WO2007097933A3 - Precision non-volatile cmos reference circuit - Google Patents

Precision non-volatile cmos reference circuit Download PDF

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Publication number
WO2007097933A3
WO2007097933A3 PCT/US2007/003610 US2007003610W WO2007097933A3 WO 2007097933 A3 WO2007097933 A3 WO 2007097933A3 US 2007003610 W US2007003610 W US 2007003610W WO 2007097933 A3 WO2007097933 A3 WO 2007097933A3
Authority
WO
WIPO (PCT)
Prior art keywords
reference circuit
voltage
nvm
transistor
ground
Prior art date
Application number
PCT/US2007/003610
Other languages
French (fr)
Other versions
WO2007097933A2 (en
Inventor
Alina I Negut
Sorin S Georgescu
Sabin Eftimie
Original Assignee
Catalyst Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/355,394 external-priority patent/US7245536B1/en
Application filed by Catalyst Semiconductor Inc filed Critical Catalyst Semiconductor Inc
Publication of WO2007097933A2 publication Critical patent/WO2007097933A2/en
Publication of WO2007097933A3 publication Critical patent/WO2007097933A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Abstract

A voltage reference circuit (100) provides a reference voltage that can be precisely programmed The threshold voltage of a first non-volatile memory CNVM) transistor (10) is programmed while coupled in parallel with a second NVM transistor (11) During programming, one or more capacitors (Cl) are connected between the floating gate (40) of the first NVM transistor (10) and ground, and one or more capacitors (C2B) are connected between the floating gate (41) of the second NVM transistor (11) and ground. The first and second NVM transistors (10, 11) are then coupled to a differential amplifier (35), which is used to generate a single-ended reference voltage in response to the programmed threshold voltage of the first NVM transistor Bipolar transistors are selectively switched between the various capacitors and ground, thereby providing precise adjustment of the temperature coefficient of the voltage reference circuit.
PCT/US2007/003610 2006-02-15 2007-02-09 Precision non-volatile cmos reference circuit WO2007097933A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/355,394 US7245536B1 (en) 2006-02-15 2006-02-15 Precision non-volatile CMOS reference circuit
US11/355,394 2006-02-15
US11/611,665 US7324380B2 (en) 2006-02-15 2006-12-15 Method for trimming the temperature coefficient of a floating gate voltage reference
US11/611,665 2006-12-15

Publications (2)

Publication Number Publication Date
WO2007097933A2 WO2007097933A2 (en) 2007-08-30
WO2007097933A3 true WO2007097933A3 (en) 2008-07-31

Family

ID=38437856

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/003610 WO2007097933A2 (en) 2006-02-15 2007-02-09 Precision non-volatile cmos reference circuit

Country Status (1)

Country Link
WO (1) WO2007097933A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11061452B2 (en) * 2019-09-13 2021-07-13 Silicon Laboratories Inc. Integrated circuit with enhanced operation over operating ranges utilizing a process signal to fine tune a voltage boosting operation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977527A (en) * 1988-04-14 1990-12-11 Fike Corporation Threshold compensation and calibration in distributed environmental detection system for fire detection and suppression
US6147908A (en) * 1997-11-03 2000-11-14 Cypress Semiconductor Corp. Stable adjustable programming voltage scheme
US6184726B1 (en) * 1998-06-30 2001-02-06 Sandisk Corporation Adjustable level shifter circuits for analog or multilevel memories
US6301156B1 (en) * 1999-11-09 2001-10-09 Fujitsu Limited Nonvolatile semiconductor memory device
US7256640B2 (en) * 2005-01-03 2007-08-14 Stmicroelectronics S.R.L. Multi-stage charge pump voltage generator with protection of the devices of the charge pump

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977527A (en) * 1988-04-14 1990-12-11 Fike Corporation Threshold compensation and calibration in distributed environmental detection system for fire detection and suppression
US6147908A (en) * 1997-11-03 2000-11-14 Cypress Semiconductor Corp. Stable adjustable programming voltage scheme
US6184726B1 (en) * 1998-06-30 2001-02-06 Sandisk Corporation Adjustable level shifter circuits for analog or multilevel memories
US6301156B1 (en) * 1999-11-09 2001-10-09 Fujitsu Limited Nonvolatile semiconductor memory device
US7256640B2 (en) * 2005-01-03 2007-08-14 Stmicroelectronics S.R.L. Multi-stage charge pump voltage generator with protection of the devices of the charge pump

Also Published As

Publication number Publication date
WO2007097933A2 (en) 2007-08-30

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