WO2007030483A3 - Method and system of using nanotube fabrics as joule heating elements for memories and other applications - Google Patents

Method and system of using nanotube fabrics as joule heating elements for memories and other applications Download PDF

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Publication number
WO2007030483A3
WO2007030483A3 PCT/US2006/034626 US2006034626W WO2007030483A3 WO 2007030483 A3 WO2007030483 A3 WO 2007030483A3 US 2006034626 W US2006034626 W US 2006034626W WO 2007030483 A3 WO2007030483 A3 WO 2007030483A3
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WO
WIPO (PCT)
Prior art keywords
nanotube
phase change
applications
article
disclosed
Prior art date
Application number
PCT/US2006/034626
Other languages
French (fr)
Other versions
WO2007030483A2 (en
Inventor
Jonathan W Ward
Thomas Rueckes
Mitchell Meinhold
Brent M Segal
Original Assignee
Nantero Inc
Jonathan W Ward
Thomas Rueckes
Mitchell Meinhold
Brent M Segal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Jonathan W Ward, Thomas Rueckes, Mitchell Meinhold, Brent M Segal filed Critical Nantero Inc
Priority to EP06802997A priority Critical patent/EP1922743A4/en
Priority to US12/066,053 priority patent/US8525143B2/en
Priority to AU2006287609A priority patent/AU2006287609B2/en
Priority to CA002621397A priority patent/CA2621397A1/en
Publication of WO2007030483A2 publication Critical patent/WO2007030483A2/en
Publication of WO2007030483A3 publication Critical patent/WO2007030483A3/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Abstract

Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includesproviding an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material. A plurality of designs using various geometric orientations of nanotube fabrics, phase change materials, and drive and detection circuitry is disclosed. Additionally, methods of fabricating nanotube heat emitters are disclosed.
PCT/US2006/034626 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications WO2007030483A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP06802997A EP1922743A4 (en) 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US12/066,053 US8525143B2 (en) 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
AU2006287609A AU2006287609B2 (en) 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
CA002621397A CA2621397A1 (en) 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71439005P 2005-09-06 2005-09-06
US60/714,390 2005-09-06

Publications (2)

Publication Number Publication Date
WO2007030483A2 WO2007030483A2 (en) 2007-03-15
WO2007030483A3 true WO2007030483A3 (en) 2008-06-05

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PCT/US2006/034626 WO2007030483A2 (en) 2005-09-06 2006-09-06 Method and system of using nanotube fabrics as joule heating elements for memories and other applications

Country Status (5)

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US (1) US8525143B2 (en)
EP (1) EP1922743A4 (en)
AU (1) AU2006287609B2 (en)
CA (1) CA2621397A1 (en)
WO (1) WO2007030483A2 (en)

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Also Published As

Publication number Publication date
AU2006287609A1 (en) 2007-03-15
CA2621397A1 (en) 2007-03-15
US20100327247A1 (en) 2010-12-30
AU2006287609B2 (en) 2012-08-02
WO2007030483A2 (en) 2007-03-15
EP1922743A4 (en) 2008-10-29
US8525143B2 (en) 2013-09-03
EP1922743A2 (en) 2008-05-21

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