WO2007005862A1 - Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods - Google Patents
Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods Download PDFInfo
- Publication number
- WO2007005862A1 WO2007005862A1 PCT/US2006/026029 US2006026029W WO2007005862A1 WO 2007005862 A1 WO2007005862 A1 WO 2007005862A1 US 2006026029 W US2006026029 W US 2006026029W WO 2007005862 A1 WO2007005862 A1 WO 2007005862A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- layer
- superlattice
- group
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims description 19
- 239000012212 insulator Substances 0.000 title description 4
- 239000010410 layer Substances 0.000 claims abstract description 131
- 239000002356 single layer Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- CSJDCSCTVDEHRN-UHFFFAOYSA-N methane;molecular oxygen Chemical compound C.O=O CSJDCSCTVDEHRN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 230000037230 mobility Effects 0.000 description 16
- 239000002800 charge carrier Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003775 Density Functional Theory Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 241001496863 Candelaria Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002099 adlayer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007734 materials engineering Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
Definitions
- the application discloses that material parameters, for example, the location of band minima, effective mass, etc, can be tailored to yield new aperiodic materials with desirable band-structure characteristics.
- Other parameters such as electrical conductivity, thermal conductivity and dielectric permittivity or magnetic permeability are disclosed as also possible to be designed into the material .
- the semiconductor layer and the base semiconductor monolayers may each comprise a same semiconductor material.
- the substrate, the semiconductor layer, and the base semiconductor monolayers may each comprise silicon, and the insulating layer may comprise silicon oxide.
- the semiconductor layer may have a thickness of less than about 10 nm, for example .
- the semiconductor device may further include spaced-apart source and drain regions laterally adjacent the superlattice to define a channel therein, and a gate overlying the superlattice.
- a contact layer may be on at least one of the source and drain regions.
- each non- semiconductor layer may be a single monolayer thick.
- each base semiconductor portion may be less than eight monolayers thick.
- the illustrated SOI MOSFET 20 includes a silicon substrate 21, an insulating layer (e.g., silicon oxide on a high-K dielectric) 29 on the substrate, and a semiconductor (i.e., silicon) layer 39 on a face of the insulating layer opposite the substrate.
- the semiconductor layer 39 may be a relatively thin monocrystalline silicon layer having a thickness of less than about 10 nm, and, more preferably, about 5 nm.
- the layer 39 advantageously acts as a "substrate" for the formation of the superlattice 25, as will be described further below.
- the energy band- modifying layer 50 provided by a single monolayer is also meant to include a monolayer wherein not all of the possible sites are occupied.
- a 4/1 repeating structure is illustrated for silicon as the base semiconductor material , and oxygen as the energy band-modifying material. Only half of the possible sites for oxygen are occupied.
- FIG. 4 another embodiment of a superlattice 25' in accordance with the invention having different properties is now described.
- a repeating pattern of 3/1/5/1 is illustrated. More particularly, the lowest base semiconductor portion 46a' has three monolayers, and the second lowest base semiconductor portion 46b' has five monolayers. This pattern repeats throughout the superlattice 25' .
- the energy band-modifying layers 50' may each include a single monolayer.
- the enhancement of charge carrier mobility is independent of orientation in the plane of the layers.
- insulator-on- substrate device that may be produced using the above described techniques is a memory device, such as the one described in a co-pending application entitled SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL, U.S. Patent Application Serial No. 11/381,787, which is assigned to the present Assignee and is hereby incorporated herein in its entirety by reference.
- Other potential insulator-on- substrate devices include optical devices, such as those disclosed in U.S. Patent. App. No.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002612243A CA2612243A1 (en) | 2005-06-30 | 2006-06-30 | Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods |
EP06786244A EP1920466A1 (en) | 2005-06-30 | 2006-06-30 | Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods |
AU2006265096A AU2006265096A1 (en) | 2005-06-30 | 2006-06-30 | Semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer and associated methods |
JP2008519701A JP2008544581A (en) | 2005-06-30 | 2006-06-30 | Semiconductor device having a semiconductor-on-insulator (SOI) structure and including a superlattice on a thin semiconductor layer, and a method of manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69558805P | 2005-06-30 | 2005-06-30 | |
US60/695,588 | 2005-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007005862A1 true WO2007005862A1 (en) | 2007-01-11 |
Family
ID=37068469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/026029 WO2007005862A1 (en) | 2005-06-30 | 2006-06-30 | Semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer and associated methods |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1920466A1 (en) |
JP (1) | JP2008544581A (en) |
CN (1) | CN101278400A (en) |
AU (1) | AU2006265096A1 (en) |
CA (1) | CA2612243A1 (en) |
TW (2) | TWI311373B (en) |
WO (1) | WO2007005862A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019199923A1 (en) * | 2018-04-12 | 2019-10-17 | Atomera Incorporated | Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9954154B2 (en) | 2012-04-10 | 2018-04-24 | Ud Holdings, Llc | Superlattice quantum well thermoelectric generator via radiation exchange and/or conduction/convection |
US9899479B2 (en) | 2015-05-15 | 2018-02-20 | Atomera Incorporated | Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216262A (en) * | 1992-03-02 | 1993-06-01 | Raphael Tsu | Quantum well structures useful for semiconductor devices |
WO2002103767A1 (en) * | 1998-11-09 | 2002-12-27 | Nanodynamics, Inc. | Epitaxial siox barrier/insulation layer______________________ |
US20040266045A1 (en) * | 2003-06-26 | 2004-12-30 | Rj Mears Llc. | Method for making semiconductor device including band-engineered superlattice |
US20050110003A1 (en) * | 2003-06-26 | 2005-05-26 | Rj Mears, Llc | Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03270072A (en) * | 1990-03-20 | 1991-12-02 | Fujitsu Ltd | Manufacture of semiconductor device |
US5461243A (en) * | 1993-10-29 | 1995-10-24 | International Business Machines Corporation | Substrate for tensilely strained semiconductor |
-
2006
- 2006-06-30 WO PCT/US2006/026029 patent/WO2007005862A1/en active Application Filing
- 2006-06-30 TW TW095123904A patent/TWI311373B/en active
- 2006-06-30 CN CNA2006800237491A patent/CN101278400A/en active Pending
- 2006-06-30 JP JP2008519701A patent/JP2008544581A/en active Pending
- 2006-06-30 AU AU2006265096A patent/AU2006265096A1/en not_active Abandoned
- 2006-06-30 TW TW095123912A patent/TW200707724A/en unknown
- 2006-06-30 CA CA002612243A patent/CA2612243A1/en not_active Abandoned
- 2006-06-30 EP EP06786244A patent/EP1920466A1/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216262A (en) * | 1992-03-02 | 1993-06-01 | Raphael Tsu | Quantum well structures useful for semiconductor devices |
WO2002103767A1 (en) * | 1998-11-09 | 2002-12-27 | Nanodynamics, Inc. | Epitaxial siox barrier/insulation layer______________________ |
US20040266045A1 (en) * | 2003-06-26 | 2004-12-30 | Rj Mears Llc. | Method for making semiconductor device including band-engineered superlattice |
WO2005034245A1 (en) * | 2003-06-26 | 2005-04-14 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
US20050110003A1 (en) * | 2003-06-26 | 2005-05-26 | Rj Mears, Llc | Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions |
Non-Patent Citations (3)
Title |
---|
See also references of EP1920466A1 * |
SEO YONG-JIN ET AL: "Transport through a nine period silicon/oxygen superlattice", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 79, no. 6, 6 August 2001 (2001-08-06), pages 788 - 790, XP012029987, ISSN: 0003-6951 * |
TSU R ET AL: "Structure of MBE grown semiconductor-atomic superlattices", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 227-228, July 2001 (2001-07-01), pages 21 - 26, XP004250792, ISSN: 0022-0248 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019199923A1 (en) * | 2018-04-12 | 2019-10-17 | Atomera Incorporated | Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice |
US10884185B2 (en) | 2018-04-12 | 2021-01-05 | Atomera Incorporated | Semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice |
US11355667B2 (en) | 2018-04-12 | 2022-06-07 | Atomera Incorporated | Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice |
Also Published As
Publication number | Publication date |
---|---|
AU2006265096A1 (en) | 2007-01-11 |
TWI311373B (en) | 2009-06-21 |
TW200707723A (en) | 2007-02-16 |
EP1920466A1 (en) | 2008-05-14 |
JP2008544581A (en) | 2008-12-04 |
CA2612243A1 (en) | 2007-01-11 |
CN101278400A (en) | 2008-10-01 |
TW200707724A (en) | 2007-02-16 |
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