WO2007014320A2 - Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process - Google Patents

Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process Download PDF

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Publication number
WO2007014320A2
WO2007014320A2 PCT/US2006/029378 US2006029378W WO2007014320A2 WO 2007014320 A2 WO2007014320 A2 WO 2007014320A2 US 2006029378 W US2006029378 W US 2006029378W WO 2007014320 A2 WO2007014320 A2 WO 2007014320A2
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WO
WIPO (PCT)
Prior art keywords
substrate
tiles
region
donor substrate
donor
Prior art date
Application number
PCT/US2006/029378
Other languages
French (fr)
Other versions
WO2007014320A3 (en
WO2007014320A9 (en
Inventor
Francois J. Henley
Original Assignee
Silicon Genesis Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/191,464 external-priority patent/US7674687B2/en
Application filed by Silicon Genesis Corporation filed Critical Silicon Genesis Corporation
Priority to JP2008524186A priority Critical patent/JP2009507363A/en
Publication of WO2007014320A2 publication Critical patent/WO2007014320A2/en
Publication of WO2007014320A9 publication Critical patent/WO2007014320A9/en
Publication of WO2007014320A3 publication Critical patent/WO2007014320A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Definitions

  • the present invention relates generally to technique including a method and a structure for forming substrates using a large scale implantation process and a tile approach. More particularly, the present method and system provides a method and system using a scanning implant process for the manufacture of photovoltaic cells. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other types of applications such as for three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems (“MEMS”), nano-technology structures, sensors, actuators, integrated circuits, biological and biomedical devices, and the like.
  • MEMS microelectromechanical systems
  • the silicon solar cell generates electrical power when exposed to solar radiation from the sun.
  • the radiation interacts with atoms of the silicon and forms electrons and holes that migrate to p-doped and n-doped regions in the silicon body and create voltage differentials and an electric current between the doped regions.
  • solar cells have been integrated with concentrating elements to improve efficiency. As an example, solar radiation accumulates and focuses using concentrating elements that direct such radiation to one or more portions of active photovoltaic materials. Although effective, these solar cells still have many limitations.
  • solar cells rely upon starting materials such as silicon .
  • silicon is often made using either polysilicon and/or single crystal silicon materials. These materials are often difficult to manufacture.
  • Polysilicon cells are often formed by manufacturing polysilicon plates. Although these plates may be formed effectively, they do not possess optimum properties for highly effective solar cells.
  • Single crystal silicon has suitable properties for high grade solar cells. Such single crystal silicon is, however, expensive and is also difficult to use for solar applications in an efficient and cost effective manner.
  • thin- film solar cells are less expensive by using less silicon material but their amorphous or polycrystalline structure are less efficient than the more expensive bulk silicon cells made from single-crystal silicon substrates.
  • the invention provides a technique including a method and a structure for forming multi-layered substrate structures, using a tiled approach, for the fabrication of devices, for example, on flat panel displays. More particularly, the present method and system provides a method and system using a scanning implant process for the manufacture of photovoltaic cells.
  • implanted impurities provide for a thickness of transferable material defined by a cleave plane in a donor substrate.
  • the thickness of transferable material may be used as a light absorber layer if the thickness of material has a sufficient thickness.
  • the thickness of material can also be used as a single crystal template for a subsequent epitaxial growth process. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other substrates for multi-layered integrated circuit devices, three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, microelectromechanical systems (“MEMS”), nano- technology structures, sensors, actuators, solar cells, biological and biomedical devices, and the like.
  • MEMS microelectromechanical systems
  • the present invention provides a method for manufacturing substrates using a continuous plasma immersion implant process or ion shower implantation process with varying degree of ion mass selection or non-mass selection.
  • the method includes providing a movable track member.
  • the movable track member is provided in a chamber.
  • the chamber includes an inlet port and an outlet port.
  • the movable track member can include one or more rollers, air bearings, belt member, and/or movable beam member to provide one or more substrates for a scanning process.
  • the method also includes providing a first substrate.
  • the first substrate includes a first plurality of tiles. The method maintains the first substrate including the first plurality of tiles in a vacuum.
  • the method includes transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member.
  • the first plurality of tiles are subjected to a scanning implant process.
  • the method also includes maintaining a second substrate including a second plurality of tiles in the inlet port while the first plurality of tiles are being implanted.
  • the method includes transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member upon completion of the implantation of the first plurality of tiles.
  • the method includes subjecting the second plurality of tiles to an implant process using the scanning implant process.
  • the present invention provides a method for forming substrates using a scanning process.
  • the method includes providing a movable track member.
  • the method includes providing a substrate including a plurality of tiles onto the movable track member.
  • the method includes maintaining the substrate in an inlet port provided by a chamber.
  • the method also includes transferring the substrate including the plurality of tiles using the movable track to a vicinity of a first implant process.
  • the first implant process includes a first scanning process characterized by a first gas, a first voltage, and a plurality of first ion species.
  • the method also includes subjecting the plurality of tiles to a second implant process.
  • the second implant process includes a second scanning process characterized by a second gas, a second voltage, and a plurality of second ion species.
  • the first implant process and the second implant process provide a thickness of material defined by a cleave plane in each of the plurality of tiles.
  • a tray device for performing one or more implantation processes.
  • the tray device includes a frame member.
  • the frame member includes a plurality of sites within a spatial region of the frame member.
  • the plurality of sites can be arranged in an array configuration.
  • the array can have a six by six site configuration or an eight by eight configuration, among others.
  • the plurality of sites may also be arranged to hold three by three 300 mm wafers, five by five 200 mm wafers, or six by six 150 mm wafers depending on the application.
  • the tray device includes a tray member housed in the frame member to provide support for a plurality of reusable substrate members. Alternatively, the arrangement can be N x M or others.
  • each of the reusable substrate member can include a substrate material such as a silicon bearing material, a germanium material, Group II/VI materials, Group III/V materials, and others.
  • the tray member is provided in an orientation to prevent defect to form on the reusable substrate members.
  • the tray member may be provided in a vertical position, or an upside down position, or in an angled orientation in relation to a direction of implantation (e.g., direction of ions being implanted into the reusable substrates) in certain embodiments.
  • the tray faces a direction away from direct gravitational force, although there may be variations.
  • the plurality of reusable substrates can be subjected to an scanning implant process.
  • the plurality of reusable substrates may further be subjected to a bond and/or a controlled cleave process, together or separately.
  • each of the plurality of reusable substrate member can have an implant shield surrounding a peripheral region of each of the reusable substrate members.
  • the implant shield may be amorphous silicon or other suitable materials. Accordingly, after cleaving, a cleave surface of the remaining reusable substrate member can be subjected to a polishing process in a specific embodiment. In other embodiments, the polishing process provides a flat surface for the remaining substrate member for further use.
  • the present invention provides a scanning implant apparatus using a plurality of tiles or the like to be processed.
  • the apparatus has a movable track member, e.g., chain, mechanical movement device, belt drive and belt.
  • the apparatus has at least a chamber coupled to the movable track member.
  • the chamber is adapted to house a substrate and maintain the substrate including the plurality of tiles in a vacuum or other determined environment.
  • the apparatus has an implant device provided by at least the chamber coupled to the movable track member.
  • the implant device is provided by subjecting the plurality of tiles to a plurality of particles using a first scanning process performed by movement of the substrate via the movable track member through the implant device provided by at least the chamber.
  • the present invention provides a method for forming a plurality of tile structures on a substrate member.
  • the method includes providing a transfer substrate, e.g., glass, semiconductor substrate, quartz, a composite, or other suitable material.
  • the transfer substrate has a surface region, which has a plurality of donor substrate regions, e.g., silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials, any combination of these, and others.
  • Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region.
  • Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate.
  • the method implants a plurality of particles concurrently through each of the donor substrate surface regions to form a cleave region provided by the plurality of particles between a portion of the donor substrate thickness and the donor substrate surface region.
  • the method also includes joining each of the donor substrate surface regions to a handle substrate surface region.
  • the handle substrate surface region is provided from a handle substrate.
  • the method includes removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
  • the present invention provides a reusable transfer substrate member for forming a tiled substrate structure.
  • the member including a transfer substrate, which has a surface region.
  • the surface region comprises a plurality of donor substrate regions.
  • Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region.
  • Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate.
  • Each of the donor substrate regions has the donor substrate thickness without a definable cleave region. That is, the donor substrate thickness exists but cannot be cleaved according to a specific embodiment.
  • the present invention provides a method for forming a plurality of tile structures on a substrate member, e.g., glass, quartz.
  • the method includes providing a transfer substrate, which has a surface region.
  • the surface region comprises a plurality of donor substrate regions.
  • Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region.
  • Each of the donor substrate regions -is spatially disposed overlying the surface region of the transfer substrate.
  • the method includes processing the donor substrate regions provided on the transfer substrate concurrently to form a cleave region between a portion of the donor substrate thickness and the donor substrate surface region for each of the donor substrates.
  • the processing can be a thermal process, implanting process, etching process, chemical and/or electro-chemical process, any combination of these, and others, which cause a change to a predetermined portion of the donor substrate thickness to form the cleave region, which becomes cleavable from non-cleavable.
  • the method joins each of the donor substrate surface regions to a handle substrate surface region, which is from a handle substrate.
  • the method also includes removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
  • the present invention uses controlled energy and selected conditions to preferentially cleave a plurality of thin films of material from a plurality of donor substrates, which includes multi-material sandwiched films. This cleaving process selectively removes the plurality of thin films of material from the substrates while preventing a possibility of damage to the film or a remaining portion of the substrate.
  • the present method and structures allows for more efficient processing using implantation of a plurality of donor substrates simultaneously according to a specific embodiment.
  • the invention provides a method and structure to form large master donor substrates including a plurality of donor substrate regions using an economical approach and fewer implanting steps, as compared to conventional techniques.
  • Alternative embodiments of the present invention use a continuous mechanism including a movable track member and a tray device to provide an efficient method for scanning process.
  • Such scanning process may include, but not limited to, an implantation process, hi a preferred embodiment, the implantation process provides a thickness of transferable material defined by a cleave plane in a donor substrate. The thickness of transferable material may be further processed to provide a high quality semiconductor material for application such as photovoltaic devices, 3D MEMS, IC packaging, semiconductor devices, and others.
  • the present method provides for single crystal silicon for highly efficient photovoltaic cells among others, hi an alternative preferred embodiment, embodiments according to the present invention may provide for a seed layer that can further provide for layering of a hetero-structure epitaxial process.
  • the hetero-structure epitaxial process can be used to form thin multi-junction photovoltaic cells, among others.
  • GaAs and GaInP layers may be deposited heteroepitaxially onto a germanium seed layer, which is a transferred layer formed using an implant process according to an embodiment of the present invention Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits may be described throughout the present specification and more particularly below.
  • Figure 1 is a simplified process flow diagram illustrating a method for forming substrates according to an embodiment of present invention.
  • Figure 2 is a simplified diagram illustrating a system for a continuous process for forming substrates according to an embodiment of the present invention.
  • Figure 3-10 is a simplified diagram illustrating a continuous process for forming substrates according to an embodiment of the present invention.
  • Figure 11 is a simplified diagram illustrating a tray device for the continuous process for forming substrates according to an embodiment of the present invention.
  • Figure 1 IA is a simplified diagram illustrating an implant process according to an embodiment of the present invention.
  • Figure 12-14 are simplified diagrams illustrating a tray device for the continuous process for forming substrates according to an embodiment of the present invention.
  • Figure 15-21 illustrate a method of forming a layer transferred substrate according to an embodiment of the present invention.
  • the present method and system provide a method and system using a scanning implant process for the manufacture of photovoltaic cells.
  • implanted process provide for a thickness of transferable material defined by a cleave plane in a donor substrate.
  • the invention has a wider range of applicability; it can also be applied to other types of applications such as for three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems (“MEMS”), nano-technology structures, sensors, actuators, integrated circuits, biological and biomedical devices, and the like.
  • MEMS microelectromechanical systems
  • a method of forming substrates in a continuous process may be briefly outline as follow:
  • each of the substrate members includes a plurality of tiles (e.g., reusable substrate (e.g., bulk silicon, bulk germanium, other materials) members);
  • reusable substrate e.g., bulk silicon, bulk germanium, other materials
  • the above sequence of steps provide a method of forming substrates using a continuous process according to an embodiment of the present invention.
  • the method includes using a movable track member to transfer at least one substrate members including a plurality of tiles to be implanted in a scanning process, which occurs while the substrate is being moved spatially across a processing head of an implant device.
  • the movable track member provides a continuous process for implanting a plurality of tiles provided on one or more than one substrate members.
  • steps may be added, one or more steps may be removed, or one or more steps maybe provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specific and more particularly below.
  • the method includes a start steplOl.
  • the method provides one or more substrate members (step 103).
  • Each of the substrate members includes a plurality of tiles.
  • the substrate member can be a tray device, which will be described in more detail below.
  • the substrate member can be any suitable member and/or device capable of holding more than two tiles, which are used as a material to be implanted.
  • the tray device can include mechanical, electrostatic, or other attachment members to hold the tiles in place.
  • the tiles are large portions of bulk substrate materials that can be repeated used for the manufacture of multilayered substrates using layer transfer techniques.
  • the method also provides a movable track in a chamber (step 105).
  • the movable track can be a belt device or other suitable device that allow for the transportation of the substrate from a first spatial location to a second spatial location and other locations between the first and second locations.
  • the movable track device is suitably designed to be coupled to an implant process, which is chamber based or other suitable device.
  • the movable track member can include rollers, air bearing, belt, and/or a movable beam in certain embodiments..
  • the method includes providing a vacuum environment (step 107) within a chamber that houses the movable track member.
  • the method maintains a first substrate member includes a first plurality of tiles in the vacuum (step 109).
  • the first plurality of tiles may include semiconductor substrates such as silicon wafers and the like.
  • the first vacuum may be provided using a load lock system but can others.
  • the method transfers the first substrate member including the first plurality of tiles from an inlet of the chamber to the movable track member (step 111).
  • the method includes subjecting the first plurality of tiles to an implant process (stepl 13).
  • the implant process can be provided by a plasma immersion implant (PIII) system.
  • Other implant processes can include those using ion shower, ion beam, or other mass separated and/or mass non-separated techniques. Or course, there can be other variations, modifications, and alternatives.
  • the method includes maintaining and queuing a second substrate member including a second plurality of tiles in the vacuum environment (step 115) while the first plurality of tiles are being implanted.
  • the method transfers the second substrate member including the second plurality of tiles to the movable track member.(step 117).
  • the method includes subjecting the second plurality of tiles to the implant process (step 121) after completion of implanting the first plurality of tile (step 119).
  • the method includes completing implantation of the second plurality of tiles (step 123) and continues to process other substrates as provided.
  • the above sequence of steps provide a method of forming substrates using a continuous process according to an embodiment of the present invention.
  • the method includes using a movable track member to transfer at least one substrate members including a plurality of tiles to be implanted in a scanning process, which occurs while the substrate is being moved spatially across a processing head of an implant device.
  • the movable track member provides a continuous process for implanting a plurality of tiles provided on one or more than one substrate members.
  • steps may be added, one or more steps may be removed, or one or more steps may be provided in a different sequence without departing from the scope of the claims herein.
  • Other details of the present method and system can be found throughout the present specific and more particularly below.
  • FIG. 2 is an simplified diagram illustrating a system 200 for forming substrates using a continuous process according to an embodiment of the present invention.
  • the system includes providing at least one substrate members 201.
  • Each of the substrate members includes a plurality of tiles 203 disposed thereon.
  • each of the plurality of tiles include semiconductor substrate such as silicon wafers.
  • the system also includes an inlet port 207 and an outlet port 217. The inlet port and the outlet port may be provided using load lock systems in certain embodiments.
  • the inlet port is provided to prepare and to temporarily store a substrate member including a plurality of tiles before subjecting the plurality of tiles to an implant process in an implant device 213.
  • the implant device is housed in a process chamber 215.
  • a first door 209 is provided to allow loading of a substrate member including a plurality of tiles to the inlet port.
  • a inlet 211 is provided in between the inlet port and process chamber 215.
  • An outlet door 221 is also provided between the process chamber 215 and outlet port 217.
  • a second door 223 allows for removal of substrate members from the outlet port upon completion of an implant process.
  • the implant device provides a scanning implant process.
  • Such implanting device can be a beam line ion implantation equipment manufactured from companies such as Applied Materials, Inc., and others.
  • the implanting device includes an ion implant head 215 to provide for impurities to be implanted in the plurality of tiles.
  • the system also includes a movable track member 219.
  • the movable track member can include rollers, air bearing, or a movable track in certain embodiments.
  • Movable track member 219 provides a spatial movement of the substrate member for the scanning implant process.
  • FIG. 3-10 illustrate a simplified method of forming substrates using a continuous process according to an embodiment of the present invention.
  • N at least one (N, N >2) substrate members are provided.
  • a first substrate member 303 including a first plurality of tiles 305 is transferred into in inlet port 207 through first door 209 (in an open position as shown) while inlet 211 to the implant process device remains closed.
  • the first substrate member including the first plurality of tiles is maintained in an vacuum provided by the inlet port with the first front door closed to allow for a pump down process as shown in Figure 4. Thereafter the first substrate member including the first plurality of tiles is transferred to a process chamber 215 which housed the implant device through the inlet using the movable track member as shown in Figure 5
  • the first plurality of tiles is subjected to an implant process 501.
  • the implant process uses a scanning process in a preferred embodiment.
  • the scanning process is provided by the movable track member, that is, the moving track member is allowed to provide spatial movement while the implant device provides impurities to be implanted in a surface region of the first plurality of tiles.
  • inlet 211 is closed and the inlet port is vented and brought to atmospheric pressure and a second substrate member 701 including a second plurality of tiles 703 is loaded into the inlet port as shown in Figure 7.
  • the second substrate member including the second plurality of tiles is maintained in a vacuum environment provided in the inlet port while awaiting the implant process on the first plurality of tiles to complete.
  • the second substrate member including the second plurality of tiles is transferred to the implant device.
  • the first substrate member including the first plurality of tiles upon completion of the implant process is transferred to a pumped down outlet port 217 by opening outlet door 221 as shown in Figures 9-10. While the second plurality of tiles are being implanted and outlet door 221 is closed, the outlet port can be brought to atmospheric pressure and the first substrate member including the first plurality of tiles can be removed from the outlet port and subjected to further processing.
  • the method continues with other substrate members including plurality of tiles provided. Of course there can be other variations, modifications, and alternatives.
  • a tray device 1100 for performing one or more implant process using a continuous process is illustrated.
  • the tray device can have a length of about one meter by one meter in a specific embodiment.
  • the tray device includes a tray member 1103 housed in a frame member.1101.
  • the frame member includes a plurality of sites 1105.
  • Each of the plurality of sites includes a reusable substrate member 1107 to be implanted.
  • the reusable substrate member may include a silicon bearing material, which can be a donor substrate in certain embodiments.
  • silicon bearing material which can be a donor substrate in certain embodiments.
  • FIG. 1 IA is a simplified diagram showing a tile being subjected to an implant process according to an embodiment of the present invention.
  • the diagram is merely an example and should not unduly limit the claims herein.
  • a shadow mask 1121 is used to limit the implantation to a center region 1123 of the tile by masking a peripheral region 1125 near an edge of the substrate.
  • a rounded edge 1127 is also provided for the tile. The combination of rounded edge 1127 provided for the tile and the shadow mask allows for a subsequent CMP/polish implant damage removal process to remove implant damage in all areas, including the edge areas.
  • the shadow mask can be an amorphous silicon coated frame that can be recoated or replaced periodically according to a specific embodiment of the present invention.
  • the rounded edges can also help in the initiation and propagation of controlled-cleaving processes by allowing for insertion of a blade, a pin, or other mechanical means to impart a cleaving stress.
  • the plurality of sites are provided in an array configuration. As shown in Figure 11, the plurality of sites may be configured as an eight by eight site array. The plurality of sites may be configured in a six by six site array. In a specific embodiment, the plurality of sites is configured to include three by three 300 mm wafers. In an alternative embodiment, the plurality of sites is configured to include five by five 200 mm wafers. In yet an alternative embodiment, the plurality of sites is configured to include six by six 150 mm wafers. Of course there can be other variations, modifications, and alternatives.
  • the tray device can be configured in a suitable orientation for the implant process to minimize defect (e.g., particles or other contaminants) formation on the tile surfaces.
  • a suitable orientation for the implant process to minimize defect (e.g., particles or other contaminants) formation on the tile surfaces.
  • such orientation includes a vertical orientation with respect to an implant shower head 1201.
  • Such orientation may also include an upsidedown orientation as shown in Figure 13, or an angled orientation as shown in Figure 14.
  • the number of substrates and orientation of the tray device depend on the application. One skilled in the art would recognize many variations, modifications, and alternatives.
  • the implant process introduces certain energetic particles through a top surface of a donor substrate to a certain depth, which defines a thickness of semiconductor material from the surface according to a specific embodiment.
  • small mass particles are generally selected to reduce a possibility of damage to the material region according to a preferred embodiment. That is, small mass particles travel easily a substrate member without substantially damaging the material region that the particles traverse through.
  • the smaller mass particles (or energetic particles) can be almost any charged (e.g., positive or negative) and or neutral atoms or molecules, or electrons, or the like.
  • the particles can be neutral and or charged particles including ions such as ions of hydrogen and its isotopes, rare gas ions such as helium and its isotopes, and neon, or others depending upon the embodiment.
  • the particles can also be derived from compounds such as gases, e.g., hydrogen gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.
  • the particles can be any combination of the above particles, and or ions and or molecular species and or atomic species.
  • the particles generally have sufficient kinetic energy to penetrate through the surface to the selected depth underneath the surface.
  • the implant process may be provided using an ion shower system having an ion shower head width of about 450 mm using the scanning process.
  • the implantation process is performed using a specific set of conditions. That is, ion current density as provided by H 3+ can be 20 micro-amps per cm 2 or 1.25xlO 14 H 3+ ions per cm 2 per second or 3.75xlO 14 H + ions per cm 2 per second.
  • a scan time for any surface region through the 450 mm width may take approximately 53 seconds.
  • Implantation temperature ranges from about -20 to about 600 Degrees Celsius, and is preferably less than about 400 Degrees Celsius to prevent a possibility of a substantial quantity of hydrogen ions from diffusing out of the implanted silicon wafer.
  • the hydrogen ions can be selectively introduced into the silicon wafer to the selected depth at an accuracy of about ⁇ 0.03 to ⁇ 0.05 microns.
  • Heating the silicon wafer concurrently with the implantation process may provide certain advantage.
  • One such advantage includes optimizing a subsequent layer transfer process.
  • the silicon wafer may be heated by conduction heating using a hot plate built within the frame assembly.
  • the tiles may be heated using a resistive heating process utilizing the electric resistive nature of the tiles by passing a suitable electric current the through the tiles using two opposite contacts.
  • the type of ion used and process conditions depend upon the application.
  • the implanted particles add stress or reduce fracture energy along a plane parallel to the top surface of the substrate at the selected depth.
  • the energies depend, in part, upon the implantation species and conditions. These particles reduce a fracture energy level of the substrate at the selected depth. This allows for a controlled cleave along the implanted plane at the selected depth. Implantation can occur under conditions such that the energy state of the substrate at all internal locations is insufficient to initiate a non-reversible fracture (i.e., separation or cleaving) in the substrate material.
  • implantation does generally cause a certain amount of defects (e.g., micro-detects) in the substrate that can typically at least partially be repaired by subsequent heat treatment, e.g., thermal annealing or rapid thermal annealing.
  • subsequent heat treatment e.g., thermal annealing or rapid thermal annealing.
  • each of the donor substrate is subjected to a cleaving process using energy provided in a selected portion of a cleave plane according to a specific embodiment.
  • the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free the thickness of material.
  • Alternative cleaving techniques may also be used. These techniques include but not limited to those called a NanocleaveTM process of Silicon Genesis Corporation of San Jose, California, a SmartCutTM process of Soitec SA of France, and an EltraiiTM process of Canon Inc. of Tokyo, Japan, any like processes, and others.
  • each of the donor substrate including the thickness of material may be attached or bonded to a handle substrate to form a bonded substrate structure.
  • the handle substrate can be a silicon wafer.
  • the handle substrate can be a transparent substrate such as quartz or glass.
  • the handle substrate used depends on the application.
  • the handle substrate is bonded to the surface region of the donor substrate.
  • the substrates may be bonded using an EVG bonding tool manufactured by Electronic vision group or other like process for smaller substrate sizes such as 200 mm or 300 mm diameter wafers. Other types of tools such as those manufactured by Karl Suss may also be used.
  • EVG bonding tool manufactured by Electronic vision group or other like process for smaller substrate sizes such as 200 mm or 300 mm diameter wafers.
  • Other types of tools such as those manufactured by Karl Suss may also be used.
  • the bonded substrate structure can be subjected to a thermal treatment according to a specific embodiment.
  • the thermal treatment may be a bake treatment using heating elements such as a thermal plate coupled to the handle substrate in a specific embodiment, hi an alternative embodiment, the thermal treatment may be a bake treatment using heating elements such as a thermal plate coupled to the donor substrate.
  • the thermal treatment provides a temperature gradient through a portion of a thickness of the donor substrate and a portion of the handle substrate. Additionally, the thermal treatment maintains the bonded substrate structures at a predetermined temperature and for a predetermined time.
  • the temperature ranges from about 200 or 250 Degrees Celsius to about 400 Degrees Celsius and is preferably about 350 Degrees Celsius for about one hour or so for a silicon donor substrate and the handle substrate to attach to each other permanently according to the preferred embodiment.
  • the temperature ranges from about 200 or 250 Degrees Celsius to about 400 Degrees Celsius and is preferably about 350 Degrees Celsius for about one hour or so for a silicon donor substrate and the handle substrate to attach to each other permanently according to the preferred embodiment.
  • the substrates are joined or fused together using a low temperature thermal step.
  • the low temperature thermal process generally ensures that the implanted particles do not place excessive stress on the material region, which can produce an uncontrolled cleave action, hi a specific embodiment, the low temperature bonding process occurs by a self-bonding process.
  • a variety of other low temperature techniques can be used to join the donor substrate surface regions to the handle substrate.
  • an electro-static or an anodic bonding technique can be used to join the two substrates together.
  • one or both substrate surface(s) is charged to attract to the other substrate surface.
  • the donor substrate surface can be fused to the handle substrate using a variety of other commonly known techniques. Of course, the technique used depends upon the application.
  • the method includes initiating a cleaving process using energy provided in a selected portion of the cleave plane to detach the thickness of semiconductor material from the donor substrate, while the thickness of material remains joined to the handle substrate.
  • the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free the thickness of material from the donor while the thickness of material remained joined to the handle substrate.
  • Alternative cleaving techniques can also be used. Such techniques include but not limited to those called a
  • the method then removes remaining portion of the donor substrate, which has provided the thickness of material to the handle substrate according to a specific embodiment.
  • the remaining portion of the donor substrate may be reused as another donor substrate according to a preferred embodiment.
  • devices such as photovoltaic devices may be formed in the thickness of material.
  • Such application is described more fully in another application, "Method and Structure for Fabricating Solar Cells Using a Layer Transfer Process,” commonly assigned, in the name of Henley, Francois J. and is listed as U.S. Provisional Serial No. 60/783586 filed 03/17/2006, which is hereby incorporated by reference in its entirety.
  • U.S. Provisional Serial No. 60/783586 filed 03/17/2006, which is hereby incorporated by reference in its entirety.
  • Implant energy is provided at 100 keV.
  • the thickness of silicon material may have a thickness of about 250 mn.
  • a thickening process may be needed to thicken the silicon material to enhance efficiency of solar cells fabricated thereon.
  • the thickening process may be a direct epitaxial process using a high temperature or a low temperature growth process.
  • the thickening process may also include an amorphous silicon or a polysilicon deposited on the thickness of silicon material followed by a liquid phase or a solid phase epitaxial regrowth process.
  • a higher energy implant process may be used to allow for a transfer of a sufficiently thick absorber layer.
  • an implant energy of about 500 keV or higher maybe used.
  • an implant energy of about 500 keV or higher maybe used.
  • the process can be modified by (i) extending the ion shower head to have two concurrent shower heads, each implanting one of the two species in succession, (ii) using one shower head and implanting the first species and the second species successively (using species, energy, and total dose through a modified second scan rate and scanning the substrate a second time or selecting a second implant tile/wafer temperature), and (iii) using a true co-implant process where both species are co-implanted concurrently through the same ion shower head.
  • a true co-implant process where both species are co-implanted concurrently through the same ion shower head.
  • FIG. 15 is a simplified diagram illustrating a master tiled substrate member 1500 according to an alternative embodiment of the present invention.
  • the master tiled substrate member has a plurality of substrates regions 1503 disposed spatially on a larger substrate member 1501.
  • the plurality of substrate regions can be used as a starting material for a plurality of donor substrate regions.
  • the plurality of donor substrate regions can be made of a variety of materials such as silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials.
  • the larger substrate member can be any suitable piece to act as a transfer substrate, which will be described in further detail below.
  • the larger substrate is made of a suitable material that is rigid and can hold each of the donor substrate regions in place.
  • the substrate regions can be made of a single material, multiple materials, or any combination of these, and the like.
  • FIG. 16 is a simplified diagram illustrating yet an alternative tiled substrate member including a handle substrate 1600 according to an alternative embodiment of the present invention.
  • This diagram is merely an illustration that should not unduly limit the scope of the claims herein.
  • the tiled substrates 1605 are provided on handle substrate 1601.
  • Each of the tiled substrates is derived from a layer transfer process from the master tiled substrate, which was described above, and throughout the present specification.
  • the layer transfer process may be a controlled cleaving process from Silicon Genesis
  • a method for fabricating a large area substrate using a tiled approach may be outlined as follows:
  • each of the donor substrate regions may be characterized by a donor substrate thickness and a donor substrate surface region;
  • the above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a large substrate material using a plurality of donor substrates that are manufactured concurrently during a portion of their processing. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specification and more particularly below.
  • FIGs 17 through 21 illustrate a simplified method for manufacturing a tiled substrate according to embodiments of the present invention. These diagrams are merely illustrations that should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives.
  • the method begins by providing a transfer substrate 1703, which has a surface region 1705.
  • the transfer substrate can be made of any suitable material such as a conductor, insulator, or semiconductor, which may be a composite, single layer, or multiple layers, or any combination of these, and the like.
  • the conductor can be a metal such as aluminum, stainless steel, or other metal materials.
  • the insulator can be a glass, a plastic, a quartz, or a ceramic, or combination of these, and the like.
  • the semiconductor can be silicon, germanium, gallium arsenide, silicon-germanium alloy, any Group III/V materials, and others.
  • the transfer substrate can be made of a single homogenous material, or a combination of various layers, depending upon the specific embodiment. Of course, there can be other variations, modifications, and alternatives.
  • the transfer substrate has a plurality of donor substrate regions 1705 on the surface region of the transfer substrate according to a specific embodiment.
  • Each of the donor substrate regions may be characterized by a donor substrate thickness and a donor substrate surface region.
  • the plurality of donor substrate regions can be made of a variety of materials such as silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials.
  • Each of the donor substrate regions is smaller in size then the transfer substrate, which often has at least two times, three times, four times or greater a surface region of any individual donor substrate region.
  • a Generation 3.5 glass size (which is an industrial standard for the flat panel display industry) suitable for flat panel manufacturing is 620 mm X 750 mm and is roughly 7.5 times larger in area than a 300 mm single crystal silicon substrate.
  • the handle substrate may be much larger than Generation 3.5.
  • the area ratio would also be proportionally larger if the round 300 mm substrate would be cut to tile the transfer substrate according to a specific embodiment.
  • each of the donor substrate regions is temporarily (or permanently) transferred onto a spatial surface region of the transfer substrate.
  • the transfer substrate can be handled and used as a larger effective donor substrate according to a specific embodiment.
  • the donor substrate regions can each be oxidized 1707 and then bonded to the surface region of a handle substrate, as shown.
  • the oxidation layer is often formed on a silicon substrate.
  • the oxidation layer can be a natural oxide, thermal oxide, deposited oxide, or any other type of oxide layer, which enhanced bonding the donor substrate regions on the transfer substrate.
  • the method performs a cleaning and /or activating process (e.g., plasma activated process) on surfaces of the donor substrate regions, which have been oxidized, and the transfer substrate according to a specific embodiment.
  • a cleaning and /or activating process e.g., plasma activated process
  • Such plasma activating processes clean and/or activate the surfaces of the substrates.
  • the plasma activated processes are provided using a nitrogen bearing plasma at 20°C - 4O 0 C temperature.
  • the plasma activated processes are preferably carried out in dual frequency plasma activation system manufactured by Silicon Genesis Corporation of San Jose, California. Of course, there can be other variations, modifications, and alternatives.
  • the method introduces a plurality of particles 1800 concurrently through each of the donor substrate surface regions to form a cleave region 1801 provided by the plurality of particles between the donor substrate thickness and the donor substrate surface region.
  • the particles are implanted through surfaces of at least two or more donor substrate regions and most preferably through each of the donor substrate regions simultaneously for efficiency.
  • the method introduces certain energetic particles using an implant process through a top surface of each of the donor substrate regions simultaneously to a selected depth, which defines a thickness of the material region, termed the "thin film" of material.
  • a variety of techniques can be used to implant the energetic particles into the silicon wafer according to a specific embodiment. These techniques include ion implantation using, for example, beam line ion implantation equipment manufactured from companies such as Applied Materials, Inc. and others. Alternatively, implantation occurs using a plasma immersion ion implantation ("PIII”) technique, ion shower, and other non-mass specific techniques. Such techniques can be particularly effective due to its ability to implant large areas from different substrates simultaneously according to a specific embodiment.
  • PIII plasma immersion ion implantation
  • implantation process is carried out in a continuous manner as described above to enhance efficiency and throughput. Combination of such techniques may also be used.
  • Ion implant dose for the non-mass specific techniques should be about 10 percent end to end uniformity across the multiple substrates or better.
  • Ion implant depth uniformity for the non-mass specific techniques should be about 10 percent end to end uniformity across the multiple substrates or better.
  • the cleave region can be formed using a variety of techniques. That is, the cleave region can be formed using any suitable combination of implanted particles, deposited layers, diffused materials, patterned regions, and other techniques. Of course, techniques used depend upon the application, one of ordinary skill in the art would recognize many variations, modifications, and alternatives.
  • smaller mass particles are generally selected to reduce a possibility of damage to the material region according to a preferred embodiment. That is, smaller mass particles easily travel through the substrate material to the selected depth without substantially damaging the material region that the particles traverse through.
  • the smaller mass particles or energetic particles
  • the particles can be almost any charged (e.g., positive or negative) and or neutral atoms or molecules, or electrons, or the like.
  • the particles can be neutral and or charged particles including ions such as ions of hydrogen and its isotopes, rare gas ions such as helium and its isotopes, and neon, or others depending upon the embodiment.
  • the particles can also be derived from compounds such as gases, e.g., hydrogen gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles. Alternatively, the particles can be any combination of the above particles, and or ions and or molecular species and or atomic species. The particles generally have sufficient kinetic energy to penetrate through the surface to the selected depth underneath the surface. [0065] Using hydrogen as the implanted species into the silicon wafer as an example, the implantation process is performed using a specific set of conditions. Implantation dose ranges from about 10 15 to about 10 18 atoms/cm 2 , and preferably the dose is greater than about 10 16 atoms/cm 2 .
  • Implantation energy ranges from about 1 KeV to about 1 MeV , and is generally about 50 KeV.
  • Implantation temperature ranges from about 20 to about 600 Degrees Celsius, and is preferably less than about 400 Degrees Celsius to prevent a possibility of a substantial quantity of hydrogen ions from diffusing out of the implanted silicon wafer and annealing the implanted damage and stress.
  • the hydrogen ions can be selectively introduced into the silicon wafer to the selected depth at an accuracy of about +/- 0.03 to +/-0.05 microns.
  • the type of ion used and process conditions depend upon the application.
  • the implanted particles add stress or reduce fracture energy along a plane parallel to the top surface of the substrate at the selected depth.
  • the energies depend, in part, upon the implantation species and conditions. These particles reduce a fracture energy level of the substrate at the selected depth. This allows for a controlled cleave along the implanted plane at the selected depth. Implantation can occur under conditions such that the energy state of the substrate at all internal locations is insufficient to initiate a nonreversible fracture (i.e., separation or cleaving) in the substrate material.
  • implantation does generally cause a certain amount of defects (e.g., micro- detects) in the substrate that can typically at least partially be repaired by subsequent heat treatment, e.g., thermal annealing or rapid thermal annealing.
  • subsequent heat treatment e.g., thermal annealing or rapid thermal annealing.
  • cleave region is formed using other processes, such as those using a silicon germanium cleave plane developed by Silicon Genesis Corporation of San Jose, California and processes such as the SmartCutTM process of Soitec SA of France, and the EltranTM process of Canon Inc. of Tokyo, Japan, any like processes, and others.
  • processes such as those using a silicon germanium cleave plane developed by Silicon Genesis Corporation of San Jose, California and processes such as the SmartCutTM process of Soitec SA of France, and the EltranTM process of Canon Inc. of Tokyo, Japan, any like processes, and others.
  • the method includes joining each of the donor substrate surface regions to a handle substrate surface region 1901 as illustrated by Figure 19.
  • the handle substrate surface region is provided from a handle substrate 1903.
  • the handle substrate and donor substrate surfaces are each subjected to a cleaning solution to treat surfaces of the substrates to clean the donor substrate surface regions according to a specific embodiment.
  • a solution to clean the substrates and handle substrate can e a mixture of hydrogen peroxide and sulfuric acid and other like solutions according to a specific embodiment.
  • a dryer can dry the donor substrates and handle substrate surfaces to remove any residual liquids, particles, and other impurities from the substrate surfaces.
  • Self bonding occurs by placing surfaces of the cleaned substrates (e.g., donor substrate regions and handle substrate) together after an optional plasma activation process depending upon a specific layer transfer process used. If desired, such plasma activated processes clean and/or activate the surfaces of the substrates.
  • the plasma activated processes are provided, for example, using an oxygen and/or nitrogen bearing plasma at 20°C to 40°C temperature.
  • the plasma activated processes are preferably carried out in dual frequency plasma activation system manufactured by Silicon Genesis Corporation of San Jose, California. Of course, there can be other variations, modifications, and alternatives, which have been described herein, as well as outside of the present specification.
  • each of these substrates is bonded together according to a specific embodiment.
  • the handle substrate has been bonded to the plurality of donor substrate surface regions.
  • the substrates are preferably bonded using an EVG 850 bonding tool manufactured by Electronic Vision Group or other like processes for smaller substrate sizes such as 200 mm or 300 mm diameter wafers. Other types of tools such as those manufactured by Karl Suss may also be used. Of course, there can be other variations, modifications, and alternatives.
  • bonding between the handle substrate and each of the donors is substantially permanent and has good reliability. For larger glass sizes, custom bonding equipment would be desired but are mostly larger versions of those used to bond together semiconductor substrates according to a specific embodiment.
  • the bonded substrate structures are subjected to a bake treatment.
  • the bake treatment maintains the bonded substrate at a predetermined temperature and predetermined time.
  • the temperature ranges from about 200 or 250 Degrees Celsius to about 400 Degrees Celsius and is preferably about 350 Degrees Celsius for about 1 hour or so for silicon donor substrates and the handle substrate to attach themselves to each other permanently according to the preferred embodiment.
  • the substrates are joined or fused together using a low temperature thermal step.
  • the low temperature thermal process generally ensures that the implanted particles do not place excessive stress on the material region, which can produce an uncontrolled cleave action.
  • the low temperature bonding process occurs by a self-bonding process or other like process.
  • an adhesive disposed on either or both surfaces of the substrates, which bond one substrate to another substrate.
  • the adhesive includes an epoxy, polyimide-type materials, and the like.
  • Spin-on-glass layers can be used to bond one substrate surface onto the face of another.
  • These spin-on-glass (“SOG”) materials include, among others, siloxanes or silicates, which are often mixed with alcohol-based solvents or the like. SOG can be a desirable material because of the low temperatures (e.g., 150 to 250 degrees C.) often needed to cure the SOG after it is applied to surfaces of the wafers.
  • a variety of other low temperature techniques can be used to join the donor substrate surface regions to the handle substrate.
  • an electro-static bonding technique can be used to join the two substrates together.
  • one or both substrate surface(s) is charged to attract to the other substrate surface.
  • the donor substrate surfaces can be fused to the handle wafer using a variety of other commonly known techniques. Of course, the technique used depends upon the application.
  • the method includes a step of initiating a controlled cleaving action 1200 within one or more of the donor substrates along a portion of the cleave region.
  • the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free a thickness of material from each of the donor substrate regions attached to a handle substrate.
  • Alternative techniques for cleaving can also be used. Such techniques, include, but are not limited to those using a silicon germanium cleave region from Silicon Genesis Corporation of San Jose, California, the SmartCutTM process of Soitec SA of France, and the EltranTM process of Canon Inc.
  • the method then removes the transfer substrate, which provided each of the thickness of material from each of the donor substrate regions, from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
  • the present method performs other processes on portions of the donor substrate regions, which have been attached to the handle substrate.
  • the method forms one or more devices on one or more portions of the donor substrate portions spatially disposed overlying the handle substrate surface regions.
  • Such devices can include integrated semiconductor devices, photonic and/or optoelectronic devices (e.g., light valves), piezoelectronic devices, microelectromechanical systems ("MEMS"), nano-technology structures, sensors, actuators, solar cells, flat panel display devices (e.g., LCD, AMLCD), biological and biomedical devices, and the like.
  • Such devices can be made using deposition, etching, implantation, photo masking processes, any combination of these, and the like.
  • Additional processes may include a "reuse" process according to a specific embodiment, as illustrated by Figure 21.
  • the initial cleaving process removed a thickness of material from each of the donor substrate regions provided on the transfer substrate.
  • the remaining donor substrate regions may be subjected to a surface smoothing process, oxidized and implanted again to form another cleave region within each of the donor substrate regions.
  • the donor substrate regions which now include the plurality of cleave regions, are subjected to a bonding process to another handle substrate and a cleaving process to form a tiled handle substrate including a plurality of donor substrate portions.
  • a bonding process to another handle substrate and a cleaving process to form a tiled handle substrate including a plurality of donor substrate portions.

Abstract

A method for manufacturing substrates using a continuous plasma immersion process is disclosed. A process chamber (215 having an inlet (207) and outlet (217) has a movable track member (219) contained therein. The moveable track member is used to transport the one or more substrates from the inlet, to the scanning area of chamber (215), and then to the outlet (217). The track member can be rollers, air bearings, belt members and/or a moveable beam member. The substrates are provided with a plurality of ti thereon which are subjected to the scanning implant process provided by device (213). A plurality of substrates with tiles can be sequentially processed by this method to improve throughput. An alternative to the substrates is a reusable transfer substrate member. This member has donor substrate regions which have a substrate thickness and substrate region wherein the regions do not have a definable cleave region.

Description

METHOD AND STRUCTURE FOR FABRICATING MULTIPLE TILE REGIONS ONTO A PLATE USINGA CONTROLLED CLEAVING
PROCESS
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This PCT application claims priority to U.S. Serial Number 11/191,464 filed
7/27/2005 and U.S. Provisional Number (Attorney Docket Number 18419-
020300US) filed 7/25/2006, each of which is commonly assigned and incorporated by reference here.
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] NOT APPLICABLE
REFERENCE TO A "SEQUENCE LISTING3" A TABLE, OR A COMPUTER
PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACT DISK. [0003] NOT APPLICABLE
BACKGROUND OF THE INVENTION [0004] The present invention relates generally to technique including a method and a structure for forming substrates using a large scale implantation process and a tile approach. More particularly, the present method and system provides a method and system using a scanning implant process for the manufacture of photovoltaic cells. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other types of applications such as for three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems ("MEMS"), nano-technology structures, sensors, actuators, integrated circuits, biological and biomedical devices, and the like.
[0005] From the beginning of time, human beings have relied upon the "sun" to derive almost' all useful forms of energy. Such energy comes from petroleum, radiant, wood, and various forms of thermal energy. As merely an example, human being have relied heavily upon petroleum sources such as coal and gas for much of their needs. Unfortunately, such petroleum sources have become depleted and have lead to other problems. As a replacement, in part, solar energy has been proposed to reduce our reliance on petroleum sources. As merely an example, solar energy can be derived from "solar cells" commonly made of silicon.
[0006] The silicon solar cell generates electrical power when exposed to solar radiation from the sun. The radiation interacts with atoms of the silicon and forms electrons and holes that migrate to p-doped and n-doped regions in the silicon body and create voltage differentials and an electric current between the doped regions. Depending upon the application, solar cells have been integrated with concentrating elements to improve efficiency. As an example, solar radiation accumulates and focuses using concentrating elements that direct such radiation to one or more portions of active photovoltaic materials. Although effective, these solar cells still have many limitations.
[0007] As merely an example, solar cells rely upon starting materials such as silicon . Such silicon is often made using either polysilicon and/or single crystal silicon materials. These materials are often difficult to manufacture. Polysilicon cells are often formed by manufacturing polysilicon plates. Although these plates may be formed effectively, they do not possess optimum properties for highly effective solar cells. Single crystal silicon has suitable properties for high grade solar cells. Such single crystal silicon is, however, expensive and is also difficult to use for solar applications in an efficient and cost effective manner. Generally, thin- film solar cells are less expensive by using less silicon material but their amorphous or polycrystalline structure are less efficient than the more expensive bulk silicon cells made from single-crystal silicon substrates.
[0008] These and other limitations can be found throughout the present specification and more particularly below.
BRIEF SUMMARY OF THE INVENTION
[0009] According to the present invention, techniques related to the manufacture of substrates are provided. More particularly, the invention provides a technique including a method and a structure for forming multi-layered substrate structures, using a tiled approach, for the fabrication of devices, for example, on flat panel displays. More particularly, the present method and system provides a method and system using a scanning implant process for the manufacture of photovoltaic cells. In a preferred embodiment, such implanted impurities provide for a thickness of transferable material defined by a cleave plane in a donor substrate. For example, in photovoltaic applications, the thickness of transferable material may be used as a light absorber layer if the thickness of material has a sufficient thickness. The thickness of material can also be used as a single crystal template for a subsequent epitaxial growth process. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other substrates for multi-layered integrated circuit devices, three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, microelectromechanical systems ("MEMS"), nano- technology structures, sensors, actuators, solar cells, biological and biomedical devices, and the like.
[0010] In a specific embodiment, the present invention provides a method for manufacturing substrates using a continuous plasma immersion implant process or ion shower implantation process with varying degree of ion mass selection or non-mass selection. The method includes providing a movable track member. The movable track member is provided in a chamber. The chamber includes an inlet port and an outlet port. In a specific embodiment, the movable track member can include one or more rollers, air bearings, belt member, and/or movable beam member to provide one or more substrates for a scanning process. The method also includes providing a first substrate. The first substrate includes a first plurality of tiles. The method maintains the first substrate including the first plurality of tiles in a vacuum. The method includes transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member. The first plurality of tiles are subjected to a scanning implant process. The method also includes maintaining a second substrate including a second plurality of tiles in the inlet port while the first plurality of tiles are being implanted. The method includes transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member upon completion of the implantation of the first plurality of tiles. The method includes subjecting the second plurality of tiles to an implant process using the scanning implant process.
[0011] In an alternative specific embodiment, the present invention provides a method for forming substrates using a scanning process. The method includes providing a movable track member. The method includes providing a substrate including a plurality of tiles onto the movable track member. The method includes maintaining the substrate in an inlet port provided by a chamber. The method also includes transferring the substrate including the plurality of tiles using the movable track to a vicinity of a first implant process. In a preferred embodiment, the first implant process includes a first scanning process characterized by a first gas, a first voltage, and a plurality of first ion species. The method also includes subjecting the plurality of tiles to a second implant process. In a preferred embodiment, the second implant process includes a second scanning process characterized by a second gas, a second voltage, and a plurality of second ion species. In a specific embodiment, the first implant process and the second implant process provide a thickness of material defined by a cleave plane in each of the plurality of tiles.
[0012] In a specific embodiment of the present invention, a tray device for performing one or more implantation processes is provided. The tray device includes a frame member. The frame member includes a plurality of sites within a spatial region of the frame member. The plurality of sites can be arranged in an array configuration. For example, the array can have a six by six site configuration or an eight by eight configuration, among others. The plurality of sites may also be arranged to hold three by three 300 mm wafers, five by five 200 mm wafers, or six by six 150 mm wafers depending on the application. The tray device includes a tray member housed in the frame member to provide support for a plurality of reusable substrate members. Alternatively, the arrangement can be N x M or others. Ill a preferred embodiment, each of the reusable substrate member can include a substrate material such as a silicon bearing material, a germanium material, Group II/VI materials, Group III/V materials, and others. In a specific embodiment, the tray member is provided in an orientation to prevent defect to form on the reusable substrate members.
[0013] As merely an example, the tray member may be provided in a vertical position, or an upside down position, or in an angled orientation in relation to a direction of implantation (e.g., direction of ions being implanted into the reusable substrates) in certain embodiments. In a specific embodiment, the tray faces a direction away from direct gravitational force, although there may be variations. In a preferred embodiment, the plurality of reusable substrates can be subjected to an scanning implant process. The plurality of reusable substrates may further be subjected to a bond and/or a controlled cleave process, together or separately. In a specific embodiment, each of the plurality of reusable substrate member can have an implant shield surrounding a peripheral region of each of the reusable substrate members. The implant shield may be amorphous silicon or other suitable materials. Accordingly, after cleaving, a cleave surface of the remaining reusable substrate member can be subjected to a polishing process in a specific embodiment. In other embodiments, the polishing process provides a flat surface for the remaining substrate member for further use.
[0014] In an alternative specific embodiment, the present invention provides a scanning implant apparatus using a plurality of tiles or the like to be processed. The apparatus has a movable track member, e.g., chain, mechanical movement device, belt drive and belt. The apparatus has at least a chamber coupled to the movable track member. In a preferred embodiment, the chamber is adapted to house a substrate and maintain the substrate including the plurality of tiles in a vacuum or other determined environment. In a specific embodiment, the apparatus has an implant device provided by at least the chamber coupled to the movable track member. The implant device is provided by subjecting the plurality of tiles to a plurality of particles using a first scanning process performed by movement of the substrate via the movable track member through the implant device provided by at least the chamber.
[0015] In a specific embodiment, the present invention provides a method for forming a plurality of tile structures on a substrate member. The method includes providing a transfer substrate, e.g., glass, semiconductor substrate, quartz, a composite, or other suitable material. In a preferred embodiment, the transfer substrate has a surface region, which has a plurality of donor substrate regions, e.g., silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials, any combination of these, and others. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Again in a preferred embodiment, the method implants a plurality of particles concurrently through each of the donor substrate surface regions to form a cleave region provided by the plurality of particles between a portion of the donor substrate thickness and the donor substrate surface region. The method also includes joining each of the donor substrate surface regions to a handle substrate surface region. The handle substrate surface region is provided from a handle substrate. The method includes removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
[0016] In an alternative specific embodiment, the present invention provides a reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region. That is, the donor substrate thickness exists but cannot be cleaved according to a specific embodiment.
[0017] In an alternative specific embodiment, the present invention provides a method for forming a plurality of tile structures on a substrate member, e.g., glass, quartz. The method includes providing a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions-is spatially disposed overlying the surface region of the transfer substrate. The method includes processing the donor substrate regions provided on the transfer substrate concurrently to form a cleave region between a portion of the donor substrate thickness and the donor substrate surface region for each of the donor substrates. Depending upon the embodiment, the processing can be a thermal process, implanting process, etching process, chemical and/or electro-chemical process, any combination of these, and others, which cause a change to a predetermined portion of the donor substrate thickness to form the cleave region, which becomes cleavable from non-cleavable. The method joins each of the donor substrate surface regions to a handle substrate surface region, which is from a handle substrate. The method also includes removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
[0018] Numerous benefits are achieved over pre-existing techniques using the present invention, hi particular, the present invention uses controlled energy and selected conditions to preferentially cleave a plurality of thin films of material from a plurality of donor substrates, which includes multi-material sandwiched films. This cleaving process selectively removes the plurality of thin films of material from the substrates while preventing a possibility of damage to the film or a remaining portion of the substrate. Additionally, the present method and structures allows for more efficient processing using implantation of a plurality of donor substrates simultaneously according to a specific embodiment. Furthermore, the invention provides a method and structure to form large master donor substrates including a plurality of donor substrate regions using an economical approach and fewer implanting steps, as compared to conventional techniques. Alternative embodiments of the present invention use a continuous mechanism including a movable track member and a tray device to provide an efficient method for scanning process. Such scanning process may include, but not limited to, an implantation process, hi a preferred embodiment, the implantation process provides a thickness of transferable material defined by a cleave plane in a donor substrate. The thickness of transferable material may be further processed to provide a high quality semiconductor material for application such as photovoltaic devices, 3D MEMS, IC packaging, semiconductor devices, and others. In a preferred embodiment, the present method provides for single crystal silicon for highly efficient photovoltaic cells among others, hi an alternative preferred embodiment, embodiments according to the present invention may provide for a seed layer that can further provide for layering of a hetero-structure epitaxial process. The hetero-structure epitaxial process can be used to form thin multi-junction photovoltaic cells, among others. Merely as an example, GaAs and GaInP layers may be deposited heteroepitaxially onto a germanium seed layer, which is a transferred layer formed using an implant process according to an embodiment of the present invention Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits may be described throughout the present specification and more particularly below.
[0019] The present invention achieves these benefits and others in the context of known process technology. However, a further understanding of the nature and advantages of the present invention may be realized by reference to the latter portions of the specification and attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 is a simplified process flow diagram illustrating a method for forming substrates according to an embodiment of present invention.
[0021] Figure 2 is a simplified diagram illustrating a system for a continuous process for forming substrates according to an embodiment of the present invention.
[0022] Figure 3-10 is a simplified diagram illustrating a continuous process for forming substrates according to an embodiment of the present invention.
[0023] Figure 11 is a simplified diagram illustrating a tray device for the continuous process for forming substrates according to an embodiment of the present invention. [0024] Figure 1 IA is a simplified diagram illustrating an implant process according to an embodiment of the present invention.
[0025] Figure 12-14 are simplified diagrams illustrating a tray device for the continuous process for forming substrates according to an embodiment of the present invention.
[0026] Figure 15-21 illustrate a method of forming a layer transferred substrate according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION [0027] According to embodiments of the present invention, techniques including a method and a system for forming substrates using a large scale implantation process are provided. More particularly, the present method and system provide a method and system using a scanning implant process for the manufacture of photovoltaic cells. In a preferred embodiment, such implanted process provide for a thickness of transferable material defined by a cleave plane in a donor substrate. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other types of applications such as for three-dimensional packaging of integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems ("MEMS"), nano-technology structures, sensors, actuators, integrated circuits, biological and biomedical devices, and the like.
[0028] In a specific embodiment, a method of forming substrates in a continuous process may be briefly outline as follow:
1. Provide substrate members, each of the substrate members includes a plurality of tiles (e.g., reusable substrate (e.g., bulk silicon, bulk germanium, other materials) members);
2. Transfer a first substrate member including a first plurality of tiles onto a movable track member in a vacuum environment;
3. Maintain the first substrate member in the vacuum environment
4. Subject the first plurality of tiles to a scanning implant process;
5. Complete the scanning implant process for the first plurality of tiles; 6. Transfer a second substrate member including a second plurality of tiles into the movable track member in the vacuum environment;
7. Subject the second plurality of tiles to the scanning implant process;
8. Remove the first substrate member including the first plurality of tiles from the movable track member upon completion of the scanning implant process;
9. Remove the second substrate member including the second plurality of tiles from the movable track member upon completion of the scanning implant process;
10. Process other substrates as provided; and
11. Perform other steps, as desired.
[0029] The above sequence of steps provide a method of forming substrates using a continuous process according to an embodiment of the present invention. As shown, the method includes using a movable track member to transfer at least one substrate members including a plurality of tiles to be implanted in a scanning process, which occurs while the substrate is being moved spatially across a processing head of an implant device. The movable track member provides a continuous process for implanting a plurality of tiles provided on one or more than one substrate members. Other alternatives can also be provided where steps may be added, one or more steps may be removed, or one or more steps maybe provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specific and more particularly below.
[0030] As shown in Figure 1, the method includes a start steplOl. This diagram is merely an example and should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. The method provides one or more substrate members (step 103). Each of the substrate members includes a plurality of tiles. In a specific embodiment, the substrate member can be a tray device, which will be described in more detail below. Alternatively, the substrate member can be any suitable member and/or device capable of holding more than two tiles, which are used as a material to be implanted. In a specific embodiment, the tray device can include mechanical, electrostatic, or other attachment members to hold the tiles in place. In a specific embodiment, the tiles are large portions of bulk substrate materials that can be repeated used for the manufacture of multilayered substrates using layer transfer techniques. Of course, there can be other variations, modifications, and alternatives.
[0031] In a specific embodiment, the method also provides a movable track in a chamber (step 105). As an example, the movable track can be a belt device or other suitable device that allow for the transportation of the substrate from a first spatial location to a second spatial location and other locations between the first and second locations. The movable track device is suitably designed to be coupled to an implant process, which is chamber based or other suitable device. The movable track member can include rollers, air bearing, belt, and/or a movable beam in certain embodiments.. Of course, there can be other variations, modifications, and alternatives.
[0032] Referring again to Figure 1, the method includes providing a vacuum environment (step 107) within a chamber that houses the movable track member. The method maintains a first substrate member includes a first plurality of tiles in the vacuum (step 109). In a specific embodiment, the first plurality of tiles may include semiconductor substrates such as silicon wafers and the like. The first vacuum may be provided using a load lock system but can others. The method transfers the first substrate member including the first plurality of tiles from an inlet of the chamber to the movable track member (step 111). The method includes subjecting the first plurality of tiles to an implant process (stepl 13).
[0033] In a specific embodiment the implant process can be provided by a plasma immersion implant (PIII) system. Other implant processes can include those using ion shower, ion beam, or other mass separated and/or mass non-separated techniques. Or course, there can be other variations, modifications, and alternatives.
[0034] The method includes maintaining and queuing a second substrate member including a second plurality of tiles in the vacuum environment (step 115) while the first plurality of tiles are being implanted. The method transfers the second substrate member including the second plurality of tiles to the movable track member.(step 117). The method includes subjecting the second plurality of tiles to the implant process (step 121) after completion of implanting the first plurality of tile (step 119). The method includes completing implantation of the second plurality of tiles (step 123) and continues to process other substrates as provided. Of course, there can be other variations, modifications, and alternatives.
[0035] The above sequence of steps provide a method of forming substrates using a continuous process according to an embodiment of the present invention. As shown, the method includes using a movable track member to transfer at least one substrate members including a plurality of tiles to be implanted in a scanning process, which occurs while the substrate is being moved spatially across a processing head of an implant device. The movable track member provides a continuous process for implanting a plurality of tiles provided on one or more than one substrate members. Other alternatives can also be provided where steps may be added, one or more steps may be removed, or one or more steps may be provided in a different sequence without departing from the scope of the claims herein. Other details of the present method and system can be found throughout the present specific and more particularly below.
[0036] Figure 2 is an simplified diagram illustrating a system 200 for forming substrates using a continuous process according to an embodiment of the present invention. This diagram is merely an example and should not unduly limit the scope of the claims herein . One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown in Figure 2, the system includes providing at least one substrate members 201. Each of the substrate members includes a plurality of tiles 203 disposed thereon. In a specific embodiment, each of the plurality of tiles include semiconductor substrate such as silicon wafers. The system also includes an inlet port 207 and an outlet port 217. The inlet port and the outlet port may be provided using load lock systems in certain embodiments. The inlet port is provided to prepare and to temporarily store a substrate member including a plurality of tiles before subjecting the plurality of tiles to an implant process in an implant device 213. As shown, the implant device is housed in a process chamber 215. A first door 209 is provided to allow loading of a substrate member including a plurality of tiles to the inlet port. A inlet 211 is provided in between the inlet port and process chamber 215. An outlet door 221 is also provided between the process chamber 215 and outlet port 217. A second door 223 allows for removal of substrate members from the outlet port upon completion of an implant process. In a specific embodiment, the implant device provides a scanning implant process. Such implanting device can be a beam line ion implantation equipment manufactured from companies such as Applied Materials, Inc., and others. Alternatively implantation can be provided using a plasma immersion ion implantation (PHI) technique, ion shower, and other mass separated and/or non-mass separated techniques, which can be particularly effective for larger surface regions according to a specific embodiment. As shown, the implanting device includes an ion implant head 215 to provide for impurities to be implanted in the plurality of tiles. The system also includes a movable track member 219. The movable track member can include rollers, air bearing, or a movable track in certain embodiments. Movable track member 219 provides a spatial movement of the substrate member for the scanning implant process. Of course there can be other variations, modifications, and alternatives.
[0037] Figure 3-10 illustrate a simplified method of forming substrates using a continuous process according to an embodiment of the present invention. These diagrams are merely examples and should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown in Figure 3, at least one (N, N >2) substrate members are provided. A first substrate member 303 including a first plurality of tiles 305 is transferred into in inlet port 207 through first door 209 (in an open position as shown) while inlet 211 to the implant process device remains closed. The first substrate member including the first plurality of tiles is maintained in an vacuum provided by the inlet port with the first front door closed to allow for a pump down process as shown in Figure 4. Thereafter the first substrate member including the first plurality of tiles is transferred to a process chamber 215 which housed the implant device through the inlet using the movable track member as shown in Figure 5
[0038] Also shown in Figure 5, the first plurality of tiles is subjected to an implant process 501. The implant process uses a scanning process in a preferred embodiment. As shown, the scanning process is provided by the movable track member, that is, the moving track member is allowed to provide spatial movement while the implant device provides impurities to be implanted in a surface region of the first plurality of tiles. Concurrently, inlet 211 is closed and the inlet port is vented and brought to atmospheric pressure and a second substrate member 701 including a second plurality of tiles 703 is loaded into the inlet port as shown in Figure 7. The second substrate member including the second plurality of tiles is maintained in a vacuum environment provided in the inlet port while awaiting the implant process on the first plurality of tiles to complete. As shown in Figure 8-9, the second substrate member including the second plurality of tiles is transferred to the implant device. The first substrate member including the first plurality of tiles, upon completion of the implant process is transferred to a pumped down outlet port 217 by opening outlet door 221 as shown in Figures 9-10. While the second plurality of tiles are being implanted and outlet door 221 is closed, the outlet port can be brought to atmospheric pressure and the first substrate member including the first plurality of tiles can be removed from the outlet port and subjected to further processing. The method continues with other substrate members including plurality of tiles provided. Of course there can be other variations, modifications, and alternatives.
[0039] Referring to Figure 11, a tray device 1100 for performing one or more implant process using a continuous process according to an embodiment of the present invention is illustrated. The tray device can have a length of about one meter by one meter in a specific embodiment. As shown, the tray device includes a tray member 1103 housed in a frame member.1101. The frame member includes a plurality of sites 1105. Each of the plurality of sites includes a reusable substrate member 1107 to be implanted. The reusable substrate member may include a silicon bearing material, which can be a donor substrate in certain embodiments. Of course there can be other variations, modifications, and alternatives.
[0040] Figure 1 IA is a simplified diagram showing a tile being subjected to an implant process according to an embodiment of the present invention. The diagram is merely an example and should not unduly limit the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown ,a shadow mask 1121 is used to limit the implantation to a center region 1123 of the tile by masking a peripheral region 1125 near an edge of the substrate. As shown, a rounded edge 1127 is also provided for the tile. The combination of rounded edge 1127 provided for the tile and the shadow mask allows for a subsequent CMP/polish implant damage removal process to remove implant damage in all areas, including the edge areas. Having a build-up of implant doses in the edge areas would cause blistering, particulation, and other issues that can cause quality problems. The shadow mask can be an amorphous silicon coated frame that can be recoated or replaced periodically according to a specific embodiment of the present invention. The rounded edges can also help in the initiation and propagation of controlled-cleaving processes by allowing for insertion of a blade, a pin, or other mechanical means to impart a cleaving stress.
[0041] In a specific embodiment, the plurality of sites are provided in an array configuration. As shown in Figure 11, the plurality of sites may be configured as an eight by eight site array. The plurality of sites may be configured in a six by six site array. In a specific embodiment, the plurality of sites is configured to include three by three 300 mm wafers. In an alternative embodiment, the plurality of sites is configured to include five by five 200 mm wafers. In yet an alternative embodiment, the plurality of sites is configured to include six by six 150 mm wafers. Of course there can be other variations, modifications, and alternatives.
[0042] The tray device can be configured in a suitable orientation for the implant process to minimize defect (e.g., particles or other contaminants) formation on the tile surfaces. As shown in Figure 12, such orientation includes a vertical orientation with respect to an implant shower head 1201. Such orientation may also include an upsidedown orientation as shown in Figure 13, or an angled orientation as shown in Figure 14. Of course the number of substrates and orientation of the tray device depend on the application. One skilled in the art would recognize many variations, modifications, and alternatives.
[0043] Effectively, the implant process introduces certain energetic particles through a top surface of a donor substrate to a certain depth, which defines a thickness of semiconductor material from the surface according to a specific embodiment. Depending on the application, small mass particles are generally selected to reduce a possibility of damage to the material region according to a preferred embodiment. That is, small mass particles travel easily a substrate member without substantially damaging the material region that the particles traverse through. For example, the smaller mass particles (or energetic particles) can be almost any charged (e.g., positive or negative) and or neutral atoms or molecules, or electrons, or the like. In a specific embodiment, the particles can be neutral and or charged particles including ions such as ions of hydrogen and its isotopes, rare gas ions such as helium and its isotopes, and neon, or others depending upon the embodiment. The particles can also be derived from compounds such as gases, e.g., hydrogen gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles. Alternatively, the particles can be any combination of the above particles, and or ions and or molecular species and or atomic species. The particles generally have sufficient kinetic energy to penetrate through the surface to the selected depth underneath the surface.
[0044] Using hydrogen as the implanted species into a silicon wafer as an example, the implant process may be provided using an ion shower system having an ion shower head width of about 450 mm using the scanning process. The implantation process is performed using a specific set of conditions. That is, ion current density as provided by H3+ can be 20 micro-amps per cm2 or 1.25xlO14 H3+ ions per cm2 per second or 3.75xlO14 H+ ions per cm2 per second. For an implantation dose of about 2x1016 hydrogen atoms per cm2 in the silicon wafer, a scan time for any surface region through the 450 mm width may take approximately 53 seconds. Implantation temperature ranges from about -20 to about 600 Degrees Celsius, and is preferably less than about 400 Degrees Celsius to prevent a possibility of a substantial quantity of hydrogen ions from diffusing out of the implanted silicon wafer. The hydrogen ions can be selectively introduced into the silicon wafer to the selected depth at an accuracy of about ±0.03 to ±0.05 microns. Heating the silicon wafer concurrently with the implantation process may provide certain advantage. One such advantage includes optimizing a subsequent layer transfer process. The silicon wafer may be heated by conduction heating using a hot plate built within the frame assembly. In a specific embodiment, the tiles may be heated using a resistive heating process utilizing the electric resistive nature of the tiles by passing a suitable electric current the through the tiles using two opposite contacts. Of course, the type of ion used and process conditions depend upon the application.
[0045] The implanted particles add stress or reduce fracture energy along a plane parallel to the top surface of the substrate at the selected depth. The energies depend, in part, upon the implantation species and conditions. These particles reduce a fracture energy level of the substrate at the selected depth. This allows for a controlled cleave along the implanted plane at the selected depth. Implantation can occur under conditions such that the energy state of the substrate at all internal locations is insufficient to initiate a non-reversible fracture (i.e., separation or cleaving) in the substrate material. It should be noted, however, that implantation does generally cause a certain amount of defects (e.g., micro-detects) in the substrate that can typically at least partially be repaired by subsequent heat treatment, e.g., thermal annealing or rapid thermal annealing. Of course, there can be other variations, modifications, and alternatives.
[0046] Accordingly, after implantation, each of the donor substrate is subjected to a cleaving process using energy provided in a selected portion of a cleave plane according to a specific embodiment. Depending on the specific embodiment, there can be other variations. For example, the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free the thickness of material. Alternative cleaving techniques may also be used. These techniques include but not limited to those called a Nanocleave™ process of Silicon Genesis Corporation of San Jose, California, a SmartCut™ process of Soitec SA of France, and an Eltraii™ process of Canon Inc. of Tokyo, Japan, any like processes, and others. The method then removes remaining portion of the donor substrate which may also be used as another donor substrate according to a preferred embodiment. [0047] In a specific embodiment, each of the donor substrate including the thickness of material may be attached or bonded to a handle substrate to form a bonded substrate structure. In a specific embodiment, the handle substrate can be a silicon wafer. In an alternative embodiment, the handle substrate can be a transparent substrate such as quartz or glass. Of course the handle substrate used depends on the application. As an example, the handle substrate is bonded to the surface region of the donor substrate. The substrates may be bonded using an EVG bonding tool manufactured by Electronic vision group or other like process for smaller substrate sizes such as 200 mm or 300 mm diameter wafers. Other types of tools such as those manufactured by Karl Suss may also be used. Of course, there can be other variations, modifications, and alternative.
[0048] Accordingly after bonding, the bonded substrate structure can be subjected to a thermal treatment according to a specific embodiment. The thermal treatment may be a bake treatment using heating elements such as a thermal plate coupled to the handle substrate in a specific embodiment, hi an alternative embodiment, the thermal treatment may be a bake treatment using heating elements such as a thermal plate coupled to the donor substrate. The thermal treatment provides a temperature gradient through a portion of a thickness of the donor substrate and a portion of the handle substrate. Additionally, the thermal treatment maintains the bonded substrate structures at a predetermined temperature and for a predetermined time. Preferably, the temperature ranges from about 200 or 250 Degrees Celsius to about 400 Degrees Celsius and is preferably about 350 Degrees Celsius for about one hour or so for a silicon donor substrate and the handle substrate to attach to each other permanently according to the preferred embodiment. Depending upon the specific application, there can be other variations, modifications, and alternatives.
[0049] hi a specific embodiment, the substrates are joined or fused together using a low temperature thermal step. The low temperature thermal process generally ensures that the implanted particles do not place excessive stress on the material region, which can produce an uncontrolled cleave action, hi a specific embodiment, the low temperature bonding process occurs by a self-bonding process.
[0050] Alternatively, a variety of other low temperature techniques can be used to join the donor substrate surface regions to the handle substrate. For instance, an electro-static or an anodic bonding technique can be used to join the two substrates together. In particular, one or both substrate surface(s) is charged to attract to the other substrate surface. Additionally, the donor substrate surface can be fused to the handle substrate using a variety of other commonly known techniques. Of course, the technique used depends upon the application.
[0051] In a specific embodiment, the method includes initiating a cleaving process using energy provided in a selected portion of the cleave plane to detach the thickness of semiconductor material from the donor substrate, while the thickness of material remains joined to the handle substrate. Depending on the specific embodiment, there can be certain other variations. For example, the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free the thickness of material from the donor while the thickness of material remained joined to the handle substrate. Alternative cleaving techniques can also be used. Such techniques include but not limited to those called a
Nanocleave process of Silicon Genesis Corporation of San Jose, California, a SmartCut process of Soitec SA of France, and an Eltran™ process of Canon Inc. of Tokyo, Japan, any like processes, and others. The method then removes remaining portion of the donor substrate, which has provided the thickness of material to the handle substrate according to a specific embodiment. The remaining portion of the donor substrate may be reused as another donor substrate according to a preferred embodiment. Of course there can be other variations, modifications, and alternatives.
[0052] In a specific embodiment, devices such as photovoltaic devices may be formed in the thickness of material. Such application is described more fully in another application, "Method and Structure for Fabricating Solar Cells Using a Layer Transfer Process," commonly assigned, in the name of Henley, Francois J. and is listed as U.S. Provisional Serial No. 60/783586 filed 03/17/2006, which is hereby incorporated by reference in its entirety. Of course, there can be other variations, modifications, and alternatives.
[0053] Again, using implanting H3+ ion as an impurity into a single crystal silicon as an example. Implant energy is provided at 100 keV. The thickness of silicon material may have a thickness of about 250 mn. A thickening process may be needed to thicken the silicon material to enhance efficiency of solar cells fabricated thereon. The thickening process may be a direct epitaxial process using a high temperature or a low temperature growth process. The thickening process may also include an amorphous silicon or a polysilicon deposited on the thickness of silicon material followed by a liquid phase or a solid phase epitaxial regrowth process. Alternatively, a higher energy implant process may be used to allow for a transfer of a sufficiently thick absorber layer. To form a cleave plane using hydrogen and/or helium implant, an implant energy of about 500 keV or higher maybe used. Of course there can be other variations, modifications, and alternatives.
[0054] While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Although the above has been described using a selected sequence of steps, any combination of any elements of steps described as well as others may be used. Additionally, certain steps may be combined and/or eliminated depending upon the embodiment. Furthermore, the particles of hydrogen can be replaced using co-implantation of helium and hydrogen ions to allow for formation of the cleave plane with a modified dose and/or cleaving properties according to alternative embodiments. For example, the process can be modified by (i) extending the ion shower head to have two concurrent shower heads, each implanting one of the two species in succession, (ii) using one shower head and implanting the first species and the second species successively (using species, energy, and total dose through a modified second scan rate and scanning the substrate a second time or selecting a second implant tile/wafer temperature), and (iii) using a true co-implant process where both species are co-implanted concurrently through the same ion shower head. Of course there can be other variations , modifications, and alternatives. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims. Further details of the present method and device can be found throughout the present specification and more particularly below.
[0055] Figure 15 is a simplified diagram illustrating a master tiled substrate member 1500 according to an alternative embodiment of the present invention. This diagram is merely an illustration that should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the master tiled substrate member has a plurality of substrates regions 1503 disposed spatially on a larger substrate member 1501. The plurality of substrate regions can be used as a starting material for a plurality of donor substrate regions. The plurality of donor substrate regions can be made of a variety of materials such as silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials. The larger substrate member can be any suitable piece to act as a transfer substrate, which will be described in further detail below. The larger substrate is made of a suitable material that is rigid and can hold each of the donor substrate regions in place. Depending upon the embodiment, the substrate regions can be made of a single material, multiple materials, or any combination of these, and the like. Of course, there can be other variations, modifications, and alternatives.
[0056] Figure 16 is a simplified diagram illustrating yet an alternative tiled substrate member including a handle substrate 1600 according to an alternative embodiment of the present invention. This diagram is merely an illustration that should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the tiled substrates 1605 are provided on handle substrate 1601. Each of the tiled substrates is derived from a layer transfer process from the master tiled substrate, which was described above, and throughout the present specification. The layer transfer process may be a controlled cleaving process from Silicon Genesis
Corporation of San Jose, California, a process called Eltran™ from Canon, Inc., of Japan and other processes, such as thermal treatment processes called SmartCut™ from Soitec, SA of France. Of course, there can be other variations, modifications, and alternatives. Details of methods according to embodiments of the present invention are provided throughout the present specification and more particularly below.
[0057] A method for fabricating a large area substrate using a tiled approach according to an alternate embodiment of the present invention may be outlined as follows:
1. Provide a transfer substrate, the transfer substrate having a surface region;
2. Spatially disposing a plurality of donor substrate regions on the surface region of the transfer substrate, each of the donor substrate regions may be characterized by a donor substrate thickness and a donor substrate surface region;
3. Implant a plurality of particles concurrently through each of the donor substrate surface regions to form a cleave region provided by the plurality of particles between the donor substrate thickness and the donor substrate surface region;
4. Join each of the donor substrate surface regions to a handle substrate surface region, the handle substrate surface region being provided from a handle substrate; and
5. Initiate a controlled cleaving action within one or more of the donor substrates;
6. Remove the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region; 7. Form one or more devices on one or more portions of the donor substrate portions spatially disposed overlying the handle substrate surface region; and
8. Perform other steps, as desired.
[0058] The above sequence of steps provides a method according to an embodiment of the present invention. As shown, the method uses a combination of steps including a way of forming a large substrate material using a plurality of donor substrates that are manufactured concurrently during a portion of their processing. Other alternatives can also be provided where steps are added, one or more steps are removed, or one or more steps are provided in a different sequence without departing from the scope of the claims herein. Further details of the present method can be found throughout the present specification and more particularly below.
[0059] Figures 17 through 21 illustrate a simplified method for manufacturing a tiled substrate according to embodiments of the present invention. These diagrams are merely illustrations that should not unduly limit the scope of the claims herein. One of ordinary skill in the art would recognize other variations, modifications, and alternatives. As shown, the method begins by providing a transfer substrate 1703, which has a surface region 1705. The transfer substrate can be made of any suitable material such as a conductor, insulator, or semiconductor, which may be a composite, single layer, or multiple layers, or any combination of these, and the like. The conductor can be a metal such as aluminum, stainless steel, or other metal materials. The insulator can be a glass, a plastic, a quartz, or a ceramic, or combination of these, and the like. The semiconductor can be silicon, germanium, gallium arsenide, silicon-germanium alloy, any Group III/V materials, and others. The transfer substrate can be made of a single homogenous material, or a combination of various layers, depending upon the specific embodiment. Of course, there can be other variations, modifications, and alternatives.
[0060] As shown, the transfer substrate has a plurality of donor substrate regions 1705 on the surface region of the transfer substrate according to a specific embodiment. Each of the donor substrate regions may be characterized by a donor substrate thickness and a donor substrate surface region. The plurality of donor substrate regions can be made of a variety of materials such as silicon, germanium, gallium arsenide, gallium nitride, silicon carbide, other Group III/V materials, Group II/VI materials. Each of the donor substrate regions is smaller in size then the transfer substrate, which often has at least two times, three times, four times or greater a surface region of any individual donor substrate region. For example, a Generation 3.5 glass size (which is an industrial standard for the flat panel display industry) suitable for flat panel manufacturing is 620 mm X 750 mm and is roughly 7.5 times larger in area than a 300 mm single crystal silicon substrate. Alternatively, the handle substrate may be much larger than Generation 3.5. The area ratio would also be proportionally larger if the round 300 mm substrate would be cut to tile the transfer substrate according to a specific embodiment.
[0061] In a preferred embodiment, each of the donor substrate regions is temporarily (or permanently) transferred onto a spatial surface region of the transfer substrate. Once this bonding occurs, the transfer substrate can be handled and used as a larger effective donor substrate according to a specific embodiment. The donor substrate regions can each be oxidized 1707 and then bonded to the surface region of a handle substrate, as shown. As merely an example, the oxidation layer is often formed on a silicon substrate. The oxidation layer can be a natural oxide, thermal oxide, deposited oxide, or any other type of oxide layer, which enhanced bonding the donor substrate regions on the transfer substrate. In a specific embodiment, the method performs a cleaning and /or activating process (e.g., plasma activated process) on surfaces of the donor substrate regions, which have been oxidized, and the transfer substrate according to a specific embodiment. Such plasma activating processes clean and/or activate the surfaces of the substrates. The plasma activated processes are provided using a nitrogen bearing plasma at 20°C - 4O0C temperature. The plasma activated processes are preferably carried out in dual frequency plasma activation system manufactured by Silicon Genesis Corporation of San Jose, California. Of course, there can be other variations, modifications, and alternatives.
[0062] Referring now to Figure 18, the method introduces a plurality of particles 1800 concurrently through each of the donor substrate surface regions to form a cleave region 1801 provided by the plurality of particles between the donor substrate thickness and the donor substrate surface region. In a preferred embodiment, the particles are implanted through surfaces of at least two or more donor substrate regions and most preferably through each of the donor substrate regions simultaneously for efficiency.
[0063] Referring again to Figure 18, the method introduces certain energetic particles using an implant process through a top surface of each of the donor substrate regions simultaneously to a selected depth, which defines a thickness of the material region, termed the "thin film" of material. A variety of techniques can be used to implant the energetic particles into the silicon wafer according to a specific embodiment. These techniques include ion implantation using, for example, beam line ion implantation equipment manufactured from companies such as Applied Materials, Inc. and others. Alternatively, implantation occurs using a plasma immersion ion implantation ("PIII") technique, ion shower, and other non-mass specific techniques. Such techniques can be particularly effective due to its ability to implant large areas from different substrates simultaneously according to a specific embodiment. Preferably, implantation process is carried out in a continuous manner as described above to enhance efficiency and throughput. Combination of such techniques may also be used. Ion implant dose for the non-mass specific techniques should be about 10 percent end to end uniformity across the multiple substrates or better. Ion implant depth uniformity for the non-mass specific techniques should be about 10 percent end to end uniformity across the multiple substrates or better. Depending upon the embodiment, the cleave region can be formed using a variety of techniques. That is, the cleave region can be formed using any suitable combination of implanted particles, deposited layers, diffused materials, patterned regions, and other techniques. Of course, techniques used depend upon the application, one of ordinary skill in the art would recognize many variations, modifications, and alternatives.
[0064] Depending upon the application, smaller mass particles are generally selected to reduce a possibility of damage to the material region according to a preferred embodiment. That is, smaller mass particles easily travel through the substrate material to the selected depth without substantially damaging the material region that the particles traverse through. For example, the smaller mass particles (or energetic particles) can be almost any charged (e.g., positive or negative) and or neutral atoms or molecules, or electrons, or the like. In a specific embodiment, the particles can be neutral and or charged particles including ions such as ions of hydrogen and its isotopes, rare gas ions such as helium and its isotopes, and neon, or others depending upon the embodiment. The particles can also be derived from compounds such as gases, e.g., hydrogen gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles. Alternatively, the particles can be any combination of the above particles, and or ions and or molecular species and or atomic species. The particles generally have sufficient kinetic energy to penetrate through the surface to the selected depth underneath the surface. [0065] Using hydrogen as the implanted species into the silicon wafer as an example, the implantation process is performed using a specific set of conditions. Implantation dose ranges from about 1015 to about 1018 atoms/cm2, and preferably the dose is greater than about 1016 atoms/cm2. Implantation energy ranges from about 1 KeV to about 1 MeV , and is generally about 50 KeV. Implantation temperature ranges from about 20 to about 600 Degrees Celsius, and is preferably less than about 400 Degrees Celsius to prevent a possibility of a substantial quantity of hydrogen ions from diffusing out of the implanted silicon wafer and annealing the implanted damage and stress. The hydrogen ions can be selectively introduced into the silicon wafer to the selected depth at an accuracy of about +/- 0.03 to +/-0.05 microns. Of course, the type of ion used and process conditions depend upon the application.
[0066] Effectively, the implanted particles add stress or reduce fracture energy along a plane parallel to the top surface of the substrate at the selected depth. The energies depend, in part, upon the implantation species and conditions. These particles reduce a fracture energy level of the substrate at the selected depth. This allows for a controlled cleave along the implanted plane at the selected depth. Implantation can occur under conditions such that the energy state of the substrate at all internal locations is insufficient to initiate a nonreversible fracture (i.e., separation or cleaving) in the substrate material. It should be noted, however, that implantation does generally cause a certain amount of defects (e.g., micro- detects) in the substrate that can typically at least partially be repaired by subsequent heat treatment, e.g., thermal annealing or rapid thermal annealing. Of course, there can be other variations, modifications, and alternatives.
[0067] Depending upon the embodiment, there may be other techniques for forming a cleave region and/or cleave layer. As merely an example, such cleave region is formed using other processes, such as those using a silicon germanium cleave plane developed by Silicon Genesis Corporation of San Jose, California and processes such as the SmartCut™ process of Soitec SA of France, and the Eltran™ process of Canon Inc. of Tokyo, Japan, any like processes, and others. Of course, there may be other variations, modifications, and alternatives.
[0068] In a specific embodiment, the method includes joining each of the donor substrate surface regions to a handle substrate surface region 1901 as illustrated by Figure 19. As shown, the handle substrate surface region is provided from a handle substrate 1903. Before joining, the handle substrate and donor substrate surfaces are each subjected to a cleaning solution to treat surfaces of the substrates to clean the donor substrate surface regions according to a specific embodiment. An example of a solution to clean the substrates and handle substrate can e a mixture of hydrogen peroxide and sulfuric acid and other like solutions according to a specific embodiment. A dryer can dry the donor substrates and handle substrate surfaces to remove any residual liquids, particles, and other impurities from the substrate surfaces. Self bonding occurs by placing surfaces of the cleaned substrates (e.g., donor substrate regions and handle substrate) together after an optional plasma activation process depending upon a specific layer transfer process used. If desired, such plasma activated processes clean and/or activate the surfaces of the substrates. The plasma activated processes are provided, for example, using an oxygen and/or nitrogen bearing plasma at 20°C to 40°C temperature. The plasma activated processes are preferably carried out in dual frequency plasma activation system manufactured by Silicon Genesis Corporation of San Jose, California. Of course, there can be other variations, modifications, and alternatives, which have been described herein, as well as outside of the present specification.
[0069] Thereafter, each of these substrates is bonded together according to a specific embodiment. As shown, the handle substrate has been bonded to the plurality of donor substrate surface regions. The substrates are preferably bonded using an EVG 850 bonding tool manufactured by Electronic Vision Group or other like processes for smaller substrate sizes such as 200 mm or 300 mm diameter wafers. Other types of tools such as those manufactured by Karl Suss may also be used. Of course, there can be other variations, modifications, and alternatives. Preferably, bonding between the handle substrate and each of the donors is substantially permanent and has good reliability. For larger glass sizes, custom bonding equipment would be desired but are mostly larger versions of those used to bond together semiconductor substrates according to a specific embodiment.
[0070] Accordingly after bonding, the bonded substrate structures are subjected to a bake treatment. The bake treatment maintains the bonded substrate at a predetermined temperature and predetermined time. Preferably, the temperature ranges from about 200 or 250 Degrees Celsius to about 400 Degrees Celsius and is preferably about 350 Degrees Celsius for about 1 hour or so for silicon donor substrates and the handle substrate to attach themselves to each other permanently according to the preferred embodiment. Depending upon the specific application, there can be other variations, modifications, and alternatives. [0071] In a specific embodiment, the substrates are joined or fused together using a low temperature thermal step. The low temperature thermal process generally ensures that the implanted particles do not place excessive stress on the material region, which can produce an uncontrolled cleave action. In a specific embodiment, the low temperature bonding process occurs by a self-bonding process or other like process. Alternatively, an adhesive disposed on either or both surfaces of the substrates, which bond one substrate to another substrate. In a specific embodiment, the adhesive includes an epoxy, polyimide-type materials, and the like. Spin-on-glass layers can be used to bond one substrate surface onto the face of another. These spin-on-glass ("SOG") materials include, among others, siloxanes or silicates, which are often mixed with alcohol-based solvents or the like. SOG can be a desirable material because of the low temperatures (e.g., 150 to 250 degrees C.) often needed to cure the SOG after it is applied to surfaces of the wafers.
[0072] Alternatively, a variety of other low temperature techniques can be used to join the donor substrate surface regions to the handle substrate. For instance, an electro-static bonding technique can be used to join the two substrates together. In particular, one or both substrate surface(s) is charged to attract to the other substrate surface. Additionally, the donor substrate surfaces can be fused to the handle wafer using a variety of other commonly known techniques. Of course, the technique used depends upon the application.
[0073] Referring to Figure 20, the method includes a step of initiating a controlled cleaving action 1200 within one or more of the donor substrates along a portion of the cleave region. Depending upon the specific embodiment, there can be certain variations. For example, the cleaving process can be a controlled cleaving process using a propagating cleave front to selectively free a thickness of material from each of the donor substrate regions attached to a handle substrate. Alternative techniques for cleaving can also be used. Such techniques, include, but are not limited to those using a silicon germanium cleave region from Silicon Genesis Corporation of San Jose, California, the SmartCut™ process of Soitec SA of France, and the Eltran™ process of Canon Inc. of Tokyo, Japan, any like processes, and others. The method then removes the transfer substrate, which provided each of the thickness of material from each of the donor substrate regions, from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
[0074] Next, the present method performs other processes on portions of the donor substrate regions, which have been attached to the handle substrate. The method forms one or more devices on one or more portions of the donor substrate portions spatially disposed overlying the handle substrate surface regions. Such devices can include integrated semiconductor devices, photonic and/or optoelectronic devices (e.g., light valves), piezoelectronic devices, microelectromechanical systems ("MEMS"), nano-technology structures, sensors, actuators, solar cells, flat panel display devices (e.g., LCD, AMLCD), biological and biomedical devices, and the like. Such devices can be made using deposition, etching, implantation, photo masking processes, any combination of these, and the like. Of course, there can be other variations, modifications, and alternatives. Additionally, other steps can also be formed, as desired.
[0075] Additional processes may include a "reuse" process according to a specific embodiment, as illustrated by Figure 21. As shown, the initial cleaving process removed a thickness of material from each of the donor substrate regions provided on the transfer substrate. The remaining donor substrate regions may be subjected to a surface smoothing process, oxidized and implanted again to form another cleave region within each of the donor substrate regions. The donor substrate regions, which now include the plurality of cleave regions, are subjected to a bonding process to another handle substrate and a cleaving process to form a tiled handle substrate including a plurality of donor substrate portions. Of course, there can be other variations, modifications, and alternatives.
[0076] While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims.

Claims

WHAT IS CLAIMED IS:
L A method for forming substrates using a continuous implant process, the method comprising: providing a movable track member, the movable track member being provided within a chamber, the chamber including an inlet port, an outlet port and a process chamber; maintaining a first substrate including a first plurality of tiles in the inlet port, the chamber being maintained in a vacuum environment; transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member; subjecting the first plurality of tiles to a first implant process using a scanning implant process, while the chamber including the first plurality of tiles being maintained in a vacuum environment; maintaining a second substrate including a second plurality of tiles in the inlet port, the inlet port being maintained in a vacuum environment while the first plurality of tiles are being implanted; transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member; and subjecting the second plurality of tiles to a second implant process using the scanning implant process.
2. The method of claim 1 wherein the inlet port and the outlet port are provided by load lock systems coupled to the chamber.
3. The method of claim 1 wherein the scanning implant process forms a thickness of material defined by a cleave plane within a thickness of each of the tiles on the first substrate.
4. The method of claim 1 wherein the scanning implant process forms a thickness of material defined by a cleave plane within a thickness of each of the tiles on the second substrate.
5. The method of claim 1 wherein the first plurality of tiles and the second plurality of tiles are respectively subjected to a controlled cleaving process after the scanning implant process.
6. The method of claim 1 wherein the scanning implant process is provided by an implantation device.
7. The method of claim 1 wherein the scanning implant process is provided by spatial movement of the first substrate by the movable track member.
8. The method of claim 1 wherein the first substrate comprises a rray device.
9. The method of claim 1 wherein the movable track member includes a plurality of rollers, air bearing, or movable track.
10. The method of claim 1 wherein the scanning implant process includes a co-implant of hydrogen and helium species.
11. The method of claim 1 wherein the scanning implant process includes a hydrogen implant process and a helium implant process.
12. The method of claim 1 wherein the scanning implant process includes a first helium implant process and a hydrogen implant process.
13. The method of claim 1 wherein the scanning implant process comprises a high energy implant process to cause formation of a thickness of material defined by a cleave plane within a thickness of each of the tiles, the thickness of material being at least 500 nm as provided by the high energy implant process
14. The method of claim 1 wherein the scanning implant process comprises a first implant process and a second implant process.
15. The method of claim 1 further comprising maintaining a mask to shield a peripheral region of each of the plurality of tiles.
16. The method of claim 1 further comprising subjecting each of the tiles to a thermal process to heat each of the tiles during the scanning implant process.
17. The method of claim 1 further comprising subjecting each of the tiles to a thermal process to heat each of the tiles during the scanning implant process, the thermal process being selected from conduction, infra-red radiation, convection, or combination of these.
18. The method of claim 1 wherein the chamber is coupled to another chamber for implanting species into each of the tiles.
19. The method of claim 1 wherein the first plurality of tiles and the second plurality of tiles are respectively subjected to a thermal separation process after the scanning implant process.
20. The method of claim 1 wherein the first plurality of tiles and the second plurality of tiles are respectively subjected to a porous silicon separation process after the scanning implant process.
21. A method for forming substrates using a scanning process, the method comprising: providing a movable track member; providing a substrate including a plurality of tiles onto the movable track; maintaining the substrate including the plurality of tiles in a vacuum, the vacuum being provided by a chamber; transferring the substrate including the plurality of tiles using the movable track within a vicinity of a first implant process; subjecting the plurality of tiles to the first implant process using a first scanning process; transferring the substrate including the plurality of tiles using the movable track within a vicinity of a second implant process; and subjecting the plurality of tiles to the second implant process using a second scanning process.
22. The method of claim 21 wherein each of the plurality of tiles is a reusable substrate member.
23. The method of claim 21 wherein the first implant process and the second implant process provide a thickness of material defined by a cleave plane in a thickness of the reusable substrate member.
24. The method of claim 21 wherein each of the reusable substrate member is further subjected to a controlled cleaving process after the first implant process
5 and the second implant process.
25. The method of claim 21 wherein the first scanning process is provided by an implantation device.
26. The method of claim 21 wherein the first scanning process is characterized by a gas, a voltage, and ion species
27.. The method of claim 21 wherein the second scanning process is characterized by a gas, a voltage, and ion species
28. The method of claim 21 wherein the second scanning process is provided by the movable track member.
29. The method of claim 21 wherein the second implant process is provided by the implant device.
30. The method of claim 21 wherein the second implant process is provided by a second implant device.
31. The method of claim 21 wherein the movable track member includes a plurality of rollers, a plurality of air bearings, or a movable track.
32 . The method of claim 21 wherein the movable track is provided in-line.
33. The method of claim 21 wherein the movable track is provided in a robot configuration
34. The method of claim 21 wherein each of the plurality tiles has a surrounding implant shield.
35. The method of claim 21 wherein each of the plurality tiles has an exclusion region of about one cm in a peripheral region of each of the tiles.
36. The method of claim 21 further comprising performing a controlled cleaving process to remove a thickness of material from at least one of the tiles and form a remaining cleaved surface region on the tile and performing a polishing process to the cleaved surface region to form a flattened surface region.
37. The method of claim 34 wherein the surrounding implant shield is amorphous silicon or silicon or silicon germanium.
38. The method of claim 21 wherein the implant device is configured to include a showerhead, the shower head has a width of about 450 mm.
39. The method of claim 21 wherein the ion species comprises molecular ion H3+, the molecular ion provides a current density of 2OxIO"6 amps per cm2 or 1.25xlO14 H3+ions per cm2 per second or 3.75xlO14 H+ ions per cm2 per second.
40. The method of claim 21 wherein the implant process provides a dose of 2.OxIO16 hydrogen atoms per cm2.
41. A tray device for performing one or more implantation processes, the tray device comprising: a frame member, the frame member comprising a plurality of sites; a plurality of reusable substrate members provided respectively on the plurality of sites, and a tray member housed in the frame member to provide support for the plurality of reusable substrate members.
42. The tray device of claim 41 wherein the tray member is provided in a vertical orientation in relation to gravity.
43. The tray device of claim 41 wherein the tray member is provided in an upsidedown orientation in relation to gravity.
44. The tray device of claim 41 wherein the tray member is provided in an angled orientation.
45. The tray device of claim 41 wherein the tray member is provided in an orientation to prevent defect formation on the plurality of reusable substrate members.
46. The tray device of claim 41 wherein each of the reusable substrate members has a dimension of about 125 mm by about 125 mm.
47. The tray device of claim 41 wherein each of the reusable substrate members comprises a silicon bearing material.
48. The tray device of claim 41 wherein the plurality of sites is arranged as an array having a six by six site configuration.
49. The tray device of claim 41 wherein the plurality of sites is arranged as an array having an eight by eight site configuration.
50. The tray device of claim 41 wherein the plurality of sites is arranged as an array to hold three by three 300 mm wafers.
51. The tray device of claim 41 wherein the plurality of sites is arranged as an array to hold five by five 200 mm wafers.
52. The tray device of claim 41 wherein the plurality of sites is arranged as an array to hold six by six 150 mm wafers.
53. The tray device of claim 41 wherein the plurality of reusable substrates are subjected to a bond process and/or a cleave process, the bond process and/or the cleave processes is performed on the plurality of reusable substrates together or separately.
54. The tray device of claim 41 wherein the tray member has a dimension of about one meter by one meter.
55. The tray device of claim 41 wherein each of the reusable substrate member has a surrounding implant shield.
56. The tray device of claim 41 wherein each of the reusable substrate member has an exclusion region in a peripheral region of each of the reusable substrate member, the exclusion region has a dimension of about one cm and less.
57. The tray device of claim 41 wherein each of the reusable substrate member is further subjected to a controlled cleaving process to remove a thickness of material from at least one of the reusable substrate member and form a remaining cleaved surface region on the reusable substrate member, the remaining cleaved surface region is subjected to a polishing process to form a flattened surface region.
1 58. The tray device of claim 55 wherein the implant shield is amorphous silicon or other suitable material.
1.
59. A method for forming a plurality of tile structures on a substrate member, the method comprising:
3 providing a transfer substrate, the transfer substrate having a surface region, the surface region comprising a plurality of donor substrate regions, each of the donor
5 substrate regions being characterized by a donor substrate thickness and a donor substrate
6 surface region, each of the donor substrate regions being spatially disposed overlying the
7 surface region of the transfer substrate;
8 implanting a plurality of particles concurrently through two or more of the donor substrate surface regions to form a cleave region provided by the plurality of particles between a portion of the donor substrate thickness and the donor substrate surface region for 1 the two or more donor substrate regions; and joining each of the donor substrate surface regions to a handle substrate surface region, the handle substrate surface region being provided from a handle substrate; and removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
1 60. The method of claim 59 wherein the transfer substrate is composed of a single layer.
1 61. The method of claim 59 wherein the transfer substrate comprises a plurality of layers.
62. The method of claim 59 wherein the transfer substrate comprises a silicon bearing material.
63. The method of claim 59 wherein each of the plurality of donor substrate regions comprises a single crystal silicon bearing material.
64. The method of claim 59 wherein the removing comprises, for each of the donor substrate regions, cleaving the cleave region to remove a thickness of donor substrate material between the cleave region and the donor substrate surface region.
65. The method of claim 64 wherein the cleaving is characterized by a controlled cleaving action.
66. The method of claim 59 wherein the handle substrate comprises a glass substrate.
67. The method of claim 59 wherein the handle substrate comprises a quartz plate.
68. The method of claim 59 wherein the handle substrate is characterized by a first length and a first width.
69. The method of claim 59 wherein the removing forms a resulting handle substrate comprising the plurality of donor substrate portions spatially disposed on the handle substrate.
70. The method of claim 59 wherein, for each of the donor substrate regions, the cleave region comprises an implanted region and a deposited region.
71. The method of claim 59 wherein, for each of the donor substrate regions, the cleave region comprises an implanted region, the implanted region comprising a plurality of hydrogen species.
72. The method of claim 59 wherein, for each of the donor substrate regions, the cleave region comprises a plurality of particles therein.
73. The method of claim 59 wherein the joining comprises bonding each of the donor substrate surface regions to the handle substrate surface region.
74. A method for forming a plurality of tile structures on a substrate member, the method comprising: providing a transfer substrate, the transfer substrate having a surface region, the surface region comprising a plurality of donor substrate regions, each of the donor substrate regions being characterized by a donor substrate thickness and a donor substrate surface region, each of the donor substrate regions being spatially disposed overlying the surface region of the transfer substrate; processing the donor substrate regions provided on the transfer substrate concurrently to form a cleave region between a portion of the donor substrate thickness and the donor substrate surface region for each of the donor substrates; and joining each of the donor substrate surface regions to a handle substrate surface region, the handle substrate surface region being provided from a handle substrate; and removing the transfer substrate from the handle substrate to form a plurality of donor substrate portions spatially disposed overlying the handle substrate surface region.
75. The method of claim 74 wherein the processing comprises an implanting process.
76. The method of claim 74 wherein the processing comprises a thermal process.
77. The method of claim 74 wherein the processing causes a change in a portion of the donor substrate thickness to form the cleave region, the cleave region comprising a deposited material.
78 . A reusable transfer substrate member comprising: a transfer substrate, the transfer substrate having a surface region, the surface region comprising a plurality of donor substrate regions, each of the donor substrate regions being characterized by a donor substrate thickness and a donor substrate surface region, each of the donor substrate regions being spatially disposed overlying the surface region of the transfer substrate, each of the donor substrate regions having the donor substrate thickness without a definable cleave region.
79. The reusable transfer substrate member of claim 78 wherein the transfer substrate is composed of a single layer.
80. The reusable transfer substrate member of claim 78 wherein the transfer substrate comprises a plurality of layers.
81. The reusable transfer substrate member of claim 78 wherein the transfer substrate comprises a silicon bearing material.
82. The reusable transfer substrate member of claim 78 wherein each of the plurality of donor substrate regions comprises a single crystal silicon bearing material.
83. The reusable transfer substrate member of claim 78 wherein each of the donor substrate regions comprises a cleave region defining a donor substrate material between the cleave region and the donor substrate surface region.
84. The reusable transfer substrate member of claim 83 wherein, for each of the donor substrate regions, the cleave region comprises an implanted region.
85. The reusable transfer substrate member of claim 78 wherein, for each of the donor substrate regions, the cleave region comprises an implanted region, the implanted region comprising hydrogen bearing particles.
86. The reusable transfer substrate member of claim 78 wherein, for each of the donor substrate regions, the cleave region comprises a plurality of particles therein.
PCT/US2006/029378 2005-07-27 2006-07-26 Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process WO2007014320A2 (en)

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US60/833,289 2006-07-25

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JP2009507363A (en) 2009-02-19

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