WO2006137926A3 - Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches - Google Patents

Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches Download PDF

Info

Publication number
WO2006137926A3
WO2006137926A3 PCT/US2005/039623 US2005039623W WO2006137926A3 WO 2006137926 A3 WO2006137926 A3 WO 2006137926A3 US 2005039623 W US2005039623 W US 2005039623W WO 2006137926 A3 WO2006137926 A3 WO 2006137926A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanotube
esd
input pad
circuit
volatile
Prior art date
Application number
PCT/US2005/039623
Other languages
French (fr)
Other versions
WO2006137926A2 (en
Inventor
Claude L Bertin
Brent M Segal
Thomas Ruckes
Jonathan W Ward
Original Assignee
Nantero Inc
Claude L Bertin
Brent M Segal
Thomas Ruckes
Jonathan W Ward
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc, Claude L Bertin, Brent M Segal, Thomas Ruckes, Jonathan W Ward filed Critical Nantero Inc
Priority to EP05858287A priority Critical patent/EP1807919A4/en
Priority to CA002586120A priority patent/CA2586120A1/en
Publication of WO2006137926A2 publication Critical patent/WO2006137926A2/en
Publication of WO2006137926A3 publication Critical patent/WO2006137926A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01066—Dysprosium [Dy]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0257—Overvoltage protection
    • H05K1/0259—Electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing

Abstract

Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activate state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
PCT/US2005/039623 2004-11-02 2005-11-02 Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches WO2006137926A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05858287A EP1807919A4 (en) 2004-11-02 2005-11-02 Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
CA002586120A CA2586120A1 (en) 2004-11-02 2005-11-02 Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US62429704P 2004-11-02 2004-11-02
US62442804P 2004-11-02 2004-11-02
US60/624,297 2004-11-02
US60/624,428 2004-11-02

Publications (2)

Publication Number Publication Date
WO2006137926A2 WO2006137926A2 (en) 2006-12-28
WO2006137926A3 true WO2006137926A3 (en) 2007-11-22

Family

ID=37570905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/039623 WO2006137926A2 (en) 2004-11-02 2005-11-02 Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches

Country Status (4)

Country Link
US (3) US7567414B2 (en)
EP (1) EP1807919A4 (en)
CA (1) CA2586120A1 (en)
WO (1) WO2006137926A2 (en)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6531600A (en) 1999-08-27 2001-03-26 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US9422651B2 (en) 2003-01-13 2016-08-23 Nantero Inc. Methods for arranging nanoscopic elements within networks, fabrics, and films
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US9574290B2 (en) 2003-01-13 2017-02-21 Nantero Inc. Methods for arranging nanotube elements within nanotube fabrics and films
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7280394B2 (en) * 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
JP3731589B2 (en) * 2003-07-18 2006-01-05 ソニー株式会社 Imaging device and synchronization signal generator
EP1665278A4 (en) * 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7652342B2 (en) * 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
JP4195431B2 (en) * 2004-10-07 2008-12-10 株式会社東芝 Method for verifying electrostatic discharge and method for manufacturing semiconductor device
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
TWI388042B (en) * 2004-11-04 2013-03-01 Taiwan Semiconductor Mfg Integrated circuit nanotube-based substrate
WO2006065937A2 (en) 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) * 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7402770B2 (en) 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
KR20080084812A (en) 2005-11-22 2008-09-19 쇼킹 테크놀로지스 인코포레이티드 Semiconductor devices including voltage switchable materials for over-voltage protection
US20080029405A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having conductive or semi-conductive organic material
US7981325B2 (en) 2006-07-29 2011-07-19 Shocking Technologies, Inc. Electronic device for voltage switchable dielectric material having high aspect ratio particles
TWI457923B (en) 2006-08-08 2014-10-21 Nantero Inc Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches
WO2008036984A2 (en) * 2006-09-24 2008-03-27 Shocking Technologies Inc Technique for plating substrate devices using voltage switchable dielectric material and light assistance
EP2084748A4 (en) 2006-09-24 2011-09-28 Shocking Technologies Inc Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
US7776760B2 (en) * 2006-11-07 2010-08-17 Nanosys, Inc. Systems and methods for nanowire growth
US7777296B2 (en) * 2006-12-05 2010-08-17 International Business Machines Corporation Nano-fuse structural arrangements having blow protection barrier spaced from and surrounding fuse link
US7701013B2 (en) * 2007-07-10 2010-04-20 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US7550354B2 (en) * 2007-07-11 2009-06-23 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US20090050856A1 (en) * 2007-08-20 2009-02-26 Lex Kosowsky Voltage switchable dielectric material incorporating modified high aspect ratio particles
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
US20090220771A1 (en) * 2008-02-12 2009-09-03 Robert Fleming Voltage switchable dielectric material with superior physical properties for structural applications
US7692590B2 (en) * 2008-02-20 2010-04-06 International Business Machines Corporation Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s)
TW200947822A (en) * 2008-05-09 2009-11-16 Tpo Displays Corp Electrostatic discharge (ESD) protection circuit and electronic system utilizing the same
KR100975530B1 (en) * 2008-08-06 2010-08-12 주식회사 넥스트론 Transient pulse filter manufacturing method using anodic aluminum oxide and the Transient pulse filter
US8063454B2 (en) 2008-08-13 2011-11-22 Micron Technology, Inc. Semiconductor structures including a movable switching element and systems including same
US9208930B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductive core shelled particles
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8399773B2 (en) * 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8968606B2 (en) * 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
JP5728171B2 (en) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
WO2011016815A1 (en) * 2009-08-07 2011-02-10 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US20110056812A1 (en) * 2009-09-08 2011-03-10 Kaul Anupama B Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same
US9053844B2 (en) 2009-09-09 2015-06-09 Littelfuse, Inc. Geometric configuration or alignment of protective material in a gap structure for electrical devices
US8435798B2 (en) * 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
WO2011103558A1 (en) 2010-02-22 2011-08-25 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
EP2581108B1 (en) 2011-10-13 2013-10-23 Sorin CRM SAS Module for controlled switching of a multielectrode probe for an active implantable medical device
WO2014069363A1 (en) 2012-11-02 2014-05-08 ローム株式会社 Chip condenser, circuit assembly, and electronic device
JP5784688B2 (en) * 2012-12-10 2015-09-24 サムソン エレクトロ−メカニックス カンパニーリミテッド． Electrostatic discharge structure and method for manufacturing electrostatic discharge structure
CN105009293B (en) 2013-03-14 2018-10-23 英特尔公司 Mechanical switching devices based on nano wire
US9007732B2 (en) * 2013-03-15 2015-04-14 Nantero Inc. Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same
US9177924B2 (en) 2013-12-18 2015-11-03 Taiwan Semiconductor Manufacturing Company Limited Vertical nanowire transistor for input/output structure
US10665798B2 (en) * 2016-07-14 2020-05-26 International Business Machines Corporation Carbon nanotube transistor and logic with end-bonded metal contacts
US10665799B2 (en) * 2016-07-14 2020-05-26 International Business Machines Corporation N-type end-bonded metal contacts for carbon nanotube transistors
WO2020023640A1 (en) 2018-07-24 2020-01-30 Shapirten Laboratories Llc Power efficient stylus for an electronic device
US11449175B2 (en) 2020-03-31 2022-09-20 Apple Inc. System and method for multi-frequency projection scan for input device detection
US11460933B2 (en) 2020-09-24 2022-10-04 Apple Inc. Shield electrode for input device
US11287926B1 (en) 2020-09-25 2022-03-29 Apple Inc. System and machine learning method for detecting input device distance from touch sensitive surfaces
US11526240B1 (en) 2020-09-25 2022-12-13 Apple Inc. Reducing sensitivity to leakage variation for passive stylus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329223B2 (en) * 1999-04-29 2001-12-11 Winbond Electronics Corporation Method for preventing electrostatic discharge in an integrated circuit
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US20040031975A1 (en) * 2002-03-18 2004-02-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
KR20040050339A (en) * 2002-12-10 2004-06-16 한국전자통신연구원 Electrostatic discharge protection structure and method for manufacturing the same
US20040222817A1 (en) * 2002-07-08 2004-11-11 Madurawe Raminda Udaya Alterable application specific integrated circuit (ASIC)

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57113296A (en) 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
US5950239A (en) * 1995-06-29 1999-09-14 Lopez; Richard Magnetic treatment clothing
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US6057637A (en) 1996-09-13 2000-05-02 The Regents Of The University Of California Field emission electron source
DE69830847T2 (en) 1997-03-07 2006-01-12 William Marsh Rice University, Houston CARBON FIBERS OUTSIDE UNIQUE CARBON NANOTUBES
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6409567B1 (en) 1997-12-15 2002-06-25 E.I. Du Pont De Nemours And Company Past-deposited carbon electron emitters
KR20010074667A (en) 1998-06-19 2001-08-08 추후보정 Free-standing and aligned carbon nanotubes and synthesis thereof
US6346189B1 (en) 1998-08-14 2002-02-12 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube structures made using catalyst islands
US7416699B2 (en) 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6232706B1 (en) 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6472705B1 (en) 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
JP3943272B2 (en) 1999-01-18 2007-07-11 双葉電子工業株式会社 Film forming method of carbon nanotube
WO2000048195A1 (en) 1999-02-12 2000-08-17 Board Of Trustees Operating Michigan State University Nanocapsules containing charged particles, their uses and methods of forming the same
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US7030408B1 (en) 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6518156B1 (en) 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
AUPP976499A0 (en) 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
US6141245A (en) 1999-04-30 2000-10-31 International Business Machines Corporation Impedance control using fuses
US6256184B1 (en) * 1999-06-16 2001-07-03 International Business Machines Corporation Method and apparatus for providing electrostatic discharge protection
JP4063451B2 (en) 1999-07-26 2008-03-19 双葉電子工業株式会社 Carbon nanotube pattern formation method
US6277318B1 (en) 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6198655B1 (en) 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
KR20010055501A (en) 1999-12-10 2001-07-04 김순택 Method for forming cathode of field emission display
KR20010056153A (en) 1999-12-14 2001-07-04 구자홍 Field emission display device and its fabrication method
US7335603B2 (en) 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US6495116B1 (en) 2000-04-10 2002-12-17 Lockheed Martin Corporation Net shape manufacturing using carbon nanotubes
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
DE10134866B4 (en) 2000-07-18 2005-08-11 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the process grown carbon nanotubes
KR100376768B1 (en) 2000-08-23 2003-03-19 한국과학기술연구원 Parallel and selective growth and connection method of carbon nanotubes on the substrates for electronic-spintronic device applications
US6495258B1 (en) 2000-09-20 2002-12-17 Auburn University Structures with high number density of carbon nanotubes and 3-dimensional distribution
US6495905B2 (en) 2000-11-09 2002-12-17 Texas Instruments Incorporated Nanomechanical switches and circuits
KR20030059291A (en) 2000-11-29 2003-07-07 닛본 덴끼 가부시끼가이샤 Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode
AU2002229046B2 (en) 2000-12-11 2006-05-18 President And Fellows Of Harvard College Nanosensors
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
WO2002079514A1 (en) 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
CA2442310A1 (en) 2001-03-26 2002-10-03 Eikos, Inc. Coatings containing carbon nanotubes
US6803840B2 (en) 2001-03-30 2004-10-12 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
AU2002307129A1 (en) 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US20020160111A1 (en) 2001-04-25 2002-10-31 Yi Sun Method for fabrication of field emission devices using carbon nanotube film as a cathode
JP4207398B2 (en) 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
WO2002095097A1 (en) 2001-05-21 2002-11-28 Trustees Of Boston College, The Varied morphology carbon nanotubes and methods for their manufacture
US20040023253A1 (en) 2001-06-11 2004-02-05 Sandeep Kunwar Device structure for closely spaced electrodes
US6673424B1 (en) 2001-06-19 2004-01-06 Arizona Board Of Regents Devices based on molecular electronics
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
WO2003013199A2 (en) 2001-07-27 2003-02-13 Eikos, Inc. Conformal coatings comprising carbon nanotubes
US8715790B2 (en) 2001-07-27 2014-05-06 University Of Surrey Production of carbon nanotubes
KR100455284B1 (en) 2001-08-14 2004-11-12 삼성전자주식회사 High-throughput sensor for detecting biomolecules using carbon nanotubes
JP4306990B2 (en) 2001-10-18 2009-08-05 独立行政法人産業技術総合研究所 Nonlinear optical element
US6645628B2 (en) 2001-11-13 2003-11-11 The United States Of America As Represented By The Secretary Of The Air Force Carbon nanotube coated anode
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6894359B2 (en) 2002-09-04 2005-05-17 Nanomix, Inc. Sensitivity control for nanotube sensors
AU2003216070A1 (en) 2002-01-18 2003-09-02 California Institute Of Technology Array-based architecture for molecular electronics
EP1341184B1 (en) 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US6858197B1 (en) 2002-03-13 2005-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled patterning and growth of single wall and multi-wall carbon nanotubes
US6919730B2 (en) 2002-03-18 2005-07-19 Honeywell International, Inc. Carbon nanotube sensor
US6899945B2 (en) 2002-03-19 2005-05-31 William Marsh Rice University Entangled single-wall carbon nanotube solid material and methods for making same
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6946410B2 (en) 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
AU2003229333A1 (en) 2002-05-21 2003-12-12 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
US6759693B2 (en) 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
US20040007528A1 (en) 2002-07-03 2004-01-15 The Regents Of The University Of California Intertwined, free-standing carbon nanotube mesh for use as separation, concentration, and/or filtration medium
JP4338948B2 (en) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 Method for producing carbon nanotube semiconductor device
US6809465B2 (en) 2002-08-23 2004-10-26 Samsung Electronics Co., Ltd. Article comprising MEMS-based two-dimensional e-beam sources and method for making the same
JP4547852B2 (en) 2002-09-04 2010-09-22 富士ゼロックス株式会社 Manufacturing method of electrical parts
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
WO2004051219A2 (en) 2002-11-27 2004-06-17 Molecular Nanosystems, Inc. Nanotube chemical sensor based on work function of electrodes
US20040265550A1 (en) 2002-12-06 2004-12-30 Glatkowski Paul J. Optically transparent nanostructured electrical conductors
US6919740B2 (en) 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
CA2520661A1 (en) * 2003-03-28 2004-10-14 Nantero, Inc. Nanotube-on-gate fet structures and applications
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7280394B2 (en) 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US7115960B2 (en) 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
EP1665278A4 (en) 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
WO2005017967A2 (en) 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7354877B2 (en) 2003-10-29 2008-04-08 Lockheed Martin Corporation Carbon nanotube fabrics
US7002217B2 (en) * 2004-06-12 2006-02-21 Solectron Corporation Electrostatic discharge mitigation structure and methods thereof using a dissipative capacitor with voltage dependent resistive material
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7330709B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329223B2 (en) * 1999-04-29 2001-12-11 Winbond Electronics Corporation Method for preventing electrostatic discharge in an integrated circuit
US20020130353A1 (en) * 1999-07-02 2002-09-19 Lieber Charles M. Nanoscopic wire-based devices, arrays, and methods of their manufacture
US20040031975A1 (en) * 2002-03-18 2004-02-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US20040222817A1 (en) * 2002-07-08 2004-11-11 Madurawe Raminda Udaya Alterable application specific integrated circuit (ASIC)
KR20040050339A (en) * 2002-12-10 2004-06-16 한국전자통신연구원 Electrostatic discharge protection structure and method for manufacturing the same

Also Published As

Publication number Publication date
EP1807919A4 (en) 2011-05-04
US20110083319A1 (en) 2011-04-14
US20060193093A1 (en) 2006-08-31
US8631562B2 (en) 2014-01-21
WO2006137926A2 (en) 2006-12-28
EP1807919A2 (en) 2007-07-18
US7567414B2 (en) 2009-07-28
US20090310268A1 (en) 2009-12-17
CA2586120A1 (en) 2006-12-28
US7839615B2 (en) 2010-11-23

Similar Documents

Publication Publication Date Title
WO2006137926A3 (en) Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
JP5650659B2 (en) Electrostatic discharge protection circuit having rise time detector and discharge continuation circuit
WO2005122356A3 (en) Electrostatic discharge protection circuit
EP1277236B1 (en) Electrostatic discharge (esd) protection circuit
JP4806540B2 (en) Semiconductor integrated circuit device
CN105281307A (en) Apparatus and methods for transient overstress protection with active feedback
WO2002029950A3 (en) Electro-static discharge protection circuit
CN107424988B (en) ESD protection method and ESD protection circuit
WO2006110649A3 (en) System for and method of protecting an integrated circuit from over currents
WO2006053337A2 (en) Electrostatic discharge protection power rail clamp with feedback-enhanced triggering and conditioning circuitry
US10032584B2 (en) Robust semiconductor power devices with design to protect transistor cells with slower switching speed
KR101089469B1 (en) Active protection circuit arrangement
US10354991B2 (en) Integrated circuit with protection from transient electrical stress events and method therefor
WO2007047771A8 (en) Antifuse programming, protection, and sensing device
JP2008523604A (en) Electrostatic discharge protection device
US20180083440A1 (en) Integrated circuit electrostatic discharge protection with disable-enable
TW200735170A (en) Semiconductor device
TW200511552A (en) Electrostatic discharge protection circuit and its method through control of substrate potential
US7359169B2 (en) Circuit for protecting integrated circuits against electrostatic discharges
CN101533830A (en) Electrostatic discharge protecting device of high-voltage cushion
EP0375037A3 (en) Protection of power integrated circuits against load voltage surges
US20070115600A1 (en) Apparatus and methods for improved circuit protection from EOS conditions during both powered off and powered on states
WO2003067617A3 (en) Circuit for protecting mems and electronic relay devices
WO2009021189A2 (en) Electrostatic discharge trigger circuits for self-protecting cascode stages
JP5143096B2 (en) Protection circuit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2586120

Country of ref document: CA

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2005858287

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2005858287

Country of ref document: EP