WO2007053571A3 - Thermal interface material with multiple size distribution thermally conductive fillers - Google Patents
Thermal interface material with multiple size distribution thermally conductive fillers Download PDFInfo
- Publication number
- WO2007053571A3 WO2007053571A3 PCT/US2006/042362 US2006042362W WO2007053571A3 WO 2007053571 A3 WO2007053571 A3 WO 2007053571A3 US 2006042362 W US2006042362 W US 2006042362W WO 2007053571 A3 WO2007053571 A3 WO 2007053571A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermally conductive
- thermal interface
- size distribution
- interface material
- conductive fillers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
A thermal interface material including a matrix and a thermally conductive filler. The thermally conductive filler includes first and a second thermally conductive particulate materials having different particle size distribution. A maximum particle size of the thermally conductive filler may be established by excluding particles having a size greater than a predetermined particle size from the thermally conductive filler.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06817447A EP1839469A2 (en) | 2005-11-01 | 2006-11-01 | Thermal interface material with multiple size distribution thermally conductive fillers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73206205P | 2005-11-01 | 2005-11-01 | |
US60/732,062 | 2005-11-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007053571A2 WO2007053571A2 (en) | 2007-05-10 |
WO2007053571A3 true WO2007053571A3 (en) | 2008-06-19 |
Family
ID=38006443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/042362 WO2007053571A2 (en) | 2005-11-01 | 2006-11-01 | Thermal interface material with multiple size distribution thermally conductive fillers |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070097651A1 (en) |
EP (1) | EP1839469A2 (en) |
CN (1) | CN101288353A (en) |
WO (1) | WO2007053571A2 (en) |
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US20070178255A1 (en) * | 2006-01-31 | 2007-08-02 | Farrow Timothy S | Apparatus, system, and method for thermal conduction interfacing |
US7462294B2 (en) * | 2007-04-25 | 2008-12-09 | International Business Machines Corporation | Enhanced thermal conducting formulations |
ATE500596T1 (en) * | 2007-10-08 | 2011-03-15 | Abb Research Ltd | ELECTRICAL POLYMER CONCRETE INSULATION SYSTEM |
US8344438B2 (en) * | 2008-01-31 | 2013-01-01 | Qimonda Ag | Electrode of an integrated circuit |
US9353304B2 (en) | 2009-03-02 | 2016-05-31 | Honeywell International Inc. | Thermal interface material and method of making and using the same |
US9751264B2 (en) * | 2009-10-09 | 2017-09-05 | Alcatel-Lucent Usa Inc. | Thermal interface device |
US9260645B2 (en) * | 2010-02-23 | 2016-02-16 | Laird Technologies, Inc. | Thermal interface materials including thermally reversible gels |
US9771508B2 (en) | 2010-02-23 | 2017-09-26 | Laird Technologies, Inc. | Thermal interface materials including thermally reversible gels |
US10087351B2 (en) | 2010-02-23 | 2018-10-02 | Laird Technologies, Inc. | Materials including thermally reversible gels |
JP5936310B2 (en) * | 2011-03-17 | 2016-06-22 | 三菱電機株式会社 | Power semiconductor module and its mounting structure |
CN104053759A (en) * | 2011-10-07 | 2014-09-17 | 3M创新有限公司 | Thermal grease having low thermal resistance |
JP2015504602A (en) | 2011-11-15 | 2015-02-12 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | Electronic devices assembled using thermal insulation layers |
CN103999014B (en) | 2011-11-15 | 2019-03-12 | 汉高知识产权控股有限责任公司 | The electronic equipment assembled using thermal insulation layer |
CN102911596B (en) * | 2012-11-13 | 2015-09-30 | 中国航天科技集团公司第五研究院第五一0研究所 | The preparation method of the bonding thermal control coating of variable emissivity |
US9223363B2 (en) * | 2013-03-16 | 2015-12-29 | Henkel IP & Holding GmbH | Electronic devices assembled with heat absorbing and/or thermally insulating composition |
US20140354314A1 (en) * | 2013-05-31 | 2014-12-04 | Hitesh Arora | Thermal interface techniques and configurations |
US10174433B2 (en) | 2013-12-05 | 2019-01-08 | Honeywell International Inc. | Stannous methanesulfonate solution with adjusted pH |
TWI657132B (en) | 2013-12-19 | 2019-04-21 | 德商漢高智慧財產控股公司 | Compositions having a matrix and encapsulated phase change materials dispersed therein, and electronic devices assembled therewith |
CN106536609B (en) | 2014-07-07 | 2022-04-29 | 霍尼韦尔国际公司 | Thermal interface material with ion scavenger |
US9691746B2 (en) | 2014-07-14 | 2017-06-27 | Micron Technology, Inc. | Methods of manufacturing stacked semiconductor die assemblies with high efficiency thermal paths |
CN107250317A (en) * | 2014-12-05 | 2017-10-13 | 霍尼韦尔国际公司 | High-performance thermal interfacial material with low thermal resistance |
US10312177B2 (en) | 2015-11-17 | 2019-06-04 | Honeywell International Inc. | Thermal interface materials including a coloring agent |
JP6501075B2 (en) | 2016-02-24 | 2019-04-17 | パナソニックIpマネジメント株式会社 | Resin structure and electronic component and electronic device using the structure |
BR112018067991A2 (en) | 2016-03-08 | 2019-01-15 | Honeywell Int Inc | thermal interface material, and electronic component |
US10501671B2 (en) | 2016-07-26 | 2019-12-10 | Honeywell International Inc. | Gel-type thermal interface material |
US11041103B2 (en) * | 2017-09-08 | 2021-06-22 | Honeywell International Inc. | Silicone-free thermal gel |
US10428256B2 (en) | 2017-10-23 | 2019-10-01 | Honeywell International Inc. | Releasable thermal gel |
US11072706B2 (en) | 2018-02-15 | 2021-07-27 | Honeywell International Inc. | Gel-type thermal interface material |
EP3527615A1 (en) * | 2018-02-16 | 2019-08-21 | Venator Germany GmbH | Thermoconductive filler particles and polymer compositions containing them |
JP7069967B2 (en) * | 2018-03-29 | 2022-05-18 | Tdk株式会社 | Heat dissipation board |
CN108441174B (en) * | 2018-04-23 | 2020-12-01 | 辽宁卓仑科技有限公司 | Phase-change heat storage material and preparation method thereof |
US11373921B2 (en) | 2019-04-23 | 2022-06-28 | Honeywell International Inc. | Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing |
ES2960933T3 (en) * | 2019-05-21 | 2024-03-07 | Ddp Specialty Electronic Mat Us Llc | Thermal interface materials |
EP4127040A1 (en) * | 2020-03-26 | 2023-02-08 | DDP Specialty Electronic Materials US, LLC | Thermal interface material comprising multimodally distributed spherical fillers |
CN112409942B (en) * | 2020-11-19 | 2022-05-31 | 杭州福斯特应用材料股份有限公司 | Heat dissipation type packaging adhesive film and preparation method thereof |
CN115725273A (en) * | 2021-08-26 | 2023-03-03 | 华为技术有限公司 | Diamond-based heat-conducting filler, preparation method thereof, composite heat-conducting material and electronic equipment |
CN115214202A (en) * | 2022-04-26 | 2022-10-21 | 北京科技大学 | High-thermal-conductivity layered thermal interface material and preparation method thereof |
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US5781412A (en) * | 1996-11-22 | 1998-07-14 | Parker-Hannifin Corporation | Conductive cooling of a heat-generating electronic component using a cured-in-place, thermally-conductive interlayer having a filler of controlled particle size |
US6791839B2 (en) * | 2002-06-25 | 2004-09-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
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-
2006
- 2006-11-01 EP EP06817447A patent/EP1839469A2/en not_active Withdrawn
- 2006-11-01 US US11/591,215 patent/US20070097651A1/en not_active Abandoned
- 2006-11-01 CN CNA2006800004542A patent/CN101288353A/en active Pending
- 2006-11-01 WO PCT/US2006/042362 patent/WO2007053571A2/en active Application Filing
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US5781412A (en) * | 1996-11-22 | 1998-07-14 | Parker-Hannifin Corporation | Conductive cooling of a heat-generating electronic component using a cured-in-place, thermally-conductive interlayer having a filler of controlled particle size |
US6791839B2 (en) * | 2002-06-25 | 2004-09-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
Also Published As
Publication number | Publication date |
---|---|
EP1839469A2 (en) | 2007-10-03 |
WO2007053571A2 (en) | 2007-05-10 |
CN101288353A (en) | 2008-10-15 |
US20070097651A1 (en) | 2007-05-03 |
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