WO2006138626A3 - (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD - Google Patents

(AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD Download PDF

Info

Publication number
WO2006138626A3
WO2006138626A3 PCT/US2006/023588 US2006023588W WO2006138626A3 WO 2006138626 A3 WO2006138626 A3 WO 2006138626A3 US 2006023588 W US2006023588 W US 2006023588W WO 2006138626 A3 WO2006138626 A3 WO 2006138626A3
Authority
WO
WIPO (PCT)
Prior art keywords
zno
wafer bonded
fabrication method
bonded structure
direct wafer
Prior art date
Application number
PCT/US2006/023588
Other languages
French (fr)
Other versions
WO2006138626A2 (en
Inventor
Akihiko Murai
Christina Ye Chen
Daniel B Thompson
Lee S Mccarthy
Steven P Denbaars
Shuji Nakamura
Umesh K Mishra
Original Assignee
Univ California
Japan Science & Tech Agency
Akihiko Murai
Christina Ye Chen
Daniel B Thompson
Lee S Mccarthy
Steven P Denbaars
Shuji Nakamura
Umesh K Mishra
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Japan Science & Tech Agency, Akihiko Murai, Christina Ye Chen, Daniel B Thompson, Lee S Mccarthy, Steven P Denbaars, Shuji Nakamura, Umesh K Mishra filed Critical Univ California
Priority to JP2008517176A priority Critical patent/JP5043835B2/en
Priority to EP06785031A priority patent/EP1908125A2/en
Publication of WO2006138626A2 publication Critical patent/WO2006138626A2/en
Publication of WO2006138626A3 publication Critical patent/WO2006138626A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
PCT/US2006/023588 2005-06-17 2006-06-16 (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD WO2006138626A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008517176A JP5043835B2 (en) 2005-06-17 2006-06-16 (Al, Ga, In) N and ZnO direct wafer bonding structure for optoelectronic applications and its fabrication method
EP06785031A EP1908125A2 (en) 2005-06-17 2006-06-16 (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US69171005P 2005-06-17 2005-06-17
US60/691,710 2005-06-17
US73231905P 2005-11-01 2005-11-01
US60/732,319 2005-11-01
US76488106P 2006-02-03 2006-02-03
US60/764,881 2006-02-03

Publications (2)

Publication Number Publication Date
WO2006138626A2 WO2006138626A2 (en) 2006-12-28
WO2006138626A3 true WO2006138626A3 (en) 2007-10-11

Family

ID=37571249

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/023588 WO2006138626A2 (en) 2005-06-17 2006-06-16 (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD

Country Status (6)

Country Link
US (2) US7719020B2 (en)
EP (1) EP1908125A2 (en)
JP (1) JP5043835B2 (en)
KR (1) KR20080030020A (en)
TW (1) TW200707806A (en)
WO (1) WO2006138626A2 (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US20080121918A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High light extraction efficiency sphere led
US9130119B2 (en) * 2006-12-11 2015-09-08 The Regents Of The University Of California Non-polar and semi-polar light emitting devices
US7768024B2 (en) * 2005-12-02 2010-08-03 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
KR20080074948A (en) * 2005-11-04 2008-08-13 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High light extraction efficiency light emitting diode(led)
KR20080077259A (en) * 2005-12-08 2008-08-21 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High efficiency light emitting diode(led)
WO2007098215A2 (en) * 2006-02-17 2007-08-30 The Regents Of The University Of California Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
JP2008091862A (en) * 2006-09-08 2008-04-17 Sharp Corp Nitride semiconductor light emitting device, and manufacturing method of nitride semiconductor light emitting device
JP2008117824A (en) * 2006-11-01 2008-05-22 Sharp Corp Method of manufacturing nitride-based semiconductor element
EP2087507A4 (en) * 2006-11-15 2010-07-07 Univ California Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
EP2087563B1 (en) * 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
TWI460881B (en) 2006-12-11 2014-11-11 Univ California Transparent light emitting diodes
JP2010512661A (en) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Growth of high performance nonpolar group III nitride optical devices by metal organic chemical vapor deposition (MOCVD)
WO2008121978A1 (en) * 2007-03-29 2008-10-09 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
EP2174351A1 (en) * 2007-07-26 2010-04-14 The Regents of the University of California Light emitting diodes with a p-type surface
TWI495144B (en) * 2007-08-23 2015-08-01 Epistar Corp A light-emitting device and the manufacturing method thereof
KR101490112B1 (en) * 2008-03-28 2015-02-05 삼성전자주식회사 Inverter and logic circuit comprising the same
CN102099976B (en) * 2008-05-30 2013-06-12 加利福尼亚大学董事会 (Al,Ga,In)N diode laser fabricated at reduced temperature
US8692260B2 (en) 2008-09-26 2014-04-08 Soitec Method of forming a composite laser substrate
CN102171846A (en) * 2008-10-09 2011-08-31 加利福尼亚大学董事会 Photoelectrochemical etching for chip shaping of light emitting diodes
JP5603546B2 (en) * 2008-10-22 2014-10-08 パナソニック株式会社 Semiconductor light emitting element and light emitting device
JP2010135746A (en) * 2008-10-29 2010-06-17 Panasonic Electric Works Co Ltd Semiconductor light-emitting element and method of manufacturing the same, light-emitting device
JP5407385B2 (en) * 2009-02-06 2014-02-05 住友電気工業株式会社 Composite substrate, epitaxial substrate, semiconductor device and composite substrate manufacturing method
US8642369B2 (en) * 2009-03-03 2014-02-04 Zn Technology, Inc. Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
JP5249856B2 (en) * 2009-05-27 2013-07-31 パナソニック株式会社 Light emitting device
JP2010278316A (en) * 2009-05-29 2010-12-09 Panasonic Electric Works Co Ltd Light emitting device
KR20120099709A (en) 2009-11-03 2012-09-11 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
KR100986560B1 (en) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
JP5801542B2 (en) 2010-07-13 2015-10-28 昭和電工株式会社 Light emitting diode and light emitting diode lamp
US9818901B2 (en) 2011-05-13 2017-11-14 International Business Machines Corporation Wafer bonded solar cells and fabrication methods
GB201202222D0 (en) * 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
KR101873220B1 (en) * 2012-03-14 2018-07-05 삼성전자주식회사 Method of manufacturing light emitting diode for light emitting diode module
SG2014013585A (en) 2012-07-26 2014-06-27 Ev Group E Thallner Gmbh Method for bonding of substrates
JP6068165B2 (en) 2013-01-29 2017-01-25 スタンレー電気株式会社 Semiconductor optical device and method of manufacturing semiconductor optical device
WO2015103266A1 (en) 2013-12-30 2015-07-09 The Regents Of The University Of California Monolithic integration of optically pumped iii-nitride devices
US20150372173A1 (en) * 2014-06-24 2015-12-24 University Of Florida Research Foundation, Inc. Graded transparent conducting oxide (g-tco) for thin film solar cells
JP2017022327A (en) 2015-07-15 2017-01-26 東京エレクトロン株式会社 Naturally oxidized film removing method and naturally oxidized film removing device
US11411137B2 (en) * 2016-02-05 2022-08-09 The Regents Of The University Of California III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
DE102017111938B4 (en) * 2017-05-31 2022-09-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optically pumped semiconductor laser diode
KR102117084B1 (en) * 2018-08-20 2020-06-01 광전자 주식회사 Highly efficient oxidation-type VCSEL with improved light extraction and method for manufacturing thereof
CN109543515B (en) * 2018-10-15 2022-06-24 华为技术有限公司 Optical element, monitoring system and method thereof, active light-emitting module and terminal
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
DE102021133904A1 (en) 2021-12-20 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING A SEMICONDUCTOR LASER

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123204A1 (en) * 2001-03-01 2002-09-05 Torvik John Tarje Method of making a hybrid substrate having a thin silicon carbide membrane layer
US6559544B1 (en) * 2002-03-28 2003-05-06 Alan Roth Programmable interconnect for semiconductor devices
US20040079408A1 (en) * 2002-10-23 2004-04-29 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US20050029528A1 (en) * 2003-08-06 2005-02-10 Rohm Co., Ltd. Semiconductor light emitting device
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607463A (en) * 1968-08-02 1971-09-21 Varian Associates Method for growing tin-doped n-type epitaxial gallium arsenide from the liquid state
JPH07254732A (en) * 1994-03-15 1995-10-03 Toshiba Corp Semiconductor light emitting device
US5932048A (en) * 1995-04-06 1999-08-03 Komatsu Electronic Metals Co., Ltd. Method of fabricating direct-bonded semiconductor wafers
WO1999007028A1 (en) * 1997-07-31 1999-02-11 Ecole Polytechnique Federale De Lausanne Electroluminescent device
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
DE19918370B4 (en) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED white light source with lens
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
US6445007B1 (en) * 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US7119271B2 (en) * 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
TW573372B (en) * 2002-11-06 2004-01-21 Super Nova Optoelectronics Cor GaN-based III-V group compound semiconductor light-emitting diode and the manufacturing method thereof
US6955985B2 (en) * 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
WO2004020686A2 (en) * 2002-08-28 2004-03-11 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
US7078735B2 (en) * 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
KR20040092512A (en) * 2003-04-24 2004-11-04 (주)그래픽테크노재팬 A semiconductor light emitting device with reflectors having a cooling function
TWI234295B (en) * 2003-10-08 2005-06-11 Epistar Corp High-efficiency nitride-based light-emitting device
WO2005064666A1 (en) * 2003-12-09 2005-07-14 The Regents Of The University Of California Highly efficient gallium nitride based light emitting diodes via surface roughening
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
JP4976857B2 (en) 2004-02-20 2012-07-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Illumination system having a radiation source and a fluorescent material
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US6989555B2 (en) * 2004-04-21 2006-01-24 Lumileds Lighting U.S., Llc Strain-controlled III-nitride light emitting device
US7064353B2 (en) * 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
DE202005001000U1 (en) * 2005-01-21 2005-06-02 Trw Automotive Safety Systems Gmbh Airbag module for a vehicle occupant restraint device
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
KR20080074948A (en) * 2005-11-04 2008-08-13 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High light extraction efficiency light emitting diode(led)
KR20080077259A (en) 2005-12-08 2008-08-21 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High efficiency light emitting diode(led)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123204A1 (en) * 2001-03-01 2002-09-05 Torvik John Tarje Method of making a hybrid substrate having a thin silicon carbide membrane layer
US6559544B1 (en) * 2002-03-28 2003-05-06 Alan Roth Programmable interconnect for semiconductor devices
US20040079408A1 (en) * 2002-10-23 2004-04-29 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US20050029528A1 (en) * 2003-08-06 2005-02-10 Rohm Co., Ltd. Semiconductor light emitting device
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device

Also Published As

Publication number Publication date
US8334151B2 (en) 2012-12-18
EP1908125A2 (en) 2008-04-09
JP2008547210A (en) 2008-12-25
US7719020B2 (en) 2010-05-18
JP5043835B2 (en) 2012-10-10
TW200707806A (en) 2007-02-16
WO2006138626A2 (en) 2006-12-28
US20070001186A1 (en) 2007-01-04
KR20080030020A (en) 2008-04-03
US20100187555A1 (en) 2010-07-29

Similar Documents

Publication Publication Date Title
WO2006138626A3 (en) (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD
TW200703706A (en) Light emitting diode and manufacturing method thereof
TW200733436A (en) Light emitting diode package structure and fabrication method thereof
TW200627674A (en) High efficiency group Ⅲ nitride-silicon carbide light emitting diode
TW200701335A (en) Nitride semiconductor device and manufacturing mathod thereof
TW200505050A (en) Solid-state component device and manufacturing method thereof
WO2009005311A3 (en) Light emitting device and method of fabricating the same
TW200731577A (en) Semiconductor light emitting device and method of manufacturing the same
WO2005013365A3 (en) Semiconductor light emitting device, light emitting module, and lighting apparatus
WO2008102548A1 (en) Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
EP1981093A4 (en) Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
TW200746474A (en) Semiconductor device and semiconductor device fabrication method
WO2006097868A3 (en) Wavelength-converted semiconductor light-emitting device
TW200705721A (en) Method for manufacturing gallium nitride light emitting diode devices
WO2009075183A1 (en) Light emitting diode and method for manufacturing the same
EP2187453A3 (en) Light Emitting Device and Method of Manufacturing the Same
WO2007136064A1 (en) Semiconductor light emitting element and method for manufacturing same
TW200715609A (en) Semiconductor light emitting device and manufacturing method therefor
TW200644288A (en) Free standing substrate, method for manufacturing the same, and semiconductor light emitting element
TW200802934A (en) Light emitting diode and method manufacturing the same
TW200625695A (en) Manufacturing method for semiconductor light emitting device
TW200729441A (en) Semiconductor devices and fabrication method thereof
WO2012017304A3 (en) White led device and manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2008517176

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2006785031

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020087001201

Country of ref document: KR