WO2006127894A3 - Deposition of tensile and compressive stressed materials - Google Patents

Deposition of tensile and compressive stressed materials Download PDF

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Publication number
WO2006127894A3
WO2006127894A3 PCT/US2006/020227 US2006020227W WO2006127894A3 WO 2006127894 A3 WO2006127894 A3 WO 2006127894A3 US 2006020227 W US2006020227 W US 2006020227W WO 2006127894 A3 WO2006127894 A3 WO 2006127894A3
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WO
WIPO (PCT)
Prior art keywords
mil
tensile
electric field
silicon nitride
deposition
Prior art date
Application number
PCT/US2006/020227
Other languages
French (fr)
Other versions
WO2006127894A2 (en
Inventor
Lewis Stern
John Albright
Original Assignee
Applied Materials Inc
Lewis Stern
John Albright
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Lewis Stern, John Albright filed Critical Applied Materials Inc
Publication of WO2006127894A2 publication Critical patent/WO2006127894A2/en
Publication of WO2006127894A3 publication Critical patent/WO2006127894A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Abstract

A method of depositing tensile or compressively stressed silicon nitride 20 on a substrate 32 is described. Silicon nitride 20 having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and nitrogen-containing gas, maintained in an electric field having a strength of from about 25 V/mil to about 300 V/mil. The electric field is formed by applying a voltage at a power level of less than about 60 Watts across electrodes 105, 109 that are spaced apart by a separation distance that is at least about 600 mils. Alternatively, silicon nitride 20 having a compressive stress with an absolute value of at least about 2000 MPa can be formed in an electric field having a strength of from about 400 V/mil to about 800 V/mil.
PCT/US2006/020227 2005-05-23 2006-05-22 Deposition of tensile and compressive stressed materials WO2006127894A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/134,981 2005-05-23
US11/134,981 US7247582B2 (en) 2005-05-23 2005-05-23 Deposition of tensile and compressive stressed materials

Publications (2)

Publication Number Publication Date
WO2006127894A2 WO2006127894A2 (en) 2006-11-30
WO2006127894A3 true WO2006127894A3 (en) 2007-05-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/020227 WO2006127894A2 (en) 2005-05-23 2006-05-22 Deposition of tensile and compressive stressed materials

Country Status (2)

Country Link
US (1) US7247582B2 (en)
WO (1) WO2006127894A2 (en)

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US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
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US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
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JP6810578B2 (en) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス Dopant introduction method and heat treatment method
CN113936997A (en) * 2017-06-08 2022-01-14 应用材料公司 High density low temperature carbon films for hardmask and other patterning applications
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Also Published As

Publication number Publication date
WO2006127894A2 (en) 2006-11-30
US7247582B2 (en) 2007-07-24
US20060264063A1 (en) 2006-11-23

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