WO2007081807A2 - Iii-nitride power semiconductor with a field relaxation feature - Google Patents
Iii-nitride power semiconductor with a field relaxation feature Download PDFInfo
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- WO2007081807A2 WO2007081807A2 PCT/US2007/000283 US2007000283W WO2007081807A2 WO 2007081807 A2 WO2007081807 A2 WO 2007081807A2 US 2007000283 W US2007000283 W US 2007000283W WO 2007081807 A2 WO2007081807 A2 WO 2007081807A2
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- Prior art keywords
- semiconductor device
- power semiconductor
- guard rings
- nitride layer
- gate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000009413 insulation Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 239000002674 ointment Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004140 HfO Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- -1 such as Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A III-nitride power semiconductor device that includes a field relaxation feature to relax the electric fields around the gate thereof to improve the breakdown voltage of the device.
Description
m-NITRIDE POWER SEMICONDUCTOR WITH A FIELD RELAXATION FEATURE
RELATED APPLICATION
[0001] This application is based on and claims benefit of United States Provisional Application Serial No. 60/640,378, filed on December 30, 2004, entitled Ultra Resistive Field Plate, to which a claim of priority is hereby made and the disclosure of which is incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to a IE-nitride heteroj unction power semiconductor device.
[0003] m-nitride heterojunction power devices are well known. A typical Iϋ-nitride power semiconductor device includes a drain electrode, a source electrode and a gate electrode disposed between the drain electrode and the source electrode. The gate electrode controls the current between the source electrode and the drain electrode. To control the current in a high power application, a large negative voltage is applied to the gate electrode in order to change the voltage at the gate electrode rapidly. When a large voltage is applied to the gate electrode rapidly, a high voltage develops between the gate electrode and the drain electrode. The gate may be damaged if the voltage between the gate and the drain electrode exceeds the breakdown voltage of the gate.
[0004] The breakdown of the gate is facilitated by the development of large electric fields around the gate. Thus, it is desirable to reduce the intensity of the electric fields around the gate in order to increase the breakdown voltage of the device.
SUMMARY OF THE INVENTION
[0005] A power semiconductor device according to the present invention includes a HI- nitride based heterojunction, the heterojunction including a first IE-nitride layer having a first band gap, and a second IH-nitride layer having another band gap over the first IE-nitride layer, a first power electrode electrically connected to the second El-nitride layer, a second power electrode electrically connected to the second El-nitride layer, a gate structure disposed between the first power electrode and the second power electrode, and a field relaxation feature disposed over the second El-nitride layer adjacent the gate structure.
[0006] In one embodiment of the present invention the field relaxation feature includes an ultra resistive field plate.
[0007] In an alternative embodiment, the field plate is disposed over the second Hi-nitride layer. In one variation of this embodiment, the gate structure is disposed on the field plate and the second El-mtride layer. In another variation, the gate structure is disposed on the field plate. The field plate may formed with a silicon rich SiN, or a compensated El-nitride semiconductor.
[0008] In another embodiment, a plurality of floating field rings may be disposed around the gate structure. In a variation of this embodiment the floating field rings may be disposed over the field plate. The guard rings may be coplanar with one another or non-coplanar, and also the guard rings may be coplanar with the gate structure or not. In addition, the guard rings may be independently floating, shorted to one another, shorted to the gate structure, or shorted to one of the power electrodes.
[0009] Other features, embodiments and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
BRIEF DESCRIPTION UF 1 tit, JJKAWINGS
[0010] Figure 1 shows a top plan view of two adjacently disposed active cells of a device according to the first embodiment of the present invention.
[0011] Figure 2 shows a cross-sectional view of a device according to the first embodiment along line A-A viewed in the direction of the arrows.
[0012] Figure 3 shows a top plan view of two adjacently disposed active cells of a device according to the second embodiment of the present invention.
[0013] Figure 4 shows a cross-sectional view of a device according to the second embodiment along line B-B viewed in the direction of the arrows.
[0014] Figure 5 shows a cross-sectional view of a device according to the third embodiment.
[0015] Figure 6 shows a cross-sectional view of a device according to the fourth embodiment.
[0016] Figure 7 shows a top plan view of two adjacently disposed active cells of a device according to the fifth embodiment of the present invention.
[0017] Figure 8 shows a cross-sectional view of a device according to the fifth embodiment along line C-C viewed in the direction of the arrows.
[0018] Figure 9 shows a cross-sectional view of a device according to the sixth embodiment.
[0019] Figure 10 shows a cross-sectional view of a device according to the seventh embodiment.
[0020] Figure 11 shows a cross-sectional view of a device according to the eighth embodiment.
[0021] Figure 12 shows a cross-sectional view of a device according to the ninth embodiment.
[0022] Figure 13 shows a cross-sectional view of a device according to the tenth embodiment.
[0023] Figure 14 shows a cross-sectional view of a device according to the eleventh embodiment.
[0024] Figure 15 shows a cross-sectional view of a device according to the twelfth embodiment.
DETAILED DESCRIPTION QF THE EMBODIMENTS
[0025] Referring to Figures 1 and 2, a power semiconductor device according to the first embodiment of the present invention includes a m-nitride based heterojunction 10 disposed over a support body 12. Heterojunction 10 includes a first IH-nitride semiconductor body 14, and a second Hi-nitride semiconductor body 16 over first m-nitride semiconductor body 14. A first power electrode 18 (i.e. source electrode) and a second power electrode 20 (i.e. drain electrode) are electrically connected to second lH-nitride semiconductor body 16 through a direct ohmic connection or any other suitable means. A gate structure 22 is disposed between first power electrode 18 and second power electrode 20 over second IH-nitride semiconductor body 14. In the preferred embodiment of the present invention, gate structure 22 includes a gate electrode which is connected to second O-nitride semiconductor layer 16 through a schottky contact. Alternatively, gate structure 22 may include a gate electrode, which is capacitively connected to second Hi-nitride semiconductor body through a gate insulation body. It should also be noted that gate structure 22 is disposed around first power electrode 18, and, thus can be operated to turn the channel between second power electrodes 20, 20' simultaneously.
[0026] According to one aspect of the present invention a field relaxation feature 24 is disposed over second IQ-nitride layer 16 adjacent gate structure 22 and between gate structure 22 and second power electrode 20. In the preferred embodiment of the present invention, field relaxation feature 24 is an ultra resistive field plate 25 formed with a highly electrically resistive material, such as, silicon rich SiN, compensated GaN or the like material. [0027] In the first embodiment of the present invention, gate structure 22 is disposed on field plate 25 and second M-nitride semiconductor body 14. That is, field plate 25 extends beneath a portion of gate structure 22.
[0028] Referring to Figures 3 and 4, in a power semiconductor device according to the second embodiment of the present invention, gate structure 22 is disposed on field plate 25 only. A power semiconductor device according to the third embodiment of the present invention further includes a plurality of spaced guard rings 26 disposed between gate structure 22 and second power electrode 20. It should be noted that guard rings 26 are disposed around gate structure 22 (see Figure 3).
[0029] Referring next to Figure 5, in a power semiconductor device according to the third embodiment of the present invention, a gate insulation body 28 is interposed between second Hl-nitiϊde semiconductor body 16, and gate structure 22 and field relaxation feature 24. Note that in the third embodiment, gate structure 22 is a gate electrode which is capacitively connected to second Hi-nitride semiconductor body 16 through gate insulation 28. [0030] Referring to Figure 6, in a power semiconductor device according to the fourth embodiment of the present invention gate insulation body 28 is interposed between field relaxation feature 24 and second m-nitride semiconductor body 16. Similar to the second embodiment, gate structure 22 is disposed on field plate 25 only, unlike the third embodiment in which gate structure 22 and field plate 25 are both disposed on gate insulation body 28. Similar to the third embodiment, gate structure 22 in the fourth embodiment is a gate electrode which is capacitively connected to second IE-nitride semiconductor body 16 through field plate 24, and gate insulation body 28.
[0031] Referring next to Figures 7 and 8, the field relaxation feature in a power semiconductor device according to the fifth embodiment is a plurality of spaced guard rings 26, which are disposed on second Hi-nitride semiconductor body 16 between gate structure 22, and second power electrode 20, and disposed around gate structure 22. [0032] Referring to Figure 9, in the sixth embodiment of the present invention, gate insulation body 28 is interposed between second Hi-nitride semiconductor body 16, guard rings 26 and gate structure 22.
[0033] In the seventh embodiment of the present invention, as seen in Figure 10, gate structure 22 is disposed on second Hi-nitride semiconductor body 16, while guard rings 26 are
disposed on gate insulation body ZS. ihus, unlike the fifth and sixth embodiments, guard rings 26 and gate structure 22 are not coplanar. Preferably, gate structure 22 includes a gate electrode which is electrically connected to second Ill-nitride semiconductor body 16 through a schottky connection.
[0034] Referring next to Figure 11, a power semiconductor device according to the eighth embodiment includes all the features of the sixth embodiment (Figure 9) and further includes a field insulation body 30 interposed between gate insulation body 28 and guard rings 26.
Thus, similar to the seventh embodiment (Figure 10), guard rings 26 and gate structure 22 are not coplanar.
[0035] Referring next to Figure 12, a device according to the ninth embodiment of the present invention includes all of the features of the eighth embodiment except that field insulation 30 in the ninth embodiment beneath guard rings 26 is stepped thereby rendering guard rings 26 non-coplanar. That is, unlike guard rings 26 in the eighth embodiment, guard rings 26 in the ninth embodiment are not coplanar.
[0036] In the embodiments discussed above, guard rings 26 are independently floating. That is, guard rings 26 are not referenced to another potential, but are each floating.
[0037] Referring to Figure 13, in a device according to the tenth embodiment, guard rings 26 are shorted to one another, whereby all guard rings 26 are referenced to and floating at the same potential, rather than being independently floating.
[0038] Referring to Figure 14, in a device according to the eleventh embodiment of the present invention, guard rings 26 can be shorted to one another and shorted to first power electrode 18. Thus, guard rings 26 can be referenced to the potential of first power electrode
18.
[0039] Referring next to Figure 15, in a device according to the twelfth embodiment of the present invention, guard rings 26 are shorted to one another, and shorted to gate structure 22.
Thus, guard rings 26 are referenced to the same potential as gate structure 22.
[0040] In a device according to any one of the embodiments of the present invention, first UI- nitride semiconductor body is an alloy from the InAlGaN system, such as GaN, and second
DI-nitride semiconductor body 16 is another alloy from the InAlGaN system having a band gap that is different from that of first IH-nitride semiconductor 14, whereby a two- dimensional electron gas is formed due to the heterojunction of the first and the second Ill- nitride semiconductor bodies as is well known in the art. For example, second IH-nitride semiconductor body may be formed with AlGaN.
[0041] In addition, support body 12 is a combination of a substrate material and if required a buffer layer on the substrate to compensate for the lattice and thermal mismatch between the substrate and first IH-mtride semiconductor body 14. For economic reasons, the preferred material for the substrate is silicon. Other substrate materials such as sapphire, and SiC can also be used without deviating from the scope and the spirit of the present invention. [0042] AlN is a preferred material for a buffer layer. However, a multi-layer or graded transitional Dl-nitride semiconductor body may also be used as a buffer layer without deviating from the scope and the spirit of the present invention.
[0043] It is also possible to have the substrate made from the same material as first IH-nitride semiconductor body and thus avoid the need for a buffer layer. For example, a GaN substrate may be used when first HL-nitride semiconductor body 14 is formed with GaN. [0044] The gate electrode may be composed of n type or p type silicon, or polysilicon of any desired conductivity, and may further include an aluminum, Ti/ Al, or other metallic layer over the top surface thereof. Ohmic electrodes may be composed of Ti/ Al and may further include other metallic bodies over the top surface thereof such as Ti/TiW, Ni/ Au, Mo/ Au, or the like. Gate insulation body 28 may be composed of SiN, Al2O3, SiO2, HfO, MgO, Sc2O3, or the like. Field insulation body 30 may be composed of SiO2, SiN, Al2O3, HfO, MgO, Sc2O3, or the like. Guard rings 26 are preferably made of the same material as that used for the gate electrode to allow for single step fabrication of the gate electrode and guard rings 26. [0045] Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.
Claims
1. A power semiconductor device comprising: a Hi-nitride based heteroj unction, said heterojunction including a first Hi-nitride layer having a band gap, and a second Id-nitride layer having another band gap over said first HE-nitride layer; a first power electrode electrically connected to said second IH-nitride layer; a second power electrode electrically connected to said second IH-nitride layer; a gate structure disposed between said first power electrode and said second power electrode; and a field relaxation feature disposed over said second JH-nitride layer adj acent said gate structure.
2. The power semiconductor device of claim 1, wherein said field relaxation feature includes an ultra resistive field plate.
3. The power semiconductor device of claim 2, wherein said field plate is disposed over said second IH-nitride layer.
4. The power semiconductor device of claim 3, wherein said gate structure is disposed on said field plate and said second IH-nitride layer.
5. The power semiconductor device of claim 3, wherein said gate structure is disposed on said field plate.
6. The power semiconductor device of claim 2, wherein said field plate is comprised of silicon rich SiN.
7. ihe power semiconductor device of claim 2, wherein said field plate is comprised of a compensated Hi-nitride semiconductor.
8. The power semiconductor device of claim 2, further comprising a plurality of floating field rings disposed over said field plate.
9. The power semiconductor device of claim 1, wherein said first Hi-nitride layer is comprised of GaN and said second IE-nitride layer is comprised of AlGaN.
10. The power semiconductor device of claim 1 , further comprising a base that includes a substrate, and a buffer layer disposed over said substrate and under said first m- nitride layer.
11. The power semiconductor device of claim 2, wherein said gate structure includes a gate insulation body.
12. The power semiconductor device of claim 11, wherein said gate insulation body is disposed between said field plate and said second Hi-nitride layer.
13. The power semiconductor device of claim 12, further comprising a plurality of floating field rings disposed over said field plate.
14. The power semiconductor device of claim 1, wherein said field relaxation feature includes a plurality of spaced guard rings.
15. The power semiconductor device of claim 14, wherein said guard rings are disposed over said second IQ-nitride layer.
16. The power semiconductor device of claim 14, wherein said gate structure includes a gate insulation body, and said guard rings are disposed over said gate insulation body.
17. The power semiconductor device of claiml4, wherein said guard rings are disposed on an insulation body.
18. The power semiconductor device of claim 17, wherein said gate structure includes a gate insulation body and said insulation body is disposed over said gate insulation body.
19. The power semiconductor device of claim 18, wherein said guard rings are coplanar.
20. The power semiconductor device of claim 18, wherein said guard rings are non-coplanar.
21. The power semiconductor device of claim 20, wherein said guard rings are shorted to one another.
22. The power semiconductor device of claim 20, wherein said guard rings are floating.
23. The power semiconductor device of claim 20, wherein said guard rings are shorted to one of said power electrodes.
24. The power semiconductor device of claim 20, wherein said gate structure includes a gate electrode and said guard rings are shorted to said gate electrode.
25. i ne power semiconductor device of claim 14, wherein said guard rings are coplanar.
26. The power semiconductor device of claim 14, wherein said guard rings are non-coplanar.
27. The power semiconductor device of claim 14, wherein said guard rings are shorted to one another.
28. The power semiconductor device of claim 14, wherein said guard rings are floating.
29. The power semiconductor device of claim 14 wherein said guard rings are shorted to one of said power electrodes.
30. The power semiconductor device of claim 14, wherein said gate structure includes a gate electrode and said guard rings are shorted to said gate electrode.
31. The power semiconductor device of claim 14. wherein said first Ul-nitride layer is comprised of GaN and said second Ul-nitride is comprised of AlGaN.
32. The power semiconductor device of claim 14, further comprising a base that includes a substrate, and a buffer layer disposed over said substrate and under said first III- nitride layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008549577A JP2009522812A (en) | 2006-01-09 | 2007-01-08 | Group III nitride power semiconductor with electric field relaxation function |
| DE112007000092.9T DE112007000092B4 (en) | 2006-01-09 | 2007-01-08 | Group III nitride power semiconductors with a field relaxation feature |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75737006P | 2006-01-09 | 2006-01-09 | |
| US60/757,370 | 2006-01-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2007081807A2 true WO2007081807A2 (en) | 2007-07-19 |
| WO2007081807A3 WO2007081807A3 (en) | 2008-01-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2007/000283 WO2007081807A2 (en) | 2006-01-09 | 2007-01-08 | Iii-nitride power semiconductor with a field relaxation feature |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009522812A (en) |
| DE (1) | DE112007000092B4 (en) |
| WO (1) | WO2007081807A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8969881B2 (en) | 2012-02-17 | 2015-03-03 | International Rectifier Corporation | Power transistor having segmented gate |
| CN109103249A (en) * | 2018-04-04 | 2018-12-28 | 北京大学 | A kind of high current GaN high electron mobility transistor optimizing plane figure and structure |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120120829A (en) * | 2011-04-25 | 2012-11-02 | 삼성전기주식회사 | Nitride semiconductor device and manufacturing method thereof |
| JP5979836B2 (en) * | 2011-09-09 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| KR101963218B1 (en) * | 2012-08-16 | 2019-03-28 | 엘지이노텍 주식회사 | Power semiconductor device |
| US9054027B2 (en) * | 2013-05-03 | 2015-06-09 | Texas Instruments Incorporated | III-nitride device and method having a gate isolating structure |
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- 2007-01-08 WO PCT/US2007/000283 patent/WO2007081807A2/en active Application Filing
- 2007-01-08 DE DE112007000092.9T patent/DE112007000092B4/en active Active
- 2007-01-08 JP JP2008549577A patent/JP2009522812A/en active Pending
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| US20050194612A1 (en) * | 2004-01-23 | 2005-09-08 | International Rectifier Corp. | III-Nitride current control device and method of manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8969881B2 (en) | 2012-02-17 | 2015-03-03 | International Rectifier Corporation | Power transistor having segmented gate |
| CN109103249A (en) * | 2018-04-04 | 2018-12-28 | 北京大学 | A kind of high current GaN high electron mobility transistor optimizing plane figure and structure |
Also Published As
| Publication number | Publication date |
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| DE112007000092B4 (en) | 2014-07-24 |
| WO2007081807A3 (en) | 2008-01-24 |
| DE112007000092T5 (en) | 2008-10-16 |
| JP2009522812A (en) | 2009-06-11 |
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