WO2007035178A3 - Enhanced electron field emission from carbon nanotubes without activation - Google Patents

Enhanced electron field emission from carbon nanotubes without activation Download PDF

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Publication number
WO2007035178A3
WO2007035178A3 PCT/US2005/031775 US2005031775W WO2007035178A3 WO 2007035178 A3 WO2007035178 A3 WO 2007035178A3 US 2005031775 W US2005031775 W US 2005031775W WO 2007035178 A3 WO2007035178 A3 WO 2007035178A3
Authority
WO
WIPO (PCT)
Prior art keywords
field emission
carbon nanotubes
activation
cnt
electron field
Prior art date
Application number
PCT/US2005/031775
Other languages
French (fr)
Other versions
WO2007035178A2 (en
Inventor
Dongsheng Mao
Richard L Fink
Zvi Yaniv
Original Assignee
Nano Proprietary Inc
Dongsheng Mao
Richard L Fink
Zvi Yaniv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nano Proprietary Inc, Dongsheng Mao, Richard L Fink, Zvi Yaniv filed Critical Nano Proprietary Inc
Priority to CN2005800302566A priority Critical patent/CN101432838B/en
Priority to JP2007536693A priority patent/JP5090917B2/en
Priority to KR1020077004886A priority patent/KR101092540B1/en
Publication of WO2007035178A2 publication Critical patent/WO2007035178A2/en
Publication of WO2007035178A3 publication Critical patent/WO2007035178A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Abstract

A method for forming cathodes for use in field emission devices using nanoparticules, such as carbon nanotubes (CNTs), is disclosed. The CNT layer comprises the electron emitting material on the surface of the cathode. Using the methods of the present invention, the density of the deposited CNTs may be modulated by forming emitter islands on the surface of the cathode. The size and distribution of the CNT emitter islands serve to optimize the field emission of the resulting CNT layer. In one embodiment, the CNT emitter islands are formed using a screen-printing deposition method. The present invention may be practiced without further process steps after deposition which activate or align active or align the carbon nanotubes for field emission.
PCT/US2005/031775 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation WO2007035178A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2005800302566A CN101432838B (en) 2004-09-10 2005-09-08 Field emission cathode device, display device and manufacturing method
JP2007536693A JP5090917B2 (en) 2004-09-10 2005-09-08 Enhancement of field emission by non-activated carbon nanotubes
KR1020077004886A KR101092540B1 (en) 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US60912804P 2004-09-10 2004-09-10
US60/609,128 2004-09-10
US11/215,696 2005-08-30
US11/215,696 US7736209B2 (en) 2004-09-10 2005-08-30 Enhanced electron field emission from carbon nanotubes without activation

Publications (2)

Publication Number Publication Date
WO2007035178A2 WO2007035178A2 (en) 2007-03-29
WO2007035178A3 true WO2007035178A3 (en) 2009-06-18

Family

ID=37889280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/031775 WO2007035178A2 (en) 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation

Country Status (6)

Country Link
US (1) US7736209B2 (en)
JP (1) JP5090917B2 (en)
KR (1) KR101092540B1 (en)
CN (1) CN101432838B (en)
TW (1) TWI378155B (en)
WO (1) WO2007035178A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7777928B2 (en) * 2005-02-28 2010-08-17 Chad Byron Moore Electrode enhancements for fiber-based displays
US9743142B2 (en) * 2008-02-19 2017-08-22 Time Warner Cable Enterprises Llc Multi-stream premises apparatus and methods for use in a content delivery network
JP5476751B2 (en) * 2009-03-13 2014-04-23 独立行政法人物質・材料研究機構 Nanocarbon emitter, manufacturing method thereof, and surface light emitting device using the same
KR101302335B1 (en) * 2009-09-23 2013-08-30 (주)엘지하우시스 Flooring material and preparation method thereof
KR101283578B1 (en) * 2009-12-11 2013-07-08 한국전자통신연구원 Plastic Substrates and Methods of Fabricating the Same
JP6397656B2 (en) * 2013-05-24 2018-09-26 韓國電子通信研究院Ｅｌｅｃｔｒｏｎｉｃｓ ａｎｄ Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ Single power multi-pole field emission device and driving method thereof
US20140363643A1 (en) * 2013-06-07 2014-12-11 International Business Machines Corporation Surface-Selective Carbon Nanotube Deposition Via Polymer-Mediated Assembly
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067937A1 (en) * 2003-09-25 2005-03-31 Industrial Technology Research Institute Carbon nanotube field emitter array and method for fabricating the same

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930009170B1 (en) * 1991-10-24 1993-09-23 삼성전관 주식회사 Method of making a dispenser-type cathode
JP2985467B2 (en) * 1992-01-22 1999-11-29 三菱電機株式会社 Method for producing impregnated cathode
DE4405768A1 (en) * 1994-02-23 1995-08-24 Till Keesmann Field emission cathode device and method for its manufacture
FR2726688B1 (en) * 1994-11-08 1996-12-06 Commissariat Energie Atomique FIELD-EFFECT ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF, APPLICATION TO CATHODOLUMINESCENCE VISUALIZATION DEVICES
TW320732B (en) * 1995-04-20 1997-11-21 Matsushita Electron Co Ltd
US6296740B1 (en) * 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
JP3624992B2 (en) * 1996-04-22 2005-03-02 富士通株式会社 Method for forming partition wall of display panel
US5830527A (en) * 1996-05-29 1998-11-03 Texas Instruments Incorporated Flat panel display anode structure and method of making
US5726524A (en) * 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
JP2000516708A (en) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ Macroscopically operable nanoscale devices fabricated from nanotube assemblies
US6057637A (en) * 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6310432B1 (en) * 1997-05-21 2001-10-30 Si Diamond Technology, Inc. Surface treatment process used in growing a carbon film
DE69834673T2 (en) 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Method for producing an electron-emitting source
JP3790047B2 (en) 1998-07-17 2006-06-28 株式会社ノリタケカンパニーリミテド Manufacturing method of electron emission source
US6409567B1 (en) * 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
EP1047097A4 (en) * 1998-06-18 2006-08-09 Matsushita Electric Ind Co Ltd Electron emitting device, electron emitting source, image display, and method for producing them
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6441550B1 (en) * 1998-10-12 2002-08-27 Extreme Devices Inc. Carbon-based field emission electron device for high current density applications
JP4109809B2 (en) * 1998-11-10 2008-07-02 キヤノン株式会社 Method for producing fine wire containing titanium oxide
JP4069532B2 (en) * 1999-01-11 2008-04-02 松下電器産業株式会社 Carbon ink, electron-emitting device, method for manufacturing electron-emitting device, and image display device
JP3943272B2 (en) * 1999-01-18 2007-07-11 双葉電子工業株式会社 Film forming method of carbon nanotube
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
JP2000260298A (en) 1999-03-05 2000-09-22 Sony Corp Cold cathode field electron emission element, its manufacture and cold cathode field electron emission display device
US6538367B1 (en) * 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
AUPQ930800A0 (en) * 2000-08-10 2000-08-31 Megara (Australia) Pty Ltd Finishing of metal surfaces and related applications
US6553096B1 (en) * 2000-10-06 2003-04-22 The University Of North Carolina Chapel Hill X-ray generating mechanism using electron field emission cathode
EP1221710B1 (en) * 2001-01-05 2004-10-27 Samsung SDI Co. Ltd. Method of manufacturing triode carbon nanotube field emitter array
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
JP2003166040A (en) 2001-02-08 2003-06-13 Hitachi Maxell Ltd Fine particles of metal alloy and manufacturing method therefor
JP2002343280A (en) * 2001-05-16 2002-11-29 Hitachi Ltd Display unit and method of manufacturing the same
WO2002103737A2 (en) * 2001-06-14 2002-12-27 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US6890230B2 (en) * 2001-08-28 2005-05-10 Motorola, Inc. Method for activating nanotubes as field emission sources
US20060252163A1 (en) * 2001-10-19 2006-11-09 Nano-Proprietary, Inc. Peelable photoresist for carbon nanotube cathode
US7195938B2 (en) * 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes
US6813828B2 (en) * 2002-01-07 2004-11-09 Gel Pak L.L.C. Method for deconstructing an integrated circuit package using lapping
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
US20040109813A1 (en) * 2002-12-05 2004-06-10 National Tsing Hua University Process and device for upgrading current emission
JP2005005079A (en) 2003-06-11 2005-01-06 Hitachi Displays Ltd Self-luminous flat display device and its manufacturing method
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067937A1 (en) * 2003-09-25 2005-03-31 Industrial Technology Research Institute Carbon nanotube field emitter array and method for fabricating the same

Also Published As

Publication number Publication date
JP2008512849A (en) 2008-04-24
WO2007035178A2 (en) 2007-03-29
TW200622031A (en) 2006-07-01
JP5090917B2 (en) 2012-12-05
CN101432838B (en) 2012-11-14
US7736209B2 (en) 2010-06-15
KR101092540B1 (en) 2011-12-14
CN101432838A (en) 2009-05-13
TWI378155B (en) 2012-12-01
KR20080009258A (en) 2008-01-28
US20070278925A1 (en) 2007-12-06

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