WO2007035178A2 - Enhanced electron field emission from carbon nanotubes without activation - Google Patents

Enhanced electron field emission from carbon nanotubes without activation Download PDF

Info

Publication number
WO2007035178A2
WO2007035178A2 PCT/US2005/031775 US2005031775W WO2007035178A2 WO 2007035178 A2 WO2007035178 A2 WO 2007035178A2 US 2005031775 W US2005031775 W US 2005031775W WO 2007035178 A2 WO2007035178 A2 WO 2007035178A2
Authority
WO
WIPO (PCT)
Prior art keywords
particles
carbon nanotubes
nanoparticle
field emission
group
Prior art date
Application number
PCT/US2005/031775
Other languages
French (fr)
Other versions
WO2007035178A3 (en
Inventor
Dongsheng Mao
Richard L. Fink
Zvi Yaniv
Original Assignee
Nano-Proprietary, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nano-Proprietary, Inc. filed Critical Nano-Proprietary, Inc.
Priority to JP2007536693A priority Critical patent/JP5090917B2/en
Priority to CN2005800302566A priority patent/CN101432838B/en
Priority to KR1020077004886A priority patent/KR101092540B1/en
Publication of WO2007035178A2 publication Critical patent/WO2007035178A2/en
Publication of WO2007035178A3 publication Critical patent/WO2007035178A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30403Field emission cathodes characterised by the emitter shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)

Definitions

  • the present invention relates in general to field emission, and in particular to field emission using carbon nanotube cathodes.
  • Carbon nanotubes are excellent cold cathode materials for field emission applications such as flat panel displays, microwave sources, x-ray tubes, etc. for very stable and low voltage operation with long lifetime because of their high aspect ratio, electrical conductivity, and outstanding chemical inertness (Zvi Yaniv, "The status of the carbon electron emitting films for display and microelectronic applications," The International Display Manufacturing Conference, January 29-31, 2002, Seoul, Korea).
  • CNTs can be grown on catalyst-supported substrates by arc discharge, laser ablation and other techniques at high temperatures up to 1200-1300 0 C. Aligned CNTs, deposited by chemical vapor deposition (CVD), may have good field emission properties because they have higher geometric field enhancement.
  • CVD chemical vapor deposition
  • CVD process is not necessarily suited for depositing CNTs over large areas because it is very difficult to achieve high uniformity of process conditions across large substrate areas as required for display applications.
  • CVD growth of CNTs also requires a high process temperature (over 500 0 C), eliminating the use of low-cost substrates such as soda-lime glass.
  • CNTs can be printed through a mesh screen if they are mixed with a binder, epoxy, etc. (D. S. Chung, W. B. Choi, J. Hi Kang et al., "Field emission from 4.5 in. single-walled and multi-walled carbon nanotube films," J. Vac. Sci. Technol. B18(2), 1054-1058 (2000)). They can be sprayed onto the substrates if mixed with a solvent such as IPA, acetone, or water (D. S. Mao, R. L. Fink, G.
  • IPA IPA
  • acetone acetone
  • Another activation process involves using an optimized soft rubber roller to remove the contaminants covering the CNTs (Yong C. Kim, K. H. Sohn, Y. Mo. Cho, and Eun H. Yoo, "Vertical alignment of printed carbon nanotubes by multiple field emission cycles," Appl. Phys. Lett 84, 5350-5352 (2004)). During that process, a portion of the CNT was also removed, and the field emission properties of the CNTs were improved. Alignment of CNTs after the rubbing process was not observed, but alignment was observed after an electric field was applied to the CNT coating. This indicates that the alignment of the CNTs on the cathode is not a required material property for improved field emission characteristics.
  • the present invention addresses the foregoing need by providing a method that results in a CNT cathode with improved field emission characteristics without requiring an activation process step.
  • the CNT material is deposited on the cathode electrode surface as a layer of distinct emitter islands which are physically separated from each other. Optimization of the electron field emission performance is realized by modulating the density of the field emitter islands.
  • a method of the present invention requires neither mixing of the CNT material with other particles nor physical alignment of the CNTs to obtain enhanced field emission properties.
  • Merits of the present invention over the prior art for depositing CNT material for field emission cathodes include an optimization of the amount of CNTs required and an overall simpler process as compared to deposition with subsequent activation and material removal.
  • a low-temperature deposition process such as screen-printing, the present invention provides a method that is cost-effective for industrial scale operations.
  • FIGURE 1 shows an optical image of a mesh screen
  • FIGURE 2 shows an optical microscope image of the CNT coating on the substrate
  • FIGURE 3 shows an optical image of a sample after a firing process
  • FIGURE 4 shows an optical microscope image of a sample printed 5 times
  • FIGURE 5 illustrates field emission current vs. electric field data of several samples
  • FIGURE 6 shows a field emission image of a sample printed twice at an emission current of 30 mA
  • FIGURES 6A-6F illustrate a screen-printing process in an embodiment of the present invention
  • FIGURE 7 illustrates field emission current vs. electric field data of samples of the present invention
  • FIGURE 8 illustrates a schematic diagram of the structure of the substrate
  • FIGURE 9 shows a field emission image sample of an embodiment of the present invention.
  • FIGURE 10 illustrates a data processing system
  • FIGURE 11 illustrates a portion of a field emission display made using a cathode in a diode configuration.
  • the present invention provides substantially enhanced field emission properties by patterning CNT islands that are separated from each other.
  • the method and devices of the present invention do not require an activation process to facilitate field emission of the CNT cathode material.
  • the present invention thus incorporates a very easy and low cost process, which can be performed over a very large area with very good uniformity.
  • Unpurified (from Iljin Nanotech, Inc., Korea) and purified (from Carbon Nanotechnologies, Inc., Houston, Texas) single- wall carbon nanotubes (SWNTs) used in one example of the present invention were 1-2 nm in diameter and 5-20 ⁇ m in length. Both purified and unpurified single-wall, double-wall or multi-wall carbon nanotubes, carbon fibers or other kinds of nanotubes and nanowires from other sources can also be used with similar results.
  • the CNT material may also be comprised of chemically modified CNTs, functionalized CNTs, or CNTs derivatized by various methods.
  • the CNT material may also comprise various other forms of nanoparticles, including buckytubes, carbon fibrils, metallic carbon nanotubes, semiconducting carbon nanotubes.
  • the nanoparticle material may comprise spherical particles, dish-shaped particles, lamellar particles, rod-like particles, metal particles, semiconductor particles, polymeric particles, ceramic particles, dielectric particles, clay particles, and fibers.
  • various combinations in composition and form of aforementioned nanoparticles may also be used to practice the current invention.
  • the CNT islands were formed using a screen-printing process.
  • the paste containing CNTs was made by a grinding process.
  • the CNT paste was made by mixing 1.3 g CNT powder with 8 g vehicle (organic solvent, made by Daejoo Fine Chemical Co., Korea), 0.7 g low melting point (430°C) glass frit (binder, made by Daejoo Fine Chemical Co., Korea), and thinner (organic solvent, Dupont) to further adjust the viscosity of the paste.
  • a 3 roll mill (Netzsch Inc.) was used to grind the paste at least 20 times to disperse the CNTs in the paste.
  • the final viscosity of the paste was about 130,000 CP.
  • the CNT paste was then deposited by a screen-printing process.
  • a 355-mesh screen was used to print the CNT paste with a controlled thickness onto the substrate.
  • FIGURE 1 shows the optical microscope image of the mesh screen.
  • the screen was formed with patterned polyester lines with 10 micron emulsion on them to control the thickness of the CNT paste.
  • the width of the polyester lines is about 42 microns.
  • the size of the opening where the CNT paste will pass through to the substrate is 28 micron x 28 micron. It can be seen that some CNT materials were left in the openings after the printing process.
  • various comparable size mesh screens may also be used to practice the invention.
  • processes other than the screen-printing process such as spraying, brushing, ink-jet printing, electrophoresis deposition, and dispersing may also be utilized.
  • FIGURE 2 shows an optical microscope image of the CNT coating after baking. CNT islands can clearly be seen in the image.
  • the sample was then fired in a vacuum oven. In one firing process, the temperature was increased with a rate of 180°C per hour. The temperature was then maintained at 315°C for 10 min. to evaporate the organic material in the CNT coating mixture. Then, the oven was flooded with N2 gas to prevent the CNTs from becoming graphitized, while the temperature was further increased to 450°C for 10 min.
  • FIGURE 3 shows the optical microscope image of the sample after the firing process. In this example, the thickness of these CNT islands was around 2-4 microns.
  • FIGURE 4 shows an optical microscope image of a sample printed 5 times. Clearly visible in FIGURE 4 are some ⁇ CNT clusters that have connected with each other.
  • the sample printed twice exhibited the best field emission properties, i.e., emission at lowest electric field strength.
  • a field emission image of the sample printed twice is shown in FIGURE 6, which shows very good uniformity and high emission site density.
  • the electric field at an emission current of 30 niA was 7.82, 6.34, 6.44, and 7.2 V/micron respectively.
  • the data indicate that an optimal CNT island density corresponded to printing the CNT paste twice in this example. For the samples that were printed 3 and more times, the field emission properties degraded with increasing density of the CNT islands.
  • the printing process may be modified to produce an optimal CNT island size and density, corresponding to the best field emission results, with a single printing operation.
  • FIGURE 7 shows the field emission current vs. electric field curves of the samples before and after taping. The data indicate that there is little difference in the field emission properties between the taped and untaped samples.
  • CNT paste was printed on a larger area with a patterned structure, as opposed to the previous samples which were formed on a blanket layer of ITO deposited on a glass substrate.
  • a triode structure may be used in order to lower the extraction voltage and substantially lower the cost.
  • a purified SWNT form of CNTs (Carbon Nanotechnologies, Inc.) was used. Referring to FIGURE 8, CNT paste 103 was printed onto the surface of a patterned structure 101, 106, 107. First, 6 micron-thick silver paste electrodes 106 were screen-printed on a glass substrate 101.
  • a 50 micron-thick insulating overcoat 107 was printed, thus leaving small openings in the silver electrode 106 on the surface.
  • the size of the openings was 300 microns x 800 microns in one case, while the number of the openings was 160 x 480 pixels.
  • the total cathode active area was 10 inch by 10 inch.
  • FIGURE 6A which illustrates a cross-sectional diagram of the screen printing apparatus
  • a stage (or chuck) 613 receives the substrate 614 to be printed with the paste (or ink) 611.
  • the paste 611 is deposited on one side of the printing surface 610 of an image mesh screen 616.
  • a squeegee 612 is the means for evenly applying the paste 611 over the openings 605 in the mesh screen 616.
  • the stage 613 along with the substrate 614 is aligned to the screen, such that a desired snap off distance between the screen 616 and the substrate 614 is achieved.
  • the alignment is made via manipulation of the stage 613 and substrate 614 in the x,y,z directions 615, whereby additional angular corrections or alignments may also be performed.
  • FIGURE 6C the movement of the squeegee 612 across the surface 610 of the mesh screen 616 in the direction 620 is performed, which effectively distributes the paste 611 evenly over the screen surface 610.
  • the paste 611 is forced through the mesh openings 605 by the force of the squeegee 612.
  • FIGURE 6D the stage 613 and substrate 614, now printed with the paste 611, is lowered 625 away from the mesh screen 616.
  • FIGURE 6E illustrates the resulting stage 613 and substrate 614 printed with paste 611.
  • FIGURE 6F the stage 613 is removed, leaving the desired product, substrate 614 printed with paste 611 according to the pattern of the mesh screen 616.
  • FIGURE 9 shows a field emission image of a sample obtained by testing in a diode mode at an emission current of 120 mA. The image shows that the field emission was uniform over the large area. The dark area on the edges was a result of a warped anode screen, which created a non-uniform gap between the cathode and the anode.
  • FIGURE 10 A representative hardware environment for practicing the present invention is depicted in FIGURE 10, which illustrates an exemplary hardware configuration of data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510, such as a conventional microprocessor, and a number of other units interconnected via system bus 512.
  • CPU central processing unit
  • FIGURE 10 illustrates an exemplary hardware configuration of data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510, such as a conventional microprocessor, and a number of other units interconnected via system bus 512.
  • CPU central processing unit
  • Data processing system 513 includes random access memory (RAM) 514, read only memory (ROM) 516, and input/output (I/O) adapter 518 for connecting peripheral devices such as disk units 520 and tape drives 540 to bus 512, user interface adapter 522 for connecting keyboard 524, mouse 526, and/or other user interface devices such as a touch screen device (not shown) to bus 512, communication adapter 534 for connecting data processing system 513 to a data processing network, and display adapter 536 for connecting bus 512 to display device 538.
  • CPU 510 may include other circuitry not shown herein, which will include circuitry commonly found within a microprocessor, e.g., execution unit, bus interface unit, arithmetic logic unit, etc.
  • Display device 538 represents possible embodiments of the present invention.
  • FIGURE 11 illustrates a portion of a field emission display 538 made using a cathode in a diode configuration, such as created above. Included with the cathode is a conductive layer 106 and the CNT emitter 103.
  • the anode may be comprised of a glass substrate 612, and indium tin layer 613, and a cathodoluminescent layer 614.
  • An electrical field is set up between the anode and the cathode.
  • Such a display 538 could be utilized within a data processing system 513, such as illustrated with respect to FIGURE 10.

Abstract

A method for forming cathodes for use in field emission devices using nanoparticules, such as carbon nanotubes (CNTs), is disclosed. The CNT layer comprises the electron emitting material on the surface of the cathode. Using the methods of the present invention, the density of the deposited CNTs may be modulated by forming emitter islands on the surface of the cathode. The size and distribution of the CNT emitter islands serve to optimize the field emission of the resulting CNT layer. In one embodiment, the CNT emitter islands are formed using a screen-printing deposition method. The present invention may be practiced without further process steps after deposition which activate or align active or align the carbon nanotubes for field emission.

Description

ENHANCED ELECTRON FIELD EMISSION FROM CARBON NANOTUBES
WITHOUT ACTIVATION
The present invention claims priority under 35 U.S.C. §119(e) to U.S. Provisional Patent Application Serial No. 60/609,128.
TECHNICAL FIELD
The present invention relates in general to field emission, and in particular to field emission using carbon nanotube cathodes.
BACKGROUND INFORMATION
Carbon nanotubes (CNTs) are excellent cold cathode materials for field emission applications such as flat panel displays, microwave sources, x-ray tubes, etc. for very stable and low voltage operation with long lifetime because of their high aspect ratio, electrical conductivity, and outstanding chemical inertness (Zvi Yaniv, "The status of the carbon electron emitting films for display and microelectronic applications," The International Display Manufacturing Conference, January 29-31, 2002, Seoul, Korea). CNTs can be grown on catalyst-supported substrates by arc discharge, laser ablation and other techniques at high temperatures up to 1200-13000C. Aligned CNTs, deposited by chemical vapor deposition (CVD), may have good field emission properties because they have higher geometric field enhancement. But the CVD process is not necessarily suited for depositing CNTs over large areas because it is very difficult to achieve high uniformity of process conditions across large substrate areas as required for display applications. CVD growth of CNTs also requires a high process temperature (over 5000C), eliminating the use of low-cost substrates such as soda-lime glass.
A simpler process is to collect the CNT powders and deposit them uniformly onto a selective area of the substrate. CNTs can be printed through a mesh screen if they are mixed with a binder, epoxy, etc. (D. S. Chung, W. B. Choi, J. Hi Kang et al., "Field emission from 4.5 in. single-walled and multi-walled carbon nanotube films," J. Vac. Sci. Technol. B18(2), 1054-1058 (2000)). They can be sprayed onto the substrates if mixed with a solvent such as IPA, acetone, or water (D. S. Mao, R. L. Fink, G. Monty et al., "New CNT composites for FEDs that do not require activation," Proceedings of the Ninth International Display Workshops, Hiroshima, Japan, p. 1415, December 4-6, 2002). Special surface treatments, so called "activation" processes, are then often needed to achieve low electric field emission and high emission site density of the CNT cathodes. A taping process can enhance the field emission properties of the carbon nanotubes (Yu- Yang Chang, Jyh-Rong Sheu, Cheng-Chung Lee, "Method of improving field emission efficiency for fabricating carbon nanotube field emitters," U.S. Patent No. 6,436,221). In this method, an adhesive tape is closely attached on the CNT cathode surface and then it is removed. As a result of taping, some carbon nanotubes will be vertically oriented, and the poorly bonded CNT portions will be removed. Possibly some adhesive residue will remain behind on the top of the carbon nanotube layer. The organic residue on the cathode surface after the taping activation process may emit residual, undesirable gases in the sealed glass display envelope during field emission operation. Also, uniformly activating the substrate over a large area remains difficult. For example, many display applications may require 40 inch - 100 inch diagonal plates.
Although a portion of the CNTs may vertically align after the taping process, which has been considered a key factor in improving the field emission properties of the CNT cathodes, in fact some CNT material is removed by the adhesive layer of the tape. Researchers have found that the field emission properties of the CNTs are diminished if the CNTs are very dense (Jean-Marc Bonard, Nicolas Weiss, Hannes Kind et al., "Tuning the field emission properties of patterned carbon nanotube films," Advanced Materials 13, 184- 188 (2001). An electric field shielding effect occurs when the CNTs are very close to each other, preventing CNTs from emitting electrons. Enhanced field emission properties of CNTs mixed with particles have been obtained because the CNTs were separated with each other by the particles (Dongsheng Mao, Richard Lee Fink, Zvi Yaniv, "Enhanced field emission from carbon nanotubes mixed with particles," U.S. Patent No. 6,798,127). In that patent, researchers obtained good field emission results without an activation process, such as taping, after the deposition of the CNT mixture. In earlier studies using carbon film as a cold cathode, a patterned carbon film was observed having much better field emission properties than a continuous carbon film (Zhidan Li ToIt, Zvi Yaniv, Richard Lee Fink, "Surface treatment process used in growing a carbon film," U.S. Patent No. 6,630,023). Another activation process involves using an optimized soft rubber roller to remove the contaminants covering the CNTs (Yong C. Kim, K. H. Sohn, Y. Mo. Cho, and Eun H. Yoo, "Vertical alignment of printed carbon nanotubes by multiple field emission cycles," Appl. Phys. Lett 84, 5350-5352 (2004)). During that process, a portion of the CNT was also removed, and the field emission properties of the CNTs were improved. Alignment of CNTs after the rubbing process was not observed, but alignment was observed after an electric field was applied to the CNT coating. This indicates that the alignment of the CNTs on the cathode is not a required material property for improved field emission characteristics.
In view of these findings in the related art, there is a need for a low-temperature method to produce a CNT cathode layer such that the CNTs are not too densely deposited on the surface, thereby inhibiting electron emission. With an optimized spatial distribution of the CNT material, the post-deposition activation process may be eliminated, thereby saving significant cost and effort in the manufacture of the resulting field emission display apparatus.
SUMMARY OF THE INVENTION
The present invention addresses the foregoing need by providing a method that results in a CNT cathode with improved field emission characteristics without requiring an activation process step. The CNT material is deposited on the cathode electrode surface as a layer of distinct emitter islands which are physically separated from each other. Optimization of the electron field emission performance is realized by modulating the density of the field emitter islands. A method of the present invention requires neither mixing of the CNT material with other particles nor physical alignment of the CNTs to obtain enhanced field emission properties.
Merits of the present invention over the prior art for depositing CNT material for field emission cathodes include an optimization of the amount of CNTs required and an overall simpler process as compared to deposition with subsequent activation and material removal. Using a low-temperature deposition process, such as screen-printing, the present invention provides a method that is cost-effective for industrial scale operations.
The foregoing has outlined rather broadly the features and technical advantages of the present invention in order that the detailed description of the invention that follows may be better understood. Additional features and advantages of the invention will be described hereinafter which form the subject of the claims of the invention. BRIEF DESCRIPTION OF THE DRAWINGS
For a more complete understanding of the present invention, the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
FIGURE 1 shows an optical image of a mesh screen;
FIGURE 2 shows an optical microscope image of the CNT coating on the substrate;
FIGURE 3 shows an optical image of a sample after a firing process;
FIGURE 4 shows an optical microscope image of a sample printed 5 times;
FIGURE 5 illustrates field emission current vs. electric field data of several samples;
FIGURE 6 shows a field emission image of a sample printed twice at an emission current of 30 mA;
FIGURES 6A-6F illustrate a screen-printing process in an embodiment of the present invention;
FIGURE 7 illustrates field emission current vs. electric field data of samples of the present invention;
FIGURE 8 illustrates a schematic diagram of the structure of the substrate;
FIGURE 9 shows a field emission image sample of an embodiment of the present invention;
FIGURE 10 illustrates a data processing system; and
FIGURE 11 illustrates a portion of a field emission display made using a cathode in a diode configuration.
DETAILED DESCRIPTION hi the following description, numerous specific details are set forth such as specific substrate materials to provide a thorough understanding of the present invention. However, it will be obvious to those skilled in the art that the present invention may be practiced without such specific details. In other instances, well known circuits have been shown in block diagram form in order not to obscure the present invention in unnecessary detail. For the most part, details concerning timing considerations and the like have been omitted inasmuch as such details are not necessary to obtain a complete understanding of the present invention and are within the skills of persons of ordinary skill in the relevant art.
Refer now to the drawings wherein depicted elements are not necessarily shown to scale and wherein like or similar elements are designated by the same reference numeral through the several views.
The present invention provides substantially enhanced field emission properties by patterning CNT islands that are separated from each other. The method and devices of the present invention do not require an activation process to facilitate field emission of the CNT cathode material. The present invention thus incorporates a very easy and low cost process, which can be performed over a very large area with very good uniformity.
Unpurified (from Iljin Nanotech, Inc., Korea) and purified (from Carbon Nanotechnologies, Inc., Houston, Texas) single- wall carbon nanotubes (SWNTs) used in one example of the present invention were 1-2 nm in diameter and 5-20 μm in length. Both purified and unpurified single-wall, double-wall or multi-wall carbon nanotubes, carbon fibers or other kinds of nanotubes and nanowires from other sources can also be used with similar results. The CNT material may also be comprised of chemically modified CNTs, functionalized CNTs, or CNTs derivatized by various methods. The CNT material may also comprise various other forms of nanoparticles, including buckytubes, carbon fibrils, metallic carbon nanotubes, semiconducting carbon nanotubes. In some cases, the nanoparticle material may comprise spherical particles, dish-shaped particles, lamellar particles, rod-like particles, metal particles, semiconductor particles, polymeric particles, ceramic particles, dielectric particles, clay particles, and fibers. In other example methods, various combinations in composition and form of aforementioned nanoparticles may also be used to practice the current invention.
In an illustrative example of the present invention, the CNT islands were formed using a screen-printing process. In one method, the paste containing CNTs was made by a grinding process. The CNT paste was made by mixing 1.3 g CNT powder with 8 g vehicle (organic solvent, made by Daejoo Fine Chemical Co., Korea), 0.7 g low melting point (430°C) glass frit (binder, made by Daejoo Fine Chemical Co., Korea), and thinner (organic solvent, Dupont) to further adjust the viscosity of the paste. A 3 roll mill (Netzsch Inc.) was used to grind the paste at least 20 times to disperse the CNTs in the paste. In one mixture, the final viscosity of the paste was about 130,000 CP. The CNT paste was then deposited by a screen-printing process. A 355-mesh screen was used to print the CNT paste with a controlled thickness onto the substrate. FIGURE 1 shows the optical microscope image of the mesh screen. The screen was formed with patterned polyester lines with 10 micron emulsion on them to control the thickness of the CNT paste. The width of the polyester lines is about 42 microns. The size of the opening where the CNT paste will pass through to the substrate is 28 micron x 28 micron. It can be seen that some CNT materials were left in the openings after the printing process. In other cases, various comparable size mesh screens may also be used to practice the invention. In other examples of the present invention, processes other than the screen-printing process such as spraying, brushing, ink-jet printing, electrophoresis deposition, and dispersing may also be utilized.
A manual squeegee was used to print the CNT paste on the ITO/glass surface over an area of 3 cm x 3 cm. The sample was then baked at 100°C for 10 min. in an oven to harden the top surface of the CNT coating immediately after printing. FIGURE 2 shows an optical microscope image of the CNT coating after baking. CNT islands can clearly be seen in the image. The sample was then fired in a vacuum oven. In one firing process, the temperature was increased with a rate of 180°C per hour. The temperature was then maintained at 315°C for 10 min. to evaporate the organic material in the CNT coating mixture. Then, the oven was flooded with N2 gas to prevent the CNTs from becoming graphitized, while the temperature was further increased to 450°C for 10 min. to melt the glass frit. In one embodiment, the melted glass frit improved the adhesion between the conducting layer and the CNT coating. The sample was then cooled down to room temperature. FIGURE 3 shows the optical microscope image of the sample after the firing process. In this example, the thickness of these CNT islands was around 2-4 microns.
For comparison of the field emission properties, samples were printed 2, 3, and 5 times. With an increasing number of printed layers, the CNT islands became larger and more dense. Each time the samples were printed, they were baked at 100°C for 10 min. before they were printed again. FIGURE 4 shows an optical microscope image of a sample printed 5 times. Clearly visible in FIGURE 4 are some ^CNT clusters that have connected with each other.
To compare field emission properties, all the samples (printed once, twice, 3, and 5 times) were tested by mounting them with a phosphor screen in a diode configuration, as shown in FIGURE 11, with a gap of about 0.5 mm between the anode and cathode. The test assembly was placed in a vacuum chamber and pumped down to 1O7 Torr pressure. The electrical properties of the cathode are then measured by applying a negative, pulsed voltage (AC) to the cathode and holding the anode at ground potential, while measuring the current at the anode. A DC potential could also be used for the testing. A graph of the emission current vs. electric field for the samples is shown in FIGURE 5.
The sample printed twice exhibited the best field emission properties, i.e., emission at lowest electric field strength. A field emission image of the sample printed twice is shown in FIGURE 6, which shows very good uniformity and high emission site density. The electric field at an emission current of 30 niA was 7.82, 6.34, 6.44, and 7.2 V/micron respectively. The data indicate that an optimal CNT island density corresponded to printing the CNT paste twice in this example. For the samples that were printed 3 and more times, the field emission properties degraded with increasing density of the CNT islands. This is indicative of an electric field shielding effect, which is detrimental to the field emission behavior in those samples, hi other embodiments of the present invention, the printing process may be modified to produce an optimal CNT island size and density, corresponding to the best field emission results, with a single printing operation.
For further comparison, a taping process was performed to activate the CNTs after the firing process (Yang Chang, Jyh-Rong Sheu, Cheng-Chung Lee, Industrial Technology Research Institute, Hsinchu, TW, "Method of Improving Field Emission Efficiency for Fabrication Carbon Nanotube Field Emitters," U.S. Patent No. 6,436,221). Clear tape (#336, 3M) was used to active the CNTs. The sample printed twice was chosen for the experiment, since this was the sample which exhibited the best field emission behavior. The tape was laminated on the CNT coating using the same process as described in U.S. Patent No. 6,436,221. Then, the tape was peeled away. FIGURE 7 shows the field emission current vs. electric field curves of the samples before and after taping. The data indicate that there is little difference in the field emission properties between the taped and untaped samples.
In another illustrative example of the present invention, CNT paste was printed on a larger area with a patterned structure, as opposed to the previous samples which were formed on a blanket layer of ITO deposited on a glass substrate. For a CNT cold cathode device, a triode structure may be used in order to lower the extraction voltage and substantially lower the cost. For this example, a purified SWNT form of CNTs (Carbon Nanotechnologies, Inc.) was used. Referring to FIGURE 8, CNT paste 103 was printed onto the surface of a patterned structure 101, 106, 107. First, 6 micron-thick silver paste electrodes 106 were screen-printed on a glass substrate 101. Then a 50 micron-thick insulating overcoat 107 was printed, thus leaving small openings in the silver electrode 106 on the surface. The size of the openings was 300 microns x 800 microns in one case, while the number of the openings was 160 x 480 pixels. The total cathode active area was 10 inch by 10 inch.
The CNT paste was printed into the wells through a patterned 355-mesh screen (see FIGURE 1). The steps of a screen-printing process in one embodiment of the present invention are illustrated in FIGURES 6A-6F. Referring to FIGURE 6A, which illustrates a cross-sectional diagram of the screen printing apparatus, a stage (or chuck) 613 receives the substrate 614 to be printed with the paste (or ink) 611. The paste 611 is deposited on one side of the printing surface 610 of an image mesh screen 616. A squeegee 612 is the means for evenly applying the paste 611 over the openings 605 in the mesh screen 616. Referring to FIGURE 6B, the stage 613 along with the substrate 614 is aligned to the screen, such that a desired snap off distance between the screen 616 and the substrate 614 is achieved. The alignment is made via manipulation of the stage 613 and substrate 614 in the x,y,z directions 615, whereby additional angular corrections or alignments may also be performed. In FIGURE 6C, the movement of the squeegee 612 across the surface 610 of the mesh screen 616 in the direction 620 is performed, which effectively distributes the paste 611 evenly over the screen surface 610. The paste 611 is forced through the mesh openings 605 by the force of the squeegee 612. In FIGURE 6D, the stage 613 and substrate 614, now printed with the paste 611, is lowered 625 away from the mesh screen 616. FIGURE 6E illustrates the resulting stage 613 and substrate 614 printed with paste 611. hi FIGURE 6F, the stage 613 is removed, leaving the desired product, substrate 614 printed with paste 611 according to the pattern of the mesh screen 616.
The insulating overcoat 107 was 30-40 microns higher than the CNT coating 103. The sample was then baked and fired according to the procedure presented in the preceding examples. The field emission properties were then tested as previously mentioned. FIGURE 9 shows a field emission image of a sample obtained by testing in a diode mode at an emission current of 120 mA. The image shows that the field emission was uniform over the large area. The dark area on the edges was a result of a warped anode screen, which created a non-uniform gap between the cathode and the anode. A representative hardware environment for practicing the present invention is depicted in FIGURE 10, which illustrates an exemplary hardware configuration of data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510, such as a conventional microprocessor, and a number of other units interconnected via system bus 512. Data processing system 513 includes random access memory (RAM) 514, read only memory (ROM) 516, and input/output (I/O) adapter 518 for connecting peripheral devices such as disk units 520 and tape drives 540 to bus 512, user interface adapter 522 for connecting keyboard 524, mouse 526, and/or other user interface devices such as a touch screen device (not shown) to bus 512, communication adapter 534 for connecting data processing system 513 to a data processing network, and display adapter 536 for connecting bus 512 to display device 538. CPU 510 may include other circuitry not shown herein, which will include circuitry commonly found within a microprocessor, e.g., execution unit, bus interface unit, arithmetic logic unit, etc. Display device 538 represents possible embodiments of the present invention.
FIGURE 11 illustrates a portion of a field emission display 538 made using a cathode in a diode configuration, such as created above. Included with the cathode is a conductive layer 106 and the CNT emitter 103. The anode may be comprised of a glass substrate 612, and indium tin layer 613, and a cathodoluminescent layer 614. An electrical field is set up between the anode and the cathode. Such a display 538 could be utilized within a data processing system 513, such as illustrated with respect to FIGURE 10.
Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

WHAT IS CLAIMED IS:
1. A method for forming a field emission cathode device comprising the step of depositing a surface layer of nanoparticle-material on a substrate such that said surface layer of nanoparticle-material forms a plurality of field emitting islands that are physically isolated from each other.
2. The method of claim 1, wherein said field emitting islands of nanoparticle-material: are greater than about 10 nm wide; have more than about 10 nm distance between each other; and are greater than about 1 nm thick.
3. The method of claim 1 , wherein said substrate comprises a conducting electrode layer.
4. The method of claim 1, wherein said nanoparticle-material layer is deposited by methods chosen from the group consisting of: screen-printing, brushing, spraying, dispersing, ink-jet printing, nano-imprinting, dip-pen lithography, x-ray lithography, optical lithography, and any combination thereof.
5. The method of claim 1, wherein the nanoparticle-material contains carbon nanotubes selected from the group consisting of: single-wall carbon nanotubes, double-wall carbon nanotubes, multiwall carbon nanotubes, buckytubes, carbon fibrils, chemically-modified carbon nanotubes, derivatized carbon nanotubes, metallic carbon nanotubes, semiconducting carbon nanotubes, and any combination thereof.
6. The method of claim 1, wherein the nanoparticle-material contains particles selected from the group consisting of: spherical particles, dish-shaped particles, lamellar particles, rod-like particles, metal particles, semiconductor particles, polymeric particles, ceramic particles, dielectric particles, clay particles, fibers, and any combination thereof.
7. The method of claim 1, wherein the nanoparticle-material is deposited using a 355- mesh screen having a mesh opening of about 25-30 microns wide.
8. A field emission cathode device comprising a surface layer of nanoparticle-material on a substrate such that said nanoparticle-material comprises a plurality of field emitting islands that are physically isolated from each other.
9. The device of claim 8, wherein said field emitting islands of nanoparticle-material: are greater than about 10 nm wide; have more than about 10 nm distance between each other; and are greater than about 1 nm thick.
10. The device of claim 8, wherein said substrate comprises a conducting electrode layer.
11. The device of claim 8, wherein said nanoparticle-material layer is deposited by methods chosen from the group consisting of: screen-printing, brushing, spraying, dispersing, ink-jet printing, nano-imprinting, dip-pen lithography, x-ray lithography, optical lithography, and any combination thereof.
12. The device of claim 8, wherein the nanoparticle-material contains carbon nanotubes selected from the group consisting of: single-wall carbon nanotubes, double-wall carbon nanotubes, multiwall carbon nanotubes, buckytubes, carbon fibrils, chemically-modified carbon nanotubes, derivatized carbon nanotubes, metallic carbon nanotubes, semiconducting carbon nanotubes, and any combination thereof.
13. The device of claim 8, wherein the nanoparticle-material contains particles selected from the group consisting of: spherical particles, dish-shaped particles, lamellar particles, rod-like particles, metal particles, semiconductor particles, polymeric particles, ceramic particles, dielectric particles, clay particles, fibers, and any combination thereof.
14. The device of claim 1, wherein the nanoparticle-material is deposited using a 355- mesh screen having a mesh opening of about 25-30 microns wide.
15. A field emission display apparatus comprising an anode assembly and a cathode assembly, said cathode assembly further comprising: an electrically conducting layer; and a field emission cathode material deposited as a surface layer of nanoparticle-material on said electrically conducting layer, such that said nanoparticle-material forms a plurality of field emitting islands that are physically isolated from each other.
16. The apparatus of claim 15, wherein said field emitting islands of nanoparticle- material: are greater than about 10 run wide; have more than about 10 nm distance between each other; and are greater than about 1 nm thick.
17. The apparatus of claim 15, wherein said nanoparticle-material layer is deposited by methods chosen from the group consisting of: screen-printing, brushing, spraying, dispersing, ink-jet printing, nano-imprinting, dip-pen lithography, x-ray lithography, optical lithography, and any combination thereof.
18. The apparatus of claim 15, wherein the nanoparticle-material contains carbon nanotubes selected from the group consisting of: single-wall carbon nanotubes, double-wall carbon nanotubes, multiwall carbon nanotubes, buckytubes, carbon fibrils, chemically- modified carbon nanotubes, derivatized carbon nanotubes, metallic carbon nanotubes, semiconducting carbon nanotubes, and any combination thereof.
19. The apparatus of claim 15, wherein the nanoparticle-material contains particles selected from the group consisting of: spherical particles, dish-shaped particles, lamellar particles, rod-like particles, metal particles, semiconductor particles, polymeric particles, ceramic particles, dielectric particles, clay particles, fibers, and any combinations thereof.
20. The apparatus of claim 15, wherein the nanoparticle-material is deposited using a 355-mesh screen having a mesh opening of about 25-30 microns wide.
PCT/US2005/031775 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation WO2007035178A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007536693A JP5090917B2 (en) 2004-09-10 2005-09-08 Enhancement of field emission by non-activated carbon nanotubes
CN2005800302566A CN101432838B (en) 2004-09-10 2005-09-08 Field emission cathode device, display device and manufacturing method
KR1020077004886A KR101092540B1 (en) 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US60912804P 2004-09-10 2004-09-10
US60/609,128 2004-09-10
US11/215,696 US7736209B2 (en) 2004-09-10 2005-08-30 Enhanced electron field emission from carbon nanotubes without activation
US11/215,696 2005-08-30

Publications (2)

Publication Number Publication Date
WO2007035178A2 true WO2007035178A2 (en) 2007-03-29
WO2007035178A3 WO2007035178A3 (en) 2009-06-18

Family

ID=37889280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/031775 WO2007035178A2 (en) 2004-09-10 2005-09-08 Enhanced electron field emission from carbon nanotubes without activation

Country Status (6)

Country Link
US (1) US7736209B2 (en)
JP (1) JP5090917B2 (en)
KR (1) KR101092540B1 (en)
CN (1) CN101432838B (en)
TW (1) TWI378155B (en)
WO (1) WO2007035178A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7777928B2 (en) * 2005-02-28 2010-08-17 Chad Byron Moore Electrode enhancements for fiber-based displays
US9743142B2 (en) * 2008-02-19 2017-08-22 Time Warner Cable Enterprises Llc Multi-stream premises apparatus and methods for use in a content delivery network
JP5476751B2 (en) * 2009-03-13 2014-04-23 独立行政法人物質・材料研究機構 Nanocarbon emitter, manufacturing method thereof, and surface light emitting device using the same
KR101302335B1 (en) * 2009-09-23 2013-08-30 (주)엘지하우시스 Flooring material and preparation method thereof
KR101283578B1 (en) * 2009-12-11 2013-07-08 한국전자통신연구원 Plastic Substrates and Methods of Fabricating the Same
DE102014107134B4 (en) * 2013-05-24 2017-09-21 Electronics And Telecommunications Research Institute A single power source multi-electrode field emission device and method for driving the same
US20140363643A1 (en) * 2013-06-07 2014-12-11 International Business Machines Corporation Surface-Selective Carbon Nanotube Deposition Via Polymer-Mediated Assembly
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067937A1 (en) * 2003-09-25 2005-03-31 Industrial Technology Research Institute Carbon nanotube field emitter array and method for fabricating the same

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930009170B1 (en) 1991-10-24 1993-09-23 삼성전관 주식회사 Method of making a dispenser-type cathode
JP2985467B2 (en) 1992-01-22 1999-11-29 三菱電機株式会社 Method for producing impregnated cathode
DE4405768A1 (en) 1994-02-23 1995-08-24 Till Keesmann Field emission cathode device and method for its manufacture
FR2726688B1 (en) * 1994-11-08 1996-12-06 Commissariat Energie Atomique FIELD-EFFECT ELECTRON SOURCE AND MANUFACTURING METHOD THEREOF, APPLICATION TO CATHODOLUMINESCENCE VISUALIZATION DEVICES
TW320732B (en) 1995-04-20 1997-11-21 Matsushita Electron Co Ltd
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
JP3624992B2 (en) 1996-04-22 2005-03-02 富士通株式会社 Method for forming partition wall of display panel
US5830527A (en) 1996-05-29 1998-11-03 Texas Instruments Incorporated Flat panel display anode structure and method of making
US5726524A (en) 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
WO1998005920A1 (en) 1996-08-08 1998-02-12 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US6057637A (en) 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
US6310432B1 (en) 1997-05-21 2001-10-30 Si Diamond Technology, Inc. Surface treatment process used in growing a carbon film
JP3790047B2 (en) 1998-07-17 2006-06-28 株式会社ノリタケカンパニーリミテド Manufacturing method of electron emission source
DE69834673T2 (en) 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Method for producing an electron-emitting source
US6409567B1 (en) 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
WO1999066523A1 (en) 1998-06-18 1999-12-23 Matsushita Electric Industrial Co., Ltd. Electron emitting device, electron emitting source, image display, and method for producing them
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6441550B1 (en) 1998-10-12 2002-08-27 Extreme Devices Inc. Carbon-based field emission electron device for high current density applications
JP4109809B2 (en) 1998-11-10 2008-07-02 キヤノン株式会社 Method for producing fine wire containing titanium oxide
JP4069532B2 (en) * 1999-01-11 2008-04-02 松下電器産業株式会社 Carbon ink, electron-emitting device, method for manufacturing electron-emitting device, and image display device
JP3943272B2 (en) 1999-01-18 2007-07-11 双葉電子工業株式会社 Film forming method of carbon nanotube
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
JP2000260298A (en) 1999-03-05 2000-09-22 Sony Corp Cold cathode field electron emission element, its manufacture and cold cathode field electron emission display device
US6538367B1 (en) 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6277318B1 (en) 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
AUPQ930800A0 (en) 2000-08-10 2000-08-31 Megara (Australia) Pty Ltd Finishing of metal surfaces and related applications
US6553096B1 (en) 2000-10-06 2003-04-22 The University Of North Carolina Chapel Hill X-ray generating mechanism using electron field emission cathode
US6699642B2 (en) * 2001-01-05 2004-03-02 Samsung Sdi Co., Ltd. Method of manufacturing triode carbon nanotube field emitter array
US6436221B1 (en) 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
JP2003166040A (en) 2001-02-08 2003-06-13 Hitachi Maxell Ltd Fine particles of metal alloy and manufacturing method therefor
JP2002343280A (en) 2001-05-16 2002-11-29 Hitachi Ltd Display unit and method of manufacturing the same
US6911767B2 (en) 2001-06-14 2005-06-28 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US6890230B2 (en) 2001-08-28 2005-05-10 Motorola, Inc. Method for activating nanotubes as field emission sources
US7195938B2 (en) 2001-10-19 2007-03-27 Nano-Proprietary, Inc. Activation effect on carbon nanotubes
US20060252163A1 (en) 2001-10-19 2006-11-09 Nano-Proprietary, Inc. Peelable photoresist for carbon nanotube cathode
US6813828B2 (en) 2002-01-07 2004-11-09 Gel Pak L.L.C. Method for deconstructing an integrated circuit package using lapping
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
US20040109813A1 (en) 2002-12-05 2004-06-10 National Tsing Hua University Process and device for upgrading current emission
JP2005005079A (en) 2003-06-11 2005-01-06 Hitachi Displays Ltd Self-luminous flat display device and its manufacturing method
US7125308B2 (en) 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050067937A1 (en) * 2003-09-25 2005-03-31 Industrial Technology Research Institute Carbon nanotube field emitter array and method for fabricating the same

Also Published As

Publication number Publication date
US7736209B2 (en) 2010-06-15
TW200622031A (en) 2006-07-01
KR20080009258A (en) 2008-01-28
CN101432838A (en) 2009-05-13
TWI378155B (en) 2012-12-01
KR101092540B1 (en) 2011-12-14
US20070278925A1 (en) 2007-12-06
CN101432838B (en) 2012-11-14
JP2008512849A (en) 2008-04-24
WO2007035178A3 (en) 2009-06-18
JP5090917B2 (en) 2012-12-05

Similar Documents

Publication Publication Date Title
US7736209B2 (en) Enhanced electron field emission from carbon nanotubes without activation
US7462498B2 (en) Activation of carbon nanotubes for field emission applications
KR100982631B1 (en) Enhanced field emission from carbon nanotubes mixed with particles
US7365482B2 (en) Field emission display including electron emission source formed in multi-layer structure
US20060226763A1 (en) Display device with electron emitters and method for making the same
US20090095704A1 (en) Patterning cnt emitters
KR20050060287A (en) Method for forming carbon nanotube emitter
KR20040108713A (en) Field electron emission film, field electron emission electrode and field electron emission display
Lee et al. Carbon nanotube-based field-emission displays for large-area and full-color applications
US20130313963A1 (en) Carbon nanotube field emission device with height variation control
US20050064167A1 (en) Carbon nanotubes
JP2005524198A (en) Electron field emitter and related compositions
JP2006261074A (en) Coating method of field emission material and field emission element
JP2007149616A (en) Field emission element and its manufacturing method
KR100664021B1 (en) Post-treatment method of printed carbon nanotube for electron field emission device
JP4984130B2 (en) Nanocarbon emitter, manufacturing method thereof, and surface light emitting device
Cho et al. P‐99: Field Emission Properties of RNA‐Carbon Nanotube Hybrid Film Using a Spray Method
Cho et al. P‐100: Field‐Emission Properties of Photosensitive Carbon Nanotube Using Ethanol
JP2008053177A (en) Nano carbon emitter, its manufacturing method and surface light emitting device
JP2010218773A (en) Nano-carbon emitter, its manufacturing method, and plane light-emitting element using the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 1020077004886

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2007536693

Country of ref document: JP

Ref document number: 200580030256.6

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase

Ref document number: 05858550

Country of ref document: EP

Kind code of ref document: A2