WO2007002672A3 - Atomic layer deposition using alkaline earth metal beta-diketiminate precursors - Google Patents
Atomic layer deposition using alkaline earth metal beta-diketiminate precursors Download PDFInfo
- Publication number
- WO2007002672A3 WO2007002672A3 PCT/US2006/024995 US2006024995W WO2007002672A3 WO 2007002672 A3 WO2007002672 A3 WO 2007002672A3 US 2006024995 W US2006024995 W US 2006024995W WO 2007002672 A3 WO2007002672 A3 WO 2007002672A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- atomic layer
- layer deposition
- alkaline earth
- earth metal
- metal beta
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
Abstract
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT06774110T ATE509134T1 (en) | 2005-06-28 | 2006-06-27 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS USING METAL BETA DIKETIMINATE COMPOUNDS |
JP2008519486A JP5003978B2 (en) | 2005-06-28 | 2006-06-27 | Atomic layer deposition using alkaline earth metal .BETA.-diketiminate precursors. |
KR1020077030544A KR101274330B1 (en) | 2005-06-28 | 2006-06-27 | Atomic layer deposition using alkaline earth metal beta-diketiminate precursors |
EP06774110A EP1907600B1 (en) | 2005-06-28 | 2006-06-27 | Atomic layer deposition using alkaline earth metal beta-diketiminate precursors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/168,160 US7416994B2 (en) | 2005-06-28 | 2005-06-28 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
US11/168,160 | 2005-06-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2007002672A2 WO2007002672A2 (en) | 2007-01-04 |
WO2007002672A3 true WO2007002672A3 (en) | 2007-02-22 |
WO2007002672A9 WO2007002672A9 (en) | 2008-09-18 |
Family
ID=37338887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/024995 WO2007002672A2 (en) | 2005-06-28 | 2006-06-27 | Atomic layer deposition using alkaline earth metal beta-diketiminate precursors |
Country Status (8)
Country | Link |
---|---|
US (3) | US7416994B2 (en) |
EP (2) | EP1907600B1 (en) |
JP (1) | JP5003978B2 (en) |
KR (1) | KR101274330B1 (en) |
CN (1) | CN101208456A (en) |
AT (1) | ATE509134T1 (en) |
TW (1) | TWI398543B (en) |
WO (1) | WO2007002672A2 (en) |
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US7544398B1 (en) * | 2005-04-26 | 2009-06-09 | The Regents Of The Univesity Of California | Controlled nano-doping of ultra thin films |
US7572731B2 (en) * | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
US7439338B2 (en) * | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
US7416994B2 (en) | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
DE102005033579A1 (en) * | 2005-07-19 | 2007-01-25 | H.C. Starck Gmbh | Process for the preparation of thin hafnium or zirconium nitride layers |
JP4708905B2 (en) * | 2005-08-05 | 2011-06-22 | イビデン株式会社 | Thin film embedded capacitance, manufacturing method thereof, and printed wiring board |
US8524931B2 (en) * | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
JP5248025B2 (en) * | 2007-03-01 | 2013-07-31 | 東京エレクトロン株式会社 | Method for forming SrTiO3 film and computer-readable storage medium |
WO2009012341A2 (en) * | 2007-07-16 | 2009-01-22 | Advancaed Technology Materials, Inc. | Group iv complexes as cvd and ald precursors for forming metal-containing thin films |
US7928019B2 (en) * | 2007-08-10 | 2011-04-19 | Micron Technology, Inc. | Semiconductor processing |
WO2009041219A1 (en) * | 2007-09-04 | 2009-04-02 | Tokyo Electron Limited | Method for sr-ti-o-base film formation and recording medium |
WO2009086263A1 (en) * | 2007-12-28 | 2009-07-09 | Sigma-Aldrich Co. | Methods for preparing thin films using substituted pyrrolyl-metal precursors |
US20100003532A1 (en) * | 2008-06-06 | 2010-01-07 | Feist Benjamin J | Beta-diketiminate precursors for metal containing film deposition |
US8471049B2 (en) | 2008-12-10 | 2013-06-25 | Air Product And Chemicals, Inc. | Precursors for depositing group 4 metal-containing films |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
US8663735B2 (en) * | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
US8003521B2 (en) * | 2009-04-07 | 2011-08-23 | Micron Technology, Inc. | Semiconductor processing |
US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
US8697486B2 (en) | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
JP2012124322A (en) * | 2010-12-08 | 2012-06-28 | Elpida Memory Inc | Method of manufacturing semiconductor storage |
KR101721294B1 (en) * | 2011-04-06 | 2017-03-29 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Hafnium-containing or zirconium-containing precursors for vapor deposition |
TWI586828B (en) * | 2012-02-10 | 2017-06-11 | 財團法人國家同步輻射研究中心 | Doping method of atomic layer deposition |
KR102168174B1 (en) | 2014-03-19 | 2020-10-20 | 삼성전자주식회사 | Ni compound and method of forming thin film |
KR102282139B1 (en) * | 2015-05-12 | 2021-07-28 | 삼성전자주식회사 | Semiconductor devices |
JP6929790B2 (en) | 2015-05-27 | 2021-09-01 | エーエスエム アイピー ホールディング ビー.ブイ. | How to synthesize and use precursors for ALD of molybdenum or tungsten-containing thin films |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
US10358407B2 (en) | 2016-10-12 | 2019-07-23 | Asm Ip Holding B.V. | Synthesis and use of precursors for vapor deposition of tungsten containing thin films |
CN109402608B (en) * | 2017-08-16 | 2020-12-08 | 北京北方华创微电子装备有限公司 | Gas path system of atomic layer deposition equipment and control method thereof |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
US11155209B2 (en) * | 2019-08-22 | 2021-10-26 | Micron Technology, Inc. | Virtual mirror with automatic zoom based on vehicle sensors |
KR20210048408A (en) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor deposition reactor manifolds |
TW202136571A (en) | 2020-02-10 | 2021-10-01 | 荷蘭商Asm Ip 控股公司 | Deposition of hafnium oxide within a high aspect ratio hole |
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2005
- 2005-06-28 US US11/168,160 patent/US7416994B2/en active Active
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2006
- 2006-06-07 TW TW095120255A patent/TWI398543B/en active
- 2006-06-27 EP EP06774110A patent/EP1907600B1/en active Active
- 2006-06-27 EP EP10187947.6A patent/EP2290126B1/en active Active
- 2006-06-27 WO PCT/US2006/024995 patent/WO2007002672A2/en active Application Filing
- 2006-06-27 CN CNA2006800232835A patent/CN101208456A/en active Pending
- 2006-06-27 JP JP2008519486A patent/JP5003978B2/en active Active
- 2006-06-27 KR KR1020077030544A patent/KR101274330B1/en active IP Right Grant
- 2006-06-27 AT AT06774110T patent/ATE509134T1/en not_active IP Right Cessation
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2008
- 2008-07-29 US US12/181,578 patent/US7709399B2/en active Active
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2010
- 2010-03-31 US US12/751,283 patent/US8188464B2/en active Active
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US5972430A (en) * | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
US20020187578A1 (en) * | 2001-06-12 | 2002-12-12 | Kwon Hong | Method for manufacturing memory device |
US20030113480A1 (en) * | 2001-12-10 | 2003-06-19 | Hynix Semiconductor Inc. | Method for forming high dielectric layers using atomic layer deposition |
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Title |
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EL-KADERI H.M., HEEG M.J., WINTER C.H.: "Sandwich complexex of the Heavier Alkaline Earth Metals Containing hapto5 beta Diketiminato Ligand Sets", ORGANOMETALLICS, vol. 23, 14 September 2004 (2004-09-14), pages 4995 - 5002, XP007901335 * |
EL-KADERI H.M., HEEG M.J., WINTER C.H.: "Synthesis, Structure, and Ligand Redistribution Equilibria of Mixed Ligand Complexes of the Heavier Group 2 Elements Containing Pyrazolato and beta Diketiminato Ligands", EUR. J. INORG. CHEM., 6 June 2005 (2005-06-06), pages 2081 - 2088, XP007901334 * |
Also Published As
Publication number | Publication date |
---|---|
ATE509134T1 (en) | 2011-05-15 |
US8188464B2 (en) | 2012-05-29 |
WO2007002672A2 (en) | 2007-01-04 |
TW200704814A (en) | 2007-02-01 |
EP2290126A3 (en) | 2011-10-12 |
US7416994B2 (en) | 2008-08-26 |
US20060292841A1 (en) | 2006-12-28 |
EP1907600B1 (en) | 2011-05-11 |
KR101274330B1 (en) | 2013-06-13 |
CN101208456A (en) | 2008-06-25 |
US7709399B2 (en) | 2010-05-04 |
JP5003978B2 (en) | 2012-08-22 |
US20080280455A1 (en) | 2008-11-13 |
EP1907600A2 (en) | 2008-04-09 |
WO2007002672A9 (en) | 2008-09-18 |
KR20080021709A (en) | 2008-03-07 |
EP2290126B1 (en) | 2014-02-12 |
JP2008545277A (en) | 2008-12-11 |
US20100186668A1 (en) | 2010-07-29 |
EP2290126A2 (en) | 2011-03-02 |
TWI398543B (en) | 2013-06-11 |
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