WO2007014694A1 - Verfahren zur herstellung eines elektronischen bauelements - Google Patents
Verfahren zur herstellung eines elektronischen bauelements Download PDFInfo
- Publication number
- WO2007014694A1 WO2007014694A1 PCT/EP2006/007441 EP2006007441W WO2007014694A1 WO 2007014694 A1 WO2007014694 A1 WO 2007014694A1 EP 2006007441 W EP2006007441 W EP 2006007441W WO 2007014694 A1 WO2007014694 A1 WO 2007014694A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- electrical functional
- functional layer
- movement
- electrical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for producing an electronic component on a surface of a substrate, wherein the electronic component with, seen perpendicular to the surface of the substrate, at least two overlapping and at least in a surface region F overlapping arranged electrically functional layers is formed, wherein the at least two electrical Functional layers are patterned on the substrate directly or indirectly in a continuous process, wherein the substrate is moved relative to a structuring unit.
- Such a method is known from WO 2004/047144 A2.
- An organic electronic device such as an organic field effect transistor (OFET), circuits having such devices, and a manufacturing method will be described.
- the formation of the electronic component takes place via a low-cost printing method.
- OFET organic field effect transistor
- DE 101 26 859 A1 describes a method for producing conductive structures, active components produced therewith, such as organic field-effect transistors (OFETs) or organic light-emitting diodes (OLEDs), and circuits with such components.
- the conductive structures such as printed conductors or electrodes are produced by means of printing technology on a thin, flexible plastic film, wherein all known
- Printing process in particular gravure, high pressure, planographic printing, screen printing or pad printing, are called suitable.
- the use of continuous processes in the manufacture of electronic components enables their low-cost mass production at high process speeds.
- the individual electrical functional layers from which the electronic component is constructed must be formed one after the other and positioned one above the other in the correct position and arrangement according to a predetermined layout. The higher the speed of the substrate and / or the
- Structuring unit is selected in the continuous process, the more likely is an occurrence of deviations in the range of the ideal positioning of the electrical functional layers with respect to other, already present on the substrate electrical functional layers.
- a direct formation and simultaneous structuring of the electrical functional layer is preferably carried out by a printing process.
- an electrical functional layer can also be patterned by laser or etching technique only after its formation. In both cases, depending on the process, an area fraction of the electrical functional layer is formed outside the ideal position that was predetermined by the layout.
- the object is for the method for producing an electronic component on a surface of a substrate, wherein the electronic component with, seen perpendicular to the surface of the substrate, at least two overlapping and at least in a surface region F overlapping arranged electrically functional layers is formed, wherein the at least two electrically functional layers are patterned on the substrate directly or indirectly in a continuous process, wherein the substrate is moved relative to a structuring unit, achieved by a) a first electrical functional layer of the at least two electrical functional layers is structured so that a first length dimension (Li ) of the first electrical functional layer parallel to the surface of the substrate and in a relative direction of movement of the substrate relative to the structuring unit by at least 5 microns longer, preferably by more than lmm longer out is formed as a length dimension (L F ) of the surface area F in the relative direction of movement and parallel to the surface of the
- the substrate is moved relative to the structuring unit, it is understood that either the substrate itself and / or the structuring unit can be moved. In this case, either only the substrate can be moved and the structuring unit can be stationary, or the structuring unit can be movable and the substrate can be stationary, or else both the substrate and the structuring unit can be movable.
- the method according to the invention makes it possible to position a further electrical functional layer to be formed after the formation of such a dimensioned first electrical functional layer and to be aligned with respect to the first electrical functional layer with extremely little effort, since there is a slight deviation from the ideal positioning of the further electrical functional layer does not affect the functionality and the electrical characteristics of the electronic component. Accordingly, an electronic component formed by the method according to the invention tolerates, in the relative direction of movement and / or perpendicular to the relative direction of movement, a deviation from the layout in the positioning of the first electrical functional layer relative to a further electrical functional layer, depending on the position of the ideal position of the first electrical functional layer With regard to the area F. Thus, the process speed: further increased and the probability of occurrence of defective electronic components are reduced.
- the first length dimension of the first electrical functional layer in Relative movement direction is formed by 50 to 500 microns longer than the length dimension of the surface area F in relative direction of movement. This design represents a compromise between the additional space required by the method for the electrical functional layers and the probability of achieving a non-functional or only partially functional component.
- the first electrical functional layer is positioned with respect to the surface region F in such a way that a first centroid of the first electrical functional layer and a centroid of the surface region F are superimposed in the layout perpendicular to the surface of the substrate. As a result, in case a), the first electrical one dominates
- Functional layer according to layout the surface area F in relative movement direction both front and rear, so that a centroid of another electrical functional layer in relative direction of movement can be positioned with both a negative and positive deviation from its ideal position according to layout.
- the first electrical functional layer projects beyond the area F perpendicular to the relative direction of movement on both sides, so that a centroid of a further electrical functional layer perpendicular to the relative direction of movement with both a negative and positive lateral deviation from its ideal position Layout can be positioned.
- a second electrical functional layer of the at least two electrical functional layers is structured such that a second width dimension of the second electrical Functional layer parallel to the surface of the substrate and perpendicular to the relative direction of movement by at least 5 microns wider, preferably by more than lmm wider, is formed as a width dimension of the surface area F perpendicular to the relative direction of movement and parallel to the surface of the substrate.
- This likewise ensures that a different positioning of the substrate in the plane of the substrate perpendicular to the relative direction of movement when the first and second electrical functional layers are formed successively can be largely tolerated.
- Centroid of the second electrical functional layer and the centroid of the surface region F perpendicular to the surface of the substrate are superimposed.
- the second electrical functional layer in the layout projects beyond the surface area F in a relative direction of movement on both sides, so that a lateral deviation of the second electrical functional layer from the ideal position according to the layout can be tolerated in the relative direction of movement.
- a printing process such as a gravure, high-pressure, planographic printing, through-printing or pad printing process is used.
- a throughprint is understood to mean screen printing or stencil printing.
- Such printing processes can be carried out at high process speeds.
- an electrical functional layer directly by means of printing be formed directly and already in the desired shape on the substrate.
- photolithography patterning method generally refers to all etching methods using masks or masking layers.
- Functional layer that has been formed on the substrate, for example by vapor deposition or sputtering possible.
- Functional layer partially removed by laser. In the positioning of the laser with respect to the electrical functional layer already formed on the substrate, this usually results in small deviations from the ideal position, so that a deviation of the electrical functional layer formed results in the layout. If a photoresist is applied over an entire area to an electrical functional layer, exposed through a mask, removed the non-hardened areas of the paint, carried out an etching process and then removes the photoresist, resulting from slight deviations in the positioning of the mask from its ideal position for the formed electrical functional layer over the layout position deviations. Furthermore, the electrical functional layer can already be printed, for example, with an etch-resistant mask layer in the desired areas, and the non-printed areas of the electrical functional layer can be removed by etching.
- the etch resistant Mask layer removed and exposed the remaining remaining, structured in the desired shape areas of the electrical functional layer.
- the direct pressure of an electrical functional layer also deviations from the ideal position arise. These are transferred from the mask layer directly to the electrical functional layer structured therewith.
- an electrical functional layer can be formed directly and already in the desired form on the substrate by means of inkjet printing.
- the ink jet method also enables the application of a mask layer to pattern a previously formed electrical functional layer therewith.
- a relative speed of the substrate to the structuring unit in the continuous process in the range of 0.5 to 200 m / min, preferably in the range of 10 to 100 m / min, is selected. This enables mass production of electronic components at a low manufacturing cost.
- a flexible substrate in particular an elongated plastic film, which is optionally multi-layered, is used as the substrate.
- plastic films of polyester, polyethylene, polyethylene terephthalate or polyimide are suitable.
- a thickness of the substrate in the range of 6 .mu.m to 200 .mu.m, preferably in the range of 12 .mu.m to 50 .mu.m, is selected.
- a roll-to-roll transport is performed during the continuous process.
- the uncoated flexible substrate is wound onto a roll, the substrate is pulled off the roll and passed through a process machine, thereby structured and finally wound up as a coated substrate onto a further roll. This allows the processing of long substrate tapes, the
- Positioning opposite the process machine must be done only once at the beginning of a new substrate roll.
- the at least two electrical functional layers each having a layer thickness in the range from lnm to 100 ⁇ m, preferably in the range from 10 nm to 300 nm, are formed.
- the at least two electrical functional layers can be seen in cross section through the substrate in the electronic
- the at least two electrical functional layers are thus in direct contact with each other.
- Functional layers seen in the cross-section through the substrate in the electronic component at least a third electrical functional layer at least in the area F are arranged.
- the at least two electrical functional layers are thus not in direct contact with each other.
- the at least one third electrical functional layer perpendicular to the surface of the Seen substrate seen the surface area F projected on all sides, wherein a third length dimension of the at least one third electrical functional layer parallel to the surface of the substrate and in relative direction of movement by at least 5 microns longer, preferably by more than lmm longer, is formed as the length dimension of the surface area F in relative - Movement direction and parallel to the surface of the substrate and wherein a third width dimension of the third electrical functional layer parallel to the surface of the substrate and perpendicular to the relative direction of movement by at least 5 ⁇ m wider, preferably by more than lmm wider, is formed as a width dimension of the surface area F perpendicular to Relative direction of movement and parallel to the surface of the substrate.
- the first electrical functional layer is formed as one or more, in particular organic, electrode (s).
- organic materials here all types of organic, organometallic and inorganic plastics are considered, which are referred to in English as "plastics".
- plastics A limitation in the dogmatic sense of organic material as a carbon-containing material is therefore not provided, but it is rather intended to the use of, for example, silicones.
- the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but it is also quite possible to use "small molecules”.
- polyaniline or polypyrrole have proven to be electrically conductive organic materials.
- vapor-deposited or sputtered metal layers for example of at least one of the materials gold, silver, copper, aluminum, platinum, titanium or the like, are also suitable as the electrode layer for the first electrical functional layer. These are then preferably structured by means of laser or etching.
- the second electrical functional layer is in direct contact with the first electrical functional layer, then it has proven useful if the second electrical
- organic insulating material among other things, polyvinylphenol has been proven.
- organic semiconductor material for example, polythiophene is suitable.
- the second electrical functional layer is formed as one or more, in particular organic, electrode (s).
- the materials already mentioned above for the first electrical functional layer formed as an electrode can likewise be used.
- a field effect transistor, a capacitor, a diode or a component with at least one via, in each case in particular with at least one organic electrical functional layer, is formed as the electronic component.
- Under a via is an opening, usually perpendicular to the substrate plane, understood, via which an electrical connection between not directly in contact with each other electrically functional layers of a Function layer stack is produced.
- vias for example via an etching process using a structuring layer, it may come to dislocations of the type described above, wherein a deviation of the position of a vias from the ideal position according to layout can be compensated for the inventive method.
- FIGS. 1a to 3b are intended to illustrate the invention by way of example. So shows:
- FIG. 1a is a plan view of a coated substrate
- FIG. 1 b shows a cross section A - A 'through the coated substrate according to FIG.
- FIG. 2a is a plan view of another coated substrate
- Figure 2b shows a cross section B - B 'through the coated
- Figure 3a is a plan view of another coated
- Figure 3b shows a cross section C - C through the coated
- FIG. 1a shows a plan view of a substrate 1 made of PET film, which has been printed on the surface of the substrate 1 with three electrical functional layers 2, 3, 4 for producing an electronic component, in this case a diode. Seen perpendicular to the surface of the substrate 1, the electrical functional layers 2, 3, 4 are one above the other and arranged overlapping at least in a surface area F. In this case, the electrical functional layer 2 forms a first electrical functional layer, wherein a first longitudinal dimension L 1 of the first electrical functional layer parallel to the surface of the substrate 1 and in relative
- Movement direction of the substrate 1 during the printing (marked in Figure Ia by an arrow on the left in the image) is formed by about 25 microns longer than a length dimension L F of the surface region F in the printing direction and parallel to the surface of the substrate 1.
- Functional layer is made of electrically conductive material, here copper, designed as an electrode.
- the electrical functional layer 3 forms a second electrical functional layer which is spaced from the first functional layer by a third electrical functional layer 4 of poly-3-alkylthiophene.
- the second electrical functional layer is formed of silver.
- the second electrical functional layer has been formed so that a second width dimension B 2 of the second electrical functional layer parallel to the surface of the substrate 1 and perpendicular to the relative direction of movement by at least about 50 microns wider than a width dimension B F of the surface area F perpendicular to the relative Movement direction and parallel to the surface of the substrate 1.
- Figure Ia shows the ideal case in accordance with the print layout for the electronic component, wherein the first electrical functional layer in terms of the surface area F is positioned such that a first area centroid of the first electrical functional layer and a centroid S F perpendicular of the surface area F for Substrate 1 are superimposed and the second electrical functional layer with respect to the surface area F is positioned such that a second centroid of the second electrical functional layer and the centroid S F of the surface area F perpendicular to the substrate 1 are also superimposed. In practice, however, this is not the case due to the deviations occurring during structuring.
- the layer structure shown in FIG. 1a is tolerant of such a deviation or displacement of the first functional layer in the relative direction of movement and / or a deviation or displacement of the second functional layer perpendicular to the relative direction of movement with respect to the illustrated ideal case according to the layout.
- FIG. 1 b shows a cross-section A - A 'through the printed substrate from FIG. 1 a, wherein the substrate 1 and the electrical functional layers 2, 3, 4 printed thereon can be seen.
- the electrical functional layer 2 forms the first electrical functional layer
- the electrical functional layer 3 forms the second electronic functional layer
- the electrical functional layer 4 forms a third electrical functional layer.
- Figure 2a shows a plan view of another printed substrate 1 made of PET film, which is printed with three electrical functional layers 2 ', 3', 4 'for producing an electronic component, in this case a capacitor, on the surface of the substrate 1.
- the electrical functional layers 2 ', 3', 4 ' are arranged one above the other and overlapping at least in a surface region F.
- the electrical functional layer 2 forms a first electrical Functional layer, wherein a first length dimension L 1 of the first electrical functional layer parallel to the surface of the substrate 1 and in the relative direction of movement of the substrate 1 during the printing of the substrate 1 (in Figure 2a by an arrow on the left in the image) formed by about lmm longer is formed as a length dimension L F of the area F in the relative direction of movement and parallel to the surface of the substrate 1.
- the first electrical functional layer is made of electrically conductive material, here copper, as an electrode.
- the electrical functional layer 3 'forms a further electrical functional layer, which is spaced from the first functional layer by a third electrical functional layer 4' of electrically insulating polymer.
- the further electrical functional layer is formed as a silver electrode.
- the first electrical functional layer has been formed so that a first width dimension Bi of the first electrical functional layer parallel to the surface of the
- Substrate 1 and perpendicular to the relative direction of movement about 600 ⁇ m wider than a width dimension B F of the surface region F perpendicular to the printing direction and parallel to the surface of the substrate 1.
- the required for electrical contacting of the first and further electrical functional layer electrically conductive leads or tracks were not shown.
- FIG. 2 a shows the ideal case according to the print layout for the electronic component, in which the first electrical functional layer is positioned with respect to the surface region F such that a first centroid of the first electrical functional layer and a centroid S F of the surface region F are perpendicular to the substrate 1 lie on top of each other and the third as well the further electrical functional layer are positioned with respect to the surface region F such that their respective centroid and the centroid S F of the surface region F perpendicular to the substrate 1 also lie one above the other. In practice, however, this is not the case due to the deviations occurring during printing.
- the layer structure shown in FIG. 2a is tolerant of such a deviation or displacement of the first functional layer in the relative direction of movement and / or a deviation or displacement of the first functional layer perpendicular to the relative direction of movement with respect to the illustrated ideal case according to the print layout.
- FIG. 2b shows a cross-section B-B 'through the printed substrate 1 from FIG. 2a, wherein the substrate 1 and the electrical functional layers 2', 3 ', 4' printed thereon can be seen.
- the electrical functional layer 2 forms the first electrical functional layer
- the electrical functional layer 3 "forms the further electrical
- Figure 3a shows a plan view of another printed substrate 1 made of PET film, which with two electrical
- the electrical functional layer 2 forms a first electrical functional layer, wherein a first Length dimension L 1 of the first electrical functional layer parallel to the surface of the substrate 1 and in a relative direction of movement of the substrate 1 during the printing of the substrate 1 (in Figure 3a by an arrow on the left in the image) is formed by about lmm longer than a length dimension L F of the area F in the relative direction of movement and parallel to the surface of the substrate 1.
- the first electrical functional layer is made of semiconducting material, here polyalkylthiophene.
- the electrical functional layer 3 forms a further electrical
- the further electrical functional layer is formed of silver and designed in the form of two comb structures, which are to form the source and drain electrodes of the OFET.
- the surface area F is defined such that the maximum outer dimensions (in the relative direction of movement and perpendicular thereto) of the electrical functional layer 3 dictate the circumference of the area F, although within the so-called defined surface area F is not present at every point an overlap of the two electrical functional layers.
- This definition of the area F is expedient here, since it is important when printing the comb structure with the first functional layer to completely cover the comb structure.
- the first electrical functional layer has been formed so that a first width dimension Bi of the first electrical functional layer parallel to the surface of the substrate 1 and perpendicular to the relative direction of movement is formed about lmm wider than a width dimension B F of the surface area F perpendicular to the relative direction of movement and parallel to the surface of the substrate 1.
- the for electrical contacting of the first and further electrical Functional layers possibly required electrically conductive leads or tracks were not shown.
- Figure 3a shows the ideal case in accordance with the print layout for the electronic component, wherein the first electrical functional layer in terms of the surface area F is positioned such that a first area centroid of the first electricaljansschichc and a centroid S F perpendicular of the surface area F seen for the substrate 1 overlie one another and the further electrical functional layer is positioned with respect to the surface area F so that its centroid and the centroid S F seen the surface area F perpendicular to the substrate 1 also overlap. In practice, however, this will not be the case due to the deviations that occur during printing.
- the layer structure shown in FIG. 3a is tolerant of such a deviation or displacement of the first functional layer in the relative direction of movement and / or a deviation or displacement of the first functional layer perpendicular to the relative direction of movement with respect to the illustrated ideal case according to the print layout.
- FIG. 3b shows a cross-section C-C through the printed substrate 1 from FIG. 3a, wherein the substrate 1 and the electrical functional layers 2, 3 printed on it can be seen.
- the electrical functional layer 2 forms the first electrical functional layer and the electrical functional layer 3 forms a further electrical functional layer.
Abstract
Description
Claims
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/997,235 US7846838B2 (en) | 2005-07-29 | 2006-07-27 | Method for producing an electronic component |
CN2006800279456A CN101233626B (zh) | 2005-07-29 | 2006-07-27 | 制造电子元件的方法 |
MX2008000756A MX2008000756A (es) | 2005-07-29 | 2006-07-27 | Metodo para producir un componente electronico. |
CA002615285A CA2615285A1 (en) | 2005-07-29 | 2006-07-27 | Method for producing an electronic component |
EP06776454A EP1911108B1 (de) | 2005-07-29 | 2006-07-27 | Verfahren zur herstellung eines elektronischen bauelements |
KR1020087002127A KR101325754B1 (ko) | 2005-07-29 | 2006-07-27 | 전자 컴포넌트 제조 방법 |
JP2008523244A JP2009503829A (ja) | 2005-07-29 | 2006-07-27 | 電子コンポーネントを製造するための方法 |
ES06776454T ES2375937T3 (es) | 2005-07-29 | 2006-07-27 | Procedimiento para la fabricación de un componente electrónico. |
AT06776454T ATE529904T1 (de) | 2005-07-29 | 2006-07-27 | Verfahren zur herstellung eines elektronischen bauelements |
AU2006275070A AU2006275070A1 (en) | 2005-07-29 | 2006-07-27 | Method for producing an electronic component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005035589.7 | 2005-07-29 | ||
DE102005035589A DE102005035589A1 (de) | 2005-07-29 | 2005-07-29 | Verfahren zur Herstellung eines elektronischen Bauelements |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007014694A1 true WO2007014694A1 (de) | 2007-02-08 |
Family
ID=37433672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/007441 WO2007014694A1 (de) | 2005-07-29 | 2006-07-27 | Verfahren zur herstellung eines elektronischen bauelements |
Country Status (13)
Country | Link |
---|---|
US (1) | US7846838B2 (de) |
EP (1) | EP1911108B1 (de) |
JP (1) | JP2009503829A (de) |
KR (1) | KR101325754B1 (de) |
CN (1) | CN101233626B (de) |
AT (1) | ATE529904T1 (de) |
AU (1) | AU2006275070A1 (de) |
CA (1) | CA2615285A1 (de) |
DE (1) | DE102005035589A1 (de) |
ES (1) | ES2375937T3 (de) |
MX (1) | MX2008000756A (de) |
TW (1) | TWI422085B (de) |
WO (1) | WO2007014694A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005044306A1 (de) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
DE102006047388A1 (de) * | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
US7704786B2 (en) * | 2007-12-26 | 2010-04-27 | Organicid Inc. | Printed organic logic circuits using a floating gate transistor as a load device |
US7723153B2 (en) * | 2007-12-26 | 2010-05-25 | Organicid, Inc. | Printed organic logic circuits using an organic semiconductor as a resistive load device |
CN109087902B (zh) * | 2018-08-15 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种走线结构及其制备方法、显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050051770A1 (en) * | 2003-09-04 | 2005-03-10 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
WO2005022664A2 (en) * | 2003-09-02 | 2005-03-10 | Plastic Logic Limited | Production of electronic devices |
Family Cites Families (251)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB723598A (en) | 1951-09-07 | 1955-02-09 | Philips Nv | Improvements in or relating to methods of producing electrically conductive mouldings from plastics |
US3512052A (en) | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
DE2102735B2 (de) | 1971-01-21 | 1979-05-10 | Transformatoren Union Ag, 7000 Stuttgart | Einrichtung zur Regelung des Mengendurchsatzes von Mühlen und Brechern |
US3769096A (en) | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
AU488652B2 (en) | 1973-09-26 | 1976-04-01 | Commonwealth Scientific And Industrial Research Organisation | Improvements in or relating to security tokens |
JPS543594B2 (de) | 1973-10-12 | 1979-02-24 | ||
DE2407110C3 (de) | 1974-02-14 | 1981-04-23 | Siemens AG, 1000 Berlin und 8000 München | Sensor zum Nachweis einer in einem Gas oder einer Flüssigkeit einthaltenen Substanz |
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
US4246298A (en) | 1979-03-14 | 1981-01-20 | American Can Company | Rapid curing of epoxy resin coating compositions by combination of photoinitiation and controlled heat application |
JPS5641938U (de) | 1979-09-10 | 1981-04-17 | ||
US4340057A (en) | 1980-12-24 | 1982-07-20 | S. C. Johnson & Son, Inc. | Radiation induced graft polymerization |
US4472627A (en) | 1982-09-30 | 1984-09-18 | The United States Of America As Represented By The Secretary Of The Treasury | Authenticating and anti-counterfeiting device for currency |
EP0108650A3 (de) | 1982-11-09 | 1986-02-12 | Zytrex Corporation | Programmierbarer MOS-Transistor |
DE3321071A1 (de) | 1983-06-10 | 1984-12-13 | Basf Ag | Druckschalter |
DE3338597A1 (de) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben |
US4554229A (en) | 1984-04-06 | 1985-11-19 | At&T Technologies, Inc. | Multilayer hybrid integrated circuit |
JPS6265472A (ja) | 1985-09-18 | 1987-03-24 | Toshiba Corp | Mis型半導体素子 |
US4726659A (en) | 1986-02-24 | 1988-02-23 | Rca Corporation | Display device having different alignment layers |
US4926052A (en) | 1986-03-03 | 1990-05-15 | Kabushiki Kaisha Toshiba | Radiation detecting device |
DE3751376T2 (de) | 1986-10-13 | 1995-11-16 | Canon Kk | Schaltungselement. |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
KR900702481A (ko) | 1988-06-21 | 1990-12-07 | 원본미기재 | 휴대용 전자 토큰 제조방법 |
US5364735A (en) | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
FR2644920B1 (fr) | 1989-03-21 | 1993-09-24 | France Etat | Dispositif d'affichage polychrome a memoire du type photoconducteur-electroluminescent |
US6331356B1 (en) | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
DE69018348T2 (de) | 1989-07-25 | 1995-08-03 | Matsushita Electric Ind Co Ltd | Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren. |
FI84862C (fi) | 1989-08-11 | 1992-01-27 | Vaisala Oy | Kapacitiv fuktighetsgivarkonstruktion och foerfarande foer framstaellning daerav. |
DE3942663A1 (de) | 1989-12-22 | 1991-06-27 | Gao Ges Automation Org | Datentraeger mit einem fluessigkristall-sicherheitselement |
US5206525A (en) | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FI91573C (sv) | 1990-01-04 | 1994-07-11 | Neste Oy | Sätt att framställa elektroniska och elektro-optiska komponenter och kretsar |
JP2969184B2 (ja) | 1990-04-09 | 1999-11-02 | カシオ計算機株式会社 | 薄膜トランジスタメモリ |
FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
US5202677A (en) | 1991-01-31 | 1993-04-13 | Crystal Images, Inc. | Display apparatus using thermochromic material |
DE4103675C2 (de) | 1991-02-07 | 1993-10-21 | Telefunken Microelectron | Schaltung zur Spannungsüberhöhung von Wechselspannungs-Eingangssignalen |
FR2673041A1 (fr) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | Procede de fabrication de micromodules de circuit integre et micromodule correspondant. |
EP0501456A3 (de) | 1991-02-26 | 1992-09-09 | Sony Corporation | Mit eine optischen Plattenantrieb ausgerüsteter Videospielcomputer |
US5408109A (en) | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
EP0511807A1 (de) | 1991-04-27 | 1992-11-04 | Gec Avery Limited | Apparat und Sensoreinheit zur Anzeige von zeitabhängigen Änderungen in einer physikalischen Grösse |
JP3224829B2 (ja) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
EP0610183B1 (de) | 1991-10-30 | 1995-05-10 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Belichtungsvorrichtung |
JP2709223B2 (ja) | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
FR2696043B1 (fr) | 1992-09-18 | 1994-10-14 | Commissariat Energie Atomique | Support à réseau d'éléments résistifs en polymère conducteur et son procédé de fabrication. |
EP0603939B1 (de) | 1992-12-21 | 1999-06-16 | Koninklijke Philips Electronics N.V. | Leitfähiges N-Typ-Polymer und Methode zur Herstellung desselben |
DE4243832A1 (de) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Tastsensoranordnung |
JP3457348B2 (ja) | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
FR2701117B1 (fr) | 1993-02-04 | 1995-03-10 | Asulab Sa | Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose. |
EP0615256B1 (de) | 1993-03-09 | 1998-09-23 | Koninklijke Philips Electronics N.V. | Herstellungsverfahren eines Musters von einem elektrisch leitfähigen Polymer auf einer Substratoberfläche und Metallisierung eines solchen Musters |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
DE4312766C2 (de) | 1993-04-20 | 1997-02-27 | Telefunken Microelectron | Schaltung zur Spannungsüberhöhung |
JPH0722669A (ja) | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | 可塑性機能素子 |
JP3035352B2 (ja) | 1993-08-24 | 2000-04-24 | メトリカ・インコーポレーテッド | 新規な使い捨て電子検定ディバイス |
JP3460863B2 (ja) | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
FR2710413B1 (fr) | 1993-09-21 | 1995-11-03 | Asulab Sa | Dispositif de mesure pour capteurs amovibles. |
US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
US6028649A (en) | 1994-04-21 | 2000-02-22 | Reveo, Inc. | Image display systems having direct and projection viewing modes |
KR100350817B1 (ko) | 1994-05-16 | 2003-01-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 유기반도체물질로형성된반도체장치 |
IL110318A (en) | 1994-05-23 | 1998-12-27 | Al Coat Ltd | Solutions containing polyaniline for making transparent electrodes for liquid crystal devices |
US5684884A (en) | 1994-05-31 | 1997-11-04 | Hitachi Metals, Ltd. | Piezoelectric loudspeaker and a method for manufacturing the same |
JP3246189B2 (ja) | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5528222A (en) | 1994-09-09 | 1996-06-18 | International Business Machines Corporation | Radio frequency circuit and memory in thin flexible package |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US5630986A (en) | 1995-01-13 | 1997-05-20 | Bayer Corporation | Dispensing instrument for fluid monitoring sensors |
DE19506907A1 (de) | 1995-02-28 | 1996-09-05 | Telefunken Microelectron | Schaltungsanordnung zur Variation eines Eingangssignals mit bestimmter Eingangsspannung und bestimmtem Eingangsstrom |
JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
JPH08328031A (ja) | 1995-06-02 | 1996-12-13 | Sharp Corp | フルカラー液晶表示装置およびその製造方法 |
JPH0933645A (ja) | 1995-07-21 | 1997-02-07 | Oki Electric Ind Co Ltd | トランスポンダの電源回路 |
US5652645A (en) | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
US5707894A (en) | 1995-10-27 | 1998-01-13 | United Microelectronics Corporation | Bonding pad structure and method thereof |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
EP0785457A3 (de) | 1996-01-17 | 1998-10-14 | Nippon Telegraph And Telephone Corporation | Optische Vorrichtung und dreidimensionale Anzeigevorrichtung |
US6326640B1 (en) | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
GB2310493B (en) | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (ja) | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | エアリア・グリッド・アレイ・パッケージの製造方法 |
DE19610284A1 (de) | 1996-03-15 | 1997-08-07 | Siemens Ag | Antennenspule |
JP2000512428A (ja) | 1996-06-12 | 2000-09-19 | ザ トラスティーズ オブ プリンストン ユニバーシテイ | 有機多色表示器製造のための薄膜パターン化 |
DE19629656A1 (de) | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe |
US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
DE19648937A1 (de) | 1996-11-26 | 1997-05-15 | Meonic Sys Eng Gmbh | Elektronisches Etikett |
US6259506B1 (en) | 1997-02-18 | 2001-07-10 | Spectra Science Corporation | Field activated security articles including polymer dispersed liquid crystals, and including micro-encapsulated field affected materials |
US6344662B1 (en) | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
US5946551A (en) | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US5841325A (en) | 1997-05-12 | 1998-11-24 | Hewlett-Packard Company | Fully-integrated high-speed interleaved voltage-controlled ring oscillator |
KR100248392B1 (ko) | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
EP0968537B1 (de) | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht |
EP1296280A1 (de) | 1997-09-11 | 2003-03-26 | Precision Dynamics Corporation | RF-ID Etikett mit einem integriertem Schaltkreis aus organischen Materialen |
US5973598A (en) | 1997-09-11 | 1999-10-26 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
US6251513B1 (en) | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (ja) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | 携帯型情報処理装置 |
WO1999030432A1 (en) | 1997-12-05 | 1999-06-17 | Koninklijke Philips Electronics N.V. | Identification transponder |
US5997817A (en) | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
US5998805A (en) | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
US6083104A (en) | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
EP1051745B1 (de) | 1998-01-28 | 2007-11-07 | Thin Film Electronics ASA | Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
DE19816860A1 (de) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chipkarte, insbesondere Guthabenkarte |
US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
US6369793B1 (en) | 1998-03-30 | 2002-04-09 | David C. Zimman | Printed display and battery |
DE69918308T2 (de) | 1998-04-10 | 2004-10-21 | E Ink Corp | Elektronische anzeige basierend auf organischen feldeffekt-transistoren |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
GB9808806D0 (en) | 1998-04-24 | 1998-06-24 | Cambridge Display Tech Ltd | Selective deposition of polymer films |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6107920A (en) | 1998-06-09 | 2000-08-22 | Motorola, Inc. | Radio frequency identification tag having an article integrated antenna |
US5967048A (en) | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
KR100282393B1 (ko) | 1998-06-17 | 2001-02-15 | 구자홍 | 유기이엘(el)디스플레이소자제조방법 |
KR100393324B1 (ko) | 1998-06-19 | 2003-07-31 | 띤 필름 일렉트로닉스 에이에스에이 | 집적 무기/유기 보상 박막 트랜지스터 회로 및 그 제조방법 |
DE19836174C2 (de) | 1998-08-10 | 2000-10-12 | Illig Maschinenbau Adolf | Heizung zum Erwärmen von thermoplastischen Kunststoffplatten und Verfahren zum Einstellen der Temperatur dieser Heizung |
US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
AU770909B2 (en) | 1998-08-26 | 2004-03-04 | Sensors For Medicine And Science, Inc. | Optical-based sensing devices |
JP4493741B2 (ja) | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE69831243T2 (de) | 1998-10-13 | 2006-08-10 | Sony Deutschland Gmbh | Herstellungsverfahren einer Licht emittierenden Anzeigevorrichtung mit aktiver Matrix |
DE19851703A1 (de) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6506438B2 (en) | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
EP1144197B1 (de) | 1999-01-15 | 2003-06-11 | 3M Innovative Properties Company | Thermisches Übertragungsverfahren. |
GB2347013A (en) | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
WO2000052457A1 (en) | 1999-03-02 | 2000-09-08 | Helix Biopharma Corporation | Card-based biosensor device |
US6180956B1 (en) | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
US6207472B1 (en) | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
DE60045092D1 (de) | 1999-03-29 | 2010-11-25 | Cambridge Display Tech Ltd | Zusammensetzung mit einem organischen elektrolumineszierenden Material |
US6514801B1 (en) | 1999-03-30 | 2003-02-04 | Seiko Epson Corporation | Method for manufacturing thin-film transistor |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
US6387736B1 (en) | 1999-04-26 | 2002-05-14 | Agilent Technologies, Inc. | Method and structure for bonding layers in a semiconductor device |
FR2793089B3 (fr) | 1999-04-28 | 2001-06-08 | Rene Liger | Transpondeur a antenne integree |
DE19919448A1 (de) | 1999-04-29 | 2000-11-02 | Miele & Cie | Kühlgerät und Verfahren zur Verkeimungsindikation |
US6736985B1 (en) | 1999-05-05 | 2004-05-18 | Agere Systems Inc. | High-resolution method for patterning a substrate with micro-printing |
DE19921024C2 (de) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Videospielanlage |
US6383664B2 (en) | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
JP4136185B2 (ja) | 1999-05-12 | 2008-08-20 | パイオニア株式会社 | 有機エレクトロルミネッセンス多色ディスプレイ及びその製造方法 |
EP1052594A1 (de) | 1999-05-14 | 2000-11-15 | Sokymat S.A. | Transponder und Spritzgussteil sowie Verfahren zu ihrer Herstellung |
JP2002544744A (ja) | 1999-05-17 | 2002-12-24 | ザ・グッドイヤー・タイヤ・アンド・ラバー・カンパニー | トランスポンダのためのプログラム可能な変調指数 |
TW556357B (en) | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
ATE344535T1 (de) | 1999-07-06 | 2006-11-15 | Elmos Semiconductor Ag | Cmos kompatibler soi-prozess |
JP2001085272A (ja) | 1999-07-14 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 可変容量コンデンサ |
US6366017B1 (en) | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
DE19933757A1 (de) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Chipkarte mit integrierter Batterie |
DE19935527A1 (de) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Aktive Folie für Chipkarten mit Display |
DE19937262A1 (de) | 1999-08-06 | 2001-03-01 | Siemens Ag | Anordnung mit Transistor-Funktion |
US6593690B1 (en) | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
JP4595143B2 (ja) | 1999-09-06 | 2010-12-08 | 双葉電子工業株式会社 | 有機elデバイスとその製造方法 |
EP1085320A1 (de) | 1999-09-13 | 2001-03-21 | Interuniversitair Micro-Elektronica Centrum Vzw | Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
EP1224999A4 (de) | 1999-09-28 | 2007-05-02 | Sumitomo Heavy Industries | Laserbohrverfahren und laserbohrvorrichtung |
US6340822B1 (en) | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
JP2004538618A (ja) | 1999-10-11 | 2004-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積回路 |
US6335539B1 (en) | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
JP2001147659A (ja) | 1999-11-18 | 2001-05-29 | Sony Corp | 表示装置 |
EP1103916A1 (de) | 1999-11-24 | 2001-05-30 | Infineon Technologies AG | Chipkarte |
US6136702A (en) | 1999-11-29 | 2000-10-24 | Lucent Technologies Inc. | Thin film transistors |
US6621098B1 (en) | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
EP1243035B1 (de) | 1999-12-21 | 2016-03-02 | Flexenable Limited | Herstellung von leiterbahnen |
CA2394886C (en) | 1999-12-21 | 2012-07-17 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
US7002451B2 (en) | 2000-01-11 | 2006-02-21 | Freeman Jeffrey R | Package location system |
JP2002162652A (ja) | 2000-01-31 | 2002-06-07 | Fujitsu Ltd | シート状表示装置、樹脂球状体、及びマイクロカプセル |
US6706159B2 (en) | 2000-03-02 | 2004-03-16 | Diabetes Diagnostics | Combined lancet and electrochemical analyte-testing apparatus |
TW497120B (en) | 2000-03-06 | 2002-08-01 | Toshiba Corp | Transistor, semiconductor device and manufacturing method of semiconductor device |
JP3614747B2 (ja) | 2000-03-07 | 2005-01-26 | Necエレクトロニクス株式会社 | 昇圧回路、それを搭載したicカード及びそれを搭載した電子機器 |
DE10012204A1 (de) | 2000-03-13 | 2001-09-20 | Siemens Ag | Einrichtung zum Kennzeichnen von Stückgut |
EP1134694A1 (de) | 2000-03-16 | 2001-09-19 | Infineon Technologies AG | Dokument mit integrierter elektronischer Schaltung |
JP2001267578A (ja) | 2000-03-17 | 2001-09-28 | Sony Corp | 薄膜半導体装置及びその製造方法 |
ATE311472T1 (de) | 2000-03-28 | 2005-12-15 | Diabetes Diagnostics Inc | Kontinuierliches verfahren zur herstellung von elektrochemischen wegwerffühlern |
AU2001259187A1 (en) * | 2000-04-27 | 2001-11-07 | Add-Vision, Inc. | Screen printing light-emitting polymer patterned devices |
EP1295169B1 (de) | 2000-05-24 | 2008-06-25 | Schott North America, Inc. | Elektrode für elektrochrome Vorrichtungen |
US6535057B2 (en) | 2000-05-29 | 2003-03-18 | Stmicroelectronics Ltd. | Programmable glitch filter |
US6329226B1 (en) | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
WO2001093652A2 (en) | 2000-06-06 | 2001-12-13 | Koninklijke Philips Electronics N.V. | Liquid crystal display device and method of manufacturing such |
DE10032260B4 (de) | 2000-07-03 | 2004-04-29 | Texas Instruments Deutschland Gmbh | Schaltungsanordnung zur Verdoppelung der Spannung einer Batterie |
DE10033112C2 (de) | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
US6483473B1 (en) | 2000-07-18 | 2002-11-19 | Marconi Communications Inc. | Wireless communication device and method |
JP2004507096A (ja) | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 有機電界効果トランジスタ(ofet),該有機電界効果トランジスタの製造方法、前記有機電界効果トランジスタから形成される集積回路、及び該集積回路の使用 |
DE10120687A1 (de) | 2001-04-27 | 2002-10-31 | Siemens Ag | Verkapseltes organisch-elektronisches Bauteil, Verfahren zu seiner Herstellung und seine Verwendung |
JP2004506985A (ja) | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 封入された有機電子構成素子、その製造方法および使用 |
JP2002068324A (ja) | 2000-08-30 | 2002-03-08 | Nippon Sanso Corp | 断熱容器 |
DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US6699728B2 (en) | 2000-09-06 | 2004-03-02 | Osram Opto Semiconductors Gmbh | Patterning of electrodes in oled devices |
DE10044842A1 (de) | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
DE10047171A1 (de) | 2000-09-22 | 2002-04-18 | Siemens Ag | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
KR20020036916A (ko) | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
DE10058559A1 (de) | 2000-11-24 | 2002-05-29 | Interactiva Biotechnologie Gmb | System zur Abwicklung eines Warentransfers und Warenvorrats-Behälter |
US6924688B1 (en) | 2000-11-28 | 2005-08-02 | Precision Dynamics Corporation | Rectifying charge storage device with antenna |
KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
DE10061297C2 (de) | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
DE10162037A1 (de) | 2000-12-18 | 2002-09-12 | Cubit Electronics Gmbh | Anordnung zur Aufnahme elektrischer Bausteine und kontaktloser Transponder |
GB2371910A (en) | 2001-01-31 | 2002-08-07 | Seiko Epson Corp | Display devices |
DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
EP1237207B1 (de) | 2001-03-02 | 2012-01-04 | FUJIFILM Corporation | Herstellungsverfahren einer organischen Dünnschicht-Vorrichtung |
JP2002289355A (ja) | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | 有機半導体ダイオード及び有機エレクトロルミネセンス素子表示装置 |
DE10117663B4 (de) | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Verfahren zur Herstellung von Matrixanordnungen auf Basis verschiedenartiger organischer leitfähiger Materialien |
DE10120686A1 (de) | 2001-04-27 | 2002-11-07 | Siemens Ag | Verfahren zur Erzeugung dünner homogener Schichten mit Hilfe der Siebdrucktechnik, Vorrichtung zur Durchführung des Verfahren und ihre Verwendung |
WO2002091495A2 (en) | 2001-05-07 | 2002-11-14 | Coatue Corporation | Molecular memory device |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US7244669B2 (en) | 2001-05-23 | 2007-07-17 | Plastic Logic Limited | Patterning of devices |
DE10126859A1 (de) | 2001-06-01 | 2002-12-12 | Siemens Ag | Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen |
DE10126860C2 (de) | 2001-06-01 | 2003-05-28 | Siemens Ag | Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP2003017248A (ja) | 2001-06-27 | 2003-01-17 | Sony Corp | 電界発光素子 |
DE20111825U1 (de) | 2001-07-20 | 2002-01-17 | Lammering Thomas | Printmedium |
CN100334263C (zh) * | 2001-08-09 | 2007-08-29 | 旭化成株式会社 | 有机半导体元件 |
DE10141440A1 (de) | 2001-08-23 | 2003-03-13 | Daimler Chrysler Ag | Tripodegelenk |
JP2003089259A (ja) | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6679036B2 (en) | 2001-10-15 | 2004-01-20 | Shunchi Crankshaft Co., Ltd. | Drive gear shaft structure of a self-moving type mower |
DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
DE10153656A1 (de) | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht |
DE10160732A1 (de) | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
DE10163267A1 (de) | 2001-12-21 | 2003-07-03 | Giesecke & Devrient Gmbh | Blattgut mit einem elektrischen Schaltkreis sowie Vorrichtung und Verfahren zur Bearbeitung des Blattguts |
DE10209400A1 (de) | 2002-03-04 | 2003-10-02 | Infineon Technologies Ag | Transponderschaltung mit einer Gleichrichterschaltung sowie Verfahren zur Herstellung einer Transponderschaltung mit einer Gleichrichterschaltung |
US6596569B1 (en) | 2002-03-15 | 2003-07-22 | Lucent Technologies Inc. | Thin film transistors |
US7204425B2 (en) | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
DE10212640B4 (de) | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
DE10219905B4 (de) | 2002-05-03 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement mit organischen funktionellen Schichten und zwei Trägern sowie Verfahren zur Herstellung eines solchen optoelektronischen Bauelements |
EP1367659B1 (de) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
KR100874638B1 (ko) * | 2002-06-01 | 2008-12-17 | 엘지디스플레이 주식회사 | 일렉트로루미네센스 표시소자의 제조장치 및 방법 |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
DE10229168A1 (de) | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Laminat mit einer als Antennenstruktur ausgebildeten elektrisch leitfähigen Schicht |
EP1383179A2 (de) | 2002-07-17 | 2004-01-21 | Pioneer Corporation | Organische Halbleiteranordnung |
AT502890B1 (de) | 2002-10-15 | 2011-04-15 | Atomic Austria Gmbh | Elektronisches überwachungssystem zur kontrolle bzw. erfassung einer aus mehreren sportartikeln bestehenden sportartikelkombination |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
WO2004042837A2 (de) | 2002-11-05 | 2004-05-21 | Siemens Aktiengesellschaft | Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu |
WO2004047144A2 (de) | 2002-11-19 | 2004-06-03 | Polyic Gmbh & Co.Kg | Organisches elektronisches bauelement mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
US20060035423A1 (en) | 2002-11-19 | 2006-02-16 | Walter Fix | Organic electronic component comprising the same organic material for at least two functional layers |
TWI233771B (en) * | 2002-12-13 | 2005-06-01 | Victor Company Of Japan | Flexible rigid printed circuit board and method of fabricating the board |
US7088145B2 (en) | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
EP1434281A3 (de) | 2002-12-26 | 2007-10-24 | Konica Minolta Holdings, Inc. | Herstellungsmethode eines Dünnfilmtransistors, Substrat und elektrische Schaltung |
DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
JP2004335492A (ja) * | 2003-03-07 | 2004-11-25 | Junji Kido | 有機電子材料の塗布装置およびそれを使用した有機電子素子の製造方法 |
US8665247B2 (en) | 2003-05-30 | 2014-03-04 | Global Oled Technology Llc | Flexible display |
US6950157B2 (en) | 2003-06-05 | 2005-09-27 | Eastman Kodak Company | Reflective cholesteric liquid crystal display with complementary light-absorbing layer |
FI20030919A (fi) * | 2003-06-19 | 2004-12-20 | Avantone Oy | Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti |
DE10330063A1 (de) | 2003-07-03 | 2005-02-03 | Siemens Ag | Verfahren zur Strukturierung und Integration organischer Schichten unter Schutz |
DE10330064B3 (de) | 2003-07-03 | 2004-12-09 | Siemens Ag | Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen |
US20050023972A1 (en) * | 2003-07-29 | 2005-02-03 | Lewandowski Mark A. | Method for printing electroluminescent lamps |
DE10335336B4 (de) | 2003-08-01 | 2011-06-16 | Polyic Gmbh & Co. Kg | Feldeffektbauelemente und Kondensatoren mit Elektrodenanordnung in einer Schichtebene |
DE10338277A1 (de) | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
DE10340641A1 (de) | 2003-09-03 | 2005-04-07 | Siemens Ag | Strukturierung von Gate-Dielektrika in organischen Feldeffekt-Transistoren |
JP4400327B2 (ja) | 2003-09-11 | 2010-01-20 | セイコーエプソン株式会社 | タイル状素子用配線形成方法 |
US7122828B2 (en) | 2003-09-24 | 2006-10-17 | Lucent Technologies, Inc. | Semiconductor devices having regions of induced high and low conductivity, and methods of making the same |
JP4415653B2 (ja) * | 2003-11-19 | 2010-02-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
US7358530B2 (en) | 2003-12-12 | 2008-04-15 | Palo Alto Research Center Incorporated | Thin-film transistor array with ring geometry |
-
2005
- 2005-07-29 DE DE102005035589A patent/DE102005035589A1/de not_active Ceased
-
2006
- 2006-07-27 ES ES06776454T patent/ES2375937T3/es active Active
- 2006-07-27 WO PCT/EP2006/007441 patent/WO2007014694A1/de active Application Filing
- 2006-07-27 JP JP2008523244A patent/JP2009503829A/ja active Pending
- 2006-07-27 AU AU2006275070A patent/AU2006275070A1/en not_active Abandoned
- 2006-07-27 MX MX2008000756A patent/MX2008000756A/es unknown
- 2006-07-27 CN CN2006800279456A patent/CN101233626B/zh active Active
- 2006-07-27 US US11/997,235 patent/US7846838B2/en active Active
- 2006-07-27 CA CA002615285A patent/CA2615285A1/en not_active Abandoned
- 2006-07-27 AT AT06776454T patent/ATE529904T1/de active
- 2006-07-27 EP EP06776454A patent/EP1911108B1/de active Active
- 2006-07-27 KR KR1020087002127A patent/KR101325754B1/ko active IP Right Grant
- 2006-07-28 TW TW095127582A patent/TWI422085B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005022664A2 (en) * | 2003-09-02 | 2005-03-10 | Plastic Logic Limited | Production of electronic devices |
US20050051770A1 (en) * | 2003-09-04 | 2005-03-10 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
Non-Patent Citations (4)
Title |
---|
BACKLUND T G ET AL: "Towards all-polymer field-effect transistors with solution processable materials", SYNTHETIC METALS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 148, no. 1, 3 January 2005 (2005-01-03), pages 87 - 91, XP004664964, ISSN: 0379-6779 * |
KAWASE T ET AL: "Inkjet printing of polymer thin film transistors", PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 438-439, 22 August 2003 (2003-08-22), pages 279 - 287, XP004448006, ISSN: 0040-6090 * |
REDINGER D ET AL: "An all-printed passive component technology for low-cost RFID", DEVICE RESEARCH CONFERENCE, 2003 JUNE 23-25, 2003, PISCATAWAY, NJ, USA,IEEE, 23 June 2003 (2003-06-23), pages 187 - 188, XP010655172, ISBN: 0-7803-7727-3 * |
SUBRAMANIAN V ET AL: "Printed organic transistors for ultra-low-cost RFID applications", POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS, 2004. POLYTRONIC 2004. 4TH IEEE INTERNATIONAL CONFERENCE ON PORTLAND, OR, USA 12-15 SEPT. 2004, PISCATAWAY, NJ, USA,IEEE, 12 September 2004 (2004-09-12), pages 67 - 71, XP010775926, ISBN: 0-7803-8744-9 * |
Also Published As
Publication number | Publication date |
---|---|
US20080200030A1 (en) | 2008-08-21 |
JP2009503829A (ja) | 2009-01-29 |
CA2615285A1 (en) | 2007-02-08 |
TW200717891A (en) | 2007-05-01 |
EP1911108B1 (de) | 2011-10-19 |
CN101233626B (zh) | 2010-07-28 |
KR20080032124A (ko) | 2008-04-14 |
KR101325754B1 (ko) | 2013-11-04 |
CN101233626A (zh) | 2008-07-30 |
ATE529904T1 (de) | 2011-11-15 |
US7846838B2 (en) | 2010-12-07 |
DE102005035589A8 (de) | 2007-07-26 |
DE102005035589A1 (de) | 2007-02-01 |
EP1911108A1 (de) | 2008-04-16 |
MX2008000756A (es) | 2008-02-21 |
ES2375937T3 (es) | 2012-03-07 |
AU2006275070A1 (en) | 2007-02-08 |
TWI422085B (zh) | 2014-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2087519B1 (de) | Feldeffekttransistor sowie elektrische schaltung | |
EP1487605B1 (de) | Vorrichtung und verfahren zur laserstrukturierung von funktionspolymeren und verwendungen | |
DE10240105B4 (de) | Herstellung organischer elektronischer Schaltkreise durch Kontaktdrucktechniken | |
EP1911108B1 (de) | Verfahren zur herstellung eines elektronischen bauelements | |
WO2004004025A2 (de) | Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen | |
EP1925033A1 (de) | Elektronische schaltung und verfahren zur herstellung einer solchen | |
DE102008026216A1 (de) | Elektronische Schaltung | |
EP1911089B1 (de) | Elektronisches bauelement | |
DE102004041497B4 (de) | "Organisches Elektronik-Bauteil sowie Verfahren zur Herstellung eines solchen" | |
EP1704606B1 (de) | Verfahren zur Herstellung eines organischen Transistors mit selbstjustierender Gate-Elektrode | |
DE102015011066B4 (de) | Substrat, insbesondere für den Aufbau einer dehnbaren Elektronik und Verfahren zu dessen Herstellung | |
DE102007062944B4 (de) | Elektronische Schaltung | |
DE112016000497T5 (de) | Verfahren zum Herstellen eines Dünnfilmtransistors und Dünnfilmtransistor | |
EP1658648B1 (de) | Herstellungsverfahren für ein organisches elektronisches bauteil mit hochaufgelöster strukturierung | |
DE102015100692B4 (de) | Verfahren zur Erstellung einer zweidimensionalen elektronischen Struktur und zweidimensionale elektronische Struktur | |
DE10343351B4 (de) | Substrat zum Tintenstrahldrucken und Verfahren zu dessen Herstellung | |
DE10349027B4 (de) | Organische Schaltung mit kleinen Strukturen und Verfahren zu deren Herstellung | |
DE102006035293B4 (de) | Verfahren zur Herstellung eines organischen elektrischen Bauelements | |
DE102019201792A1 (de) | Halbleiter-Schaltungsanordnung und Verfahren zu deren Herstellung | |
DE102009047315A1 (de) | Organischer Feldeffekttransistor und Verfahren zur Herstellung desselben | |
DE102006035749A1 (de) | Verfahren zur Herstellung mindestens eines Bauteils sowie Bauteil | |
DE10356675A1 (de) | Elektrodenanordnung | |
EP1498957A1 (de) | Feldeffekttransistor und Verfahren zum Herstellen eines Feldeffekttransistors | |
WO2007144164A2 (de) | Verfahren zur herstellung einer strukturierten schichtenfolge auf einem substrat | |
WO2007144163A2 (de) | Verfahren zur herstellung einer strukturierten schichtfolge auf einem substrat |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006776454 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2615285 Country of ref document: CA Ref document number: 2006275070 Country of ref document: AU |
|
WWE | Wipo information: entry into national phase |
Ref document number: MX/a/2008/000756 Country of ref document: MX |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020087002127 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008523244 Country of ref document: JP Ref document number: 200680027945.6 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2006275070 Country of ref document: AU Date of ref document: 20060727 Kind code of ref document: A |
|
WWP | Wipo information: published in national office |
Ref document number: 2006275070 Country of ref document: AU |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11997235 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 2006776454 Country of ref document: EP |