WO2007075942A3 - Electronic device including a selectively polable superlattice and associated methods - Google Patents

Electronic device including a selectively polable superlattice and associated methods Download PDF

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Publication number
WO2007075942A3
WO2007075942A3 PCT/US2006/048890 US2006048890W WO2007075942A3 WO 2007075942 A3 WO2007075942 A3 WO 2007075942A3 US 2006048890 W US2006048890 W US 2006048890W WO 2007075942 A3 WO2007075942 A3 WO 2007075942A3
Authority
WO
WIPO (PCT)
Prior art keywords
selectively
polable
superlattice
semiconductor
electronic device
Prior art date
Application number
PCT/US2006/048890
Other languages
French (fr)
Other versions
WO2007075942A2 (en
Inventor
Samed Halilov
Xiangyang Huang
Ilija Dukovski
Jean Augustin Chan Sow Yiptong
Robert J Mears
Marek Hytha
Robert John Stephenson
Original Assignee
Rj Mears Llc
Samed Halilov
Xiangyang Huang
Ilija Dukovski
Jean Augustin Chan Sow Yiptong
Robert J Mears
Marek Hytha
Robert John Stephenson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rj Mears Llc, Samed Halilov, Xiangyang Huang, Ilija Dukovski, Jean Augustin Chan Sow Yiptong, Robert J Mears, Marek Hytha, Robert John Stephenson filed Critical Rj Mears Llc
Publication of WO2007075942A2 publication Critical patent/WO2007075942A2/en
Publication of WO2007075942A3 publication Critical patent/WO2007075942A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Selection of materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

An electronic device may include a selectively polable superlattice comprising a plurality of stacked groups of layers. Each group of layers of the selectively polable superlattice may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The electronic device may also include at least one electrode for selectively poling the selectively polable superlattice.
PCT/US2006/048890 2005-12-22 2006-12-21 Electronic device including a selectively polable superlattice and associated methods WO2007075942A2 (en)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US75312005P 2005-12-22 2005-12-22
US75314105P 2005-12-22 2005-12-22
US75298505P 2005-12-22 2005-12-22
US75314305P 2005-12-22 2005-12-22
US75314205P 2005-12-22 2005-12-22
US75299005P 2005-12-22 2005-12-22
US75298405P 2005-12-22 2005-12-22
US60/752,985 2005-12-22
US60/753,143 2005-12-22
US60/753,142 2005-12-22
US60/753,120 2005-12-22
US60/752,984 2005-12-22
US60/753,141 2005-12-22
US60/752,990 2005-12-22

Publications (2)

Publication Number Publication Date
WO2007075942A2 WO2007075942A2 (en) 2007-07-05
WO2007075942A3 true WO2007075942A3 (en) 2007-09-13

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PCT/US2006/048890 WO2007075942A2 (en) 2005-12-22 2006-12-21 Electronic device including a selectively polable superlattice and associated methods
PCT/US2006/049009 WO2007076008A2 (en) 2005-12-22 2006-12-21 Electronic device including a poled superlattice having a net electrical dipole moment and associated methods

Family Applications After (1)

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PCT/US2006/049009 WO2007076008A2 (en) 2005-12-22 2006-12-21 Electronic device including a poled superlattice having a net electrical dipole moment and associated methods

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US (4) US20070187667A1 (en)
TW (4) TWI316294B (en)
WO (2) WO2007075942A2 (en)

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KR101855023B1 (en) 2013-11-22 2018-05-04 아토메라 인코포레이티드 Vertical semiconductor devices including superlattice punch through stop layer and related methods
JP6817072B2 (en) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ Optoelectronic device
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WO2015181656A1 (en) * 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
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TW200742059A (en) 2007-11-01
US20100270535A1 (en) 2010-10-28
TWI316294B (en) 2009-10-21
TW200733379A (en) 2007-09-01
US20070187667A1 (en) 2007-08-16
WO2007076008A2 (en) 2007-07-05
US20070158640A1 (en) 2007-07-12
WO2007076008A3 (en) 2007-09-20
US20070166928A1 (en) 2007-07-19
TW200746237A (en) 2007-12-16
TW200742060A (en) 2007-11-01
TWI334646B (en) 2010-12-11
WO2007075942A2 (en) 2007-07-05

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