WO2007067604A3 - Method of making undoped, alloyed and doped chalcogenide films by mocvd processes - Google Patents

Method of making undoped, alloyed and doped chalcogenide films by mocvd processes Download PDF

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Publication number
WO2007067604A3
WO2007067604A3 PCT/US2006/046524 US2006046524W WO2007067604A3 WO 2007067604 A3 WO2007067604 A3 WO 2007067604A3 US 2006046524 W US2006046524 W US 2006046524W WO 2007067604 A3 WO2007067604 A3 WO 2007067604A3
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WO
WIPO (PCT)
Prior art keywords
alloyed
doped chalcogenide
films
chalcogenide films
undoped
Prior art date
Application number
PCT/US2006/046524
Other languages
French (fr)
Other versions
WO2007067604A2 (en
Inventor
Edwin M Dons
Gary S Tompa
Catherine E Rice
Joseph D Cuchiaro
Original Assignee
Structured Materials Inc
Edwin M Dons
Gary S Tompa
Catherine E Rice
Joseph D Cuchiaro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Structured Materials Inc, Edwin M Dons, Gary S Tompa, Catherine E Rice, Joseph D Cuchiaro filed Critical Structured Materials Inc
Publication of WO2007067604A2 publication Critical patent/WO2007067604A2/en
Publication of WO2007067604A3 publication Critical patent/WO2007067604A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312

Abstract

A method of making Undoped, Alloyed and Doped Chalcogenide Films by CVD and particularly a film of GeSbTe which is a phase change material. These films are useful in electronic memory devices and other applications. In the method gas or vapor phase precursors of the elements are transported to a reaction chamber where they are deposited on a heated substrate under controlled conditions.
PCT/US2006/046524 2005-12-06 2006-12-06 Method of making undoped, alloyed and doped chalcogenide films by mocvd processes WO2007067604A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74269105P 2005-12-06 2005-12-06
US60/742,691 2005-12-06

Publications (2)

Publication Number Publication Date
WO2007067604A2 WO2007067604A2 (en) 2007-06-14
WO2007067604A3 true WO2007067604A3 (en) 2008-01-03

Family

ID=38123449

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/046524 WO2007067604A2 (en) 2005-12-06 2006-12-06 Method of making undoped, alloyed and doped chalcogenide films by mocvd processes

Country Status (1)

Country Link
WO (1) WO2007067604A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2018642A4 (en) 2006-05-12 2009-05-27 Advanced Tech Materials Low temperature deposition of phase change memory materials
EP2511280A1 (en) 2006-11-02 2012-10-17 Advanced Technology Materials, Inc. Germanium amidinate complexes useful for CVD/ALD of metal thin films
US7749802B2 (en) * 2007-01-09 2010-07-06 International Business Machines Corporation Process for chemical vapor deposition of materials with via filling capability and structure formed thereby
TWI471449B (en) 2007-09-17 2015-02-01 Air Liquide Tellurium precursors for gst film deposition
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
KR101458953B1 (en) 2007-10-11 2014-11-07 삼성전자주식회사 Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device
WO2009051799A1 (en) * 2007-10-18 2009-04-23 Structured Materials Inc. Germanium sulfide compounds for solid electrolytic memory elements
SG152203A1 (en) 2007-10-31 2009-05-29 Advanced Tech Materials Amorphous ge/te deposition process
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
KR101489327B1 (en) * 2008-05-15 2015-02-03 삼성전자주식회사 Method of forming a material layer and method of fabricating a memory device
JP2011522120A (en) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Tellurium precursors for film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
JP2013503849A (en) 2009-09-02 2013-02-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Germanium (II) dihalide precursor for deposition of germanium-containing films
KR20120123126A (en) 2010-02-03 2012-11-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
CN113969395B (en) * 2021-09-14 2023-09-08 上海交大平湖智能光电研究院 Preparation method of phase-change film based on pulse laser deposition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431738A (en) * 1991-03-19 1995-07-11 Fujitsu Limited Apparatus for growing group II-VI mixed compound semiconductor
US5753936A (en) * 1978-05-04 1998-05-19 Canon Kabushiki Kaisha Image forming member for electrophotography
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US20040168626A1 (en) * 2001-07-20 2004-09-02 Peter Moeck Process for forming semiconductor quantum dots with superior structural and phological stability
US20040231590A1 (en) * 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753936A (en) * 1978-05-04 1998-05-19 Canon Kabushiki Kaisha Image forming member for electrophotography
US5431738A (en) * 1991-03-19 1995-07-11 Fujitsu Limited Apparatus for growing group II-VI mixed compound semiconductor
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US20040168626A1 (en) * 2001-07-20 2004-09-02 Peter Moeck Process for forming semiconductor quantum dots with superior structural and phological stability
US20040231590A1 (en) * 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates

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Publication number Publication date
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