WO2007128835A1 - Optical imaging device with thermal attenuation - Google Patents

Optical imaging device with thermal attenuation Download PDF

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Publication number
WO2007128835A1
WO2007128835A1 PCT/EP2007/054503 EP2007054503W WO2007128835A1 WO 2007128835 A1 WO2007128835 A1 WO 2007128835A1 EP 2007054503 W EP2007054503 W EP 2007054503W WO 2007128835 A1 WO2007128835 A1 WO 2007128835A1
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WO
WIPO (PCT)
Prior art keywords
immersion
temperature
optical imaging
temperature distribution
medium
Prior art date
Application number
PCT/EP2007/054503
Other languages
French (fr)
Inventor
Bernhard Gellrich
Jens Kugler
Thomas Ittner
Stefan Hembacher
Karl-Heinz Schimitzek
Payam Tayebati
Hubert Holderer
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to JP2009508387A priority Critical patent/JP5543201B2/en
Priority to EP07728955.1A priority patent/EP2016465B1/en
Priority to CN200780023553.7A priority patent/CN101479665B/en
Priority to KR1020087029857A priority patent/KR101411764B1/en
Publication of WO2007128835A1 publication Critical patent/WO2007128835A1/en
Priority to US12/267,074 priority patent/US8363206B2/en
Priority to US13/712,576 priority patent/US8902401B2/en
Priority to US14/531,109 priority patent/US9810996B2/en
Priority to US15/800,606 priority patent/US20180181007A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Definitions

  • the present invention relates to an optical imaging device.
  • the invention may be used in the context of microlithography used in fabricating microelectronic circuits.
  • the invention further relates to an optical imaging method which may, among others, be performed with the optical imaging device according to the invention.
  • the imaging device e.g. the optical elements such as lenses, mirrors and gratings
  • the tough requirements with respect to accuracy lying in a microscopic range in the area of a few nanometers are none the less a consequence of the permanent need to reduce the resolution of the optical systems used in fabricating microelectronic circuitry in order to push forward miniaturization of the microelectronic circuitry to be produced.
  • the wavelength of light used may be reduced as it is the case with systems working in the extreme UV (EUV) range at working wavelengths in the area of 13 nm or the numerical aperture of the projection system used may be increased.
  • EUV extreme UV
  • One possibility to remarkably increase the numerical aperture above the value 1 is realized in so-called immersion systems, wherein an immersion medium having a refractive index larger than 1 is placed between an immersion element of the projection system and the substrate to be exposed.
  • a further increase in the numerical aperture is possible with optical elements having a particularly high refractive index.
  • the immersion element typically is the last optical element located closest to the substrate to be exposed.
  • the immersion medium typically contacts this last optical element and the substrate.
  • the immersion element does not necessarily have to be the last optical element, i.e. the optical element located closest to the substrate.
  • immersion element may also be separated from the substrate by one or more further optical elements.
  • the immersion medium the immersion element is at least partly immersed in may be placed, for example, between two optical elements of the optical system.
  • the present invention is based on the finding that such thermal environmental influences, in particular, influences originating from the immersion medium, in an immersion system may cause local fluctuations within the temperature distribution of the respective optical elements that are not negligible or even considerable in relation to the absorption effects of the projection light.
  • the desired compensation of such thermal environmental influences is also possible with refractive systems and refractive optical elements, respectively, as they are used with immersion systems if a corresponding thermal attenuation is available reducing, besides the absorption related fluctuations, also fluctuations in the temperature distribution of the respective optical element induced by the environment of the respective optical element.
  • a thermal attenuation device for an immersion element, said thermal attenuation device being adapted to provide, among others, a reduction of fluctuations in the temperature distribution of the immersion element induced by the immersion medium.
  • the invention is furthermore also based on the finding that, in particular for refractive elements, a corresponding temperature behavior model, in particular accounting for non- stationary and/or local environmental influences, may be set up and used in an active control of the temperature distribution.
  • a temperature behavior model who is possible to predict or estimate the temperature distribution which is, if at all, only hardly to the measured in the optically used area without disturbance to the imaging process, and to account for this predicted or estimated temperature distribution in the control of the temperature distribution.
  • An object of the present invention is thus an optical imaging device, in particular for use in microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone.
  • the optical element group is adapted to project the projection pattern onto the substrate and comprises a plurality of optical elements with an immersion element to which the substrate is at least temporarily located adjacent to during operation.
  • the immersion zone is located between the immersion element and the substrate and is at least temporarily filled with an immersion medium.
  • a thermal attenuation device is provided, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the immersion element induced by the immersion medium.
  • a further object of the present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, an immersion element of the optical element group being at least partly immersed in an immersion medium in the area of an immersion zone located adjacent to the substrate.
  • a thermal attenuation device fluctuations in the temperature distribution TE of the immersion element induced by the immersion medium are reduced.
  • a further object of the present invention is an optical imaging device, in particular for microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone, wherein the optical element group is adapted to project the projection pattern onto the substrate.
  • the optical element group comprises a plurality of optical elements with at least one immersion element at least temporarily immersed in an immersion medium in the area of an immersion zone during operation.
  • thermal attenuation device said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the immersion element induced by the immersion medium, wherein the thermal attenuation device comprises at least one thermal decoupling device for at least partial thermal decoupling of the immersion element from at least a part of its environment.
  • a further object of the present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, an immersion element of the optical element group being at least partly immersed in an immersion medium in the area of an immersion zone.
  • a thermal attenuation device via a thermal attenuation device, fluctuations in the temperature distribution TE of the immersion element induced by the immersion medium are reduced, wherein by the thermal attenuation device that at least partial thermal decoupling of the immersion element from at least a part of its environment is provided.
  • a further object over present invention is an optical imaging device, in particular for use in microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate.
  • the optical element group is adapted to project the projection pattern onto the substrate and comprises a plurality of optical elements with at least one thermally controlled optical element.
  • a thermal attenuation device is associated to the thermally controlled optical element, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the thermally controlled optical element, wherein the thermal attenuation device, for reducing temperature fluctuations within the thermally controlled optical element, accesses a temperature behavior model of the thermally controlled optical element.
  • a further object over present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, the optical elements comprising a thermally controlled optical element.
  • a thermal attenuation device via a thermal attenuation device, fluctuations within the temperature distribution TE of the thermally controlled optical element are reduced, wherein for reducing the temperature fluctuations within the thermally controlled optical element a temperature behavior model of the thermally controlled optical element is accessed.
  • Figure 1 is a schematic representation of a preferred embodiment of an optical imaging device according to the invention with which a preferred embodiment of an optical imaging method according to the invention may be executed;
  • Figure 2 is a schematic partially sectional view of a part of the imaging device of Figure
  • Figure 3 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention
  • Figure 4 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention
  • Figure 5 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention.
  • Figure 6 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention.
  • Figure 7 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention.
  • Figure 8 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention.
  • Figure 9 is a block diagram of a preferred embodiment of the optical imaging method according to the invention which may be executed with the optical imaging device of Figure 1 ;
  • Figure 10 is a schematic partially sectional view of a further preferred embodiment of the optical imaging device according to the invention. DETAILED DESCRIPTION OF THE INVENTION
  • Figure 1 shows a schematic representation of a preferred embodiment of the optical imaging device according to the invention in the form of a microlithography device 101 operating with light in the UV range at a wavelength of 193 nm.
  • the microlithography device 101 comprises an illumination system 102, a mask device in the form of a mask table 103, and optical projection system in the form of an objective 104 having an optical axis 104.1 and a substrate device in the form of a wafer table 105.
  • the illumination system 102 illuminates a mask 103.1 arranged on the mask table 103 with a projection light beam - not shown in further detail - having a wavelength of 193 nm.
  • a projection pattern is formed on the mask 104.3 which is projected with the projection light beam via the optical elements arranged within the objective 104 onto a substrate in the form of a wafer 105.1 arranged on the wafer table 105.
  • the objective 104 comprises an optical element group 106 formed by a gay series of optical elements 107 to 109.
  • the optical elements 107 to 109 are held within the housing 104.2 of the objective. Due to the working wavelength of 193 nm the optical elements 107 to 109 are refractive optical elements such as lenses or the like. Thereby, the last optical element 109 located closest to the wafer 105.1 during operation is a so called closing element or last lens element.
  • the microlithography device 101 is an immersion system.
  • a liquid immersion medium 110.1 for example highly purified water or the like, is arranged between the wafer 105.1 and the last lens element 109.
  • an immersion bath of the immersion medium 1 10.1 on the one hand downwardly delimited at least by the part of the wafer 105.1 to be actually exposed.
  • the lateral limitation on the immersion bath is provided at least partially by an immersion frame 1 10.2 (typically also called an immersion hood).
  • At least the part of the last lens element 109 optically used during exposure and the part of the last lens element 109 lying on the outer side of the objective 104 is immersed in the immersion bath such that the last lens element 109 is an immersion element in the sense of the present invention.
  • the path of exiting from the last lens element 109 between the last lens element 109 and the wafer is located exclusively within the immersion medium 1 10.
  • NA > 1 Due to the refractive index of the immersion medium lying above the value 1 a numerical aperture NA > 1 is achieved and the resolution is enhanced with respect to a conventional system with a gas atmosphere between the last lens element and the wafer.
  • a material is used for last lens element 109 that has a refractive index above the refractive index of quartz (SiO) or calcium fluoride (CaF) typically used for such lens elements.
  • the material of the last lens element 109 is a spinel.
  • other lens materials having a correspondingly high refractive index and being suitable for the respective wavelength may be used.
  • An example for such a lens material is LuAG (Lutetium aluminum garnet, for example Lu 3 AI 5 Oi 2 ).
  • the invention may also be used in the context of conventional quartz or calcium fluoride lenses.
  • another numerical aperture may be selected. With respect to a high resolution, however, the numerical aperture preferably has a value of at least 1.3.
  • the spinel used for the last lens element 109 is a considerably higher temperature sensitivity of the refractive index than conventional quartz or calcium fluoride lenses. Thus, it is necessary to keep the actual temperature distribution TE within the last lens element within narrow variation limits during operation in order to maintain a given setpoint temperature distribution TSE in order to at least reduce, preferably even minimize imaging errors resulting from corresponding variations in the refractive index of the last lens element 109.
  • a thermal attenuation device 11 1 is provided.
  • the thermal attenuation device 1 11 is described in further detail mainly with reference to the figures 2 to 9.
  • Figure 2 shows - partially in a highly schematic manner - a half-section of the wafer side end of the objective 104.
  • a maximum deviation ⁇ TE 1 imK from a given setpoint temperature distribution TSE of the last lens element 109 is achieved during operation of the microlithography device 101.
  • the imaging errors and imaging error variations, respectively, resulting from family induced deformation and thermally induced refractive index alterations may be kept sufficiently low in order to achieve a high imaging quality.
  • other, eventually higher maximum deviations are possible, in particular depending on the thermal deformation behavior and the thermal refractive index variation of the material used.
  • these maximum deviations do not exceed 10 mK since then a particularly high imaging quality may be achieved.
  • the given setpoint temperature distribution TSE may be arbitrarily selected. It may be selected such that the last lens element 109 in itself, at least one imaging error type, has a minimized imaging error. However, it may also be selected such that the last lens element 109, at this setpoint temperature distribution TSE, in itself for at least one imaging error type has an imaging error having a sufficient amount to reduce or even fully compensate a corresponding imaging error of the remaining optical elements of the optical element group 106 such that at least one imaging error type the overall imaging error of the objective 104 is minimized.
  • Such a minimization of the overall imaging error is known from EP 0 956 871 A1 (to Rupp), the entire disclosure of which is incorporated herein by reference.
  • the thermal attenuation device 1 11 comprises a plurality of active thermal attenuation control circuits as well as passive thermal attenuation components. Among others, it comprises as a first thermal attenuation control circuit a control circuit for specific control of the supply temperature of the immersion medium 1 10.1 to the immersion zone.
  • the first thermal attenuation control circuit 1 12 comprises a supply device 1 12.1 , a first temperature adjustment device 1 12.2, first temperature sensors 1 12.3 and a control device 1 11.1.
  • the supply device 1 12.1 provides the immersion medium 1 10.1 in a sufficient amount and a sufficient flow rate to the immersion zone 110.
  • a first temperature adjustment device 112.2 connected to the control device 1 11.1 is arranged shortly ahead of the access point of the immersion medium 1 10.1 to the immersion zone 1 10 and adjusts the temperature of the immersion medium 1 10.1 to a desired supply temperature TIF.
  • the first temperature sensors 1 12.3 are connected to the control device 1 11.1 via wireless and/or at least partially wire bound connections - not shown for reasons of better visibility.
  • the desired supply temperature TIF is established by the control device 11 1.1 the manner described in the following.
  • the first temperature sensors 112.3 being evenly distributed at the circumference of the immersion zone 1 10 and representing a first establishing device in the sense of the present invention the temperature of the immersion medium 110.1 at the circumference of the immersion zone 110 is detected.
  • the first temperature sensors 1 12.3 provide corresponding first temperature data to associated inputs 11 1.2 of the control device 1 11.1.
  • a measurement or establishment of a temperature or at least another parameter may be provided at a different location. From this temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter and the temperature of the immersion medium 110.1 at the circumference of the immersion zone 1 10 - the temperature of the immersion medium at the circumference of the immersion zone 1 10 may be estimated.
  • the control device 1 11.1 establishes an actual temperature distribution Tl within the immersion zone 110 by means of a stored first temperature behavior model of the immersion medium 1 10.1.
  • the first temperature behavior model hereby considers the actual supply temperature TIF of the immersion medium (provided to the control device 11 1.1 by the first temperature adjustment device 112.2), the flow rate of the immersion medium 1 10.1 (provided to the control device 1 11.1 by the supply device 112.1 ), the actual temperature distribution TE of the last lens element 109 (established in a manner described in further detail below) and the actual light power (provided to the control device by the illumination device 102).
  • the control device 1 1 1.1 establishes a first control value C for the temperature adjustment device 112.2 and/or the supply device 1 12.1.
  • the temperature adjustment device performs the adjustment of the supply temperature TIF and/or the supply device 112.1 performs adjustment of the flow rate in such a manner that the actual temperature distribution Tl approaches the setpoint temperature distribution TSI within the immersion medium 110.
  • Establishment of the supply temperature TIF may be performed as a function of an alteration ⁇ TIE within the actual temperature distribution Tl that is to be expected from the temperatures and parameters previously captured or established.
  • an alteration ⁇ TIE may be anticipated and counteracted prior to its (full) existence.
  • the actual temperature distribution Tl within the immersion medium 110.1 represents a parameter P influencing the temperature of the last lens element 109 since, due to a temperature gradient between the immersion medium 1 10.1 and the last lens element 109 a heat transfer occurs between the immersion medium 110.1 and the last lens element 109 leading to a temperature alteration in the last lens element 109.
  • the supply temperature TIF and/or the flow rate represent control parameters in the sense of the invention since they may be used to influence the temperature gradient between the immersion medium 1 10.1 and the last lens element 109 and the heat transfer between the immersion medium 1 10.1 and last lens element 109, respectively.
  • the temperature adjustment device 112.2 and/or the supply device 1 12.1 respectively represent influencing devices in the sense of the invention.
  • the given setpoint temperature distribution TSI within the immersion medium 110.1 may be selected in an arbitrary manner. It may be set in a static manner such that, in case of an existence of the setpoint temperature distribution TSI within the immersion medium 110.1 and in case of an existence of the setpoint temperature distribution TSE within the last lens element 109, no temperature gradient and, consequently, no heat transfer exists between the last lens element 109 and the immersion medium 1 10.
  • the last lens element 109 is in its setpoint state in this case, no considerable thermal disturbance is introduced into the last lens element 109 by the immersion medium 110 controlled in this manner.
  • the last lens element 109 in this case is in a state deviating from its setpoint state a temperature gradient results between the last lens element 109 and the immersion medium 110.1 counteracting the actual deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 such that via the immersion medium 110.1 controlled in this manner an attenuation effect is achieved.
  • the setpoint temperature distribution TSI within the immersion medium 1 10.1 may also be selected as a function of the actual temperature distribution TE of the last lens element 109 in such a manner that, in case of an existence of the setpoint temperature distribution TSI within the immersion medium 110.1 , a given temperature gradient and, thus, a given heat transfer is provided between the last lens element 109 and the immersion medium 1 10.1.
  • the temperature gradient between the last lens element 109 and the immersion medium 1 10.1 is then preferably selected in such a manner that it counteracts a deviation of the actual temperature distribution TE of the last lens element 109 from the setpoint temperature distribution TSE of the last lens element 109 such that here as well a thermal attenuation effect is achieved via the immersion medium 1 10.1 controlled in this manner.
  • the temperature gradient between the last lens element 109 and the immersion medium 110.1 set via the immersion medium 110.1 is preferably selected the higher the higher the deviation of the actual temperature distribution TE is from the setpoint temperature distribution TSE of the last lens element 109. In other words, in this manner a dynamic thermal attenuation of deviations between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 may be achieved.
  • the immersion medium 110.1 controlled in this manner does not introduce a considerable thermal disturbance into the last lens element 109. If this is not the case, the counteraction via the immersion medium 1 10.1 controlled in this manner is the stronger the higher the deviation is between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109.
  • the thermal attenuation device 11 1 further comprises as a second thermal attenuation control circuit a control circuit 113 for a specified control of the temperature TA and/or the humidity HA and/or the flow rate VA of the gas atmosphere 1 13.1 contacting the free surface 1 10.3 of the immersion medium 1 10.1.
  • the second thermal attenuation control circuit 113 comprises a second supply device 1 13.2 former gas atmosphere 1 13.1 and the control device 1 1 1.1.
  • the second supply device 113.2 via at least one supply line, provides a gas in a sufficient amount where with corresponding temperature and flow rate at the free surface 1 10.3 of the immersion medium 110.1.
  • the second supply device 113.2 adjusts the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.12 desired values established by the control device 1 11.1 in the manner described in the following.
  • the control device 11 1.1 in the manner described above establishes the actual temperature distribution Tl within the immersion medium 1 10.1 within the immersion zone 1 10. From the actual temperature distribution Tl within the immersion medium 1 10.1 the control device 1 11.1 then establishes, as a function of a given setpoint temperature distribution TSI within the immersion medium, a second control value C for the second supply device 113.2. By means of the second control value C the second supply device 1 13.2 performs in the adjustment of the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.1.
  • the adjustment may be provided in such a manner that evaporation of the immersion medium at the fray surface 1 10.3 of the immersion medium 110.1 is minimized.
  • the control via the second thermal attenuation control circuit 113 is subordinate to the control via the first thermal attenuation control circuit 1 12.
  • an active use of the thermal disturbance via the evaporation induced heat transfer from the immersion medium 110.1 may be provided in order to counteract deviations between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 and, thus, to achieve a thermal attenuation effect.
  • a certain evaporation rate may exist which, depending on the direction of the deviation to be attenuated between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109, may then be increased or reduced in order to approach the actual temperature distribution Tl of the immersion medium 110.1 to a correspondingly changed setpoint temperature distribution TSI of the immersion medium, i.e. to raise or lower, respectively, the temperature, and, thus to counteract, via the temperature gradient between the immersion medium 110.1 and the last lens element 109, the deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109.
  • the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.1 represent control parameters CP in the sense of the invention since, via these parameters, the temperature gradient between the immersion medium 110.1 and the last lens element 109 and the heat transport between the immersion medium 110.1 and the last lens element 109, respectively, may be influenced. Accordingly, the second supply device 1 13.2 also represents an influencing device in the sense of the invention.
  • the given setpoint temperature distribution TSI within the immersion medium 110.1 may be selected arbitrarily in the manner as it has been described above.
  • the free surface 1 10.3 may be the entire or a part of the free surface of the immersion medium 1 10.1.
  • the thermal attenuation device 1 11 further comprises as a third thermal attenuation control circuit a control circuit in 114 for a specified direct influencing of the temperature of the last lens element 109.
  • the third thermal attenuation control circuit 114 comprises a plurality of second temperature adjustment devices in the form of Peltier elements 1 14.1 evenly distributed at the circumference of the last lens element 109, second temperature sensors 114.2 and the control device 1 1 1.1.
  • the Peltier elements 114.1 connected to the control device 111.1 cool or heat the last lens element 109 - as will be explained in the following in greater detail - in such a manner that a deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element is counteracted and, thus, a thermal attenuation effect is achieved as well.
  • the second temperature sensors 114.2 and 1 14.3 By means of the second temperature sensors 114.2 and 1 14.3 evenly distributed at the last lens element 109 and representing a establishment device in a sense of the present invention the temperature of the last lens element 109 at the respective locations of the last lens element 109 is established.
  • the second temperature sensors 114.2 and 1 14.3 provide corresponding first temperature data to associated inputs 11 1.2 of the control device 11 1.1.
  • a measure meant or establishment of a temperature or of at least one other parameter may be provided at a different location. From this temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter and the temperature of the last lens element 109 - the temperature of the last lens element 109 may be estimated.
  • the control device 11 1.1 establishes an actual temperature distribution TE within the last lens element 109 by means of a stored first temperature behavior model of the last lens element 109.
  • the first temperature behavior model hereby considers the actual temperature distribution Tl of the immersion medium 1 10.1 and the actual light power (provided to the control device 1 11.1 by the illumination device 102).
  • the control device 1 11.1 From the actual temperature distribution TE within the last lens element 109, depending on a given setpoint temperature distribution TSE within the last lens element 109, the control device 1 11.1 establishes a third control value C for the Peltier elements 1 14.1.
  • the temperature of the surface of the Peltier elements 1 14.1 directed towards the surface of the last lens element 109 is adjusted. Accordingly, Peltier elements 1 14.1 heat or cool the surface of the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
  • the temperature of the surface of the Peltier elements 1 14.1 directed towards the surface of the last lens element 109 thus represents a control parameter CP since, via this temperature the heat transfer between the Peltier elements 1 14.1 and the last lens element 109 may be influenced. Accordingly, the Peltier elements 1 14.1 represent influencing devices in the sense of the invention.
  • the third thermal attenuation control circuit 114 may comprise a (further) second temperature adjustment device in the form of a resistance heating device 1 14.4 in the optically unused area of the lens element 109.
  • the resistance heating device 1 14.4 connected to the control device 1 1 1.1 heats the last lens element 109 - as will be explained in further detail below - in such a manner that a deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 is counteracted and, thus, a thermal attenuation effect is achieved as well.
  • Figure 3 in a schematic view corresponding to detail D of Figure 2, shows a resistance heating device 1 14.4 of a further embodiment of the microlithography device 101 according to the invention.
  • the resistance heating device 114.4 comprises a plurality of electrically conductive elements 1 14.5 suitably connected to each other and to the control device 1 11.1.
  • the electrically conductive elements 114.5 are embedded within the surface of the last lens element 109.
  • the electrically conductive elements 1 14.5 may be fabricated, for example, by placing a metal powder (later forming the electrically conductive elements 1 14.5) on the surface of the last lens element 109 in a desired configuration.
  • the metal powder is that heated up, e.g. using a infrared laser, to such an extent that the metal powder melts and connects to form the electrically conductive elements. Furthermore, due to its higher density, the molten metal powder sinks into the locally molten matrix of the last lens element 109.
  • the electrically conductive elements 1 14.5 are a fully embedded within the matrix on the last lens element 109 as it is shown in Figure 3. However, it will be appreciated that, with other embodiments of the invention, it may also be provided that the electrically conductive elements 114.5 are only partially surrounded by the matrix of the last lens element 109. In this case a protective layer (as it is indicated in Figure 3 by the dashed contour 1 14.6) may be provided. This protective layer 114.6 may protect the electrically conductive elements 1 14.5 against the aggressive immersion medium 110.1.
  • the protective layer 1 14.6 may for example be a quartz (SiO) layer that has been applied via a sputter process, a CVD (chemical vapor deposition) process or the like. It will be further appreciated that the protective layer 114.6 may eventually comprise the electrical connections between the electrically conductive elements 1 14.5 as well as the electrical connections to the control device 1 1 1.1.
  • the temperature of the last lens element 109 is captured at the respective locations of the last lens element 109.
  • the second temperature sensors 114.2 and 1 14.3 provide corresponding first temperature data to the associated inputs 1 11.2 of the control device 1 11.1.
  • a measurement or establishment of a temperature or at least another parameter may be provided at a different location. From this measured or established temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter/temperature and the temperature of the last lens element 109 - the temperature of the last lens element 109 may be estimated.
  • the control device 11 1.1 establishes an actual temperature distribution TE within the last lens element 109 by means of a stored first temperature behavior model of the last lens element 109.
  • the first temperature behavior model hereby considers the actual temperature distribution Tl of the immersion medium 1 10.1 and the actual light power (provided to the control device 1 11.1 by the illumination device 102).
  • the control device 1 11.1 From the actual temperature distribution TE within the last lens element 109, depending on a given setpoint temperature distribution TSE within the last lens element 109, the control device 1 11.1 establishes a third control value C for the resistance heating device 114.4.
  • the third control value C via a corresponding electric current within the electrically conductive elements 1 14.5, the temperature of the resistance heating device 1 14.4 is adjusted. Accordingly, the resistance heating device 114.4 heats the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
  • the resistance heating device 1 14.4 may be segmented in an arbitrarily fine manner, i.e. separated in an arbitrary number of segments selectively controllable by the control device 1 11.1. By this means it is possible to achieve an arbitrary desired temperature distribution within the resistance heating device 114.4.
  • the temperature of the electrically conductive elements 114.5 thus represents a control parameter CP in the sense of the invention since the heat transfer between the electrically conductive elements 114.5 and the last lens element 109 may be influenced by this temperature.
  • the electrically conductive elements 114.5 respectively represent an influencing device in the sense of the invention.
  • Figure 4 in a schematic view corresponding to detail D of Figure 2, shows a resistance heating device 214.4 of a further embodiment of the microlithography device 101 according to the invention.
  • the resistance heating device 214.4 may be used instead of the resistance heating device 114.4 of Figure 3.
  • the resistance heating device 214.4 comprises a plurality of electrically conductive elements 214.5 suitably connected to each other and to the control device 1 11.1.
  • the electrically conductive elements 214.5 are arranged on the surface of the last lens element 109 then and embedded within a protective layer 214.6.
  • the electrically conductive elements 214.5 may be applied to the surface all the last lens element 109 in the desired configuration using a thin layer technique and/or a thick layer technique. Subsequently, they may be coated with the protective layer 214.6.
  • the protective layer 214.6 may be an arbitrary protective layer.
  • the protective layer 214.6 may be a quartz (SiO) layer that has been applied via a sputter process, a CVD (chemical vapor deposition) process or the like.
  • the protective layer 214.6 may also comprise a polymeric material.
  • a polyimide (Pl) material (such as the material sold by DuPont® under the name Kapton®) is particularly suitable.
  • the protective layer 214.6 may be formed by a polyimide carrier film to which the electrically conductive elements 214.5 are applied in the desired configuration. This carrier film may then be applied to the last lens element 109 and, for example, the adhesively connected to the last lens element 109.
  • the protective layer 214.6 holds a plurality of further temperature sensors 214.2 connected to the control device 1 11.1. These temperature sensors 214.2 (in addition or as an alternative to the temperature sensors 1 14.2, 1 14.3) capture the temperature of the last lens element 109 at the respective location. The temperature sensors 214.2 provide corresponding first temperature data to the associated inputs 1 11.2 of the control device 1 11.1.
  • the functionality on the resistance heating device 214.4 is identical to the functionality of the resistance heating device 1 14.4 as it has been described above. Thus, it is here only referred to the explanations given above. In particular, the resistance heating device 214.4 again may be segmented in an arbitrarily fine manner.
  • FIG. 5 in a schematic view corresponding to detail D of Figure 2, shows a radiation heating device 314.4 of a further embodiment of the microlithography device 101 according to the invention.
  • the radiation heating device 314.4 may be used instead of the resistance heating device 114.4 of Figure 3.
  • the radiation heating device 314.4 comprises a plurality of heating elements 314.5 connected to the control device 11 1.1.
  • the heating elements 314.5 are arranged at the immersion frame 1 10.2.
  • the heating elements 314.5 under the control of the control device 1 11.1 emit targeted infrared radiation IR towards the last lens element 109 in order to heat the last lens element 109.
  • the heating elements 314.5 may be formed by so-called hollow core fibres guiding the infrared radiation of a coupled infrared radiation source of the control device 11 1.1 towards the last lens element 109.
  • the functionality of the radiation heating device 314.4 largely corresponds to the functionality of the resistance heating device 114.4 as it has been described above. Thus, is here mainly referred to the explanations given above.
  • the control device 11 1.1 establishes a third control value C for the radiation heating device 314.4.
  • the third control value C the radiation intensity of the heating elements 314.5 is adjusted. Accordingly, the heating elements 314.5 heat the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
  • the radiation intensity of the heating elements 314.5 thus represents a control parameter CP in the sense of the invention since the heat transfer between the heating elements 314.5 and the last lens element 109 may be influenced by this radiation intensity.
  • the heating elements 314.5 respectively represent an influencing device in the sense of the invention.
  • the radiation heating device 314.4 may allow an arbitrarily finely segmented radiation of the last lens element 109.
  • the radiation heating device 314.4 may comprise an arbitrary number of segments selectively controllable by the control device 11 1.1. By this means it is possible to provide an arbitrary radiation intensity distribution via the radiation heating device 314.4.
  • the thermal attenuation control device 1 11 further comprises a first shielding in the form of a thermally insulating coating 1 15 of the last lens element 109, said coating 115 forming a thermal decoupling device in the form of a first passive thermal attenuation component of the attenuation control device 11 1.
  • the coating 1 15 extends over the section 109.1 of the surface of the last lens element 109 that it is located adjacent to the immersion of medium 1 10.1 and is optically unused when projecting the projection pattern onto the wafer 105. Via this thermally insulating coating 1 15 the last lens element 109 and the immersion zone 1 10 with the immersion medium 1 10.1 are section-wise thermally decoupled such that, at least external to the section 109.2 of the surface of the last lens element 109 optically used, thermal disturbances in the immersion medium 110.1 are prevented from directly propagating within the last lens element 109.
  • the coating 1 15 may be of any suitable material or material combination providing sufficient thermal insulation properties.
  • the coating 115 comprises a layer of an organic material, here a polyurethane (PU) resin, that has been applied to the surface section 109.1 of the last lens element 109 via a suitable technique such as, for example, a casting technique, a varnishing technique etc. After its appliance the surface of the organic layer may be treated using any known surface treatment technique in order to provide a desired surface roughness.
  • PU polyurethane
  • Part or all of the surface of the organic layer not contacting the last lens element 109 may be provided with a suitable reflective coating.
  • This reflective coating reflects projection light scattered by the surface of the wafer 105.1 and/or the immersion medium 110.1 and/or the immersion frame 110.2 etc., thus, preventing (long-term) damage to the organic layer of the coating 1 15 that might otherwise be caused by such scattered projection light.
  • the shielding 115 may be designed in any suitable way to provide the thermal decoupling of the last lens element 109 from its environment, in particular the immersion medium.
  • it may be a simple single-layer or multi-layer thermal insulation.
  • it may also be a combination of two or more layers with at least one highly thermally conductive layer and at least one thermally insulating layer.
  • the highly thermally conductive layer may serve to transport heat towards the circumference of the last lens element (to a heat sink eventually provided at this location) and, thus, to prevent or reduce, respectively, its introduction into the last lens element.
  • the shielding 1 15 may have a hydrophobic surface.
  • This hydrophobic surface may eventually be formed by a separate layer only provided for this reason.
  • at least largely situations may be avoided wherein separate drops or droplets of the immersion medium 1 10 accumulate at the (eventually coated) surface of the last lens element 109.
  • Such drops or droplets of immersion medium might otherwise evaporate and cause formation of a locally concentrated strong heat sink leading to a strong locally concentrated thermal disturbance in the last lens element 109.
  • Such drops or droplets of immersion medium 110.1 may for example form at the surface areas of the last lens element 109 that are only temporarily wetted with the immersion medium 1 10.1 (e.g. due to wafer movement induced immersion medium level alterations during operation of the microlithography device 101 ).
  • the hydrophobic surface in an advantageous manner, hinders formation of such drops or droplets of immersion medium 1 10.1 on the (eventually coated) surface of the last lens element 109.
  • FIG. 6 in a schematic view corresponding to detail D of Figure 2, shows a thermal decoupling device in the form of a thermal shielding 415 of a further embodiment of the microlithography device 101 according to the invention.
  • the shielding 415 may be used instead of the shielding 115 of Figure 2.
  • the shielding 415 has a multi-layer design as it has been mentioned above.
  • the shielding 415 comprises a combination of a thermally insulating first layer 415.1 located immediately adjacent to the last lens element 109 and a highly thermally conductive second layer 415.2 located immediately adjacent to the first layer 415.1. Furthermore, a hydrophobic third layer 415.3 is applied to the outer surface of the second layer 415.2.
  • the thermally insulating the first layer 415.1 comprises a spacer body 415.4.
  • the spacer body 415.4 is of sufficient rigidity to keep its shape under any normal operating conditions of the microlithography device 101.
  • the spacer body 415.4 under normal operating conditions, provides a defined distance between the surface of the last lens element 109 and the second layer 415.2.
  • separate spacer elements may be provided instead of a single spacer body.
  • the spacer body 415.4 is permeable to a fluid (i.e. a gas and/or a liquid).
  • a fluid i.e. a gas and/or a liquid
  • an open-celled foam may be used to form the spacer body 415.4.
  • an interstice is defined forming the first layer 415.1.
  • the interstice forming the first Iayer 415.1 is filled with a fluid (such as a gas or a liquid) of low thermal conductivity.
  • the interstice 415.1 may be (continuously or intermittently) rinsed with a suitably temperature adjusted fluid to guarantee the desired thermally insulating effect of the first layer 415.1.
  • a circumferential sealing element 415.5 is provided between the last lens element 109 and the second layer 415.2.
  • the sealing element 415.5 may be a ring formed by an adhesive which, in addition, provides fixation on the second layer of 415.2 with respect to the last lens element 109.
  • the second layer 415.2 due to its high thermal conductivity, guarantees a good heat transfer in the radial direction R of the last lens element 109.
  • thermal disturbances induced by the immersion medium 1 10.1 are rapidly reduced or even fully compensated by a correspondingly high heat transfer within the second layer 415.2. Consequently, such thermal disturbances, if at all, may propagate only to a reduced extent towards the last lens element 109. In other words, an efficient thermal attenuation effect is achieved.
  • a further reduction of the propagation of such thermal disturbances is provided by the thermally insulating first layer 415.1.
  • the shielding 415 forming a thermal decoupling device in the sense of the invention the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 1 10.1.
  • a stabilizing device 415.6 may be provided at the outer circumference of the second layer 415.2.
  • the stabilizing device may have a high heat capacity and, thus, a stable temperature during operation of the microlithography device 101.
  • the stabilizing device 415.6 may be formed by a circuit of a heat carrier medium.
  • the hydrophobic third layer 415.3 again, reduces the likelihood of the formation of local heat sinks due to the evaporation of accumulated drops or droplets of immersion medium 1 10.1 as it has been described above.
  • the hydrophobic third layer of 415.3 may, for example, be formed by a polyimide (Pl) material as it has been mentioned above.
  • FIG 7 in a schematic view corresponding to detail D of Figure 2, shows a thermal shielding 515 of a further embodiment of the microlithography device 101 according to the invention.
  • the shielding 515 may be used instead of the shielding 115 of Figure 2 or instead of the shielding 415 of Figure 6.
  • the shielding 515 has a multi-layer design as it has been mentioned above.
  • the shielding 515 comprises a combination of a thermally insulating first layer 515.1 located immediately adjacent to the last lens element 109 and a second layer 515.2 located immediately adjacent to the first layer 515.1
  • the thermally insulating the first layer 515.1 comprises a plurality of spacer elements 515.4 evenly distributed at the circumference of the last lens element 109.
  • the spacer elements 515.4 are of sufficient rigidity to keep their shape under any normal operating conditions of the microlithography device 101.
  • the spacer elements 515.4 under normal operating conditions, provide a defined distance between the surface of the last lens element 109 and the second layer 515.2.
  • the spacer elements 515.4 define an interstice forming the first layer 515.1.
  • the interstice forming the first layer 515.1 is filled with a fluid (such as a gas or a liquid) of low thermal conductivity.
  • a fluid such as a gas or a liquid
  • the interstice 515.1 may be (continuously or intermittently) rinsed with a suitably temperature adjusted fluid to guarantee the desired thermally insulating effect of the first layer 515.1.
  • a circumferential sealing element 515.5 is provided between the last lens element 109 and the second layer 515.2.
  • the sealing element 515.5 may be a ring formed by an adhesive which, in addition, provides fixation on the second layer of 515.2 with respect to the last lens element 109.
  • the second layer 515.2 again provides a good heat transfer in the radial direction R of the last lens element 109.
  • thermal disturbances induced by the immersion medium 1 10.1 are rapidly reduced or even fully compensated by a correspondingly high heat transfer within the second layer 515.2. Consequently, such thermal disturbances, if at all, may propagate only to a reduced extent towards the last lens element 109. In other words, an efficient thermal attenuation effect is achieved.
  • a further reduction of the propagation of such thermal disturbances is provided by the thermally insulating first layer 515.1.
  • the shielding 515 forming a thermal decoupling device in the sense of the invention the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 110.1.
  • the rapid heat transfer within the second layer 515.2 is achieved by providing a channel system 515.7 extending in the radial direction R within the second layer 515.2.
  • a stabilizing device in the form of a pumping and temperature adjusting device 515.6 provides a heat carrier medium circulation with a (preferably continuous) flow 515.8 of a heat carrier medium within the channel system 515.7.
  • the heat carrier medium of the flow 515.8 is adjusted by the stabilizing device 515.6 to have a defined temperature and/or flow rate.
  • the flow 515.8 initially runs, in a first channel 515.9 of the second layer 515.2, in the radial direction R towards a redirecting area 515.10 at the inner circumference of the second layer 515.2. At the redirecting area 515.1 the flow 515.8 is redirected in order to flow back, within a second channel 515.1 1 of the second layer 515.2, towards the outer circumference of the second layer 515.2. Leaving the second channel 515.11 the flow 515.8 returns to the stabilizing device 515.6 where it is again adjusted in temperature and/or flow rate and re- circulated to the heat carrier medium circulation.
  • the channel system 515.9 to 515.1 1 is formed by a thin hollow body 515.2 and a thin rib 515.12.
  • the rib 515.12 is located within the hollow body 515.2 and extends in the radial direction R and in the circumferential direction of the last lens element 109.
  • the rib 515.12 separates the first channel 515.9 and the second channel 515.1 1.
  • the second channel 515.11 via which the heat carrier medium is again transported radially outwards towards the stabilizing device 515.6, is preferably located on the side facing away from the last lens element 109 in order to achieve a rapid removal of thermal disturbances from the area of the last lens element 109.
  • any other suitable configuration of such a channel system providing such a rapid removal of thermal disturbances may be used.
  • a hydrophobic third layer may be provided at the outer surface of the second layer 515.2 in order to reduce the likelihood of the formation of local heat sinks due to the evaporation of accumulated drops or droplets of immersion medium 1 10.1 as it has been described above.
  • the stabilizing device 515.6 may be connected to and controlled by the control device 1 11.1.
  • the shielding 515 then forms an active thermal decoupling device in the sense of the invention.
  • the stabilizing device 515.6 is controlled in such a manner that a given temperature distribution, preferably an even temperature, is substantially maintained (throughout the operation of the microlithography device 101 ) at the surface of the second layer 515.2 (forming a thermal shielding element in the sense of the invention) facing the last lens element 109.
  • a given temperature distribution preferably an even temperature
  • further temperature sensors 514.2 connected to the control device 1 11.1 may be provided at this surface.
  • the control device 1 11.1 may then use the temperature data provided by the temperature sensors 514.2 to control the stabilizing device 515.6 in the manner described above.
  • FIG 8 in a schematic view corresponding to detail D of Figure 2, shows a thermal shielding 615 of a further embodiment of the microlithography device 101 according to the invention.
  • the shielding 615 may be used instead of the shielding 115 of Figure 2, instead of the shielding 415 of Figure 6 or instead of the shielding 515 of Figure 7.
  • the shielding 615 is formed by a (preferably continuous) flow 615.13 of a heat carrier medium 615.14 provided within the part 110.4 of the gap between the last lens element 109 and the immersion frame 110.2 that is not filled with the immersion medium 1 10.1.
  • the flow 615.13 is provided by a stabilizing device in the form of a pumping and temperature adjusting device 615.6 that provides the heat carrier medium with a defined temperature and flow rate.
  • the flow 615.13 initially runs in the radial direction R towards a contact zone 615.14. Within this contact zone 615.15 the heat carrier medium 615.14 contacts and eventually mixes with the immersion medium 110.1. In the area of the contact zone 615.5 a channel 615.16 is provided within the immersion frame 1 10.2. The channel 615.16 opens towards the contact zone 615.5. Via this channel 615.16 the heat carrier medium 615.14 and, eventually, part of the immersion medium 110.1 (eventually mixed with the heat carrier medium 615.14) are drawn off from the gap between the last lens element 109 and the immersion frame 110.2 and re-circulated back to the stabilizing device 615.6.
  • the stabilizing device 615.6 if necessary, the fraction of the immersion medium 1 10.1 drawn off together with the heat carrier medium 615.14 is separated from the heat carrier medium 615.14.
  • the stabilizing device 615.6 re-adjusts the temperature and flow rate of the heat carrier medium 615.4 and re-circulates to the heat carrier medium circulation.
  • the stabilizing device 615.6 also provides the immersion medium 1 10.1 to the immersion zone 1 10 at the desired flow rate.
  • the flow rate of the immersion medium 110.1 provided to the immersion zone 1 10 and the flow rate of the heat carrier medium 615.14 provided to the part 1 10.4 of the gap between the last lens element 109 and the immersion frame 110.2 as well as the flow rate within the channel 615.16 are mutually adapted to each other in order to achieve the configuration as described above (i.e. with the immersion medium 110.1 and the heat carrier medium 615.14 contacting in the contact zone 615.15).
  • these flow rates are mutually to adapted each other in order to avoid undesired pressure fluctuations within the area of the last lens element 109.
  • the flow 615.13 provides a good heat transport away from the last lens element 109 in the radial direction R of the last lens element 109.
  • thermal disturbances induced by the immersion medium 1 10.1 or the immersion frame 110.2 are rapidly reduced or even fully compensated by a correspondingly high heat transport provided by the flow 615.13.
  • thermal disturbances if at all, may propagate only to a reduced extent towards the last lens element 109.
  • an efficient thermal attenuation effect is achieved.
  • a further reduction of the propagation of such thermal disturbances may be provided by a thermally insulating first layer on the last lens element as it is indicated by the dashed contour 615.1 in Figure 8.
  • the shielding 615 forming a thermal decoupling device in the sense of the invention the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 110.1.
  • the stabilizing device 615.6 may be connected to and controlled by the control device 1 11.1. Thus, it is possible to actively control the thermal attenuation effect on the shielding 615.
  • the thermal attenuation device 1 11 further comprises a ring shaped second shielding 1 16 arranged between the holder 117 of the last lens element 109 and the holder of 1 18 on the penultimate lens element 108 and forming a second passive thermal attenuation component and, thus, a thermal decoupling device in the sense of the invention.
  • the second shielding 116 extends from the connection area of the two holders 117 and 1 18 (to the housing of the objective 104) up to the section 109.3 on the surface of the last lens element 109 that is optically unused during projecting the projection pattern onto the wafer 105.
  • the second shielding 116 further serves as the carrier for the Peltier elements 114.1.
  • the second shielding 116 as shown in Figure 8 consists of a highly thermally conductive material.
  • the second shielding 1 16 is connected to a temperature-stabilized intermediate element 1 19 which is, via a ring channel 1 19.1 , passed through with a heat carrier medium , e.g. water, that is held at a constant temperature via a heat carrier medium source 1 19.2.
  • a heat carrier medium e.g. water
  • the second shielding 116 again may be designed in any suitable way.
  • it may also be designed as a simple single-layer or multi-layer thermal insulation similar to the variants of the first shielding described above.
  • it may also be a combination of two or more layers comprising at least one highly thermally conductive layer and at least one thermally insulating layer.
  • a correspondingly insulating layer may be formed on the side of the second shielding 116 facing the holder 1 17.
  • Figure 9 shows a block diagram of a preferred embodiment of the optical imaging method according to the invention which may be executed with the microlithography device 101.
  • step 120.1 execution of the method starts.
  • step 120.2 the components of the microlithography device 101 are mutually positioned with respect to each other such that the configuration described above is achieved.
  • a step 120.3 at least a part of the projection pattern on the mask 103.1 is projected onto the wafer 105.1 in the matter as it has been described above.
  • a thermal attenuation of fluctuations in the temperature distribution of the last lens element 109 induced by the environment of the last lens element, in particular by the immersion medium 1 10.1 is provided via the thermal attenuation device 11 1 as it has been described above.
  • a step 120.4 the corresponding temperatures are established via the temperature sensors 1 12.2, 1 12.3, 1 14.2, 114.3 as it has been described above. Furthermore, further parameters such as the actual supply temperature TIF of the immersion medium 110.1 , the flow rate of the immersion medium 1 10.1 and the actual light power of the illumination device 102 are established as it has been described above.
  • a step 120.5 the control device 1 11 establishes the actual temperature distribution Tl within the immersion medium 110.1 in the immersion zone 1 10 as well as the actual temperature distribution TE of the last lens element 109. This is done by means of the stored temperature behavior model and using the data established in step 120.3 as it has been described above. Furthermore, the control device 1 11 establishes the control values C for the separate influencing devices (e.g. temperature adjustment device 1 12.2, supply device 1 12.1 , second supply device 1 13.2, Peltier elements 114.1 etc.).
  • the separate influencing devices e.g. temperature adjustment device 1 12.2, supply device 1 12.1 , second supply device 1 13.2, Peltier elements 114.1 etc.
  • the temperature behavior model hereby represents the relation between the captured or otherwise established temperatures as well as further parameters (e.g. flow rate of the immersion medium 1 10.1 , light power of the illumination device 102 etc) and the temperature distribution to be expected within the respective object of the temperature behavior model (i.e. the last lens element 109 and the immersion medium 1 10.1 , respectively).
  • the respective part of the temperature behavior model may have been established for the respective object of the temperature behavior model (i.e. the last lens element 109 or the immersion medium 1 10.1 ) in an empiric manner and/or via simulation calculations.
  • the respective object of the temperature behavior model i.e. the last lens element 109 or the immersion medium 1 10.1
  • simulation calculations may be performed for regularly repeated situations during operation of the microlithography device 101 .
  • control parameters CP are influenced by controlling the respective influencing devices (e.g. temperature adjustment device 112.2, supply device 1 12.1 , second supply device 1 13.2, Peltier elements 114.1 etc.) via the control device 11 1.1 in the manner as it has been described above.
  • a step 120.7 it is checked if execution of the method is to be stopped. If this is the case, execution of the method is stopped in a step 120.8. Otherwise it is jumped back to step 120.3.
  • the invention has been described by means of an example where a plurality of active thermal attenuation control circuits 1 12, 1 13, 114 and passive thermal attenuation components 1 15, 116 are provided in combination.
  • the single active thermal attenuation control circuits and passive thermal attenuation components may each be used alone or in an arbitrary combination.
  • the invention has been described by means of an example where a part of the last lens element 109 is immersed in an immersion medium 110.1 during optical imaging.
  • the invention may also be used in the context of immersion systems wherein an immersion zone at least temporarily filled with an immersion medium (in addition or as an alternative to the immersion zone between the last lens element and the wafer) is located between two optical elements of the optical element group.
  • Such multiple immersion systems or double immersion systems are known for example from WO 2006/080212 A1 , WO 2004/019128 A2, WO 2006/051689 A1 , WO 2006/126522 A1 , WO 2006/121008 A1 and US 7,180,572 B1 , the entire disclosure of all of which is included herein by reference.
  • Figure 10 in a view corresponding to the view of Figure 2, schematically shows such a double immersion system which may be used in the microlithography device 101.
  • the lens element 109 is not located immediately adjacent to the wafer 105.1 but adjacent to a further optical element in the form of a lens element 709 located between the lens element 109 and the wafer 105.1.
  • the immersion zone 1 10 is located between the lens element 109 and the lens element 709 while a further immersion zone 710 filled with a further immersion medium 710.1 is located between the further lens element 709 and the wafer 105.1.
  • the thermal attenuation device 1 11 is configured in a manner as it has been described above in order to provide thermal attenuation of environment induced thermal disturbances tending to cause thermal disturbances within the temperature distribution of the lens element 109. It will be appreciated that a further thermal attenuation device may be provided to provide thermal attenuation of environment induced, in particular immersion medium induced thermal disturbances tending to cause thermal disturbances within the temperature distribution of the further lens element 709. This further thermal attenuation device may be designed in a manner similar to the thermal attenuation device 1 11. Furthermore, the thermal attenuation device 1 11 may also be designed to provide such thermal attenuation for the further lens element 709.
  • the immersion medium 110.1 may be identical with or different from the immersion medium 610.1. Any suitable immersion medium may be used. Examples of such immersion media are heavy water or heavy oxygen water such as D 2 O, D 2 O * , H 2 O * , wherein O * may comprise the isotopes O 16 , O 17 and O 18 . These immersion media may be mixed in an arbitrary ratio in order to achieve a desired refractive index in the respective immersion zone 1 10 and 710, respectively, and/or in order to achieve a desired relation between the refractive indices of the two immersion media and/or a desired relation between the refractive indices of the optical elements 109, 709 and one or both of the immersion media 1 10.1 , 710.1.
  • the present invention has been described by means of an example wherein the optical element group consists of refractive optical elements exclusively.
  • the invention in particular in the case of performing the imaging process at different wavelengths, may of course be used with optical element groups that comprise, alone or in an arbitrary combination, refractive, reflective or diffractive optical elements.

Abstract

An optical imaging device, in particular for use in microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone. The optical element group is adapted to project the projection pattern onto the substrate and comprises a plurality of optical elements with an immersion element to which the substrate is at least temporarily located adjacent to during operation. During operation, the immersion zone is located between the immersion element and the substrate and is at least temporarily filled with an immersion medium. According to the invention a thermal attenuation device is provided, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the immersion element induced by the immersion medium.

Description

OPTICAL IMAGING DEVICE WITH THERMAL ATTENUATION
BACKGROUND OF THE INVENTION
The present invention relates to an optical imaging device. The invention may be used in the context of microlithography used in fabricating microelectronic circuits. The invention further relates to an optical imaging method which may, among others, be performed with the optical imaging device according to the invention.
Especially in the area of microlithography, apart from the use of components having a high precision, it is necessary to keep the position and the geometry of the components of the imaging device, e.g. the optical elements such as lenses, mirrors and gratings, unchanged during operation to the highest possible extent in order to achieve a correspondingly high imaging quality. The tough requirements with respect to accuracy lying in a microscopic range in the area of a few nanometers are none the less a consequence of the permanent need to reduce the resolution of the optical systems used in fabricating microelectronic circuitry in order to push forward miniaturization of the microelectronic circuitry to be produced.
In order to achieve an increased resolution either the wavelength of light used may be reduced as it is the case with systems working in the extreme UV (EUV) range at working wavelengths in the area of 13 nm or the numerical aperture of the projection system used may be increased. One possibility to remarkably increase the numerical aperture above the value 1 is realized in so-called immersion systems, wherein an immersion medium having a refractive index larger than 1 is placed between an immersion element of the projection system and the substrate to be exposed. A further increase in the numerical aperture is possible with optical elements having a particularly high refractive index.
It will be appreciated that, in a so-called single immersion system, the immersion element (i.e. the optical element at least in part contacting the immersion medium in the immersed state) typically is the last optical element located closest to the substrate to be exposed. Here, the immersion medium typically contacts this last optical element and the substrate. In a so-called double immersion system, the immersion element does not necessarily have to be the last optical element, i.e. the optical element located closest to the substrate. In such double or multiple immersion systems, and immersion element may also be separated from the substrate by one or more further optical elements. In this case, the immersion medium the immersion element is at least partly immersed in may be placed, for example, between two optical elements of the optical system.
With the reduction of the working wavelength as well as with the increase of the numerical aperture not only the requirements with respect to the positioning accuracy and the dimensional accuracy of the optical elements used become more strict throughout the entire operation. Of course, the requirements with respect to the minimization of imaging errors of the entire optical arrangement increase as well.
The temperature distribution within the optical elements used and the deformation of the respective optical element eventually resulting therefrom as well as an eventual temperature related variation of the refractive index of the respective optical element is of course of particular importance in this context.
From EP 1 477 853 A2 (to Sakamoto), the entire disclosure of which is incorporated herein by reference, it is known, for a EUV system, to actively counteract heating of a mirror (exclusively usable in such systems) resulting from the incident light and to keep a temperature captured at a given location within the mirror actively within given limits. This happens via a temperature adjustment device located centrally on the backside of the mirror and comprising Peltier elements or the like to provide targeted cooling. This solution, on the one hand, has the disadvantage that it is not suitable for the use with refractive optical elements as they are used in particular with the immersion systems mentioned above since the central temperature adjustment device would then cover the area optically used. On the other hand, only the temperature of a single location within the mirror is reliably controlled in a more or less stationary state considering the light energy absorbed by the mirror. Further thermal influences of the environment, in particular non-stationary and/or locally varying thermal influences as they may be introduced by an immersion medium and as they may cause dynamic and local fluctuations in the temperature distribution within the mirror, respectively, remain unconsidered.
BRIEF SUMMARY OF THE INVENTION
It is thus an object of the present invention to provide an optical imaging device as well as an optical imaging method not showing these disadvantages or at least showing them to a lesser degree and, in particular, to allow in a simple manner compensation of local thermal environmental influences to the optical element besides the consideration of absorption effects of the projection light.
The present invention is based on the finding that such thermal environmental influences, in particular, influences originating from the immersion medium, in an immersion system may cause local fluctuations within the temperature distribution of the respective optical elements that are not negligible or even considerable in relation to the absorption effects of the projection light. According to the invention it has turned out that, on the one hand, the desired compensation of such thermal environmental influences is also possible with refractive systems and refractive optical elements, respectively, as they are used with immersion systems if a corresponding thermal attenuation is available reducing, besides the absorption related fluctuations, also fluctuations in the temperature distribution of the respective optical element induced by the environment of the respective optical element. To this end, with a variant with an immersion system, according to the invention, a thermal attenuation device is provided for an immersion element, said thermal attenuation device being adapted to provide, among others, a reduction of fluctuations in the temperature distribution of the immersion element induced by the immersion medium. By this means it is possible, besides accounting for absorption effects, to account for the local fluctuations within the temperature distribution of the immersion element in induced, among others, by the immersion medium.
The invention is furthermore also based on the finding that, in particular for refractive elements, a corresponding temperature behavior model, in particular accounting for non- stationary and/or local environmental influences, may be set up and used in an active control of the temperature distribution. With such a temperature behavior model who is possible to predict or estimate the temperature distribution which is, if at all, only hardly to the measured in the optically used area without disturbance to the imaging process, and to account for this predicted or estimated temperature distribution in the control of the temperature distribution.
An object of the present invention is thus an optical imaging device, in particular for use in microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone. The optical element group is adapted to project the projection pattern onto the substrate and comprises a plurality of optical elements with an immersion element to which the substrate is at least temporarily located adjacent to during operation. During operation, the immersion zone is located between the immersion element and the substrate and is at least temporarily filled with an immersion medium. According to the invention a thermal attenuation device is provided, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the immersion element induced by the immersion medium.
A further object of the present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, an immersion element of the optical element group being at least partly immersed in an immersion medium in the area of an immersion zone located adjacent to the substrate. According to the invention, via a thermal attenuation device, fluctuations in the temperature distribution TE of the immersion element induced by the immersion medium are reduced.
A further object of the present invention is an optical imaging device, in particular for microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate and an immersion zone, wherein the optical element group is adapted to project the projection pattern onto the substrate. The optical element group comprises a plurality of optical elements with at least one immersion element at least temporarily immersed in an immersion medium in the area of an immersion zone during operation. There is provided a thermal attenuation device, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the immersion element induced by the immersion medium, wherein the thermal attenuation device comprises at least one thermal decoupling device for at least partial thermal decoupling of the immersion element from at least a part of its environment.
A further object of the present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, an immersion element of the optical element group being at least partly immersed in an immersion medium in the area of an immersion zone. According to the invention, via a thermal attenuation device, fluctuations in the temperature distribution TE of the immersion element induced by the immersion medium are reduced, wherein by the thermal attenuation device that at least partial thermal decoupling of the immersion element from at least a part of its environment is provided. A further object over present invention is an optical imaging device, in particular for use in microlithography, comprising a mask device for receiving a mask comprising a projection pattern, a projection device with an optical element group, a substrate device for receiving a substrate. The optical element group is adapted to project the projection pattern onto the substrate and comprises a plurality of optical elements with at least one thermally controlled optical element. According to the invention a thermal attenuation device is associated to the thermally controlled optical element, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of the thermally controlled optical element, wherein the thermal attenuation device, for reducing temperature fluctuations within the thermally controlled optical element, accesses a temperature behavior model of the thermally controlled optical element.
A further object over present invention is an optical imaging method, in particular for use in microlithography, wherein a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, the optical elements comprising a thermally controlled optical element. According to the invention, via a thermal attenuation device, fluctuations within the temperature distribution TE of the thermally controlled optical element are reduced, wherein for reducing the temperature fluctuations within the thermally controlled optical element a temperature behavior model of the thermally controlled optical element is accessed.
Further preferred embodiment of the invention become apparent from the dependent claims and the following description of preferred embodiments given with reference to the appended drawings, respectively. All combinations of the features disclosed, whether explicitly recited in the claims or not, are within the scope of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a schematic representation of a preferred embodiment of an optical imaging device according to the invention with which a preferred embodiment of an optical imaging method according to the invention may be executed;
Figure 2 is a schematic partially sectional view of a part of the imaging device of Figure
1 ; Figure 3 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 4 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 5 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 6 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 7 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 8 is a schematic partially sectional view showing the detail D of Figure 2 for a further preferred embodiment of the optical imaging device according to the invention;
Figure 9 is a block diagram of a preferred embodiment of the optical imaging method according to the invention which may be executed with the optical imaging device of Figure 1 ;
Figure 10 is a schematic partially sectional view of a further preferred embodiment of the optical imaging device according to the invention. DETAILED DESCRIPTION OF THE INVENTION
In the following a preferred embodiment of the optical imaging device according to the invention and for a use in a microlithography process will be described with reference to Figures 1 to 9.
Figure 1 shows a schematic representation of a preferred embodiment of the optical imaging device according to the invention in the form of a microlithography device 101 operating with light in the UV range at a wavelength of 193 nm.
The microlithography device 101 comprises an illumination system 102, a mask device in the form of a mask table 103, and optical projection system in the form of an objective 104 having an optical axis 104.1 and a substrate device in the form of a wafer table 105. The illumination system 102 illuminates a mask 103.1 arranged on the mask table 103 with a projection light beam - not shown in further detail - having a wavelength of 193 nm. A projection pattern is formed on the mask 104.3 which is projected with the projection light beam via the optical elements arranged within the objective 104 onto a substrate in the form of a wafer 105.1 arranged on the wafer table 105.
The objective 104 comprises an optical element group 106 formed by a gay series of optical elements 107 to 109. The optical elements 107 to 109 are held within the housing 104.2 of the objective. Due to the working wavelength of 193 nm the optical elements 107 to 109 are refractive optical elements such as lenses or the like. Thereby, the last optical element 109 located closest to the wafer 105.1 during operation is a so called closing element or last lens element.
The microlithography device 101 is an immersion system. In an immersion zone 110, a liquid immersion medium 110.1 , for example highly purified water or the like, is arranged between the wafer 105.1 and the last lens element 109. Within the immersion zone 1 10 there is provided an immersion bath of the immersion medium 1 10.1 on the one hand downwardly delimited at least by the part of the wafer 105.1 to be actually exposed. The lateral limitation on the immersion bath is provided at least partially by an immersion frame 1 10.2 (typically also called an immersion hood). At least the part of the last lens element 109 optically used during exposure and the part of the last lens element 109 lying on the outer side of the objective 104 is immersed in the immersion bath such that the last lens element 109 is an immersion element in the sense of the present invention. Thus, the path of exiting from the last lens element 109 between the last lens element 109 and the wafer is located exclusively within the immersion medium 1 10.
Due to the refractive index of the immersion medium lying above the value 1 a numerical aperture NA > 1 is achieved and the resolution is enhanced with respect to a conventional system with a gas atmosphere between the last lens element and the wafer.
In order to achieve a numerical aperture with a value NA > 1.4 preferably a material is used for last lens element 109 that has a refractive index above the refractive index of quartz (SiO) or calcium fluoride (CaF) typically used for such lens elements. In the present embodiment the material of the last lens element 109 is a spinel. However, with other embodiments of the invention, other lens materials having a correspondingly high refractive index and being suitable for the respective wavelength may be used. An example for such a lens material is LuAG (Lutetium aluminum garnet, for example Lu3AI5Oi2). Furthermore, it will be appreciated that the invention may also be used in the context of conventional quartz or calcium fluoride lenses. Furthermore, it will be appreciated that another numerical aperture may be selected. With respect to a high resolution, however, the numerical aperture preferably has a value of at least 1.3.
The spinel used for the last lens element 109 is a considerably higher temperature sensitivity of the refractive index than conventional quartz or calcium fluoride lenses. Thus, it is necessary to keep the actual temperature distribution TE within the last lens element within narrow variation limits during operation in order to maintain a given setpoint temperature distribution TSE in order to at least reduce, preferably even minimize imaging errors resulting from corresponding variations in the refractive index of the last lens element 109.
It will be appreciated however that, in particular in the area of microlithography, with systems having optical elements made from quartz (SiO) or calcium fluoride (CaF), variations or fluctuations in the temperature distribution of the immersion elements may occur that are not negligible any more such that, for such systems as well, appliance of the present invention is of great advantage.
In order to meet these narrow variation limits around a given setpoint temperature distribution TSE, according to the invention, a thermal attenuation device 11 1 is provided. In the following the thermal attenuation device 1 11 is described in further detail mainly with reference to the figures 2 to 9. Figure 2 shows - partially in a highly schematic manner - a half-section of the wafer side end of the objective 104.
In the present example, thanks to the thermal attenuation device 1 10, a maximum deviation ΔTE = 1 imK from a given setpoint temperature distribution TSE of the last lens element 109 is achieved during operation of the microlithography device 101. By this means, the imaging errors and imaging error variations, respectively, resulting from family induced deformation and thermally induced refractive index alterations may be kept sufficiently low in order to achieve a high imaging quality. However, it will be appreciated that, with other variants of the invention, other, eventually higher maximum deviations are possible, in particular depending on the thermal deformation behavior and the thermal refractive index variation of the material used. Preferably, these maximum deviations do not exceed 10 mK since then a particularly high imaging quality may be achieved.
It will be appreciated in this context that the given setpoint temperature distribution TSE may be arbitrarily selected. It may be selected such that the last lens element 109 in itself, at least one imaging error type, has a minimized imaging error. However, it may also be selected such that the last lens element 109, at this setpoint temperature distribution TSE, in itself for at least one imaging error type has an imaging error having a sufficient amount to reduce or even fully compensate a corresponding imaging error of the remaining optical elements of the optical element group 106 such that at least one imaging error type the overall imaging error of the objective 104 is minimized. Such a minimization of the overall imaging error is known from EP 0 956 871 A1 (to Rupp), the entire disclosure of which is incorporated herein by reference.
The thermal attenuation device 1 11 comprises a plurality of active thermal attenuation control circuits as well as passive thermal attenuation components. Among others, it comprises as a first thermal attenuation control circuit a control circuit for specific control of the supply temperature of the immersion medium 1 10.1 to the immersion zone.
To this end, the first thermal attenuation control circuit 1 12 comprises a supply device 1 12.1 , a first temperature adjustment device 1 12.2, first temperature sensors 1 12.3 and a control device 1 11.1. Via at least one supply line the supply device 1 12.1 provides the immersion medium 1 10.1 in a sufficient amount and a sufficient flow rate to the immersion zone 110. A first temperature adjustment device 112.2 connected to the control device 1 11.1 is arranged shortly ahead of the access point of the immersion medium 1 10.1 to the immersion zone 1 10 and adjusts the temperature of the immersion medium 1 10.1 to a desired supply temperature TIF. The first temperature sensors 1 12.3 are connected to the control device 1 11.1 via wireless and/or at least partially wire bound connections - not shown for reasons of better visibility.
The desired supply temperature TIF is established by the control device 11 1.1 the manner described in the following. By means of the first temperature sensors 112.3 being evenly distributed at the circumference of the immersion zone 1 10 and representing a first establishing device in the sense of the present invention the temperature of the immersion medium 110.1 at the circumference of the immersion zone 110 is detected. The first temperature sensors 1 12.3 provide corresponding first temperature data to associated inputs 11 1.2 of the control device 1 11.1.
However, it will be appreciated that, instead of the direct measurement via the first temperature sensors 1 12.3 evenly distributed at the circumference of the immersion zone 110, a measurement or establishment of a temperature or at least another parameter may be provided at a different location. From this temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter and the temperature of the immersion medium 110.1 at the circumference of the immersion zone 1 10 - the temperature of the immersion medium at the circumference of the immersion zone 1 10 may be estimated.
From these first temperature data the control device 1 11.1 establishes an actual temperature distribution Tl within the immersion zone 110 by means of a stored first temperature behavior model of the immersion medium 1 10.1. As further parameters the first temperature behavior model hereby considers the actual supply temperature TIF of the immersion medium (provided to the control device 11 1.1 by the first temperature adjustment device 112.2), the flow rate of the immersion medium 1 10.1 (provided to the control device 1 11.1 by the supply device 112.1 ), the actual temperature distribution TE of the last lens element 109 (established in a manner described in further detail below) and the actual light power (provided to the control device by the illumination device 102).
From the actual temperature distribution Tl, depending on a given setpoint temperature distribution TSI within the immersion medium 1 10.1 , the control device 1 1 1.1 establishes a first control value C for the temperature adjustment device 112.2 and/or the supply device 1 12.1. By means of this first control value C the temperature adjustment device performs the adjustment of the supply temperature TIF and/or the supply device 112.1 performs adjustment of the flow rate in such a manner that the actual temperature distribution Tl approaches the setpoint temperature distribution TSI within the immersion medium 110.
Establishment of the supply temperature TIF may be performed as a function of an alteration ΔTIE within the actual temperature distribution Tl that is to be expected from the temperatures and parameters previously captured or established. In other words, using the temperature behavior model, such an alteration ΔTIE may be anticipated and counteracted prior to its (full) existence.
In the sense of the invention, the actual temperature distribution Tl within the immersion medium 110.1 represents a parameter P influencing the temperature of the last lens element 109 since, due to a temperature gradient between the immersion medium 1 10.1 and the last lens element 109 a heat transfer occurs between the immersion medium 110.1 and the last lens element 109 leading to a temperature alteration in the last lens element 109. Furthermore, the supply temperature TIF and/or the flow rate represent control parameters in the sense of the invention since they may be used to influence the temperature gradient between the immersion medium 1 10.1 and the last lens element 109 and the heat transfer between the immersion medium 1 10.1 and last lens element 109, respectively. Accordingly, the temperature adjustment device 112.2 and/or the supply device 1 12.1 respectively represent influencing devices in the sense of the invention.
It will be appreciated in this context that the given setpoint temperature distribution TSI within the immersion medium 110.1 may be selected in an arbitrary manner. It may be set in a static manner such that, in case of an existence of the setpoint temperature distribution TSI within the immersion medium 110.1 and in case of an existence of the setpoint temperature distribution TSE within the last lens element 109, no temperature gradient and, consequently, no heat transfer exists between the last lens element 109 and the immersion medium 1 10.
In other words, if the last lens element 109 is in its setpoint state in this case, no considerable thermal disturbance is introduced into the last lens element 109 by the immersion medium 110 controlled in this manner. However, if the last lens element 109 in this case is in a state deviating from its setpoint state a temperature gradient results between the last lens element 109 and the immersion medium 110.1 counteracting the actual deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 such that via the immersion medium 110.1 controlled in this manner an attenuation effect is achieved. The setpoint temperature distribution TSI within the immersion medium 1 10.1 may also be selected as a function of the actual temperature distribution TE of the last lens element 109 in such a manner that, in case of an existence of the setpoint temperature distribution TSI within the immersion medium 110.1 , a given temperature gradient and, thus, a given heat transfer is provided between the last lens element 109 and the immersion medium 1 10.1. The temperature gradient between the last lens element 109 and the immersion medium 1 10.1 is then preferably selected in such a manner that it counteracts a deviation of the actual temperature distribution TE of the last lens element 109 from the setpoint temperature distribution TSE of the last lens element 109 such that here as well a thermal attenuation effect is achieved via the immersion medium 1 10.1 controlled in this manner.
In this case the temperature gradient between the last lens element 109 and the immersion medium 110.1 set via the immersion medium 110.1 is preferably selected the higher the higher the deviation of the actual temperature distribution TE is from the setpoint temperature distribution TSE of the last lens element 109. In other words, in this manner a dynamic thermal attenuation of deviations between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 may be achieved.
If in this case the last lens element 109 is in its setpoint state the immersion medium 110.1 controlled in this manner does not introduce a considerable thermal disturbance into the last lens element 109. If this is not the case, the counteraction via the immersion medium 1 10.1 controlled in this manner is the stronger the higher the deviation is between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109.
The thermal attenuation device 11 1 further comprises as a second thermal attenuation control circuit a control circuit 113 for a specified control of the temperature TA and/or the humidity HA and/or the flow rate VA of the gas atmosphere 1 13.1 contacting the free surface 1 10.3 of the immersion medium 1 10.1.
The second thermal attenuation control circuit 113, to this end, comprises a second supply device 1 13.2 former gas atmosphere 1 13.1 and the control device 1 1 1.1. The second supply device 113.2, via at least one supply line, provides a gas in a sufficient amount where with corresponding temperature and flow rate at the free surface 1 10.3 of the immersion medium 110.1. The second supply device 113.2 adjusts the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.12 desired values established by the control device 1 11.1 in the manner described in the following.
The control device 11 1.1 in the manner described above establishes the actual temperature distribution Tl within the immersion medium 1 10.1 within the immersion zone 1 10. From the actual temperature distribution Tl within the immersion medium 1 10.1 the control device 1 11.1 then establishes, as a function of a given setpoint temperature distribution TSI within the immersion medium, a second control value C for the second supply device 113.2. By means of the second control value C the second supply device 1 13.2 performs in the adjustment of the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.1.
In each case, the adjustment may be provided in such a manner that evaporation of the immersion medium at the fray surface 1 10.3 of the immersion medium 110.1 is minimized. Preferably, this happens by adjusting the temperature of the gas atmosphere 113.1 in such a manner that it corresponds to the temperature of the immersion medium 110.1 at the free surface 110.3 and by adjusting the humidity of the gas atmosphere 113.1 to a sufficiently high value, preferably to a complete saturation, in order to avoid evaporation of the immersion medium 1 10.1 and, consequently, a heat transfer from the immersion medium 1 10.1.
In other words, with this variant, it is avoided that via an evaporation of the immersion medium 110.1 at the free surface 1 10.3 a thermal disturbance is introduced into the immersion medium and, thus, also into the last lens element 109.
The control via the second thermal attenuation control circuit 113 is subordinate to the control via the first thermal attenuation control circuit 1 12. However, it will be appreciated that, with other variants of the invention, eventually an active use of the thermal disturbance via the evaporation induced heat transfer from the immersion medium 110.1 may be provided in order to counteract deviations between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 and, thus, to achieve a thermal attenuation effect.
For example, in the setpoint state of the last lens element 109, a certain evaporation rate may exist which, depending on the direction of the deviation to be attenuated between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109, may then be increased or reduced in order to approach the actual temperature distribution Tl of the immersion medium 110.1 to a correspondingly changed setpoint temperature distribution TSI of the immersion medium, i.e. to raise or lower, respectively, the temperature, and, thus to counteract, via the temperature gradient between the immersion medium 110.1 and the last lens element 109, the deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109.
Here as well, the temperature and/or the humidity and/or the flow rate of the gas atmosphere 113.1 represent control parameters CP in the sense of the invention since, via these parameters, the temperature gradient between the immersion medium 110.1 and the last lens element 109 and the heat transport between the immersion medium 110.1 and the last lens element 109, respectively, may be influenced. Accordingly, the second supply device 1 13.2 also represents an influencing device in the sense of the invention.
It will be appreciated in this context that, here as well, the given setpoint temperature distribution TSI within the immersion medium 110.1 may be selected arbitrarily in the manner as it has been described above. Furthermore, it will be appreciated that the free surface 1 10.3 may be the entire or a part of the free surface of the immersion medium 1 10.1.
The thermal attenuation device 1 11 further comprises as a third thermal attenuation control circuit a control circuit in 114 for a specified direct influencing of the temperature of the last lens element 109.
To this end, the third thermal attenuation control circuit 114 comprises a plurality of second temperature adjustment devices in the form of Peltier elements 1 14.1 evenly distributed at the circumference of the last lens element 109, second temperature sensors 114.2 and the control device 1 1 1.1. The Peltier elements 114.1 connected to the control device 111.1 cool or heat the last lens element 109 - as will be explained in the following in greater detail - in such a manner that a deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element is counteracted and, thus, a thermal attenuation effect is achieved as well.
By means of the second temperature sensors 114.2 and 1 14.3 evenly distributed at the last lens element 109 and representing a establishment device in a sense of the present invention the temperature of the last lens element 109 at the respective locations of the last lens element 109 is established. The second temperature sensors 114.2 and 1 14.3 provide corresponding first temperature data to associated inputs 11 1.2 of the control device 11 1.1.
It will be appreciated here as well that, instead of the direct measurement via the temperature sensors 1 14.2, 114.3 evenly distributed at the last lens element 109, a measure meant or establishment of a temperature or of at least one other parameter may be provided at a different location. From this temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter and the temperature of the last lens element 109 - the temperature of the last lens element 109 may be estimated.
From these first temperature data the control device 11 1.1 establishes an actual temperature distribution TE within the last lens element 109 by means of a stored first temperature behavior model of the last lens element 109. As further parameters the first temperature behavior model hereby considers the actual temperature distribution Tl of the immersion medium 1 10.1 and the actual light power (provided to the control device 1 11.1 by the illumination device 102).
From the actual temperature distribution TE within the last lens element 109, depending on a given setpoint temperature distribution TSE within the last lens element 109, the control device 1 11.1 establishes a third control value C for the Peltier elements 1 14.1. By means of this third control value C the temperature of the surface of the Peltier elements 1 14.1 directed towards the surface of the last lens element 109 is adjusted. Accordingly, Peltier elements 1 14.1 heat or cool the surface of the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
In the sense of the invention, the temperature of the surface of the Peltier elements 1 14.1 directed towards the surface of the last lens element 109 thus represents a control parameter CP since, via this temperature the heat transfer between the Peltier elements 1 14.1 and the last lens element 109 may be influenced. Accordingly, the Peltier elements 1 14.1 represent influencing devices in the sense of the invention.
As shown in Figure 3, the third thermal attenuation control circuit 114, with other variants of the microlithography device 101 , in addition or as an alternative to the Peltier elements 1 14.1 , may comprise a (further) second temperature adjustment device in the form of a resistance heating device 1 14.4 in the optically unused area of the lens element 109. The resistance heating device 1 14.4 connected to the control device 1 1 1.1 heats the last lens element 109 - as will be explained in further detail below - in such a manner that a deviation between the actual temperature distribution TE and the setpoint temperature distribution TSE of the last lens element 109 is counteracted and, thus, a thermal attenuation effect is achieved as well.
Figure 3, in a schematic view corresponding to detail D of Figure 2, shows a resistance heating device 1 14.4 of a further embodiment of the microlithography device 101 according to the invention. As may be seen from Figure 3, the resistance heating device 114.4 comprises a plurality of electrically conductive elements 1 14.5 suitably connected to each other and to the control device 1 11.1. The electrically conductive elements 114.5 are embedded within the surface of the last lens element 109.
The electrically conductive elements 1 14.5 may be fabricated, for example, by placing a metal powder (later forming the electrically conductive elements 1 14.5) on the surface of the last lens element 109 in a desired configuration. The metal powder is that heated up, e.g. using a infrared laser, to such an extent that the metal powder melts and connects to form the electrically conductive elements. Furthermore, due to its higher density, the molten metal powder sinks into the locally molten matrix of the last lens element 109.
It may be provided that the electrically conductive elements 1 14.5 are a fully embedded within the matrix on the last lens element 109 as it is shown in Figure 3. However, it will be appreciated that, with other embodiments of the invention, it may also be provided that the electrically conductive elements 114.5 are only partially surrounded by the matrix of the last lens element 109. In this case a protective layer (as it is indicated in Figure 3 by the dashed contour 1 14.6) may be provided. This protective layer 114.6 may protect the electrically conductive elements 1 14.5 against the aggressive immersion medium 110.1. The protective layer 1 14.6 may for example be a quartz (SiO) layer that has been applied via a sputter process, a CVD (chemical vapor deposition) process or the like. It will be further appreciated that the protective layer 114.6 may eventually comprise the electrical connections between the electrically conductive elements 1 14.5 as well as the electrical connections to the control device 1 1 1.1.
As had already been explained, by means of the second temperature sensors 1 14.2 and 1 14.3 (see Figure 2) the temperature of the last lens element 109 is captured at the respective locations of the last lens element 109. The second temperature sensors 114.2 and 1 14.3 provide corresponding first temperature data to the associated inputs 1 11.2 of the control device 1 11.1.
It will be appreciated that, here as well, instead of the direct measurement via the temperature sensors 1 14.2, 114.3 evenly distributed over the last lens element 109, a measurement or establishment of a temperature or at least another parameter may be provided at a different location. From this measured or established temperature or parameter, in an estimation device, via a corresponding sufficiently accurate estimation - based on a sufficiently accurately known relation between this established parameter/temperature and the temperature of the last lens element 109 - the temperature of the last lens element 109 may be estimated.
From these first temperature data the control device 11 1.1 establishes an actual temperature distribution TE within the last lens element 109 by means of a stored first temperature behavior model of the last lens element 109. As further parameters the first temperature behavior model hereby considers the actual temperature distribution Tl of the immersion medium 1 10.1 and the actual light power (provided to the control device 1 11.1 by the illumination device 102).
From the actual temperature distribution TE within the last lens element 109, depending on a given setpoint temperature distribution TSE within the last lens element 109, the control device 1 11.1 establishes a third control value C for the resistance heating device 114.4. By means of this third control value C, via a corresponding electric current within the electrically conductive elements 1 14.5, the temperature of the resistance heating device 1 14.4 is adjusted. Accordingly, the resistance heating device 114.4 heats the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
It will be appreciated that the resistance heating device 1 14.4 may be segmented in an arbitrarily fine manner, i.e. separated in an arbitrary number of segments selectively controllable by the control device 1 11.1. By this means it is possible to achieve an arbitrary desired temperature distribution within the resistance heating device 114.4.
The temperature of the electrically conductive elements 114.5 thus represents a control parameter CP in the sense of the invention since the heat transfer between the electrically conductive elements 114.5 and the last lens element 109 may be influenced by this temperature. Thus, the electrically conductive elements 114.5 respectively represent an influencing device in the sense of the invention.
Figure 4, in a schematic view corresponding to detail D of Figure 2, shows a resistance heating device 214.4 of a further embodiment of the microlithography device 101 according to the invention. The resistance heating device 214.4 may be used instead of the resistance heating device 114.4 of Figure 3. As may be seen from Figure 4, the resistance heating device 214.4 comprises a plurality of electrically conductive elements 214.5 suitably connected to each other and to the control device 1 11.1. The electrically conductive elements 214.5 are arranged on the surface of the last lens element 109 then and embedded within a protective layer 214.6.
The electrically conductive elements 214.5 may be applied to the surface all the last lens element 109 in the desired configuration using a thin layer technique and/or a thick layer technique. Subsequently, they may be coated with the protective layer 214.6.
The protective layer 214.6, among others protecting the electrically conductive elements 214.5 from the aggressive immersion medium 110.1 , maybe an arbitrary protective layer. For example, the protective layer 214.6 may be a quartz (SiO) layer that has been applied via a sputter process, a CVD (chemical vapor deposition) process or the like.
The protective layer 214.6 may also comprise a polymeric material. A polyimide (Pl) material (such as the material sold by DuPont® under the name Kapton®) is particularly suitable. It will be appreciated that, for example, the protective layer 214.6 may be formed by a polyimide carrier film to which the electrically conductive elements 214.5 are applied in the desired configuration. This carrier film may then be applied to the last lens element 109 and, for example, the adhesively connected to the last lens element 109.
As may be seen from Figure 4, the protective layer 214.6 holds a plurality of further temperature sensors 214.2 connected to the control device 1 11.1. These temperature sensors 214.2 (in addition or as an alternative to the temperature sensors 1 14.2, 1 14.3) capture the temperature of the last lens element 109 at the respective location. The temperature sensors 214.2 provide corresponding first temperature data to the associated inputs 1 11.2 of the control device 1 11.1.
The functionality on the resistance heating device 214.4 is identical to the functionality of the resistance heating device 1 14.4 as it has been described above. Thus, it is here only referred to the explanations given above. In particular, the resistance heating device 214.4 again may be segmented in an arbitrarily fine manner.
Figure 5, in a schematic view corresponding to detail D of Figure 2, shows a radiation heating device 314.4 of a further embodiment of the microlithography device 101 according to the invention. The radiation heating device 314.4 may be used instead of the resistance heating device 114.4 of Figure 3. As may be seen from Figure 5 the radiation heating device 314.4 comprises a plurality of heating elements 314.5 connected to the control device 11 1.1.
The heating elements 314.5 are arranged at the immersion frame 1 10.2. The heating elements 314.5 under the control of the control device 1 11.1 emit targeted infrared radiation IR towards the last lens element 109 in order to heat the last lens element 109. The heating elements 314.5 may be formed by so-called hollow core fibres guiding the infrared radiation of a coupled infrared radiation source of the control device 11 1.1 towards the last lens element 109.
The functionality of the radiation heating device 314.4 largely corresponds to the functionality of the resistance heating device 114.4 as it has been described above. Thus, is here mainly referred to the explanations given above.
Here as well, from the actual temperature distribution TE within the last lens element 109, depending on a given setpoint temperature distribution TSE within the last lens element 109, the control device 11 1.1 establishes a third control value C for the radiation heating device 314.4. By means of this third control value C the radiation intensity of the heating elements 314.5 is adjusted. Accordingly, the heating elements 314.5 heat the last lens element 109 in such a manner that the actual temperature distribution TE approaches the setpoint temperature distribution TSE within the last lens element 109.
The radiation intensity of the heating elements 314.5 thus represents a control parameter CP in the sense of the invention since the heat transfer between the heating elements 314.5 and the last lens element 109 may be influenced by this radiation intensity. Thus, the heating elements 314.5 respectively represent an influencing device in the sense of the invention.
It will be appreciated that the radiation heating device 314.4 may allow an arbitrarily finely segmented radiation of the last lens element 109. In other words, the radiation heating device 314.4 may comprise an arbitrary number of segments selectively controllable by the control device 11 1.1. By this means it is possible to provide an arbitrary radiation intensity distribution via the radiation heating device 314.4.
The thermal attenuation control device 1 11 further comprises a first shielding in the form of a thermally insulating coating 1 15 of the last lens element 109, said coating 115 forming a thermal decoupling device in the form of a first passive thermal attenuation component of the attenuation control device 11 1.
The coating 1 15 extends over the section 109.1 of the surface of the last lens element 109 that it is located adjacent to the immersion of medium 1 10.1 and is optically unused when projecting the projection pattern onto the wafer 105. Via this thermally insulating coating 1 15 the last lens element 109 and the immersion zone 1 10 with the immersion medium 1 10.1 are section-wise thermally decoupled such that, at least external to the section 109.2 of the surface of the last lens element 109 optically used, thermal disturbances in the immersion medium 110.1 are prevented from directly propagating within the last lens element 109.
The coating 1 15 may be of any suitable material or material combination providing sufficient thermal insulation properties. In the embodiment shown in Figure 2 the coating 115 comprises a layer of an organic material, here a polyurethane (PU) resin, that has been applied to the surface section 109.1 of the last lens element 109 via a suitable technique such as, for example, a casting technique, a varnishing technique etc. After its appliance the surface of the organic layer may be treated using any known surface treatment technique in order to provide a desired surface roughness.
Part or all of the surface of the organic layer not contacting the last lens element 109 may be provided with a suitable reflective coating. This reflective coating reflects projection light scattered by the surface of the wafer 105.1 and/or the immersion medium 110.1 and/or the immersion frame 110.2 etc., thus, preventing (long-term) damage to the organic layer of the coating 1 15 that might otherwise be caused by such scattered projection light.
The shielding 115, in principle, may be designed in any suitable way to provide the thermal decoupling of the last lens element 109 from its environment, in particular the immersion medium. In particular, it may be a simple single-layer or multi-layer thermal insulation. As will be explained in further detail below, it may also be a combination of two or more layers with at least one highly thermally conductive layer and at least one thermally insulating layer. In this case, the highly thermally conductive layer may serve to transport heat towards the circumference of the last lens element (to a heat sink eventually provided at this location) and, thus, to prevent or reduce, respectively, its introduction into the last lens element.
Preferably, on its side facing away from the last lens element 109, the shielding 1 15 may have a hydrophobic surface. This hydrophobic surface may eventually be formed by a separate layer only provided for this reason. By this means, at least largely situations may be avoided wherein separate drops or droplets of the immersion medium 1 10 accumulate at the (eventually coated) surface of the last lens element 109. Such drops or droplets of immersion medium might otherwise evaporate and cause formation of a locally concentrated strong heat sink leading to a strong locally concentrated thermal disturbance in the last lens element 109.
Such drops or droplets of immersion medium 110.1 may for example form at the surface areas of the last lens element 109 that are only temporarily wetted with the immersion medium 1 10.1 (e.g. due to wafer movement induced immersion medium level alterations during operation of the microlithography device 101 ). The hydrophobic surface, in an advantageous manner, hinders formation of such drops or droplets of immersion medium 1 10.1 on the (eventually coated) surface of the last lens element 109.
Figure 6, in a schematic view corresponding to detail D of Figure 2, shows a thermal decoupling device in the form of a thermal shielding 415 of a further embodiment of the microlithography device 101 according to the invention. The shielding 415 may be used instead of the shielding 115 of Figure 2.
As may be seen from Figure 6, the shielding 415 has a multi-layer design as it has been mentioned above. The shielding 415 comprises a combination of a thermally insulating first layer 415.1 located immediately adjacent to the last lens element 109 and a highly thermally conductive second layer 415.2 located immediately adjacent to the first layer 415.1. Furthermore, a hydrophobic third layer 415.3 is applied to the outer surface of the second layer 415.2.
The thermally insulating the first layer 415.1 comprises a spacer body 415.4. The spacer body 415.4 is of sufficient rigidity to keep its shape under any normal operating conditions of the microlithography device 101. Thus, the spacer body 415.4, under normal operating conditions, provides a defined distance between the surface of the last lens element 109 and the second layer 415.2. However, it will be appreciated that, with other embodiments of the invention, separate spacer elements may be provided instead of a single spacer body.
The spacer body 415.4 is permeable to a fluid (i.e. a gas and/or a liquid). For example, an open-celled foam may be used to form the spacer body 415.4. Thus, between the surface of the last lens element 109 and the second layer 415.2, an interstice is defined forming the first layer 415.1. The interstice forming the first Iayer 415.1 is filled with a fluid (such as a gas or a liquid) of low thermal conductivity. Eventually, the interstice 415.1 may be (continuously or intermittently) rinsed with a suitably temperature adjusted fluid to guarantee the desired thermally insulating effect of the first layer 415.1.
In order to prevent ingress of immersion medium 110.1 into the interstice 415.1 a circumferential sealing element 415.5 is provided between the last lens element 109 and the second layer 415.2. The sealing element 415.5 may be a ring formed by an adhesive which, in addition, provides fixation on the second layer of 415.2 with respect to the last lens element 109.
The second layer 415.2, due to its high thermal conductivity, guarantees a good heat transfer in the radial direction R of the last lens element 109. Thus, thermal disturbances induced by the immersion medium 1 10.1 are rapidly reduced or even fully compensated by a correspondingly high heat transfer within the second layer 415.2. Consequently, such thermal disturbances, if at all, may propagate only to a reduced extent towards the last lens element 109. In other words, an efficient thermal attenuation effect is achieved. A further reduction of the propagation of such thermal disturbances is provided by the thermally insulating first layer 415.1. In other words, via the shielding 415 forming a thermal decoupling device in the sense of the invention, the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 1 10.1.
In order to achieve a rapid heat transfer within the second layer 415.2 a stabilizing device 415.6 may be provided at the outer circumference of the second layer 415.2. The stabilizing device may have a high heat capacity and, thus, a stable temperature during operation of the microlithography device 101. For example, the stabilizing device 415.6 may be formed by a circuit of a heat carrier medium.
The hydrophobic third layer 415.3, again, reduces the likelihood of the formation of local heat sinks due to the evaporation of accumulated drops or droplets of immersion medium 1 10.1 as it has been described above. The hydrophobic third layer of 415.3 may, for example, be formed by a polyimide (Pl) material as it has been mentioned above.
Figure 7, in a schematic view corresponding to detail D of Figure 2, shows a thermal shielding 515 of a further embodiment of the microlithography device 101 according to the invention. The shielding 515 may be used instead of the shielding 115 of Figure 2 or instead of the shielding 415 of Figure 6.
As may be seen from Figure 7, the shielding 515 has a multi-layer design as it has been mentioned above. The shielding 515 comprises a combination of a thermally insulating first layer 515.1 located immediately adjacent to the last lens element 109 and a second layer 515.2 located immediately adjacent to the first layer 515.1
The thermally insulating the first layer 515.1 comprises a plurality of spacer elements 515.4 evenly distributed at the circumference of the last lens element 109. The spacer elements 515.4 are of sufficient rigidity to keep their shape under any normal operating conditions of the microlithography device 101. Thus, the spacer elements 515.4, under normal operating conditions, provide a defined distance between the surface of the last lens element 109 and the second layer 515.2.
The spacer elements 515.4 define an interstice forming the first layer 515.1. The interstice forming the first layer 515.1 is filled with a fluid (such as a gas or a liquid) of low thermal conductivity. Eventually, the interstice 515.1 may be (continuously or intermittently) rinsed with a suitably temperature adjusted fluid to guarantee the desired thermally insulating effect of the first layer 515.1.
In order to prevent ingress of immersion medium 1 10.1 into the interstice 515.1 a circumferential sealing element 515.5 is provided between the last lens element 109 and the second layer 515.2. The sealing element 515.5 may be a ring formed by an adhesive which, in addition, provides fixation on the second layer of 515.2 with respect to the last lens element 109.
The second layer 515.2 again provides a good heat transfer in the radial direction R of the last lens element 109. Thus, thermal disturbances induced by the immersion medium 1 10.1 are rapidly reduced or even fully compensated by a correspondingly high heat transfer within the second layer 515.2. Consequently, such thermal disturbances, if at all, may propagate only to a reduced extent towards the last lens element 109. In other words, an efficient thermal attenuation effect is achieved. A further reduction of the propagation of such thermal disturbances is provided by the thermally insulating first layer 515.1. In other words, via the shielding 515 forming a thermal decoupling device in the sense of the invention, the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 110.1.
The rapid heat transfer within the second layer 515.2 is achieved by providing a channel system 515.7 extending in the radial direction R within the second layer 515.2. A stabilizing device in the form of a pumping and temperature adjusting device 515.6 provides a heat carrier medium circulation with a (preferably continuous) flow 515.8 of a heat carrier medium within the channel system 515.7. The heat carrier medium of the flow 515.8 is adjusted by the stabilizing device 515.6 to have a defined temperature and/or flow rate.
The flow 515.8 initially runs, in a first channel 515.9 of the second layer 515.2, in the radial direction R towards a redirecting area 515.10 at the inner circumference of the second layer 515.2. At the redirecting area 515.1 the flow 515.8 is redirected in order to flow back, within a second channel 515.1 1 of the second layer 515.2, towards the outer circumference of the second layer 515.2. Leaving the second channel 515.11 the flow 515.8 returns to the stabilizing device 515.6 where it is again adjusted in temperature and/or flow rate and re- circulated to the heat carrier medium circulation.
In the most simple case shown in Figure 7 the channel system 515.9 to 515.1 1 is formed by a thin hollow body 515.2 and a thin rib 515.12. The rib 515.12 is located within the hollow body 515.2 and extends in the radial direction R and in the circumferential direction of the last lens element 109. The rib 515.12 separates the first channel 515.9 and the second channel 515.1 1. The second channel 515.11 , via which the heat carrier medium is again transported radially outwards towards the stabilizing device 515.6, is preferably located on the side facing away from the last lens element 109 in order to achieve a rapid removal of thermal disturbances from the area of the last lens element 109. However, it will be appreciated that any other suitable configuration of such a channel system providing such a rapid removal of thermal disturbances may be used.
Again, a hydrophobic third layer may be provided at the outer surface of the second layer 515.2 in order to reduce the likelihood of the formation of local heat sinks due to the evaporation of accumulated drops or droplets of immersion medium 1 10.1 as it has been described above. As shown in Figure 7, the stabilizing device 515.6 may be connected to and controlled by the control device 1 11.1. Thus, it is possible to actively control the thermal attenuation effect on the shielding 515. As a consequence, the shielding 515 then forms an active thermal decoupling device in the sense of the invention.
Preferably, the stabilizing device 515.6 is controlled in such a manner that a given temperature distribution, preferably an even temperature, is substantially maintained (throughout the operation of the microlithography device 101 ) at the surface of the second layer 515.2 (forming a thermal shielding element in the sense of the invention) facing the last lens element 109. To this end, further temperature sensors 514.2 connected to the control device 1 11.1 may be provided at this surface. The control device 1 11.1 may then use the temperature data provided by the temperature sensors 514.2 to control the stabilizing device 515.6 in the manner described above.
Figure 8, in a schematic view corresponding to detail D of Figure 2, shows a thermal shielding 615 of a further embodiment of the microlithography device 101 according to the invention. The shielding 615 may be used instead of the shielding 115 of Figure 2, instead of the shielding 415 of Figure 6 or instead of the shielding 515 of Figure 7.
As may be seen from Figure 8, the shielding 615 is formed by a (preferably continuous) flow 615.13 of a heat carrier medium 615.14 provided within the part 110.4 of the gap between the last lens element 109 and the immersion frame 110.2 that is not filled with the immersion medium 1 10.1. The flow 615.13 is provided by a stabilizing device in the form of a pumping and temperature adjusting device 615.6 that provides the heat carrier medium with a defined temperature and flow rate.
The flow 615.13 initially runs in the radial direction R towards a contact zone 615.14. Within this contact zone 615.15 the heat carrier medium 615.14 contacts and eventually mixes with the immersion medium 110.1. In the area of the contact zone 615.5 a channel 615.16 is provided within the immersion frame 1 10.2. The channel 615.16 opens towards the contact zone 615.5. Via this channel 615.16 the heat carrier medium 615.14 and, eventually, part of the immersion medium 110.1 (eventually mixed with the heat carrier medium 615.14) are drawn off from the gap between the last lens element 109 and the immersion frame 110.2 and re-circulated back to the stabilizing device 615.6.
In the stabilizing device 615.6, if necessary, the fraction of the immersion medium 1 10.1 drawn off together with the heat carrier medium 615.14 is separated from the heat carrier medium 615.14. The stabilizing device 615.6 re-adjusts the temperature and flow rate of the heat carrier medium 615.4 and re-circulates to the heat carrier medium circulation.
The stabilizing device 615.6 also provides the immersion medium 1 10.1 to the immersion zone 1 10 at the desired flow rate. It will be appreciated that the flow rate of the immersion medium 110.1 provided to the immersion zone 1 10 and the flow rate of the heat carrier medium 615.14 provided to the part 1 10.4 of the gap between the last lens element 109 and the immersion frame 110.2 as well as the flow rate within the channel 615.16 are mutually adapted to each other in order to achieve the configuration as described above (i.e. with the immersion medium 110.1 and the heat carrier medium 615.14 contacting in the contact zone 615.15). Furthermore, these flow rates are mutually to adapted each other in order to avoid undesired pressure fluctuations within the area of the last lens element 109.
The flow 615.13 provides a good heat transport away from the last lens element 109 in the radial direction R of the last lens element 109. Thus, thermal disturbances induced by the immersion medium 1 10.1 or the immersion frame 110.2 are rapidly reduced or even fully compensated by a correspondingly high heat transport provided by the flow 615.13.
Consequently, such thermal disturbances, if at all, may propagate only to a reduced extent towards the last lens element 109. In other words, an efficient thermal attenuation effect is achieved. A further reduction of the propagation of such thermal disturbances may be provided by a thermally insulating first layer on the last lens element as it is indicated by the dashed contour 615.1 in Figure 8. In other words, via the shielding 615 forming a thermal decoupling device in the sense of the invention, the last lens element 109 is effectively thermally decoupled from its environment, in particular from the immersion medium 110.1.
As shown in Figure 8, the stabilizing device 615.6 may be connected to and controlled by the control device 1 11.1. Thus, it is possible to actively control the thermal attenuation effect on the shielding 615.
The thermal attenuation device 1 11 further comprises a ring shaped second shielding 1 16 arranged between the holder 117 of the last lens element 109 and the holder of 1 18 on the penultimate lens element 108 and forming a second passive thermal attenuation component and, thus, a thermal decoupling device in the sense of the invention.
The second shielding 116 extends from the connection area of the two holders 117 and 1 18 (to the housing of the objective 104) up to the section 109.3 on the surface of the last lens element 109 that is optically unused during projecting the projection pattern onto the wafer 105. The second shielding 116 further serves as the carrier for the Peltier elements 114.1.
The second shielding 116 as shown in Figure 8 consists of a highly thermally conductive material. In the connection area of the two holders 1 17 and 1 18 the second shielding 1 16 is connected to a temperature-stabilized intermediate element 1 19 which is, via a ring channel 1 19.1 , passed through with a heat carrier medium , e.g. water, that is held at a constant temperature via a heat carrier medium source 1 19.2.
By means of a constant temperature of the temperature-stabilized intermediate element 119 and the high thermal conductivity of the second shielding 1 16 an approximately constant temperature results on the side of the second shielding 1 16 facing towards the holder 117. Accordingly, a thermal shielding of the holder of 117 and of a part of the last lens element 109 from the rest of the objective 104 is achieved such that, here as well, an attenuation of thermal disturbances of the last lens element 109 introduced via this side is achieved.
it will be appreciated that, in principle, the second shielding 116 again may be designed in any suitable way. In particular, with the other variants of the invention, it may also be designed as a simple single-layer or multi-layer thermal insulation similar to the variants of the first shielding described above. However, it may also be a combination of two or more layers comprising at least one highly thermally conductive layer and at least one thermally insulating layer. In particular, in the embodiment shown in Figure 8, a correspondingly insulating layer may be formed on the side of the second shielding 116 facing the holder 1 17.
Figure 9 shows a block diagram of a preferred embodiment of the optical imaging method according to the invention which may be executed with the microlithography device 101.
First, in a step 120.1 execution of the method starts. In a step 120.2 the components of the microlithography device 101 are mutually positioned with respect to each other such that the configuration described above is achieved.
In a step 120.3 at least a part of the projection pattern on the mask 103.1 is projected onto the wafer 105.1 in the matter as it has been described above. In the step 120.3, in parallel to this projection, a thermal attenuation of fluctuations in the temperature distribution of the last lens element 109 induced by the environment of the last lens element, in particular by the immersion medium 1 10.1 , is provided via the thermal attenuation device 11 1 as it has been described above.
To this end, in a step 120.4, the corresponding temperatures are established via the temperature sensors 1 12.2, 1 12.3, 1 14.2, 114.3 as it has been described above. Furthermore, further parameters such as the actual supply temperature TIF of the immersion medium 110.1 , the flow rate of the immersion medium 1 10.1 and the actual light power of the illumination device 102 are established as it has been described above.
In a step 120.5 the control device 1 11 establishes the actual temperature distribution Tl within the immersion medium 110.1 in the immersion zone 1 10 as well as the actual temperature distribution TE of the last lens element 109. This is done by means of the stored temperature behavior model and using the data established in step 120.3 as it has been described above. Furthermore, the control device 1 11 establishes the control values C for the separate influencing devices (e.g. temperature adjustment device 1 12.2, supply device 1 12.1 , second supply device 1 13.2, Peltier elements 114.1 etc.).
The temperature behavior model hereby represents the relation between the captured or otherwise established temperatures as well as further parameters (e.g. flow rate of the immersion medium 1 10.1 , light power of the illumination device 102 etc) and the temperature distribution to be expected within the respective object of the temperature behavior model (i.e. the last lens element 109 and the immersion medium 1 10.1 , respectively).
The respective part of the temperature behavior model may have been established for the respective object of the temperature behavior model (i.e. the last lens element 109 or the immersion medium 1 10.1 ) in an empiric manner and/or via simulation calculations. In particular for regularly repeated situations during operation of the microlithography device 101 a sufficiently accurate estimation of the actual temperature distribution Tl within the immersion medium 1 10.1 in the immersion zone 110 as well as of the actual temperature distribution TE within the last lens element 109 May be achieved.
In a step 120.6, using the established control values C, the control parameters CP are influenced by controlling the respective influencing devices (e.g. temperature adjustment device 112.2, supply device 1 12.1 , second supply device 1 13.2, Peltier elements 114.1 etc.) via the control device 11 1.1 in the manner as it has been described above. In a step 120.7 it is checked if execution of the method is to be stopped. If this is the case, execution of the method is stopped in a step 120.8. Otherwise it is jumped back to step 120.3.
In the foregoing, the invention has been described by means of an example where a plurality of active thermal attenuation control circuits 1 12, 1 13, 114 and passive thermal attenuation components 1 15, 116 are provided in combination. However, it is to be mentioned here that, with other variants of the invention, the single active thermal attenuation control circuits and passive thermal attenuation components may each be used alone or in an arbitrary combination.
Furthermore, in the foregoing, the invention has been described by means of an example where a part of the last lens element 109 is immersed in an immersion medium 110.1 during optical imaging. However, it will be appreciated that, the invention may also be used in the context of immersion systems wherein an immersion zone at least temporarily filled with an immersion medium (in addition or as an alternative to the immersion zone between the last lens element and the wafer) is located between two optical elements of the optical element group. Such multiple immersion systems or double immersion systems are known for example from WO 2006/080212 A1 , WO 2004/019128 A2, WO 2006/051689 A1 , WO 2006/126522 A1 , WO 2006/121008 A1 and US 7,180,572 B1 , the entire disclosure of all of which is included herein by reference.
Figure 10, in a view corresponding to the view of Figure 2, schematically shows such a double immersion system which may be used in the microlithography device 101. Here, the lens element 109 is not located immediately adjacent to the wafer 105.1 but adjacent to a further optical element in the form of a lens element 709 located between the lens element 109 and the wafer 105.1. The immersion zone 1 10 is located between the lens element 109 and the lens element 709 while a further immersion zone 710 filled with a further immersion medium 710.1 is located between the further lens element 709 and the wafer 105.1.
The thermal attenuation device 1 11 is configured in a manner as it has been described above in order to provide thermal attenuation of environment induced thermal disturbances tending to cause thermal disturbances within the temperature distribution of the lens element 109. It will be appreciated that a further thermal attenuation device may be provided to provide thermal attenuation of environment induced, in particular immersion medium induced thermal disturbances tending to cause thermal disturbances within the temperature distribution of the further lens element 709. This further thermal attenuation device may be designed in a manner similar to the thermal attenuation device 1 11. Furthermore, the thermal attenuation device 1 11 may also be designed to provide such thermal attenuation for the further lens element 709.
The immersion medium 110.1 may be identical with or different from the immersion medium 610.1. Any suitable immersion medium may be used. Examples of such immersion media are heavy water or heavy oxygen water such as D2O, D2O*, H2O*, wherein O* may comprise the isotopes O16, O17 and O18. These immersion media may be mixed in an arbitrary ratio in order to achieve a desired refractive index in the respective immersion zone 1 10 and 710, respectively, and/or in order to achieve a desired relation between the refractive indices of the two immersion media and/or a desired relation between the refractive indices of the optical elements 109, 709 and one or both of the immersion media 1 10.1 , 710.1. Corresponding examples and values of refractive indices for such mixtures are given in US 2006/092533 A1 , US 2006/066926 A1 and WO 2005/106589 A1 , the entire disclosure of each of which is incorporated herein by reference.
In the foregoing, the present invention has been described by means of an example wherein the optical element group consists of refractive optical elements exclusively. However, it is to be mentioned here that the invention, in particular in the case of performing the imaging process at different wavelengths, may of course be used with optical element groups that comprise, alone or in an arbitrary combination, refractive, reflective or diffractive optical elements.
Furthermore, it is to be mentioned that, in the foregoing, the present invention has been described by means of an example in the area of microlithography. However, it will be appreciated that the present invention may also be used for any other application and imaging process, respectively.
* * * * *

Claims

1. Optical imaging device, in particular for microlithography, comprising
- a mask device for receiving a mask comprising a projection pattern,
- a projection device comprising an optical element group, - a substrate device for receiving a substrate and
- an immersion zone, wherein
- said optical element group is adapted to project a projection pattern onto said substrate,
- said optical element group comprises a plurality of optical elements with an immersion element, in particular a last optical element, at least temporarily located adjacent to said immersion zone, and
- said immersion zone, during operation, is at least temporarily filled with an immersion medium, in particular, said immersion zone, during operation, being located between a last optical element forming said immersion element and said substrate, characterized by
- a thermal attenuation device that is adapted to reduce fluctuations within the temperature distribution TE of said immersion element induced by said immersion medium, wherein - said thermal attenuation device comprises at least one thermal decoupling device providing at least partial thermal decoupling of said immersion element from at least a part of its environment.
2. Optical imaging device according to claim 1 , characterized in that
- said immersion element comprises a first area optically used and a second area optically unused during projecting said projection pattern onto said substrate and
- a first shielding is provided as a thermal decoupling device, said first shielding thermally shielding at least a part of said first section of said second area, in particular substantially the entire first section of said second area, against said immersion medium, wherein said first section is the entire section of said second area located adjacent to said immersion medium, and/or
- a second shielding is provided as a thermal decoupling device, said second shielding thermally shielding at least a part of a second section of said second area, in particular substantially the entire second section of the said second area, against an adjacent section of said projection device, wherein said second section is the entire section of said second area located adjacent to said adjacent section of said projection device.
3. Optical imaging device according to claim 1 or 2 , characterized in that
- said immersion element is held by a holding device and
- a third shielding is provided as a thermal decoupling device, said third shielding thermally shielding at least a part of said holding device, in particular substantially the entire holding device, against its environment.
4. Optical imaging device according to claim 3, characterized in that said third shielding thermally shields at least a part of an area of said holding device located adjacent to an adjacent section of said projection device, in particular the entire area of said holding device located adjacent to an adjacent section of said projection device, against said adjacent section of said projection device.
5. Optical imaging device according to any one of the preceding claims, characterized in that said thermal decoupling device
- comprises at least one passive thermally insulating device, said at least one passive thermally insulating device, in particular, comprising an organic material, and/or - comprises at least one active shielding having at least one shielding element and at least one temperature adjustment device connected to said shielding element, wherein said temperature adjustment device is arranged such that a selectable temperature distribution on at least one surface of said shielding element is substantially maintained.
6. Optical imaging device according to claim 5, characterized in that - said thermal decoupling device comprises at least one active shielding and
- said temperature adjustment device is adapted to provide a flow of a heat carrier medium in the area of said at least one shielding element.
7. Optical imaging device according to any one of the preceding claims, characterized in that said thermal decoupling device comprises at least one hydrophobic surface, in particular a hydrophobic coating, facing away from said immersion element.
8. Optical imaging device according to any one of the preceding claims, characterized in that
- a setpoint temperature distribution TSE is given for said immersion element and - said thermal attenuation device is adapted to keep a given maximum deviation
ΔTE from said setpoint temperature distribution TSE
9. Optical imaging device according to claim 8, characterized in that said maximum deviation ΔTE is less than 10 imK, preferably less than 1 imK.
10. Optical imaging device according to any one of the preceding claims, characterized in that
- said immersion element has an actual temperature distribution TE and a setpoint temperature distribution TSE is given for said immersion element and
- said thermal attenuation device comprises at least one establishing device, a control device at least temporarily connected to said establishing device and a influencing device at least temporarily connected to said control device, wherein
- said establishing device establishes at least one parameter P influencing said actual temperature distribution TE or being representative of said actual temperature distribution TE,
- said control device, as a function of said established parameter P and said setpoint temperature distribution TSE, establishing at least one control value C and
- said influencing device, as a function of said at least one established control value C, influencing a control parameter CP influencing said actual temperature distribution TE in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE is counteracted.
1 1. Optical imaging device according to claim 10, characterized in that said parameter P is at least one local temperature of said immersion medium or at least one local temperature of said immersion element.
12. Optical imaging device according to claim 1 1 , characterized in that said establishment device
- comprises at least one temperature sensor for measuring said at least one local temperature and/or
- comprises at least one estimation device for estimating said at least one local temperature.
13. Optical imaging device according to any one of claims 10 to 12, characterized in that said control parameter CP
- is a temperature of said immersion medium or
- is a flow rate of said immersion medium or - is a temperature of a gas atmosphere contacting said immersion medium or
- is a humidity of a gas atmosphere contacting said immersion medium or
- is a flow rate of a gas atmosphere contacting said immersion medium or
- is a temperature of at least one temperature adjustment element being in operative connection with said immersion element.
14. Optical imaging device according to any one of claims 10 to 13, characterized in that said control device is adapted to use a temperature behavior model of said immersion element and/or of said immersion medium within said immersion zone for establishing said control value C.
15. Optical imaging device according claim 14, characterized in that - said control device comprises a memory storing model data representing said temperature behavior model or parameters for calculating model data representing said temperature behavior model and
- said control device uses said model data for establishing said control value C.
16. Optical imaging device according to any one of claims 10 to 15, characterized in that said thermal attenuation device comprises, as said influencing device, at least one first temperature adjustment device for adjusting the temperature of said immersion medium supplied to said immersion zone.
17. Optical imaging device according to claim 16, characterized in that
- said control device establishes said control value C for said first temperature adjustment device as a function of an alteration ΔTIE of said temperature distribution Tl to be expected within said immersion medium in such a manner that said first temperature adjustment device adjusts said temperature of said immersion medium supplied to said immersion zone to a supply temperature TIF, wherein
- said supply temperature TIF is selected such that, due to said alteration ΔTIE of said temperature distribution Tl to be expected within said immersion medium, a given temperature distribution TSI is to be expected within said immersion medium.
18. Optical imaging device according to claim 16 or 17, characterized in that said first temperature adjustment device is arranged in the area of an inlet of said immersion medium to said immersion zone.
19. Optical imaging device according to any one of claims 10 to 18, characterized in that - said thermal attenuation device comprises, as said influencing device, an adjustment device for influencing the evaporation induced cooling of said immersion medium in a contact area with an adjacent gas atmosphere, wherein
- said adjustment device adjusts at least one state parameter of said gas atmosphere contacting said immersion medium and - said at least one state parameter is a temperature TA of said gas atmosphere, a humidity HA of said gas atmosphere or a flow rate VA of said gas atmosphere.
20. Optical imaging device according to claim 19, characterized in that said control device establishes said control value C for said adjustment device as a function of the state of said immersion medium in said contact area in such a manner that a given evaporation induced cooling, in particular substantially no evaporation induced cooling, of said immersion medium is to be expected in said contact area.
21. Optical imaging device according to claim 19 or 20, characterized in that said contact area substantially extends over the entire free surface of said immersion medium.
22. Optical imaging device according to any one of claims 6 to 21 , characterized in that said thermal attenuation device comprises, as said influencing device, at least one second temperature adjustment device being in operative connection with said immersion element for adjusting the temperature of said immersion element.
23. Optical imaging device according to claim 22, characterized in that said control device establishes said control value C for said second temperature adjustment device as a function of a temperature distribution Tl within said immersion medium in said immersion zone established by said establishing device in such a manner that said second temperature adjustment device adjusts the temperature of said immersion element in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE that is due to said established temperature distribution Tl within said immersion medium is counteracted.
24. Optical imaging device according to claim 22 or 23, characterized in that said second temperature adjustment device is arranged in the area of the circumference of said immersion element.
25. Optical imaging device according to any one of claims 22 to 24, characterized in that said second temperature adjustment device - comprises at least one Peltier-Element and/or
- comprises at least one resistance heating device arranged at said immersion element, wherein said resistance heating device, in particular, is embedded within said immersion element or is covered with a protection layer against said immersion medium, and/or
- comprises at least one radiation heating device for providing heating radiation, in particular infrared radiation, to said immersion element.
26. Optical imaging device according to any one of claims 6 to 25, characterized in that said setpoint temperature distribution TSE is selected in such a manner that - at least one imaging error of said immersion element is reduced, in particular minimized, and/or
- at least one imaging error of said optical element group is reduced, in particular minimized.
27. Optical imaging device according to any one of the preceding claims, characterized in that said immersion element is made of a material having a refractive index larger than the refractive index of quartz glass and/or having a refractive index showing a higher temperature sensitivity than the refractive index of quartz glass.
28. Optical imaging device according to any one of the preceding claims, characterized in that said immersion element is made of a spinel or a LuAG.
29. Optical imaging device according to any one of the preceding claims, characterized in that said immersion element is a last optical element of said optical element group at least temporarily located adjacent to said substrate during operation.
30. Optical imaging device according to any one of the preceding claims, characterized in that the numerical aperture is at least 1.3, in particular at least 1.4.
31. Optical imaging method, in particular for microlithography, wherein
- a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, wherein - an immersion element, in particular a last optical element, of said optical element group is at least partially immersed, in the area of an immersion zone, into an immersion medium, said immersion medium in particular being located adjacent to said substrate, characterized in that - a reduction of fluctuations within the temperature distribution TE of said immersion element induced by said immersion medium is provided via a thermal attenuation device, wherein
- via said thermal attenuation device there is provided an at least partial thermal decoupling of said immersion element from at least a part of its environment.
32. Optical imaging method according to claim 31 , characterized in that
- said immersion element comprises a first area optically used and a second area optically unused during projecting said projection pattern onto said substrate and
- at least a part of said first section of said second area, in particular substantially the entire first section of said second area, is shielded against said immersion medium, wherein said first section is the entire section of said second area located adjacent to said immersion medium, and/or
- at least a part of a second section of said second area, in particular substantially the entire second section of the said second area, is shielded against an adjacent section of said projection device, wherein said second section is the entire section of said second area located adjacent to said adjacent section of said projection device.
33. Optical imaging method according to claim 31 or 32, characterized in that - said immersion element is held by a holding device and
- at least a part of said holding device, in particular substantially the entire holding device, is shielded against its environment.
34. Optical imaging method according to claim 33, characterized in that at least a part of an area of said holding device located adjacent to an adjacent section of said projection device, in particular the entire area of said holding device located adjacent to an adjacent section of said projection device, is shielded against said adjacent section of said projection device.
35. Optical imaging method according to any one of claims 31 to 34, characterized in that said thermal decoupling - is provided via at least one passive thermally insulating device, said at least one passive thermally insulating device, in particular, comprising an organic material, and/or
- is provided via at least one active shielding having at least one shielding element and at least one temperature adjustment device connected to said shielding element, wherein said temperature adjustment device is arranged such that a selectable temperature distribution on at least one surface of said shielding element is substantially maintained.
36. Optical imaging method according to claim 35, characterized in that
- said thermal decoupling is provided via at least one active shielding, wherein - said temperature adjustment device provides a flow of a heat carrier medium in the area of said at least one shielding element.
37. Optical imaging method according to any one of claims 31 to 36, characterized in that
- a setpoint temperature distribution TSE is given for said immersion element and
- via said thermal attenuation device a given maximum deviation ΔTE from said setpoint temperature distribution TSE is kept.
38. Optical imaging method according to claim 37, characterized in that said maximum deviation ΔTE is less than 10 imK, preferably less than 1 imK.
39. Optical imaging method according to any one of claims 31 to 38, characterized in that
- said last immersion element has an actual temperature distribution TE and a setpoint temperature distribution TSE is given for said immersion element and
- via said thermal attenuation device
- at least one parameter P influencing said actual temperature distribution TE or being representative of said actual temperature distribution TE is established,
- as a function of said established parameter P and said setpoint temperature distribution TSE, at least one control value C is established and
- as a function of said at least one established control value C, a control parameter CP influencing said actual temperature distribution TE is influenced in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE is counteracted.
40. Optical imaging method according to claim 39, characterized in that said parameter P is at least one local temperature of said immersion medium or at least one local temperature of said immersion element.
41. Optical imaging method according to claim 40, characterized in that
- said at least one local temperature is measured and/or
- said at least one local temperature is estimated.
42. Optical imaging method according to any one of claims 39 to 41 , characterized in that said control parameter CP
- is a temperature of said immersion medium or
- is a flow rate of said immersion medium or
- is a temperature of a gas atmosphere contacting said immersion medium or - is a humidity of a gas atmosphere contacting said immersion medium or
- is a flow rate of a gas atmosphere contacting said immersion medium or
- is a temperature of at least one temperature adjustment element being in operative connection with said immersion element.
43. Optical imaging method according to any one of claims 39 to 42, characterized in that a temperature behavior model of said immersion element and/or of said immersion medium within said immersion zone is used for establishing said control value C.
44. Optical imaging method according claim 43, characterized in that
- model data are used for establishing said control value C, wherein
- said model data represent said temperature behavior model or parameters for calculating said temperature behavior model
45. Optical imaging method according to any one of claims 39 to 44, characterized in that the temperature of said immersion medium supplied to said immersion zone is adjusted.
46. Optical imaging method according to claim 45, characterized in that - said control value C is established as a function of an alteration ΔTIE of said temperature distribution Tl to be expected within said immersion medium in such a manner that said temperature of said immersion medium supplied to said immersion zone is adjusted to a supply temperature TIF, wherein
- said supply temperature TIF is selected such that, due to said alteration ΔTIE of said temperature distribution Tl to be expected within said immersion medium, a given temperature distribution TSI is to be expected within said immersion medium.
47. Optical imaging method according to claim 45 or 46, characterized in that said temperature of said immersion medium is adjusted in the area of an inlet of said immersion medium to said immersion zone.
48. Optical imaging method according to any one of claims 39 to 47, characterized in that
- said thermal attenuation device influences the evaporation induced cooling of said immersion medium in a contact area with an adjacent gas atmosphere, wherein
- at least one state parameter of said gas atmosphere contacting said immersion medium is adjusted and - said at least one state parameter is a temperature TA of said gas atmosphere, a humidity HA of said gas atmosphere or a flow rate VA of said gas atmosphere.
49. Optical imaging method according to claim 48, characterized in that said control value C is established as a function of the state of said immersion medium in said contact area in such a manner that a given evaporation induced cooling, in particular substantially no evaporation induced cooling, of said immersion medium is to be expected in said contact area.
50. Optical imaging method according to claim 48 or 49, characterized in that said contact area substantially extends over the entire free surface of said immersion medium.
51. Optical imaging method according to any one of claims 39 to 50, characterized in that, via said thermal attenuation device, the temperature of said immersion element is directly adjusted.
52. Optical imaging method according to claim 51 , characterized in that said control value C is established as a function of a temperature distribution Tl within said immersion medium in said immersion zone in such a manner that the temperature of said immersion element is adjusted in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE that is due to said established temperature distribution Tl within said immersion medium is counteracted.
53. Optical imaging method according to claim 51 or 52, characterized in that the temperature of said immersion element is adjusted in the area of its circumference.
54. Optical imaging method according to any one of claims 51 to 54 , characterized in that the temperature of said immersion element - is adjusted via at least one Peltier-Element and/or
- is adjusted via least one resistance heating device arranged at said immersion element, wherein said resistance heating device, in particular, is embedded within said immersion element or is covered with a protection layer against said immersion medium, and/or
- is adjusted via at least one radiation heating device for providing heating radiation, in particular infrared radiation, to said immersion element.
55. Optical imaging method according to any one of claims 39 to 54, characterized in that said setpoint temperature distribution TSE is selected in such a manner that at least one imaging error of said immersion element is reduced, in particular minimized.
56. Optical imaging method according to any one of claims 39 to 55, characterized in that said setpoint temperature distribution TSE is selected in such a manner that at least one imaging error of said optical element group is reduced, in particular minimized.
57. Optical imaging method according to any one of claims 31 to 56, characterized in that said immersion element is made of a material having a refractive index larger than the refractive index of quartz glass.
58. Optical imaging method according to any one of claims 31 to 57, characterized in that said immersion element is made of a material having a refractive index showing a higher temperature sensitivity than the refractive index of quartz glass.
59. Optical imaging method according to any one preceding claims 31 to 58, characterized in that said immersion element is made of a spinel or a LuAG.
60. Optical imaging method according to any one of claims 31 to 59, characterized in that the numerical aperture is at least 1.3, in particular at least 1.4.
61. Optical imaging device, in particular for microlithography, comprising
- a mask device for receiving a mask comprising a projection pattern, - a projection device comprising an optical element group and
- a substrate device for receiving a substrate, wherein
- said optical element group is adapted to project a projection pattern onto said substrate,
- said optical element group comprises a plurality of optical elements with at least one thermally controlled optical element characterized in that
- a thermal attenuation device is associated to said thermally controlled optical element, said thermal attenuation device being adapted to reduce fluctuations within the temperature distribution TE of said thermally controlled optical element, - said thermal attenuation device uses a temperature behavior model of said thermally controlled optical element to reduce said fluctuations within the temperature of said thermally controlled optical element.
62. Optical imaging device according to claim 61 , characterized in that
- said thermal attenuation device comprises a memory storing model data representing said temperature behavior model or parameters for calculating model data representing said temperature behavior model and
- said thermal attenuation device uses said model data to reduce said fluctuations within the temperature of said thermally controlled optical element.
63. Optical imaging device according to claim 61 or 62, characterized in that
- a setpoint temperature distribution TSE is given for said thermally controlled optical element and
- said thermal attenuation device is adapted to keep a given maximum deviation ΔTE from said setpoint temperature distribution TSE.
64. Optical imaging device according to claim 63, characterized in that said maximum deviation ΔTE is less than 10 mK, preferably less than 1 mK.
65. Optical imaging device according to any one of claims 61 to 64, characterized in that
- said thermally controlled optical element has an actual temperature distribution TE and a setpoint temperature distribution TSE is given for said thermally controlled optical element and
- said thermal attenuation device comprises at least one establishing device, a control device at least temporarily connected to said establishing device and an influencing device at least temporarily connected to said control device, wherein - said establishing device establishes at least one parameter P influencing said actual temperature distribution TE or being representative of said actual temperature distribution TE,
- said control device, as a function of said established parameter P and said setpoint temperature distribution TSE, establishing at least one control value C and - said influencing device, as a function of said at least one established control value
C, influencing a control parameter CP influencing said actual temperature distribution TE in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE is counteracted.
66. Optical imaging device according to claim 65, characterized in that said parameter P is at least one local temperature of a contact medium located adjacent to said thermally controlled optical element or at least one local temperature of said thermally controlled optical element.
67. Optical imaging device according to claim 66, characterized in that said establishment device - comprises at least one temperature sensor for measuring said at least one local temperature and/or
- comprises at least one estimation device for estimating said at least one local temperature.
68. Optical imaging device according to any one of claims 65 to 67, characterized in that said control parameter CP
- is a temperature of a contact medium located adjacent to said thermally controlled optical element or - is a flow rate of a contact medium located adjacent to said thermally controlled optical element or
- is a temperature of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or
- is a humidity of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or
- is a flow rate of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or
- is a temperature of at least one temperature adjustment element being in operative connection with said thermally controlled optical element.
69. Optical imaging device according to any one of claims 65 to 68, characterized in that a contact zone is provided, said contact zone being located adjacent to said thermally controlled optical element and being at least temporarily supplied with a contact medium.
70. Optical imaging device according to claim 69, characterized in that - that said thermally controlled optical element is a last optical element at least temporarily located adjacent to said substrate during operation,
- said contact zone is an immersion zone located between sad last optical element and said substrate and at least temporarily being filled with a immersion medium as said contact medium
71. Optical imaging device according to claim 69 or 70, characterized in that said thermal attenuation device comprises, as said influencing device, at least one first temperature adjustment device for adjusting the temperature of said contact medium supplied to said contact zone.
72. Optical imaging device according to claim 71 , characterized in that
- said control device establishes said control value C for said first temperature adjustment device as a function of an alteration ΔTIE of said temperature distribution Tl to be expected within said contact medium in such a manner that said first temperature adjustment device adjusts said temperature of said contact medium supplied to said contact zone to a supply temperature TIF, wherein
- said supply temperature TIF is selected such that, due to said alteration ΔTIE of said temperature distribution Tl to be expected within said contact medium, a given temperature distribution TSI is to be expected within said contact medium.
73. Optical imaging device according to claim 71 for 72, characterized in that said first temperature adjustment device is arranged in the area of an inlet of said contact medium to said contact zone.
74. Optical imaging device according to any one of claims 69 to 73, characterized in that
- said thermal attenuation device comprises, as said influencing device, an adjustment device for influencing the evaporation induced cooling of said contact medium in a contact area with an adjacent gas atmosphere, wherein
- said adjustment device adjusts at least one state parameter of said gas atmosphere contacting said contact medium and
- said at least one state parameter is a temperature TA of said gas atmosphere, a humidity HA of said gas atmosphere or a flow rate VA of said gas atmosphere.
75. Optical imaging device according to claim 74, characterized in that said control device establishes said control value C for said adjustment device as a function of the state of said contact medium in said contact area in such a manner that a given evaporation induced cooling, in particular substantially no evaporation induced cooling, of said contact medium is to be expected in said contact area.
76. Optical imaging device according to claim 74 or 75, characterized in that said contact area substantially extends over the entire free surface of said immersion medium.
77. Optical imaging device according to any one of claims 65 to 76, characterized in that said thermal attenuation device comprises, as said influencing device, at least one second temperature adjustment device being in operative connection with said thermally controlled optical element for adjusting the temperature of said thermally controlled optical element.
78. Optical imaging device according to claim 77, characterized in that
- a contact zone is located adjacent to said thermally controlled optical element, said contact zone at least temporarily being filled with a contact medium, and
- said control device establishes said control value C for said second temperature adjustment device as a function of a temperature distribution Tl within said contact medium in said contact zone established by said establishing device in such a manner that said second temperature adjustment device adjusts the temperature of said thermally controlled optical element in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE that is due to said established temperature distribution Tl within said contact medium is counteracted.
79. Optical imaging device according to claim 77 or 78, characterized in that said second temperature adjustment device is arranged in the area of the circumference of said thermally controlled optical element.
80. Optical imaging device according to any one of claims 77 to 79, characterized in that said second temperature adjustment device
- comprises at least one Peltier-Element and/or
- comprises at least one resistance heating device arranged at said thermally controlled optical element, wherein said resistance heating device, in particular, is embedded within said thermally controlled optical element or is covered with a protection layer against said contact medium, and/or - comprises at least one radiation heating device for providing heating radiation, in particular infrared radiation, to said thermally controlled optical element.
81. Optical imaging device according to any one of claims 65 to 80, characterized in that setpoint temperature distribution TSE is selected in such a manner that - at least one imaging error of said thermally controlled optical element is reduced, in particular minimized, and/or
- at least one imaging error of said optical element group is reduced, in particular minimized.
82. Optical imaging device according to any one of claims 61 to 81 , characterized in that said thermal attenuation device comprises at least one thermal decoupling device providing at least partial thermal decoupling of said thermally controlled optical element from at least a part of its environment.
83. Optical imaging device according to claim 82, characterized in that - a contact zone is located adjacent to said thermally controlled optical element, said contact zone at least temporarily being filled with a contact medium, and
- said thermally controlled optical element comprises a first area optically used and a second area optically unused during projecting said projection pattern onto said substrate and - a first shielding is provided as a thermal decoupling device, said first shielding thermally shielding at least a part of said first section of said second area, in particular substantially the entire first section of said second area, against said contact medium, wherein said first section is the entire section of said second area located adjacent to said contact medium, and/or
- a second shielding is provided as a thermal decoupling device, said second shielding thermally shielding at least a part of a second section of said second area, in particular substantially the entire second section of the said second area, against an adjacent section of said projection device, wherein said second section is the entire section of said second area located adjacent to said adjacent section of said projection device.
84. Optical imaging device according to claim 82 or 83, characterized in that
- said thermally controlled optical element is held by a holding device and
- a third shielding is provided as a thermal decoupling device, said third shielding thermally shielding at least a part of said holding device, in particular substantially the entire holding device, against its environment.
85. Optical imaging device according to claim 84, characterized in that said third shielding thermally shields at least a part of an area of said holding device located adjacent to an adjacent section of said projection device, in particular the entire area of said holding device located adjacent to an adjacent section of said projection device, against said adjacent section of said projection device.
86. Optical imaging device according to any one of claims 83 to 85, characterized in that said thermal decoupling device
- comprises at least one passive thermally insulating device, said at least one passive thermally insulating device, in particular, comprising an organic material, and/or
- comprises at least one active shielding having at least one shielding element and at least one temperature adjustment device connected to said shielding element, wherein said temperature adjustment device is arranged such that a selectable temperature distribution on at least one surface of said shielding element is substantially maintained.
87. Optical imaging device according to claim 86, characterized in that
- said thermal decoupling device comprises at least one active shielding and
- said temperature adjustment device is adapted to provide a flow of a heat carrier medium in the area of said at least one shielding element.
88. Optical imaging device according to any one of claims 61 to 87, characterized in that said thermally controlled optical element is made of a material having a refractive index larger than the refractive index of quartz glass and/or having a refractive index showing a higher temperature sensitivity than the refractive index of quartz glass.
89. Optical imaging device according to any one of claims 61 to 88, characterized in that said thermally controlled optical element is made of a spinel or a LuAG.
90. Optical imaging device according to any one of claims 61 to 89, characterized in that said immersion element is a last optical element of said optical element group at least temporarily located adjacent to said substrate during operation.
91. Optical imaging device according to any one of claims 61 to 90, characterized in that the numerical aperture is at least 1.3, in particular at least 1.4.
92. Optical imaging method, in particular for microlithography, wherein
- a projection pattern is projected onto a substrate by means of the optical elements of an optical element group, wherein
- sad optical elements comprise a thermally controlled optical element, characterized in that
- fluctuations within the temperature distribution TE of said thermally controlled optical element are reduced by a thermal attenuation device, wherein - a temperature behavior model of said thermally controlled optical element is used to reduce said fluctuations within the temperature of said thermally controlled optical element.
93. Optical imaging method according to claim 92, characterized in that
- model data are used to reduce said fluctuations within the temperature of said thermally controlled optical element, wherein
- said model data represent said temperature behavior model or parameters for calculating said temperature behavior model.
94. Optical imaging method according to claim 92 or 93, characterized in that
- a setpoint temperature distribution TSE is given for said thermally controlled optical element and,
- via said thermal attenuation device, a given maximum deviation ΔTE from said setpoint temperature distribution TSE is kept.
95. Optical imaging method according to claim 94, characterized in that said maximum deviation ΔTE is less than 10 mK, preferably less than 1 mK.
96. Optical imaging device according to any one of claims 92 to 95, characterized in that
- said thermally controlled optical element has an actual temperature distribution TE and a setpoint temperature distribution TSE is given for said thermally controlled optical element and,
- via said thermal attenuation device,
- at least one parameter P influencing said actual temperature distribution TE or being representative of said actual temperature distribution TE is established, - as a function of said established parameter P and said setpoint temperature distribution TSE, at least one control value C is established and
- as a function of said at least one established control value C, a control parameter CP influencing said actual temperature distribution TE is influenced in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE is counteracted.
97. Optical imaging method according to claim 96, characterized in that said parameter P is at least one local temperature of a contact medium located adjacent to said thermally controlled optical element or at least one local temperature of said thermally controlled optical element.
98. Optical imaging method according to claim 97, characterized in that
- said at least one local temperature is measured and/or
- said at least one local temperature is estimated .
99. Optical imaging method according to any one of claims 96 to 98, characterized in that said control parameter CP
- is a temperature of a contact medium located adjacent to said thermally controlled optical element or
- is a flow rate of a contact medium located adjacent to said thermally controlled optical element or - is a temperature of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or
- is a humidity of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or - is a flow rate of a gas atmosphere contacting a contact medium located adjacent to said thermally controlled optical element or
- is a temperature of at least one temperature adjustment element being in operative connection with said thermally controlled optical element.
100. Optical imaging method according to any one of claims 96 to 99, characterized in that a contact zone is provided, said contact zone being located adjacent to said thermally controlled optical element and being at least temporarily supplied with a contact medium.
101. Optical imaging method according to claim 100, characterized in that
- that said thermally controlled optical element is a last optical element at least temporarily located adjacent to said substrate during operation,
- said contact zone is an immersion zone located between sad last optical element and said substrate and at least temporarily being filled with a immersion medium as said contact medium
102. Optical imaging method according to claim 100 or 101 , characterized in that, via said thermal attenuation device, the temperature of said contact medium supplied to said contact zone is adjusted.
103. Optical imaging method according to claim 102, characterized in that
- said control value C for said first temperature adjustment device is established as a function of an alteration ΔTIE of said temperature distribution Tl to be expected within said contact medium in such a manner that said temperature of said contact medium supplied to said contact zone is adjusted to a supply temperature TIF, wherein
- said supply temperature TIF is selected such that, due to said alteration ΔTIE of said temperature distribution Tl to be expected within said contact medium, a given temperature distribution TSI is to be expected within said contact medium.
104. Optical imaging method according to claim 102 or 103, characterized in that the temperature of said contact medium is adjusted in the area of an inlet of said contact medium to said contact zone.
105. Optical imaging method according to any one of claims 100 to 104, characterized in that
- said thermal attenuation device influences the evaporation induced cooling of said contact medium in a contact area with an adjacent gas atmosphere, wherein
- at least one state parameter of said gas atmosphere contacting said contact medium is adjusted and - said at least one state parameter is a temperature TA of said gas atmosphere, a humidity HA of said gas atmosphere or a flow rate VA of said gas atmosphere.
106. Optical imaging method according to claim 105, characterized in that said control value C is established as a function of the state of said contact medium in said contact area in such a manner that a given evaporation induced cooling, in particular substantially no evaporation induced cooling, of said contact medium is to be expected in said contact area.
107. Optical imaging method according to claim 105 or 106, characterized in that said contact area substantially extends over the entire free surface of said contact medium.
108. Optical imaging method according to any one of claims 96 to 107, characterized in that, via said thermal attenuation device, the temperature of said thermally controlled optical element is directly adjusted.
109. Optical imaging method according to claim 108, characterized in that
- a contact zone is located adjacent to said thermally controlled optical element, said contact zone at least temporarily being filled with a contact medium, and
- said control value C is established as a function of a temperature distribution Tl within said contact medium in said contact zone in such a manner that the temperature of said thermally controlled optical element is adjusted in such a manner that a deviation of said actual temperature distribution TE from said setpoint temperature distribution TSE that is due to said established temperature distribution Tl within said contact medium is counteracted.
1 10. Optical imaging method according to claim 108 or 109, characterized in that the temperature of said thermally controlled optical element is adjusted in the area of its circumference.
1 11. Optical imaging method according to any one of claims 108 to 1 10, characterized in that that the temperature of said thermally controlled optical element
- is adjusted via at least one Peltier-Element and/or - is adjusted via least one resistance heating device arranged at said thermally controlled optical element, wherein said resistance heating device, in particular, is embedded within said thermally controlled optical element or is covered with a protection layer against said immersion medium, and/or - is adjusted via at least one radiation heating device for providing heating radiation, in particular infrared radiation, to said thermally controlled optical element.
1 12. Optical imaging method according to any one of claims 106 to 1 11 , characterized in that said setpoint temperature distribution TSE is selected in such a manner that at least one imaging error of said thermally controlled optical element is reduced, in particular minimized.
1 13. Optical imaging method according to any one of claims 106 to 1 12, characterized in that said setpoint temperature distribution TSE is selected in such a manner that at least one imaging error of said optical element group is reduced, in particular minimized.
1 14. Optical imaging method according to any one of claims 91 to 113, characterized in that said thermally controlled optical element is decoupled from at least a part of its environment by said thermal attenuation device.
15. Optical imaging method according to claim 114, characterized in that
- a contact zone is located adjacent to said thermally controlled optical element, said contact zone at least temporarily being filled with a contact medium, and
- said thermally controlled optical element comprises a first area optically used and a second area optically unused during projecting said projection pattern onto said substrate and
- at least a part of said first section of said second area, in particular substantially the entire first section of said second area, is shielded against said contact medium, wherein said first section is the entire section of said second area located adjacent to said contact medium, and/or
- at least a part of a second section of said second area, in particular substantially the entire second section of the said second area, is shielded against an adjacent section of said projection device, wherein said second section is the entire section of said second area located adjacent to said adjacent section of said projection device.
16. Optical imaging method according to claim 114 or 1 15, characterized in that
- said thermally controlled optical element is held by a holding device and
- at least a part of said holding device, in particular substantially the entire holding device, is shielded against its environment.
17. Optical imaging method according to claim 116, characterized in that at least a part of an area of said holding device located adjacent to an adjacent section of said projection device, in particular the entire area of said holding device located adjacent to an adjacent section of said projection device, is shielded against said adjacent section of said projection device.
18. Optical imaging method according to any one of claims 1 15 to 1 17, characterized in that said thermal decoupling
- it is provided by at least one passive thermally insulating device, said at least one passive thermally insulating device, in particular, comprising an organic material, and/or - this provided by at least one active shielding having at least one shielding element and at least one temperature adjustment device connected to said shielding element, wherein said temperature adjustment device is arranged such that a selectable temperature distribution on at least one surface of said shielding element is substantially maintained.
1 19. Optical imaging method according to any one of claims 92 to 1 18, characterized in that said thermally controlled optical element is made of a material having a refractive index larger than the refractive index of quartz glass.
120. Optical imaging method according to any one of claims 92 to 119, characterized in that said thermally controlled optical element is made of a material having a refractive index showing a higher temperature sensitivity than the refractive index of quartz glass.
121. Optical imaging method according to any one of claims 92 to 120, characterized in that said thermally controlled optical element is made of a spinel or a LuAG.
122. Optical imaging method according to any one of claims 92 to 121 , characterized in that the numerical aperture is at least 1.3, in particular at least 1.4.
123. Optical imaging device, in particular for microlithography, comprising
- a mask device for receiving a mask comprising a projection pattern,
- a projection device comprising an optical element group, - a substrate device for receiving a substrate and
- an immersion zone, wherein
- said optical element group is adapted to project a projection pattern onto said substrate,
- said optical element group comprises a plurality of optical elements with a last optical element at least temporarily located adjacent to the substrate during operation, and
- said immersion zone, during operation, is located between the last optical element and the substrate and at least temporarily filled with a immersion medium, characterized by a thermal attenuation device that is adapted to reduce fluctuations within the temperature distribution TE of said last optical element induced by said immersion medium.
*****
PCT/EP2007/054503 2006-05-09 2007-05-09 Optical imaging device with thermal attenuation WO2007128835A1 (en)

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EP07728955.1A EP2016465B1 (en) 2006-05-09 2007-05-09 Optical imaging device with thermal attenuation
CN200780023553.7A CN101479665B (en) 2006-05-09 2007-05-09 Optical imaging device with thermal attenuation
KR1020087029857A KR101411764B1 (en) 2006-05-09 2007-05-09 Optical imaging device with thermal attenuation
US12/267,074 US8363206B2 (en) 2006-05-09 2008-11-07 Optical imaging device with thermal attenuation
US13/712,576 US8902401B2 (en) 2006-05-09 2012-12-12 Optical imaging device with thermal attenuation
US14/531,109 US9810996B2 (en) 2006-05-09 2014-11-03 Optical imaging device with thermal attenuation
US15/800,606 US20180181007A1 (en) 2006-05-09 2017-11-01 Optical imaging device with thermal attenuation

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