WO2007076008A3 - Electronic device including a poled superlattice having a net electrical dipole moment and associated methods - Google Patents
Electronic device including a poled superlattice having a net electrical dipole moment and associated methods Download PDFInfo
- Publication number
- WO2007076008A3 WO2007076008A3 PCT/US2006/049009 US2006049009W WO2007076008A3 WO 2007076008 A3 WO2007076008 A3 WO 2007076008A3 US 2006049009 W US2006049009 W US 2006049009W WO 2007076008 A3 WO2007076008 A3 WO 2007076008A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- electronic device
- dipole moment
- poled superlattice
- net electrical
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 8
- 239000002356 single layer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Selection of materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Abstract
An electronic device may include a poled superlattice comprising a plurality of stacked groups of layers and having a net electrical dipole moment. Each group of layers of the poled superlattice may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The electronic device may further include at least one electrode coupled to the poled superlattice.
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75314105P | 2005-12-22 | 2005-12-22 | |
US75299005P | 2005-12-22 | 2005-12-22 | |
US75298405P | 2005-12-22 | 2005-12-22 | |
US75314205P | 2005-12-22 | 2005-12-22 | |
US75314305P | 2005-12-22 | 2005-12-22 | |
US75312005P | 2005-12-22 | 2005-12-22 | |
US75298505P | 2005-12-22 | 2005-12-22 | |
US60/753,120 | 2005-12-22 | ||
US60/753,142 | 2005-12-22 | ||
US60/752,984 | 2005-12-22 | ||
US60/752,985 | 2005-12-22 | ||
US60/753,141 | 2005-12-22 | ||
US60/752,990 | 2005-12-22 | ||
US60/753,143 | 2005-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007076008A2 WO2007076008A2 (en) | 2007-07-05 |
WO2007076008A3 true WO2007076008A3 (en) | 2007-09-20 |
Family
ID=38093051
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/048890 WO2007075942A2 (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice and associated methods |
PCT/US2006/049009 WO2007076008A2 (en) | 2005-12-22 | 2006-12-21 | Electronic device including a poled superlattice having a net electrical dipole moment and associated methods |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/048890 WO2007075942A2 (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice and associated methods |
Country Status (3)
Country | Link |
---|---|
US (4) | US20070187667A1 (en) |
TW (4) | TW200746237A (en) |
WO (2) | WO2007075942A2 (en) |
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US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
US20070187667A1 (en) * | 2005-12-22 | 2007-08-16 | Rj Mears, Llc | Electronic device including a selectively polable superlattice |
JP2010287744A (en) * | 2009-06-11 | 2010-12-24 | Elpida Memory Inc | Solid-state memory, data processing system, and data processing apparatus |
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CN105900241B (en) | 2013-11-22 | 2020-07-24 | 阿托梅拉公司 | Semiconductor device including superlattice depletion layer stack and related methods |
KR101855023B1 (en) | 2013-11-22 | 2018-05-04 | 아토메라 인코포레이티드 | Vertical semiconductor devices including superlattice punch through stop layer and related methods |
KR102439708B1 (en) | 2014-05-27 | 2022-09-02 | 실라나 유브이 테크놀로지스 피티이 리미티드 | An optoelectronic device |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
WO2015181657A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Advanced electronic device structures using semiconductor structures and superlattices |
JP6986349B2 (en) | 2014-05-27 | 2021-12-22 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | Electronic device with n-type superlattice and p-type superlattice |
WO2015191561A1 (en) | 2014-06-09 | 2015-12-17 | Mears Technologies, Inc. | Semiconductor devices with enhanced deterministic doping and related methods |
DE102014109147A1 (en) * | 2014-06-30 | 2015-12-31 | Infineon Technologies Ag | Field effect semiconductor device and method for its operation and production |
US9722046B2 (en) | 2014-11-25 | 2017-08-01 | Atomera Incorporated | Semiconductor device including a superlattice and replacement metal gate structure and related methods |
US9899479B2 (en) | 2015-05-15 | 2018-02-20 | Atomera Incorporated | Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods |
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KR20180097377A (en) * | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | Ferroelectric Memory Device and Method of Manufacturing the same |
US10614868B2 (en) * | 2018-04-16 | 2020-04-07 | Samsung Electronics Co., Ltd. | Memory device with strong polarization coupling |
EP4295409A1 (en) * | 2021-03-03 | 2023-12-27 | Atomera Incorporated | Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice and associated methods |
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-
2006
- 2006-12-21 US US11/614,535 patent/US20070187667A1/en not_active Abandoned
- 2006-12-21 TW TW095148202A patent/TW200746237A/en unknown
- 2006-12-21 TW TW095148199A patent/TW200733379A/en unknown
- 2006-12-21 TW TW095148208A patent/TWI334646B/en active
- 2006-12-21 WO PCT/US2006/048890 patent/WO2007075942A2/en active Application Filing
- 2006-12-21 WO PCT/US2006/049009 patent/WO2007076008A2/en active Application Filing
- 2006-12-21 US US11/614,477 patent/US20070158640A1/en not_active Abandoned
- 2006-12-21 TW TW095148211A patent/TWI316294B/en active
- 2006-12-21 US US11/614,559 patent/US20070166928A1/en not_active Abandoned
-
2010
- 2010-05-18 US US12/782,211 patent/US20100270535A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590399A (en) * | 1984-02-28 | 1986-05-20 | Exxon Research And Engineering Co. | Superlattice piezoelectric devices |
WO1996029728A1 (en) * | 1995-03-17 | 1996-09-26 | Matsushita Electronics Corporation | Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
WO2005034245A1 (en) * | 2003-06-26 | 2005-04-14 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
Also Published As
Publication number | Publication date |
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WO2007075942A2 (en) | 2007-07-05 |
US20070158640A1 (en) | 2007-07-12 |
TW200733379A (en) | 2007-09-01 |
US20100270535A1 (en) | 2010-10-28 |
TWI316294B (en) | 2009-10-21 |
TWI334646B (en) | 2010-12-11 |
US20070187667A1 (en) | 2007-08-16 |
TW200746237A (en) | 2007-12-16 |
WO2007076008A2 (en) | 2007-07-05 |
TW200742060A (en) | 2007-11-01 |
WO2007075942A3 (en) | 2007-09-13 |
US20070166928A1 (en) | 2007-07-19 |
TW200742059A (en) | 2007-11-01 |
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