WO2007036631A1 - Procédé de fabrication d'un élément en couches minces - Google Patents
Procédé de fabrication d'un élément en couches minces Download PDFInfo
- Publication number
- WO2007036631A1 WO2007036631A1 PCT/FR2006/002184 FR2006002184W WO2007036631A1 WO 2007036631 A1 WO2007036631 A1 WO 2007036631A1 FR 2006002184 W FR2006002184 W FR 2006002184W WO 2007036631 A1 WO2007036631 A1 WO 2007036631A1
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- Prior art keywords
- layer
- silicon
- germanium
- support
- thickness
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
Definitions
- the invention relates to a method for manufacturing a thin film element.
- a support is frequently used as the donor structure: part of the donor structure (usually a surface layer) is used as part of the target structure, for example by means of a layer transfer.
- This solution is particularly encountered for the manufacture of a germanium-on-insulator (GeOI) type structure, as described for example in the articles "Germanium-On-Insulator (GeOI) structure realized by the smart eut TM Technology", of F. Letertre et al. in Mat. Res. Soc. Symp. Proc. Flight. 809, 2004 Materials Research Society and "200 mm Gernanium-On-Insulator (GeOI) Structures realized from epitaxial wafers using the smart eut TM technology", by C. Deguet et al., ECS 2005, Quebec, vol. 2005-05, page 78.
- the donor substrate is either a solid germanium substrate (or wafer according to the English term) (sometimes referred to as "Ge BuIK”) or a silicon substrate on which is deposited by epitaxy a germanium layer of which at least a portion will be reported.
- a donor substrate a structure composed of a first material deposited by epitaxy on a second material (for example to take advantage of the electrical properties, or more generally the physical properties, of one and mechanical properties of the other). If these two materials have different mesh parameters, this type of solution leads, however, without particular care to a relatively high dislocation rate in the layer of the first material, which can reduce the electrical and / or physical properties of this layer.
- invention provides a method of manufacturing a thin film element, characterized by the following steps:
- a step of epitaxial growth of a layer of third material on said layer of the first material, the material and the thickness of the third layer are carried out before forming the dielectric layer.
- material being chosen so that the mesh parameter of the third material is determined by that of the crystalline layer of the support.
- the layer of the first material is thus encapsulated, and thus protected, between the layers of the second and third materials. Moreover, the layers are of good quality since the mesh parameter is uniform in this part of the structure.
- the third material is, for example, silicon.
- the following steps may then be carried out subsequent to the step of eliminating the support: local etching of the crystalline layer from the first material to the layer of the third material;
- Areas of the first material and regions of the third material, all of good crystalline quality, are thus obtained on the surface.
- Each region can thus be used for a specific purpose according to its own properties.
- the step of forming the dielectric layer may comprise an at least partial oxidation step of the epitaxial layer of the third material to obtain said dielectric layer.
- This solution is particularly practical and generates an oxide layer of particularly good quality. It also emphasizes the interest of the step of epitaxial growth of the layer of the third material mentioned above.
- the step of forming the dielectric layer of the structure comprises a step of depositing a dielectric layer.
- the dielectric layer is for example an oxide layer.
- the support is a plate of the second material.
- the support is of the superficial-on-insulator layer type whose surface layer forms the crystalline layer of the second material.
- the first material is, for example, germanium. This particular case is interesting because of the physical properties (especially electric transport) of germanium and difficulties in handling it.
- the second material is, for example, solid silicon, the use of which is relatively common and therefore possible handling with conventional means.
- the second material is constrained silicon or SiGe, which has the effect of increasing the critical thickness of germanium.
- the layer of first material finally obtained will generally be of better quality than a layer of first material of the same thickness deposited directly on the support of the second material.
- FIG. 1 to 7 show the main steps of a first example of a method of manufacturing a thin film element according to the teachings of the invention
- FIGS. 8 and 9 represent two steps of a method of manufacturing a thin-film element according to a second exemplary implementation of the invention.
- a crystalline silicon plate 2 is used, as schematically represented in FIG. 1. This is therefore perfectly relaxed silicon.
- a substrate having on the surface a silicon layer for example an SOI (silicon on insulator) substrate.
- SOI silicon on insulator
- Such a structure comprises a solid substrate (generally made of silicon), a buried oxide layer (generally known as "Buried Oxide” BOX). and a surface layer of silicon.
- a silicon substrate having a buried fragile zone obtained for example by implantation of gaseous species (hydrogen, for example), favoring the subsequent elimination of the substrate and its reuse.
- a layer 4 of germanium with a thickness less than the critical thickness is grown by epitaxial growth on this silicon plate 2.
- the critical thickness is the thickness under which the crystalline quality of the epitaxial layer is guaranteed: above this thickness, defects, including dislocations, appear in the epitaxial layer.
- the crystalline structure of the germanium layer 4 (and in particular the mesh parameter) is imposed by the superficial crystalline structure of the plate 2: the mesh parameter of the germanium layer 4 is equal to that of the surface crystalline structure of the silicon plate 2.
- the critical thickness obviously depends on the substrate on which the epitaxy is made. With respect to the critical thickness, reference may be made to the article "Calculation of critical layer heat loss in S / V x Ge x ZSi strained-layer hetero-structures" by J. Huang et al. in J. Appl. Phys. 83 (1), 1998 American Institute of Physics.
- a layer of germanium 4 with a thickness of less than 3 nm is grown.
- the stack shown in FIG. 2 is thus obtained.
- the thickness of the germanium layer 4 is less than the critical thickness and its crystal structure is imposed by that of the plate 2, which is otherwise of good crystalline quality, the dislocation rate in the germanium layer is virtually zero.
- a very thin layer 6 of silicon is then deposited (for example also by epitaxy) with a thickness typically less than 1 nm, typically a few angstroms. The structure shown in FIG. 3 is then obtained.
- a slightly thicker layer of silicon typically between 1 nm and 20 nm, for example between 2 nm and 3 nm
- silicon typically between 1 nm and 20 nm, for example between 2 nm and 3 nm
- oxidize all or part of this layer by surface treatment. chemical or physical. It may for example remain after treatment a few silicon angstroms, preferably 1 or 2 monolayers of silicon. Due to the crystalline quality of the silicon of the plate 2 and the epitaxial germanium, the silicon layer epitaxially grown on the germanium will also have good crystalline quality and the interface between this silicon layer and the germanium layer will be of good quality. , in particular from an electrical point of view.
- the mesh parameter of the germanium in the layer being determined by that of the silicon of the layer, this one will also be taken up in the layer made in silicon and that dislocations will thus be avoided whatever the thickness of the layer. it.
- the germanium layer 4 is encapsulated between the silicon wafer 2 and the thin layer 6, which allows good protection of the germanium layer in the subsequent process steps described now.
- a dielectric for example Si 3 N 4, a high-k material (such as AIN or Hf ⁇ 2), an oxide (such as Al 2 O 3 or SiO 2).
- a high-k material such as AIN or Hf ⁇ 2
- an oxide such as Al 2 O 3 or SiO 2
- it is chosen to deposit SiO 2 , for example by a process of the PECVD type (for "Plasma Enhanced Chemical Vapor Deposition", that is to say plasma-enhanced chemical vapor deposition) here at a temperature of the order of 380 ° C, to obtain a thickness of 10 nm to 300 nm of densified oxide or not.
- the Ge / SiO 2 interface will be of lower electrical quality, but may be sufficient for certain applications.
- the oxide layer 8 thus deposited is intended to form the buried oxide layer (or BOX of the English “Buried Oxide”) of the GeOI structure finally obtained.
- the stack obtained after deposition of the oxide layer 8, shown schematically in FIG. 4, is then transferred to a receiving substrate 10, for example another silicon plate which may or may not be oxidized at the surface.
- a receiving substrate 10 for example another silicon plate which may or may not be oxidized at the surface.
- This transfer takes place here by molecular bonding of the oxide layer 8 on the receiving substrate 10, after activation of the faces to be bonded (for example by chemical activation and / or mechanical and / or chemical polishing - "CMF", and / or or plasma).
- FIG. 5 The structure represented in FIG. 5 is then obtained and which comprises the following stack:
- the thin layer of silicon 6 (optional but advantageous);
- the germanium layer 4 (whose thickness is less than the critical thickness); the silicon wafer 2.
- the removal of the plate 2 is then carried out, for example by a mechanical action (lapping and polishing) and / or chemical etching of the selective silicon with respect to the germanium (for example with TMAH, that is to say tetramethylammonium hydroxide).
- TMAH tetramethylammonium hydroxide
- the advantage of the aforementioned variant using an SOI substrate rather than the massive silicon plate 2 as the starting substrate lies in greater ease of disposal. Indeed, with an SOI substrate, less precautions are taken: the silicon substrate is first removed by mechanical action to reach the buried oxide layer. This can then be removed for example by selective chemical etching with respect to silicon. The thin layer of silicon is then removed, for example by selective chemical etching with respect to germanium.
- germanium layer 4 now superficial. Due to its thickness less than the critical thickness during its growth by epitaxy, the germanium layer 4 will include very few dislocations as already mentioned. The electrical properties of this layer of germanium 4 are therefore in conformity with those expected by the use of germanium, with a equivalent quality to that which would have been obtained by the use of a solid germanium substrate.
- the GeOI structure can thus be used as it is in an electronic component.
- germanium layer 4 of the preceding GeOI structure it is also possible, if it is desired to use a GeOI structure with a germanium layer of greater thickness, to carry out a new growth of germanium by epitaxy on the germanium layer 4 of the preceding GeOI structure.
- the thickness of epitaxial germanium remains below the critical thickness for the new substrate now considered and formed of the Si / SiO 2 / Si stack ( optional) / Ge (constrained).
- a greater thickness may be epitaxially grown.
- the dislocation rate obtained will in any case be lower than the dislocation rate that would have been obtained by directly increasing the total thickness of germanium finally used on a solid silicon plate 2.
- This second example is close to the first example which has just been described and its description will essentially be limited to the steps which distinguish it from the first example.
- a silicon wafer 12 (or alternatively an SOI-type substrate) is also used, on which a germanium layer 14 of thickness less than the critical thickness has been grown by epitaxial growth, as has been the case. described with reference to FIG.
- epitaxially grown on the germanium layer 4 is a layer of silicon with a thickness of the order of a few nanometers, for example 5 nm (and generally less than 10 nm).
- FIG. 9 The structure thus obtained and represented in FIG. 9 is quite comparable to that obtained and represented in FIG. 4 in the first embodiment and can thus be used in an identical manner to the latter.
- germanium layer 14 having a thickness less than the critical thickness as in the first embodiment, the advantages provided herein are identical to those already described.
- this solution makes it possible to obtain a buried oxide (derived from the thermal oxide layer 18) of better quality than when this oxide is obtained by deposition (first embodiment above) and a better interface between this oxide. and the thin layer of silicon (16). It is nevertheless possible, if a thicker oxide layer is desired, to deposit on the thermal oxide layer a complementary layer of oxide.
- germanium as shown in Figure 10 to expose locally the thin layer of silicon 6, 16, then make a recovery of local and selective silicon epitaxy on the thin layer of silicon 6, 16 to obtain a new silicon layer 7 in the region previously etched in the germanium layer 4, as shown in FIG. 11. It will be possible, for example, to provide, after etching of the germanium layer and before the resumption of silicon epitaxy, to protect the islands. of germanium still present by a local layer of protection leaving silicon openings.
- This layer may be selectively removed after silicon epitaxy.
- the embodiments presented above propose to deposit the germanium layer on relaxed silicon (solid Si or SOI), it is also possible to grow the germanium on constrained silicon (obtained for example by epitaxy on of SiGe or from a structure of silicon type constrained on insulator, or sSOI), which has the advantage of increasing the critical thickness of the germanium deposited by epitaxy (that is to say the possible thickness of germanium which can be deposited by epitaxy while preserving the mesh parameter of the crystal structure which receives it, thus minimizing the risks of dislocations).
- constrained silicon obtained for example by epitaxy on of SiGe or from a structure of silicon type constrained on insulator, or sSOI
- This solution also makes it possible to increase the thickness of germanium that can be deposited without degradation of crystalline quality.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2008532822A JP5246659B2 (ja) | 2005-09-28 | 2006-09-25 | 薄膜要素の作製方法 |
US12/088,047 US8664084B2 (en) | 2005-09-28 | 2006-09-25 | Method for making a thin-film element |
CN2006800357741A CN101273438B (zh) | 2005-09-28 | 2006-09-25 | 薄膜元件的制造方法 |
EP06808200.7A EP1938362B1 (fr) | 2005-09-28 | 2006-09-25 | Procede de fabrication d'un element en couches minces |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0509897A FR2891281B1 (fr) | 2005-09-28 | 2005-09-28 | Procede de fabrication d'un element en couches minces. |
FR0509897 | 2005-09-28 |
Publications (1)
Publication Number | Publication Date |
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WO2007036631A1 true WO2007036631A1 (fr) | 2007-04-05 |
Family
ID=36602378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/FR2006/002184 WO2007036631A1 (fr) | 2005-09-28 | 2006-09-25 | Procédé de fabrication d'un élément en couches minces |
Country Status (6)
Country | Link |
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US (1) | US8664084B2 (fr) |
EP (1) | EP1938362B1 (fr) |
JP (1) | JP5246659B2 (fr) |
CN (1) | CN101273438B (fr) |
FR (1) | FR2891281B1 (fr) |
WO (1) | WO2007036631A1 (fr) |
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US8252663B2 (en) | 2009-06-18 | 2012-08-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer |
US8389379B2 (en) | 2002-12-09 | 2013-03-05 | Commissariat A L'energie Atomique | Method for making a stressed structure designed to be dissociated |
US8470712B2 (en) | 1997-12-30 | 2013-06-25 | Commissariat A L'energie Atomique | Process for the transfer of a thin film comprising an inclusion creation step |
US8664084B2 (en) | 2005-09-28 | 2014-03-04 | Commissariat A L'energie Atomique | Method for making a thin-film element |
US8778775B2 (en) | 2006-12-19 | 2014-07-15 | Commissariat A L'energie Atomique | Method for preparing thin GaN layers by implantation and recycling of a starting substrate |
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- 2006-09-25 JP JP2008532822A patent/JP5246659B2/ja active Active
- 2006-09-25 CN CN2006800357741A patent/CN101273438B/zh active Active
- 2006-09-25 WO PCT/FR2006/002184 patent/WO2007036631A1/fr active Search and Examination
- 2006-09-25 EP EP06808200.7A patent/EP1938362B1/fr active Active
- 2006-09-25 US US12/088,047 patent/US8664084B2/en active Active
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8609514B2 (en) | 1997-12-10 | 2013-12-17 | Commissariat A L'energie Atomique | Process for the transfer of a thin film comprising an inclusion creation step |
US8470712B2 (en) | 1997-12-30 | 2013-06-25 | Commissariat A L'energie Atomique | Process for the transfer of a thin film comprising an inclusion creation step |
US8389379B2 (en) | 2002-12-09 | 2013-03-05 | Commissariat A L'energie Atomique | Method for making a stressed structure designed to be dissociated |
US8048766B2 (en) | 2003-06-24 | 2011-11-01 | Commissariat A L'energie Atomique | Integrated circuit on high performance chip |
US8664084B2 (en) | 2005-09-28 | 2014-03-04 | Commissariat A L'energie Atomique | Method for making a thin-film element |
US8778775B2 (en) | 2006-12-19 | 2014-07-15 | Commissariat A L'energie Atomique | Method for preparing thin GaN layers by implantation and recycling of a starting substrate |
US8252663B2 (en) | 2009-06-18 | 2012-08-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer |
Also Published As
Publication number | Publication date |
---|---|
JP5246659B2 (ja) | 2013-07-24 |
JP2009510751A (ja) | 2009-03-12 |
FR2891281B1 (fr) | 2007-12-28 |
EP1938362A1 (fr) | 2008-07-02 |
US20080254591A1 (en) | 2008-10-16 |
CN101273438A (zh) | 2008-09-24 |
EP1938362B1 (fr) | 2013-08-21 |
US8664084B2 (en) | 2014-03-04 |
CN101273438B (zh) | 2011-01-05 |
FR2891281A1 (fr) | 2007-03-30 |
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