009516928A (en) 2005-11-22 2006-10-24 Friction reduction aid for CMP

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/287,039 2005-11-22
US11/287,039 US20070117497A1 (en) 2005-11-22 2005-11-22 Friction reducing aid for CMP

Publications (3)

Publication Number Publication Date
WO2007149113A2 WO2007149113A2 (en) 2007-12-27
WO2007149113A9 WO2007149113A9 (en) 2008-02-28
WO2007149113A3 true WO2007149113A3 (en) 2008-04-10

Family

ID=38054171

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/041420 WO2007149113A2 (en) 2005-11-22 2006-10-24 Friction reducing aid for cmp

Country Status (6)

Country Link
US (1) US20070117497A1 (en)
JP (1) JP2009516928A (en)
KR (1) KR20080070675A (en)
CN (1) CN101313388A (en)
TW (1) TWI311091B (en)
WO (1) WO2007149113A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007103578A1 (en) * 2006-03-09 2007-09-13 Cabot Microelectronics Corporation Method of polishing a tungsten carbide surface
EP2634158B1 (en) * 2011-05-24 2016-08-10 Rohm and Haas Company Improved quality multi-spectral zinc sulfide
CN104145324B (en) * 2011-12-28 2017-12-22 恩特格里斯公司 Composition and method for selective etch titanium nitride
CN102775916B (en) * 2012-07-16 2015-01-07 芜湖海森材料科技有限公司 Polishing composition for improving surface quality of sapphire
US9259818B2 (en) * 2012-11-06 2016-02-16 Sinmat, Inc. Smooth diamond surfaces and CMP method for forming
JP6007094B2 (en) * 2012-12-18 2016-10-12 花王株式会社 Polishing liquid composition for sapphire plate
KR20150103169A (en) * 2013-01-04 2015-09-09 가부시키가이샤 후지미인코퍼레이티드 Method for polishing alloy material and method for manufacturing alloy material
SG11201506102TA (en) * 2013-02-28 2015-09-29 Fujimi Inc Polishing slurry for cobalt removal
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
CN103589344B (en) * 2013-11-14 2015-06-10 上海新安纳电子科技有限公司 Method for preparing alumina polishing solution
WO2016043089A1 (en) * 2014-09-16 2016-03-24 山口精研工業株式会社 Polishing agent composition for sapphire substrate
KR102447178B1 (en) 2015-09-01 2022-09-26 삼성전자주식회사 Methods of manufacturing semiconductor devices
TWI650392B (en) * 2016-02-16 2019-02-11 美商卡博特微電子公司 Method for polishing III to V materials
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
DE102017110198A1 (en) * 2017-05-11 2018-11-15 Walter Maschinenbau Gmbh Grinding and / or EDM machine and method for measuring and / or referencing the machine
KR102431416B1 (en) 2017-11-15 2022-08-12 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Compositions for performing material removal operations and methods for forming same
CN110358454A (en) * 2019-07-20 2019-10-22 大连理工大学 A kind of general chemistry machine polishing liquor
EP3916061B1 (en) 2019-10-03 2023-07-05 Nissan Chemical Corporation Cation-containing polishing composition for eliminating protrusions at periphery of laser mark
US11879094B2 (en) 2022-06-03 2024-01-23 Halliburton Energy Services, Inc. Enhancing friction reduction and protection of wellbore equipment during hydraulic fracturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11140427A (en) * 1997-11-13 1999-05-25 Kobe Steel Ltd Polishing liquid and polishing
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2710997C3 (en) * 1977-03-14 1980-08-14 Dr. Karl Thomae Gmbh, 7950 Biberach 4-Alkoxy carbonylamino-phenylethanolamines, their production and their use as pharmaceuticals
JPH0228112A (en) * 1988-04-21 1990-01-30 Kaken Pharmaceut Co Ltd Intraocular tension regulator for instillation
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
DE3902753A1 (en) * 1989-01-31 1990-08-02 Henkel Kgaa METHOD FOR THE HYDROTHERMAL PRODUCTION OF POTASSIUM SILICATE SOLUTIONS WITH HIGH SI0 (DOWN ARROW) 2 (DOWN ARROW): K (DOWN ARROW) 2 (DOWN ARROW) 0-MOLE RATIO
DE3938789A1 (en) * 1989-11-23 1991-05-29 Henkel Kgaa METHOD FOR THE HYDROTHERMAL PRODUCTION OF POTASSIUM SILICATE SOLUTIONS
DE19643592A1 (en) * 1996-10-22 1998-04-23 Bayer Ag Process for the preparation of alpha-alkoxy-alpha-trifluoromethyl-arylacetic acid esters and -arylacetic acids
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6322600B1 (en) * 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
TW593331B (en) * 1997-07-25 2004-06-21 Inspire Pharmaceuticals Inc Method for large-scale production of di(uridine 5')-tetraphosphate and salts thereof
US6051605A (en) * 1997-08-08 2000-04-18 Warner-Lambert Company Method of treating psychosis and schizophrenia
CO5070714A1 (en) * 1998-03-06 2001-08-28 Nalco Chemical Co PROCESS FOR THE PREPARATION OF STABLE COLOIDAL SILICE
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP3941284B2 (en) * 1999-04-13 2007-07-04 株式会社日立製作所 Polishing method
AU1464101A (en) * 1999-12-21 2001-07-03 Gpi Nil Holdings, Inc. Hydantoin derivative compounds, pharmaceutical compositions, and methods of using same
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20030032078A1 (en) * 2001-01-23 2003-02-13 Board Of Regents, The University Of Texas System Methods and compositions for the treatment of macular and retinal degenerations
JP3945745B2 (en) * 2001-03-09 2007-07-18 三井金属鉱業株式会社 Cerium-based abrasive and abrasive slurry and method for producing cerium-based abrasive
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
JP4008219B2 (en) * 2001-09-27 2007-11-14 触媒化成工業株式会社 Abrasive
JP4278020B2 (en) * 2001-10-30 2009-06-10 日揮触媒化成株式会社 Abrasive particles and method for producing abrasives
PA8557501A1 (en) * 2001-11-12 2003-06-30 Pfizer Prod Inc BENZAMIDA, HETEROARILAMIDA AND INVESTED AMIDAS
US6685755B2 (en) * 2001-11-21 2004-02-03 Saint-Gobain Abrasives Technology Company Porous abrasive tool and method for making the same
US6827639B2 (en) * 2002-03-27 2004-12-07 Catalysts & Chemicals Industries Co., Ltd. Polishing particles and a polishing agent
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
JP2004128112A (en) * 2002-10-01 2004-04-22 Renesas Technology Corp Manufacturing method of semiconductor device
EP2327401A3 (en) * 2003-03-14 2011-10-19 University of Washington Retinoid Replacements and Opsin Agonists and Methods for the Use Thereof
JP2005007520A (en) * 2003-06-19 2005-01-13 Nihon Micro Coating Co Ltd Abrasive pad, manufacturing method thereof, and grinding method thereof
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US7566808B2 (en) * 2004-02-17 2009-07-28 President And Fellows Of Harvard College Management of ophthalmologic disorders, including macular degeneration
US20060252107A1 (en) * 2005-02-22 2006-11-09 Acucela, Inc. Compositions and methods for diagnosing and treating retinal diseases
US20070039926A1 (en) * 2005-08-17 2007-02-22 Cabot Microelectronics Corporation Abrasive-free polishing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11140427A (en) * 1997-11-13 1999-05-25 Kobe Steel Ltd Polishing liquid and polishing
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Also Published As

Publication number Publication date
US20070117497A1 (en) 2007-05-24
TW200734117A (en) 2007-09-16
TWI311091B (en) 2009-06-21
CN101313388A (en) 2008-11-26
WO2007149113A2 (en) 2007-12-27
KR20080070675A (en) 2008-07-30
WO2007149113A9 (en) 2008-02-28
JP2009516928A (en) 2009-04-23

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