WO2006135031A3 - Bipolar semiconductor device and manufacturing method thereof - Google Patents

Bipolar semiconductor device and manufacturing method thereof Download PDF

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Publication number
WO2006135031A3
WO2006135031A3 PCT/JP2006/312077 JP2006312077W WO2006135031A3 WO 2006135031 A3 WO2006135031 A3 WO 2006135031A3 JP 2006312077 W JP2006312077 W JP 2006312077W WO 2006135031 A3 WO2006135031 A3 WO 2006135031A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
recombination
semiconductor device
bipolar semiconductor
semiconductor
Prior art date
Application number
PCT/JP2006/312077
Other languages
French (fr)
Other versions
WO2006135031A2 (en
Inventor
Ken-Ichi Nonaka
Original Assignee
Honda Motor Co Ltd
Ken-Ichi Nonaka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd, Ken-Ichi Nonaka filed Critical Honda Motor Co Ltd
Priority to US11/919,350 priority Critical patent/US8460994B2/en
Priority to EP06757370.9A priority patent/EP1878056B1/en
Publication of WO2006135031A2 publication Critical patent/WO2006135031A2/en
Publication of WO2006135031A3 publication Critical patent/WO2006135031A3/en
Priority to US13/887,935 priority patent/US8653627B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Abstract

A semiconductor crystal includes a recombination-­inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16) and emitter regions (14) and that separates the semiconductor surface having a large number of surface states from the portion that primarily conducts the positive hole electric current and the electron current.Recombination is inhibited, and the current amplification factor is thereby improved and the ON voltage reduced.
PCT/JP2006/312077 2005-06-13 2006-06-09 Bipolar semiconductor device and manufacturing method thereof WO2006135031A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/919,350 US8460994B2 (en) 2005-06-13 2006-06-09 Bipolar semiconductor device and manufacturing method thereof
EP06757370.9A EP1878056B1 (en) 2005-06-13 2006-06-09 Bipolar semiconductor device and manufacturing method thereof
US13/887,935 US8653627B2 (en) 2005-06-13 2013-05-06 Bipolar semiconductor device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005172620A JP4777699B2 (en) 2005-06-13 2005-06-13 Bipolar semiconductor device and manufacturing method thereof
JP2005-172620 2005-06-13

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/919,350 A-371-Of-International US8460994B2 (en) 2005-06-13 2006-06-09 Bipolar semiconductor device and manufacturing method thereof
US13/887,935 Division US8653627B2 (en) 2005-06-13 2013-05-06 Bipolar semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2006135031A2 WO2006135031A2 (en) 2006-12-21
WO2006135031A3 true WO2006135031A3 (en) 2007-05-24

Family

ID=37532705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/312077 WO2006135031A2 (en) 2005-06-13 2006-06-09 Bipolar semiconductor device and manufacturing method thereof

Country Status (6)

Country Link
US (2) US8460994B2 (en)
EP (1) EP1878056B1 (en)
JP (1) JP4777699B2 (en)
KR (1) KR100972217B1 (en)
CN (1) CN100544023C (en)
WO (1) WO2006135031A2 (en)

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US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8710510B2 (en) 2006-08-17 2014-04-29 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
JP5140347B2 (en) 2007-08-29 2013-02-06 株式会社日立製作所 Bipolar transistor and manufacturing method thereof
CN101855726B (en) 2007-11-09 2015-09-16 克里公司 There is mesa structure and comprise the power semiconductor of resilient coating of table top step
US9640609B2 (en) 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8097919B2 (en) 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US20110169015A1 (en) * 2008-08-26 2011-07-14 Honda Motor Co., Ltd. Bipolar semiconductor device and method for manufacturing same
WO2010024239A1 (en) * 2008-08-26 2010-03-04 本田技研工業株式会社 Junction semiconductor device and method for manufacturing same
JP5514726B2 (en) * 2008-08-26 2014-06-04 本田技研工業株式会社 Junction type semiconductor device and manufacturing method thereof
JP5469068B2 (en) * 2008-08-26 2014-04-09 本田技研工業株式会社 Bipolar silicon carbide semiconductor device and manufacturing method thereof
US8395237B2 (en) * 2008-10-21 2013-03-12 Nec Corporation Group nitride bipolar transistor
CN102246284B (en) 2008-10-21 2014-02-19 瑞萨电子株式会社 Bipolar transistor
US8497552B2 (en) 2008-12-01 2013-07-30 Cree, Inc. Semiconductor devices with current shifting regions and related methods
SE533700C2 (en) * 2009-03-24 2010-12-07 Transic Ab Silicon carbide bipolar transistor
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
JP2011091179A (en) * 2009-10-22 2011-05-06 Honda Motor Co Ltd Bipolar semiconductor device and method of manufacturing the same
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8552435B2 (en) * 2010-07-21 2013-10-08 Cree, Inc. Electronic device structure including a buffer layer on a base layer
US8809904B2 (en) 2010-07-26 2014-08-19 Cree, Inc. Electronic device structure with a semiconductor ledge layer for surface passivation
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
US9318623B2 (en) 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
WO2012139633A1 (en) * 2011-04-12 2012-10-18 X-Fab Semiconductor Foundries Ag Bipolar transistor with gate electrode over the emitter base junction
SE1150386A1 (en) 2011-05-03 2012-11-04 Fairchild Semiconductor Silicon carbide bipolar transistor with improved breakthrough voltage
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
CN103918079B (en) 2011-09-11 2017-10-31 科锐 Including the high current density power model with the transistor for improving layout
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP2015056544A (en) * 2013-09-12 2015-03-23 住友電気工業株式会社 Silicon carbide semiconductor device and method for manufacturing the same
CN105957886B (en) * 2016-06-28 2019-05-14 中国科学院微电子研究所 A kind of silicon carbide bipolar junction transistor
CN105977287B (en) * 2016-07-25 2018-11-09 电子科技大学 A kind of silicon carbide bipolar junction transistor

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US6355947B1 (en) * 1998-08-20 2002-03-12 Nec Corporation Heterojunction bipolar transistor with band gap graded emitter
WO2000065636A2 (en) * 1999-04-21 2000-11-02 Abb Research Ltd A bipolar transistor
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Also Published As

Publication number Publication date
CN101199058A (en) 2008-06-11
KR100972217B1 (en) 2010-07-26
US8460994B2 (en) 2013-06-11
US8653627B2 (en) 2014-02-18
CN100544023C (en) 2009-09-23
US20100001290A1 (en) 2010-01-07
JP4777699B2 (en) 2011-09-21
US20130240910A1 (en) 2013-09-19
KR20080003932A (en) 2008-01-08
WO2006135031A2 (en) 2006-12-21
EP1878056A2 (en) 2008-01-16
JP2006351621A (en) 2006-12-28
EP1878056B1 (en) 2014-07-23

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