WO2007081807A3 - Iii-nitride power semiconductor with a field relaxation feature - Google Patents

Iii-nitride power semiconductor with a field relaxation feature Download PDF

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Publication number
WO2007081807A3
WO2007081807A3 PCT/US2007/000283 US2007000283W WO2007081807A3 WO 2007081807 A3 WO2007081807 A3 WO 2007081807A3 US 2007000283 W US2007000283 W US 2007000283W WO 2007081807 A3 WO2007081807 A3 WO 2007081807A3
Authority
WO
WIPO (PCT)
Prior art keywords
iii
power semiconductor
field relaxation
nitride power
relaxation feature
Prior art date
Application number
PCT/US2007/000283
Other languages
French (fr)
Other versions
WO2007081807A2 (en
Inventor
Robert Beach
Original Assignee
Int Rectifier Corp
Robert Beach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp, Robert Beach filed Critical Int Rectifier Corp
Priority to JP2008549577A priority Critical patent/JP2009522812A/en
Priority to DE112007000092.9T priority patent/DE112007000092B4/en
Publication of WO2007081807A2 publication Critical patent/WO2007081807A2/en
Publication of WO2007081807A3 publication Critical patent/WO2007081807A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A III-nitride power semiconductor device that includes a field relaxation feature to relax the electric fields around the gate thereof to improve the breakdown voltage of the device.
PCT/US2007/000283 2006-01-09 2007-01-08 Iii-nitride power semiconductor with a field relaxation feature WO2007081807A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008549577A JP2009522812A (en) 2006-01-09 2007-01-08 Group III nitride power semiconductor with electric field relaxation function
DE112007000092.9T DE112007000092B4 (en) 2006-01-09 2007-01-08 Group III nitride power semiconductors with a field relaxation feature

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75737006P 2006-01-09 2006-01-09
US60/757,370 2006-01-09

Publications (2)

Publication Number Publication Date
WO2007081807A2 WO2007081807A2 (en) 2007-07-19
WO2007081807A3 true WO2007081807A3 (en) 2008-01-24

Family

ID=38256927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/000283 WO2007081807A2 (en) 2006-01-09 2007-01-08 Iii-nitride power semiconductor with a field relaxation feature

Country Status (3)

Country Link
JP (1) JP2009522812A (en)
DE (1) DE112007000092B4 (en)
WO (1) WO2007081807A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120120829A (en) * 2011-04-25 2012-11-02 삼성전기주식회사 Nitride semiconductor device and manufacturing method thereof
JP5979836B2 (en) * 2011-09-09 2016-08-31 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of semiconductor device
US8969881B2 (en) * 2012-02-17 2015-03-03 International Rectifier Corporation Power transistor having segmented gate
KR101963218B1 (en) * 2012-08-16 2019-03-28 엘지이노텍 주식회사 Power semiconductor device
US9054027B2 (en) * 2013-05-03 2015-06-09 Texas Instruments Incorporated III-nitride device and method having a gate isolating structure
CN109103249A (en) * 2018-04-04 2018-12-28 北京大学 A kind of high current GaN high electron mobility transistor optimizing plane figure and structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US20030141512A1 (en) * 2002-01-31 2003-07-31 Georg Bruderl Semiconductor component and method for fabricating a semiconductor component
US20050048745A1 (en) * 2001-02-12 2005-03-03 Todd Michael A. Deposition over mixed substrates
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
US20050194612A1 (en) * 2004-01-23 2005-09-08 International Rectifier Corp. III-Nitride current control device and method of manufacture

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111985B2 (en) * 1998-06-16 2000-11-27 日本電気株式会社 Field-effect transistor
JP2001057426A (en) * 1999-06-10 2001-02-27 Fuji Electric Co Ltd High voltage semiconductor device and method for fabrication
JP4592938B2 (en) * 1999-12-08 2010-12-08 パナソニック株式会社 Semiconductor device
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP2002100640A (en) * 2000-09-22 2002-04-05 Fujitsu Ltd Field effect compound semiconductor device
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
US20050048745A1 (en) * 2001-02-12 2005-03-03 Todd Michael A. Deposition over mixed substrates
US20030141512A1 (en) * 2002-01-31 2003-07-31 Georg Bruderl Semiconductor component and method for fabricating a semiconductor component
US20050194612A1 (en) * 2004-01-23 2005-09-08 International Rectifier Corp. III-Nitride current control device and method of manufacture

Also Published As

Publication number Publication date
WO2007081807A2 (en) 2007-07-19
DE112007000092B4 (en) 2014-07-24
DE112007000092T5 (en) 2008-10-16
JP2009522812A (en) 2009-06-11

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