WO2007067294A3 - Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios - Google Patents
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios Download PDFInfo
- Publication number
- WO2007067294A3 WO2007067294A3 PCT/US2006/043481 US2006043481W WO2007067294A3 WO 2007067294 A3 WO2007067294 A3 WO 2007067294A3 US 2006043481 W US2006043481 W US 2006043481W WO 2007067294 A3 WO2007067294 A3 WO 2007067294A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing composition
- silicon oxide
- silicon nitride
- removal rate
- oxide removal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Abstract
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008544344A JP5188980B2 (en) | 2005-12-06 | 2006-11-08 | Polishing composition and polishing method having high silicon nitride / silicon oxide removal rate ratio |
CN2006800460511A CN102046743B (en) | 2005-12-06 | 2006-11-08 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
KR1020087013557A KR101309324B1 (en) | 2005-12-06 | 2006-11-08 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/294,853 US7531105B2 (en) | 2004-11-05 | 2005-12-06 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US11/294,853 | 2005-12-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007067294A2 WO2007067294A2 (en) | 2007-06-14 |
WO2007067294A3 true WO2007067294A3 (en) | 2011-07-28 |
Family
ID=37964658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/043481 WO2007067294A2 (en) | 2005-12-06 | 2006-11-08 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
Country Status (6)
Country | Link |
---|---|
US (2) | US7531105B2 (en) |
JP (1) | JP5188980B2 (en) |
KR (1) | KR101309324B1 (en) |
CN (1) | CN102046743B (en) |
TW (1) | TWI347356B (en) |
WO (1) | WO2007067294A2 (en) |
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US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
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KR102434586B1 (en) * | 2015-08-06 | 2022-08-23 | 주식회사 케이씨텍 | Multi-function polishing slurry composition |
US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
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US10316218B2 (en) | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
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US11186748B2 (en) | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
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US10508221B2 (en) | 2017-09-28 | 2019-12-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them |
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2005
- 2005-12-06 US US11/294,853 patent/US7531105B2/en active Active
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2006
- 2006-11-08 WO PCT/US2006/043481 patent/WO2007067294A2/en active Application Filing
- 2006-11-08 JP JP2008544344A patent/JP5188980B2/en active Active
- 2006-11-08 CN CN2006800460511A patent/CN102046743B/en active Active
- 2006-11-08 KR KR1020087013557A patent/KR101309324B1/en active IP Right Grant
- 2006-11-24 TW TW095143606A patent/TWI347356B/en active
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2009
- 2009-04-02 US US12/384,266 patent/US8138091B2/en active Active
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US20050215183A1 (en) * | 2003-10-10 | 2005-09-29 | Siddiqui Junaid A | Chemical-mechanical planarization composition having PVNO and associated method for use |
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CN102046743B (en) | 2012-10-31 |
US8138091B2 (en) | 2012-03-20 |
KR101309324B1 (en) | 2013-09-16 |
TWI347356B (en) | 2011-08-21 |
US20060108326A1 (en) | 2006-05-25 |
TW200732460A (en) | 2007-09-01 |
JP5188980B2 (en) | 2013-04-24 |
US7531105B2 (en) | 2009-05-12 |
WO2007067294A2 (en) | 2007-06-14 |
JP2009518855A (en) | 2009-05-07 |
CN102046743A (en) | 2011-05-04 |
US20090215271A1 (en) | 2009-08-27 |
KR20080078818A (en) | 2008-08-28 |
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