WO2007106444A3 - Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors - Google Patents

Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors Download PDF

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Publication number
WO2007106444A3
WO2007106444A3 PCT/US2007/006233 US2007006233W WO2007106444A3 WO 2007106444 A3 WO2007106444 A3 WO 2007106444A3 US 2007006233 W US2007006233 W US 2007006233W WO 2007106444 A3 WO2007106444 A3 WO 2007106444A3
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WO
WIPO (PCT)
Prior art keywords
group
quantum confined
electrically pumped
transition metal
metal doped
Prior art date
Application number
PCT/US2007/006233
Other languages
French (fr)
Other versions
WO2007106444A2 (en
Inventor
Sergey Mirov
Vladimir Fedorov
Dmitri Martyshkin
Original Assignee
Univ Alabama Res Found
Sergey Mirov
Vladimir Fedorov
Dmitri Martyshkin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Alabama Res Found, Sergey Mirov, Vladimir Fedorov, Dmitri Martyshkin filed Critical Univ Alabama Res Found
Priority to AU2007225183A priority Critical patent/AU2007225183B2/en
Priority to EP07752900.6A priority patent/EP2052445A4/en
Priority to JP2009500415A priority patent/JP5758575B2/en
Priority to US12/282,874 priority patent/US8284805B2/en
Priority to NZ571290A priority patent/NZ571290A/en
Priority to CA2645416A priority patent/CA2645416C/en
Publication of WO2007106444A2 publication Critical patent/WO2007106444A2/en
Publication of WO2007106444A3 publication Critical patent/WO2007106444A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1628—Solid materials characterised by a semiconducting matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3018—AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
PCT/US2007/006233 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors WO2007106444A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AU2007225183A AU2007225183B2 (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
EP07752900.6A EP2052445A4 (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
JP2009500415A JP5758575B2 (en) 2006-03-13 2007-03-12 Electrically pumped (pumped) widely tunable mid-infrared laser based on quantum confined transition metal doped semiconductor
US12/282,874 US8284805B2 (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
NZ571290A NZ571290A (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors
CA2645416A CA2645416C (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78196406P 2006-03-13 2006-03-13
US60/781,964 2006-03-13

Publications (2)

Publication Number Publication Date
WO2007106444A2 WO2007106444A2 (en) 2007-09-20
WO2007106444A3 true WO2007106444A3 (en) 2008-12-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/006233 WO2007106444A2 (en) 2006-03-13 2007-03-12 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors

Country Status (7)

Country Link
US (1) US8284805B2 (en)
EP (1) EP2052445A4 (en)
JP (2) JP5758575B2 (en)
AU (1) AU2007225183B2 (en)
CA (1) CA2645416C (en)
NZ (3) NZ571290A (en)
WO (1) WO2007106444A2 (en)

Families Citing this family (13)

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US8114693B1 (en) * 2007-09-18 2012-02-14 Partial Assignment University of Central Florida Method of fabricating solid state gas dissociating device by laser doping
CN203595658U (en) 2010-10-14 2014-05-14 诺瓦威夫科技公司 Optical chamber module component
US9651488B2 (en) 2010-10-14 2017-05-16 Thermo Fisher Scientific (Bremen) Gmbh High-accuracy mid-IR laser-based gas sensor
US20120213513A1 (en) * 2011-02-18 2012-08-23 Bae Systems Information And Electronic Systems Integration, Inc. Direct generation semiconductor IRCM laser system
US9551079B2 (en) 2013-09-13 2017-01-24 Purdue Research Foundation Systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions
WO2015047788A1 (en) * 2013-09-30 2015-04-02 Ipg Photonics Corporation Ultra-short pulse mid-ir mode-locked laser
US10218146B2 (en) * 2013-10-25 2019-02-26 Atla Lasers As Laser crystal
US9042419B1 (en) * 2014-01-14 2015-05-26 King Abdulaziz City for Science and Technology (KACST) Laser converter for emitting a green laser
EP4343989A2 (en) * 2015-10-06 2024-03-27 IPG Photonics Corporation Single pass laser amplifier with pulsed pumping
CN106010535A (en) * 2016-05-19 2016-10-12 天津大学 Preparing method for Gd-Zn-Cu-In-S@ZnS core-shell quantum dot with adjustable emission wavelength
US11851368B2 (en) 2018-09-07 2023-12-26 University Of Central Florida Research Foundation Optical nanocomposites for laser applications
US11056856B2 (en) 2019-02-13 2021-07-06 International Business Machines Corporation Plasmonic laser
WO2023140339A1 (en) * 2022-01-21 2023-07-27 国立研究開発法人理化学研究所 Spectroscopic system and spectroscopic method

Citations (3)

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US6710366B1 (en) * 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6984369B1 (en) * 1999-10-28 2006-01-10 The Regents Of The University Of California Process for making surfactant capped metal oxide nanocrystals, and products produced by the process
US7267875B2 (en) * 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

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JPH02157197A (en) * 1988-12-09 1990-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor crystal and semiconductor device
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US7267875B2 (en) * 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same

Also Published As

Publication number Publication date
EP2052445A2 (en) 2009-04-29
WO2007106444A2 (en) 2007-09-20
NZ571290A (en) 2012-03-30
US20090304034A1 (en) 2009-12-10
JP2009530816A (en) 2009-08-27
EP2052445A4 (en) 2014-05-07
NZ594660A (en) 2013-09-27
US8284805B2 (en) 2012-10-09
AU2007225183A1 (en) 2007-09-20
CA2645416A1 (en) 2007-09-20
JP2014131067A (en) 2014-07-10
JP5758575B2 (en) 2015-08-05
NZ603670A (en) 2014-02-28
CA2645416C (en) 2017-02-14
AU2007225183B2 (en) 2013-01-17

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