WO2007025521A3 - Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement - Google Patents

Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement Download PDF

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Publication number
WO2007025521A3
WO2007025521A3 PCT/DE2006/001513 DE2006001513W WO2007025521A3 WO 2007025521 A3 WO2007025521 A3 WO 2007025521A3 DE 2006001513 W DE2006001513 W DE 2006001513W WO 2007025521 A3 WO2007025521 A3 WO 2007025521A3
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WIPO (PCT)
Prior art keywords
semiconductor component
insulation layer
production
substrate
component
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PCT/DE2006/001513
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English (en)
French (fr)
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WO2007025521A2 (de
Inventor
Karl Weidner
Original Assignee
Osram Opto Semiconductors Gmbh
Karl Weidner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Karl Weidner filed Critical Osram Opto Semiconductors Gmbh
Priority to CN2006800318234A priority Critical patent/CN101253623B/zh
Priority to US11/991,197 priority patent/US7859005B2/en
Priority to KR1020087003687A priority patent/KR101295606B1/ko
Priority to EP06791327A priority patent/EP1920462A2/de
Priority to JP2008528330A priority patent/JP5215853B2/ja
Publication of WO2007025521A2 publication Critical patent/WO2007025521A2/de
Publication of WO2007025521A3 publication Critical patent/WO2007025521A3/de

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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Abstract

Bei einem erfindungsgemäßen Verfahren zur Erzeugung eines Halbleiterbauelements, insbesondere einer Halbleiterstruktur mit einer mittels elektronischen Bauelementen (2) auf einem Substrat (1) erzeugten Oberflächenstruktur oder Topografie, werden ein elektronisches Bauelement (2) oder mehrere elektronische Bauelemente auf ein Substrat (1) aufgebracht und eine Isolierschicht (3) auf die auf die mittels des mindestens einen Bauelements (2) auf dem Substrat (1) erzeugte Topographie aufgebracht. Nachfolgend werden Ankontaktierungsöffnungen (5) in der Isolierschicht (3) an Kontaktierungsstellen (8, 9) des mindestens einen elektronischen Bauelements erzeugt, die Isolierschicht (3) und die Kontaktierungsstellen (8, 9) in den Ankontaktierungsöffnungen (5) planar metallisiert und die Metallisierung zur Erzeugung von elektrischen Verbindungen (4) strukturiert, wobei die Isolierschicht (3) eine Glasbeschichtung aufweist.
PCT/DE2006/001513 2005-08-30 2006-08-30 Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement WO2007025521A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2006800318234A CN101253623B (zh) 2005-08-30 2006-08-30 用于制造具有平面接触的半导体器件的方法以及半导体器件
US11/991,197 US7859005B2 (en) 2005-08-30 2006-08-30 Method for the production of a semiconductor component comprising a planar contact, and semiconductor component
KR1020087003687A KR101295606B1 (ko) 2005-08-30 2006-08-30 평면 접점을 포함하는 반도체 소자의 제조 방법 및 반도체소자
EP06791327A EP1920462A2 (de) 2005-08-30 2006-08-30 Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement
JP2008528330A JP5215853B2 (ja) 2005-08-30 2006-08-30 プレーナ形のコンタクト形成部を備えた半導体素子の作製方法および半導体素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005041099A DE102005041099A1 (de) 2005-08-30 2005-08-30 LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik
DE102005041099.5 2005-08-30

Publications (2)

Publication Number Publication Date
WO2007025521A2 WO2007025521A2 (de) 2007-03-08
WO2007025521A3 true WO2007025521A3 (de) 2007-05-03

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PCT/DE2006/001513 WO2007025521A2 (de) 2005-08-30 2006-08-30 Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement

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Country Link
US (1) US7859005B2 (de)
EP (1) EP1920462A2 (de)
JP (1) JP5215853B2 (de)
KR (1) KR101295606B1 (de)
CN (1) CN101253623B (de)
DE (1) DE102005041099A1 (de)
TW (1) TWI313075B (de)
WO (1) WO2007025521A2 (de)

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DE102007033288A1 (de) * 2007-07-17 2009-01-22 Siemens Ag Elektronisches Bauelement und Vorrichtung mit hoher Isolationsfestigkeit sowie Verfahren zu deren Herstellung
US20090079057A1 (en) * 2007-09-24 2009-03-26 Infineon Technologies Ag Integrated circuit device
DE102008011809A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008019902A1 (de) 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement
DE102008015551A1 (de) * 2008-03-25 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit planarer Kontaktierung und Verfahren zu dessen Herstellung
DE102009039891A1 (de) * 2009-09-03 2011-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Modul aufweisend zumindest einen ersten Halbleiterkörper mit einer Strahlungsaustrittsseite und einer Isolationsschicht und Verfahren zu dessen Herstellung
DE102009042205A1 (de) * 2009-09-18 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
CN102456803A (zh) * 2010-10-20 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构
US9437756B2 (en) 2013-09-27 2016-09-06 Sunpower Corporation Metallization of solar cells using metal foils
KR101856108B1 (ko) * 2015-04-24 2018-05-09 주식회사 아모센스 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판
KR101856107B1 (ko) * 2015-04-24 2018-05-09 주식회사 아모센스 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판
KR101856109B1 (ko) * 2015-04-24 2018-05-09 주식회사 아모센스 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판
US10529646B2 (en) 2015-04-24 2020-01-07 Amosense Co., Ltd. Methods of manufacturing a ceramic substrate and ceramic substrates
KR101856106B1 (ko) * 2015-04-24 2018-05-09 주식회사 아모센스 세라믹 기판 제조 방법 및 이 제조방법으로 제조된 세라믹 기판
KR102563421B1 (ko) * 2016-07-19 2023-08-07 주식회사 아모센스 세라믹 기판 제조 방법

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TW200715621A (en) 2007-04-16
JP5215853B2 (ja) 2013-06-19
US20090278157A1 (en) 2009-11-12
JP2009506558A (ja) 2009-02-12
KR101295606B1 (ko) 2013-08-12
WO2007025521A2 (de) 2007-03-08
KR20080039904A (ko) 2008-05-07
DE102005041099A1 (de) 2007-03-29
EP1920462A2 (de) 2008-05-14
TWI313075B (en) 2009-08-01
US7859005B2 (en) 2010-12-28
CN101253623B (zh) 2010-05-19

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