WO2007036050B1 - Memory with output control - Google Patents

Memory with output control

Info

Publication number
WO2007036050B1
WO2007036050B1 PCT/CA2006/001609 CA2006001609W WO2007036050B1 WO 2007036050 B1 WO2007036050 B1 WO 2007036050B1 CA 2006001609 W CA2006001609 W CA 2006001609W WO 2007036050 B1 WO2007036050 B1 WO 2007036050B1
Authority
WO
WIPO (PCT)
Prior art keywords
data
memory device
serial
input
output
Prior art date
Application number
PCT/CA2006/001609
Other languages
French (fr)
Other versions
WO2007036050A1 (en
Inventor
Hakjune Oh
Hong Beom Pyeon
Jin-Ki Kim
Original Assignee
Mosaid Technologies Inc
Hakjune Oh
Hong Beom Pyeon
Jin-Ki Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/324,023 external-priority patent/US7652922B2/en
Application filed by Mosaid Technologies Inc, Hakjune Oh, Hong Beom Pyeon, Jin-Ki Kim filed Critical Mosaid Technologies Inc
Priority to KR1020087010560A priority Critical patent/KR101293365B1/en
Priority to KR1020127027496A priority patent/KR101260632B1/en
Priority to EP06790773A priority patent/EP1932158A4/en
Priority to JP2008532552A priority patent/JP5193045B2/en
Publication of WO2007036050A1 publication Critical patent/WO2007036050A1/en
Publication of WO2007036050B1 publication Critical patent/WO2007036050B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G11C7/1021—Page serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled column address stroke pulses each with its associated bit line address
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/12—Synchronisation of different clock signals provided by a plurality of clock generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/107—Serial-parallel conversion of data or prefetch

Abstract

An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, an control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Claims

AMENDED CLAIMS received by the International Bureau on 22 March 2007 (22.03.2007).
1. A semiconductor memory device comprising: memory, a serial data link interface configured to receive serial input data at a serial data input port, and to transfer serial data to a serial data output port; a control input for receiving an output enable signal that is used to enable the memory device to transfer the serial data to the serial data output port; and control circuitry responsive to the output enable signal that controls data transfer on the serial data output port.
2. The semiconductor memory device of claim 1 further comprising a second control input for receiving an input enable signal that is used to enable the memory device to receive the serial input data.
3. The semiconductor memory device of claim 2 further comprising a first control output for outputting a second output enable signal and a second control output for outputting a second input enable signal.
4. The semiconductor memory device of claim 1 further comprising a clock input for receiving a clock signal.
5. The semiconductor memory device of claim 1 , wherein the memory comprises a plurality of memory banks.
6. The semiconductor memory device of claim 1 further comprising a control output for outputting a second output enable signal.
7. The semiconductor memory device of claim 6, wherein the second output enable signal is the first output signal delayed.
AMENDED SHEET (ARTICLE 19)
44
8. The semiconductor memory device of claim 6, wherein the second output enable signal is derived from the first output signal.
9. The semiconductor memory device of claim 1, wherein the serial data link interface is further configured to convert serial input data into parallel data and to transfer the data to the memory.
10. The semiconductor memory device of claim 1 , wherein the serial data link interface is further configured to transfer data from the memory into serial output data,
11. The semiconductor memory device of claim 10, wherein the serial data link interface is further configured to convert serial input data into parallel data and parallel data into serial output data.
12. The semiconductor memory device of claim 1, wherein the control circuitry is configured to receive instructions at the serial data input port to control the transfer of serial output data from the memory.
13. The semiconductor memory device of claim 12 further comprising a unique device identification number.
14. The semiconductor memory device of claim 13, wherein the control circuitry controls access to the memory in response to target device address corresponding to the unique device identification number associated with the device, the target device address being contained in a target device address field of the serial input data.
15. The semiconductor memory device of claim 12, wherein the control circuitry controls the transfer of the data from a location in the memory identified in an address field of the serial input data.
AMENDED SHEET (ARTICLE 19)
45
16. The semiconductor memory device of claim 1, wherein the memory, the serial data link interface and the control circuitry are located within a single package having a one- side pad architecture.
17. The semiconductor memory device of claim 1 , wherein the memory comprises a non-volatile memory bank.
18. The semiconductor memory device of claim 17, wherein the non-volatile memory bank is a flash memory bank.
19. The semiconductor memory device of claim 18, wherein the non- volatile memory bank is a NAND flash memory bank.
20. The semiconductor memory device of claim 1, wherein control circuitry is further responsive to a clock signal to control data transfer on the serial data output port.
21. The semiconductor memory device of claim 1, wherein the control circuitry is further configured to require an output enable signal to remain active until the data transfer on the serial output port is completed.
22. A semiconductor memory device comprising: memory; a serial data link interface configured to receive serial input data at a serial data input port, and to transfer serial data to a serial data output port; a first control input for receiving an output enable signal that is used to enable the memory device to transfer the serial data to the serial data output port; a second control input for receiving an input enable signal that is used to enable the memory device to receive the serial input data; a clock input for receiving a clock signal; and control circuitry responsive to the output enable signal that controls data transfer on the serial data output port and to the input enable signal that enables the device to receive the serial input data.
AMENDED SHEET (ARTICLE 19)
46
23. The semiconductor memory device of claim 22, wherein the first control input, the second control input, the serial data input port, and the serial data output port are configured to be synchronized with the clock signal.
24. The semiconductor memory device of claim 23, wherein the first control input, the second control input, the serial data input port, and the serial data output port are configured to be synchronized at a double data rate with the rising and falling edges of clock signal.
25. The semiconductor memory device of claim 22, wherein the control circuitry is further responsive to the clock signal to enable the device to receive the serial input data.
26. The semiconductor memory device of claim 22, wherein the control circuitry is configured to require an input enable signal to remain active until a target device address and a command instruction is received.
27. The semiconductor memory device of claim 26, wherein the control circuitry is further configured to require an input enable signal to remain active until a row address is received.
28. The semiconductor memory device of claim 26, wherein the control circuitry is further configured to require an input enable signal to remain active until a column address is received.
29. The semiconductor memory device of claim 26, wherein the control circuitry is further configured to require an input enable signal to remain active until a row address instruction, a column address, and data is received.
30. A method of controlling data transfer from a serial link interface in a semiconductor memory device, the method comprising:
AMENDED SHEET (ARTICLE 19) receiving an output enable signal at a control input; enabling the output of serial output data based on the output enable signal; and sending a serial output data stream from the serial data link interface.
31. The method of claim 30, wherein the method further comprises : transferring parallel data between the memory and the serial data link interface; and converting the parallel data into serial output data prior to sending the serial output data stream from the serial data link interface.
32. The method of claim 30, wherein the semiconductor memory device is a flash memory device.
33. The method of claim 30, wherein, the flash memory device is a NAND device.
34. A flash memory system having a plurality of serially connected flash memory devices comprising: a first flash memory device having a serial data input port, a serial data output port, and a control input port, the first flash memory device configured to receive serial input data and an output enable signal from an external source device, and to send serial output data based on the output enable signal; and a second flash memory device having a serial data input port, the second flash memory device configured to receive serial input data from the first flash memory device.
35. The flash memory system of claim 34 wherein: the first flash memory device further includes a control output port, and is configured to send a second output enable signal; and the second flash memory device further includes a serial data output port and a control input port, and is configured to receive the second output enable signal from the control output port of the first device.
AMENDED SHEET (ARTICLE 19)
48
36. The flash memory system of claim 35, wherein the second output enable signal is the first input signal delayed.
37. The flash memory system of claim 35, wherein the second output enable signal is derived from the first output enable signal.
38. The flash memory system of claim 35, wherein the second flash memory device further includes a control output port and is further configured to send serial output data and a third output enable signal to an external target device.
39. The flash memory system of claim 34, wherein the external source device is a controller.
40. The flash memory system of claim 34, wherein the external source device is a flash memory device.
41. The flash memory system of claim 34, wherein: the first flash memory device further includes a second control input port and a second control output port, and is configured to receive an input enable signal from an external source device, and to send a second input enable signal; and the second flash memory device further includes a second control input port, and is configured to receive the second input enable signal from the first flash memory device.
42. The flash memory system of claim 34, wherein a single clock signal is communicated in a cascading signal to each flash memory device of the plurality of serially connected flash memory devices.
43. The flash memory system of claim 34, wherein each of the plurality of flash memory devices further include: a flash memory bank;
AMENDED SHEET (ARTICLE 19)
49 a serial data link interface configured to receive serial input data at a serial data input port and transfer the serial input data to the memory bank, and to transfer serial output data to a serial data output port; and control circuitry that controls data transfer between the serial data link interface and the flash memory bank, and between the serial data link interface and the serial data output port.
44. The flash memory system of claim 43, wherein the flash memory bank is a NAND flash memory.
AMENDED SHEET (ARTICLE 19)
50
PCT/CA2006/001609 2005-09-30 2006-09-29 Memory with output control WO2007036050A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020087010560A KR101293365B1 (en) 2005-09-30 2006-09-29 Memory with output control
KR1020127027496A KR101260632B1 (en) 2005-09-30 2006-09-29 Memory with output control
EP06790773A EP1932158A4 (en) 2005-09-30 2006-09-29 Memory with output control
JP2008532552A JP5193045B2 (en) 2005-09-30 2006-09-29 Memory with output controller

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US72236805P 2005-09-30 2005-09-30
US60/722,368 2005-09-30
US11/324,023 2005-12-30
US11/324,023 US7652922B2 (en) 2005-09-30 2005-12-30 Multiple independent serial link memory
US84779006P 2006-09-27 2006-09-27
US60/847,790 2006-09-27

Publications (2)

Publication Number Publication Date
WO2007036050A1 WO2007036050A1 (en) 2007-04-05
WO2007036050B1 true WO2007036050B1 (en) 2007-05-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2006/001609 WO2007036050A1 (en) 2005-09-30 2006-09-29 Memory with output control

Country Status (6)

Country Link
US (14) US7515471B2 (en)
EP (1) EP1932158A4 (en)
JP (1) JP5193045B2 (en)
KR (2) KR101260632B1 (en)
TW (2) TWI446356B (en)
WO (1) WO2007036050A1 (en)

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